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1. 发明专利

JP2012199226A Plasma generating apparatus, plasma processing apparatus, and plasma processing method 有权
标题翻译：等离子体生成装置，等离子体处理装置和等离子体处理方法
公开(公告)号：JP2012199226A
公开(公告)日：2012-10-18
申请号：JP2012028187
申请日：2012-02-13
申请人： Nagoya Univ , Tokyo Electron Ltd , 国立大学法人名古屋大学 , 東京エレクトロン株式会社
发明人： TOYODA HIROTAKA , HORI MASARU , SEKINE MAKOTO , TAKEDA KEIGO , MIYOSHI SHUSUKE , ITO HITOSHI , KUBOTA YUSUKE
IPC分类号： H05H1/24 , H01L21/3065 , H05H1/46
CPC分类号： H05H1/46 , H05H2001/4622 , H05H2001/463
摘要： PROBLEM TO BE SOLVED: To provide an atmospheric-pressure plasma generating apparatus in which uniform line plasma is generated using a long waveguide and uniform processing can be performed to a workpiece.SOLUTION: A plasma generating apparatus 20 includes: a microwave generating apparatus 21 generating microwaves; a rectangular waveguide 22 connected to the microwave generating apparatus 21 and provided with an antenna section 40 as a part of the rectangular waveguide; a gas supply apparatus 23 connected to the rectangular waveguide 22 and supplying processing gas to an inside of the rectangular waveguide; an exhaust apparatus 24 for exhausting the gas in the antenna section 40 and, if necessary, exhausting an inside of a processing container 10; and a phase shift apparatus 25A changing the phase of a standing wave in the rectangular waveguide 22. The antenna section 40 has a slot hole 41, and the processing gas having been supplied to the inside of the rectangular waveguide 22 in an atmospheric pressure state is transformed into plasma using microwaves and is discharged through the slot hole 41 toward an external workpiece.
摘要翻译：要解决的问题：提供一种使用长波导产生均匀的线等离子体并且可以对工件进行均匀处理的大气压等离子体产生装置。解决方案：等离子体产生装置20包括：产生微波的微波产生装置21; 连接到微波发生装置21的矩形波导22，并且设置有作为矩形波导的一部分的天线部分40; 连接到矩形波导22并将处理气体提供给矩形波导的内部的气体供应装置23; 用于排出天线部40中的气体的排气装置24，如果需要，排出处理容器10的内部; 以及改变矩形波导22中的驻波相位的相移装置25A。天线部40具有槽孔41，并且在大气压状态下被供给到矩形波导管22的内部的处理气体为使用微波转化成等离子体，并通过槽孔41朝向外部工件排出。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013178917A Method for forming conductive film 审中-公开
标题翻译：形成导电膜的方法
公开(公告)号：JP2013178917A
公开(公告)日：2013-09-09
申请号：JP2012041556
申请日：2012-02-28
申请人： Nagoya Univ , 国立大学法人名古屋大学 , Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HORI MASARU , TOYODA HIROTAKA , SEKINE MAKOTO , TAKEDA KEIGO , KONDO HIROKI , ISHIKAWA KENJI , KUBOTA YUSUKE , ITO HITOSHI , MIYOSHI SHUSUKE
IPC分类号： H01B13/00 , B01J19/08 , H05H1/24 , H05K3/12
CPC分类号： H01B13/0026 , B01J19/088 , B01J19/126 , C23C18/08 , C23C18/14 , C23C24/00 , C23C26/00 , H01B13/003 , H01J37/3222 , H01J37/32229 , H01J37/32266 , H01J37/32522 , H01J2237/327 , H01J2237/336 , H05H1/46 , H05H2001/4622 , H05H2001/463 , H05K1/092 , H05K3/105 , H05K2203/095
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a conductive film with sufficient quality from metal fine particles or a metal compound in short time by a simple technique.SOLUTION: In a plasma processor 100, an electromagnetic field is formed in a rectangular waveguide 22 by microwaves introduced from a microwave generator 21 to the rectangular waveguide 22, processing gas containing hydrogen gas supplied to the inside of the rectangular waveguide 22 is made into plasma by a slot hole 41 of an antenna part 40. Plasma with high hydrogen radical density is radiated from the inside of the antenna part 40 of the rectangular waveguide 22 with relatively high pressure toward an external base material S via a slot hole 41 to decompose and remove an organic compound of a precursor containing film formed on the base material S and aggregate metal fine particles or reduce metal ions derived from a metal compound to thereby form a conductive film.
摘要翻译：要解决的问题：提供一种通过简单的技术在短时间内从金属微粒或金属化合物形成具有足够质量的导电膜的方法。解决方案：在等离子体处理器100中，电磁场形成在矩形波导通过从微波发生器21向矩形波导管22引入的微波22，通过天线部40的槽孔41将供给到矩形波导管22的内部的氢气的处理气体制成等离子体。具有高氢自由基密度的等离子体从矩形波导管22的天线部分40的内侧以较高的压力经由狭缝孔41向外部基材S辐射，以分解和除去在基材S上形成的含前体的膜的有机化合物和聚集体金属微粒或还原金属化合物的金属离子，形成导电膜。

3. 发明专利

JP2014175051A Microwave waveguide device, plasma processing device, and plasma processing method 有权
标题翻译：微波波长装置，等离子体处理装置和等离子体处理方法
公开(公告)号：JP2014175051A
公开(公告)日：2014-09-22
申请号：JP2013043404
申请日：2013-03-05
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： ITO HITOSHI , KUBOTA YUSUKE , TOYODA HIROTAKA , HORI MASARU
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H01J37/32229 , H01J37/32211
摘要： PROBLEM TO BE SOLVED: To provide a microwave waveguide device, a plasma processing device, and a plasma processing method, with which plasma is generated with stability.SOLUTION: A microwave waveguide device includes: a waveguide 21 that propagates a microwave, which is received from an input end 2A, from a first end 21a to a second end 21b; a circulator 22 that includes a first port 22a, a second port 22b coupled with the first end 21a, and a third port 22c coupled with the second end 21b and is constructed to receive the microwave from the input end 2A at the first port 22a, couples the microwave from the second port 22b to the first end 21a, receives the microwave from the second end 21b at the third port 22c, and returns the microwave to an input end 2A side; and an EH tuner 18 that is interposed between the input end 21a and the circulator 22 and reflects a part of the microwave, which is received at the third port 22c of the circulator 22 and is returned to the input end 2A side, to the first port 22a of the circulator 22, wherein a slot hole 28 is formed in the waveguide 21.
摘要翻译：要解决的问题：提供一种稳定地产生等离子体的微波波导装置，等离子体处理装置和等离子体处理方法。微波波导装置包括：传播微波的波导21，其被接收从输入端2A，从第一端21a到第二端21b; 包括第一端口22a，与第一端部21a耦合的第二端口22b和与第二端部21b耦合的第三端口22c的循环器22构造成从第一端口22a处的输入端2A接收微波，将微波从第二端口22b耦合到第一端21a，在第三端口22c处从第二端21b接收微波，并将微波返回到输入端2A侧; 以及插入在输入端21a和循环器22之间的EH调谐器18，并且将在循环器22的第三端口22c处接收并返回到输入端2A侧的微波的一部分反射到第一环形器22的端口22a，其中在波导21中形成有槽孔28。

4. 发明专利

JP2012064444A Plasma generation device, plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体生成装置，等离子体处理装置和等离子体处理方法
公开(公告)号：JP2012064444A
公开(公告)日：2012-03-29
申请号：JP2010207774
申请日：2010-09-16
申请人： Nagoya Univ , Tokyo Electron Ltd , 国立大学法人名古屋大学 , 東京エレクトロン株式会社
发明人： HORI MASARU , TOYODA HIROTAKA , SEKINE MAKOTO , ITO HITOSHI , MIYOSHI SHUSUKE
IPC分类号： H05H1/24 , B08B7/00 , H01L21/304
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32229 , H01J37/3244 , H05H2001/4622
摘要： PROBLEM TO BE SOLVED: To provide a plasma generation device which can reduce microwave loss as much as possible and efficiently generate high-density plasma.SOLUTION: A plasma generation device 100 comprises: a microwave generation unit 21 for generating a microwave; a hollow rectangular waveguide 22 which is connected to the microwave generation unit 21, lengthens in the transmission direction of the microwave and has a rectangular cross section in a direction orthogonal to the transmission direction; a gas supply unit 23 which is connected to the rectangular waveguide 22 for supplying a processing gas thereinto; and an antenna part 40 which forms a part of the rectangular waveguide 22 for emitting plasma generated therein to the outside. The antenna part 40 has one or more slot holes 41 in a wall 40a whose cross section makes a short side, and converts the processing gas supplied into the rectangular waveguide 22 placed in an atmospheric pressure state to plasma by the microwave to emit the converted plasma from the slot holes 41 toward a processed object on the outside.
摘要翻译：解决的问题：提供尽可能地减少微波损耗并有效地产生高密度等离子体的等离子体产生装置。解决方案：等离子体产生装置100包括：微波产生单元21，用于产生微波; 连接到微波产生单元21的中空矩形波导22在微波的传输方向上延长并且在与传输方向正交的方向上具有矩形横截面; 气体供给单元23，其连接到矩形波导管22，用于向其提供处理气体; 以及形成矩形波导22的一部分以将其中产生的等离子体发射到外部的天线部分40。天线部40在壁40a中具有一个或多个狭缝孔41，其横截面为短边，并且通过微波将供给到处于大气压状态的矩形波导管22中的处理气体转换为等离子体，以发射转换的等离子体从槽孔41朝向外部的加工对象。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012136754A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2012136754A
公开(公告)日：2012-07-19
申请号：JP2010291142
申请日：2010-12-27
申请人： Chube Univ , Nagoya Univ , Tokai Rubber Ind Ltd , 国立大学法人名古屋大学 , 学校法人中部大学 , 東海ゴム工業株式会社
发明人： FUJII RIKA , SASAI TATENORI , SUGAI HIDEO , TOYODA HIROTAKA , ISHIJIMA TATSUO
IPC分类号： C23C16/511 , C23C14/06 , C23C14/48 , C23C16/26 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which continuously forms a barrier film to a workpiece.SOLUTION: The plasma processing apparatus 1 disposed at both sides of a workpiece H includes: slot antennas 31L, 31R having a slot 310R through which a micro wave passes toward a workpiece H; dielectric materials 32L, 32R which cover surfaces of sides of the workpiece H of the slot antennas 31L, 31R; a chamber 38 which partitions in an inside thereof a plasma generation chamber 384 disposed between the dielectric materials 32L, 32R, making a plasma producing gas ionize by an electric field of the micro wave at a negative pressure state to produce charged particles PL, PR; meshes 33L, 33R disposed in the plasma generation chamber 384, disposed between surfaces HL, HR to be processed of the workpiece H and the dielectric materials 32L, 32R, and insulated together; a power source 37 applying high-frequency voltages having opposite phases together to the meshes 33L, 33R; and a matching box 36 adjusting an impedance between the power source 37 and the meshes 33L, 33R.
摘要翻译：要解决的问题：提供一种对工件连续形成阻挡膜的等离子体处理装置。解决方案：设置在工件H的两侧的等离子体处理装置1包括：槽天线31L，31R，其具有微波通过工件H的槽310R; 覆盖缝隙天线31L，31R的工件H的侧面的绝缘材料32L，32R; 在室内38分隔设置在电介质材料32L，32R之间的等离子体产生室384，使等离子体产生气体通过微波的电场以负压状态离子化，产生带电粒子PL，PR; 设置在等离子体产生室384中的网格33L，33R，设置在被加工物H的表面HL，HR和介质材料32L，32R之间，并且绝缘在一起; 将具有相反相位的高频电压施加到网孔33L，33R的电源37; 以及调整电源37与网格33L，33R之间的阻抗的匹配箱36。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2010061860A Plasma generation device 审中-公开
标题翻译：等离子体生成装置
公开(公告)号：JP2010061860A
公开(公告)日：2010-03-18
申请号：JP2008223816
申请日：2008-09-01
申请人： Chube Univ , Nagoya Univ , Tokai Rubber Ind Ltd , 国立大学法人名古屋大学 , 学校法人中部大学 , 東海ゴム工業株式会社
发明人： SUGAI HIDEO , ISHIJIMA TATSUO , TOYODA HIROTAKA , SASAI TATENORI
IPC分类号： H05H1/46 , H05H1/24
摘要： PROBLEM TO BE SOLVED: To provide a plasma generation device having a wide plasma generation space and being capable of performing plasma treatment continuously and uniformly, as well. SOLUTION: Microwave plasma generation means R constituted of dielectric plates 2, and plate-shape slot antennas 4 arranged on one surface of the dielectric plate 2; microwave waveguide 5 are arranged on an outer side of the slot antenna 4 such that the dielectric plates 2 face one another; and the periphery of a space between the facing pair of the microwave plasma generation means are surrounded by wall bodies 12, 14 and the space formed by the pair of the microwave generation means R and the wall bodies 12, 14 serves as a plasma generation space. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供具有宽等离子体产生空间并能够连续均匀地进行等离子体处理的等离子体产生装置。解决方案：由电介质板2构成的微波等离子体产生装置R和布置在电介质板2的一个表面上的板状槽天线4; 微波波导5布置在缝隙天线4的外侧，使得电介质板2彼此面对; 并且微波等离子体产生装置的面对对之间的空间的周围被壁体12,14包围，并且由一对微波产生装置R和壁体12,14形成的空间用作等离子体产生空间。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2013108115A Apparatus of generating ecr plasma, and apparatus of depositing film by way of magnetron sputtering employing the same 有权
标题翻译：生产ECR等离子体的装置，以及使用其的MAGNETRON溅射方法沉积膜的装置
公开(公告)号：JP2013108115A
公开(公告)日：2013-06-06
申请号：JP2011252383
申请日：2011-11-18
申请人： Tokai Rubber Ind Ltd , 東海ゴム工業株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： SASAI TATENORI , TOYODA HIROTAKA
IPC分类号： C23C14/35 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide an apparatus of generating ECR plasma, capable of generating plasma of high density under a low pressure, and an apparatus of depositing a film by way of magnetron sputtering, capable of depositing a thin film of slight surface unevenness.SOLUTION: The apparatus 4 of generating ECR plasma includes a rectangular wave guide 41 that transmits a microwave, a slot antenna 42 comprising a slot for the microwave to pass therethrough, a dielectric member 43 disposed to cover the slot, with its surface on the side of plasma generating area disposed parallel to the incidence direction of the microwave incident from the slot, a support panel 44 disposed on the back of the dielectric member 43, and a permanent magnet 45 disposed on the back of the support panel 44, thereby generating ECR plasma P1. The apparatus 1 of depositing a film by way of magnetic sputtering includes the apparatus 4 of generating ECR plasma, and forms a film by virtue of magnetron plasma P2 while radiating ECR plasma P1 onto a space between a substrate 20 and a target 30.
摘要翻译：解决的问题：提供一种能够在低压下产生高密度等离子体的ECR等离子体的设备，以及通过磁控溅射沉积膜的装置，能够沉积轻微的薄膜表面不均匀。解决方案：产生ECR等离子体的装置4包括传输微波的矩形波导41，包括用于微波通过的槽的缝隙天线42，设置成覆盖槽的电介质构件43，其表面在与从狭槽入射的微波的入射方向平行设置的等离子体产生区域侧，设置在电介质构件43的背面的支撑面板44和设置在支撑面板44背面的永磁体45，从而产生ECR等离子体P1。通过磁溅射沉积膜的装置1包括产生ECR等离子体的装置4，并且通过磁控管等离子体P2形成膜，同时将ECR等离子体P1放射到衬底20和靶30之间的空间上。
版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2010129327A Microwave plasma processing device 有权
标题翻译：微波等离子体处理装置
公开(公告)号：JP2010129327A
公开(公告)日：2010-06-10
申请号：JP2008301841
申请日：2008-11-27
申请人： Nagoya Univ , Tokai Rubber Ind Ltd , 国立大学法人名古屋大学 , 東海ゴム工業株式会社
发明人： SASAI TATENORI , TOYODA HIROTAKA , ISHIJIMA TATSUO
IPC分类号： H05H1/24 , C08J7/00
摘要： PROBLEM TO BE SOLVED: To provide a microwave plasma processing device which easily applies a prescribed treatment on the outer circumference of a processing object. SOLUTION: The microwave plasma processing device 1 is provided with: a tubular inner circumference wall part 30 having a slit 300; a tubular outer circumference wall part 31 arranged at the outside in axial direction of the inner circumference wall part 30; a wave-guiding passage 33 demarcated between the inner circumference wall part 30 and the outer circumference wall part 31; an irradiation part 34 which is demarcated inside in axial direction of the inner circumference wall part 30, is communicated with the wave-guiding passage 33 through the slit 300, and in which the outer circumference face 800 of the processing object 80 is arranged; and a gas supply tube 35 which supplies a plasma generating gas to the slit 300. In a nearly atmospheric pressure condition, microwave and the plasma generating gas are made to pass through the slit 300 and a high electric field is formed in the vicinity of the slit 300 to generate plasma in the irradiation part 34, and thereby a prescribed treatment is applied on the outer circumference face 800 by the plasma. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在加工对象的外周易于施加规定处理的微波等离子体处理装置。微波等离子体处理装置1设置有：具有狭缝300的管状内周壁部30; 设置在内周壁部30的轴向外侧的管状外周壁部31; 在内周壁部30和外周壁部31之间划分的波导路33; 在内周壁部30的轴向内侧划分的照射部34通过狭缝300与波导路33连通，配置有加工对象物80的外周面800。以及向狭缝300供给等离子体产生气体的气体供给管35.在几乎大气压条件下，使微波和等离子体产生气体通过狭缝300，并且在等离子体发生气体附近形成高电场狭缝300在照射部34中产生等离子体，由此通过等离子体对外周面800进行规定的处理。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2014145118A Sputter film deposition apparatus 审中-公开
标题翻译：溅射膜沉积装置
公开(公告)号：JP2014145118A
公开(公告)日：2014-08-14
申请号：JP2013015453
申请日：2013-01-30
申请人： Tokai Rubber Ind Ltd , 東海ゴム工業株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： SASAI TATENORI , TOYODA HIROTAKA
IPC分类号： C23C14/34 , C23C14/40
CPC分类号： C23C14/3471 , H01J37/32192 , H01J37/34 , H01J37/3426
摘要： PROBLEM TO BE SOLVED: To provide a sputter film deposition apparatus which uses dielectric material as a target and can form a thin film having uniform thickness over a substrate at high speed.SOLUTION: A sputter film deposition apparatus 1 includes: a dielectric part 30 as a target; a rectangular wave guide 51 which has a slot antenna 510 with a slot 511 formed, through which the microwave passes; a microwave plasma generation mechanism 5 which generates plasma on a surface 300 of the dielectric part 30 by the microwave passing through the slot 511 which is covered with the dielectric part 30; a high frequency plasma generation mechanism 4 which is disposed on a rear surface at the back of the surface 300 of the dielectric part 30, and generates plasma with a high frequency wave; and a substrate 20 disposed opposite to the surface 300 of the dielectric part 30. The sputter film deposition apparatus 1 forms a thin film on a surface of the substrate 20 by depositing sputter particles emitted from the dielectric part 30.
摘要翻译：要解决的问题：提供一种使用电介质材料作为靶材并能够高速地在基板上形成厚度均匀的薄膜的溅射膜沉积设备。解决方案：溅射膜沉积设备1包括：介电部分30，如一个目标矩形波导51具有形成有槽511的槽天线510，微波通过该矩形波导51。微波等离子体产生机构5，其通过微波通过介电部件30覆盖的槽511在介电部件30的表面300上产生等离子体; 高频等离子体产生机构4，其设置在电介质部30的表面300的背面的后表面，并产生高频等离子体; 以及与电介质部件30的表面300相对设置的基板20.溅射膜沉积设备1通过沉积从电介质部分30发射的溅射颗粒在基板20的表面上形成薄膜。

10. 发明专利

JP2012219968A Resin hose and method for manufacturing the same 审中-公开
标题翻译：树脂软管及其制造方法
公开(公告)号：JP2012219968A
公开(公告)日：2012-11-12
申请号：JP2011088945
申请日：2011-04-13
申请人： Tokai Rubber Ind Ltd , Nagoya Univ , 国立大学法人名古屋大学 , 東海ゴム工業株式会社
发明人： SASAI TATENORI , TOYODA HIROTAKA
IPC分类号： F16L11/12 , B29C47/02 , B29K77/00 , B29L22/00 , B29L23/00 , B32B1/08 , B32B9/00 , B32B27/34 , C23C16/42 , C23C16/511
摘要： PROBLEM TO BE SOLVED: To provide a resin hose through which a refrigerant or a hydrogen fuel is less likely to pass, and to provide a method for manufacturing the resin hose.SOLUTION: A resin hose 8 includes: a cylindrical inner layer 80 comprised of a polyamide resin; a cylindrical outer layer 82 which is laminated outside of the inner layer 80 in a radial direction and comprised of a polyamide resin; and an intermediate layer 81 which is laminated between the inner layer 80 and the outer layer 82 and comprised of SiN. A method for manufacturing the resin hose includes: an intermediate layer forming step of forming the intermediate layer 81 on an outer circumferential surface 800 of the inner layer 80 by performing microwave plasma treatment on the outer circumferential surface 800 using monosilane and nitrogen as reaction gas; and an outer layer forming step of forming the outer layer 82 by performing fusing and extrusion molding on the polyamide resin on an outer circumferential surface of the intermediate layer 81.
摘要翻译：要解决的问题：提供制冷剂或氢燃料不太可能通过的树脂软管，并提供制造树脂软管的方法。解决方案：树脂软管8包括：由聚酰胺树脂组成的圆柱形内层80; 圆柱形外层82，其沿径向层叠在内层80的外侧，并由聚酰胺树脂构成; 以及层叠在内层80和外层82之间并由SiN构成的中间层81。树脂软管的制造方法包括：通过使用甲硅烷和氮作为反应气体对外周面800进行微波等离子体处理，在内层80的外周面800上形成中间层81的中间层形成工序; 以及通过在中间层81的外周面上对聚酰胺树脂进行熔融挤出成型而形成外层82的外层形成工序。（C）2013，JPO＆INPIT

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