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    • 2. 发明专利
    • Laser-annealing apparatus, and manufacturing method of thin-film transistor
    • 激光退火装置及薄膜晶体管的制造方法
    • JP2003045799A
    • 2003-02-14
    • JP2001229885
    • 2001-07-30
    • Toshiba Corp株式会社東芝
    • MIHASHI HIROSHINAKAMURA ATSUSHI
    • H01L21/20H01L21/268H01L21/336H01L29/786H01S3/00
    • PROBLEM TO BE SOLVED: To provide a laser-annealing apparatus, that can manufacture a thin- film transistor where mobility is high over the entire substrate, and at the same time, the characteristics are uniform, and to provide a manufacturing method of the thin-film transistor using the laser annealing apparatus.
      SOLUTION: When on an amorphous silicon thin film is irradiated with a laser beam pulse on a glass substrate for forming polycrystalline silicon thin film, a laser beam where a strength distribution in a direction in parallel with the advance direction (short axis) of the glass substrate of nearly a trapezoidal form is used, the width of the steepness of a beam profile being sampled from the beam profile of a plurality of continuous pulses, or the coefficients in a linear regression straight line in a plateau region are measured and controlled, thus determining failure in laser beams.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:提供一种激光退火装置,其可以在整个基板上制造移动性高的薄膜晶体管,同时特性是均匀的,并且提供薄的薄膜晶体管的制造方法 - 使用激光退火装置的薄膜晶体管。 解决方案:当在用于形成多晶硅薄膜的玻璃基板上用激光束脉冲照射非晶硅薄膜时,在与玻璃的前进方向(短轴)平行的方向上的强度分布的激光束 使用几乎为梯形的衬底,测量并控制从多个连续脉冲的光束轮廓采样的光束轮廓的陡度的宽度或平台区域中的线性回归直线中的系数,因此 确定激光束的故障。
    • 6. 发明专利
    • Manufacture of crystalline silicon film
    • 晶体硅膜的制造
    • JPH11274078A
    • 1999-10-08
    • JP7925698
    • 1998-03-26
    • Toshiba Corp株式会社東芝
    • NAKAMURA ATSUSHITERADA SHIGEKIKAWAHISA YASUTOMIHASHI HIROSHI
    • H01L21/20
    • PROBLEM TO BE SOLVED: To provide a polysilicon film manufacturing method, which permits evaluation of the crystallinity of polycrystalline silicon with a simple scheme and through which a polysilicon film with less manufacturing variations and a high yield is obtained.
      SOLUTION: This polysilicon manufacturing method uses the JISZ8741 specular gloss measuring method. When the crystal grain size is maximum and granules are not produced, since the electric conductivity becomes high and the glossiness of the surface of a thin film annealed with an excimer laser is minimized, non-destructive evaluation of the crystal grain size is made by measuring the glossiness of polysilicon 2 in the step of forming the polysilicon film 2, the optimal conditions for crystallization are set, early elimination of defective is made possible, and the optimal conditions of the energy density are set.
      COPYRIGHT: (C)1999,JPO
    • 要解决的问题:提供一种多晶硅膜制造方法,其能够以简单的方案评估多晶硅的结晶度,并且通过该方法获得具有较小制造变化和高产率的多晶硅膜。 解决方案:该多晶硅制造方法采用JISZ8741镜面光泽测量方法。 当晶粒尺寸最大并且不产生颗粒时,由于电导率变高,并且用准分子激光器退火的薄膜的表面的光泽度最小化,因此通过测量晶体尺寸的无损评估 在形成多晶硅膜2的步骤中,多晶硅2的光泽度,结晶的最佳条件被设定,可以及早消除缺陷,并且设定能量密度的最佳条件。
    • 7. 发明专利
    • Information reproducing device, and information reproducing method
    • 信息再现设备和信息再现方法
    • JP2010239436A
    • 2010-10-21
    • JP2009085885
    • 2009-03-31
    • Toshiba Corp株式会社東芝
    • NAKAMURA ATSUSHI
    • H04L9/08G06F21/62H04L9/32H04N5/91H04N5/93H04N7/167H04N7/173H04N21/418H04N21/4405H04N21/4623
    • PROBLEM TO BE SOLVED: To provide an information reproducing device and an information reproducing method that can shorten a time until the reproduction of content as much as possible after the reproduction of encrypted content recorded in an information recording medium is required and observe right information to the reproduction of content and is suitable for practical use. SOLUTION: The information reproducing device includes: a means (14) to acquire encrypted content, a content key for decrypting the encrypted content and right information indicating the reproduction condition of the decrypted content; means (15-18) to determine the possibility of reproduction of the content according to the acquired right information, perform updating of the right information when the reproduction is possible, and decrypt the encrypted content by the acquired content key and apply decoding to the decrypted contents in parallel; and a means (19) to reproduce the decoded content in such a condition that the updating of the right information is completed. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种信息再现装置和信息再现方法,其可以在需要在记录在信息记录介质中的加密内容的再现之后尽可能地缩短在内容的再现之前的时间,并且观察权利 信息再现内容,适合实际使用。 解决方案:信息再现装置包括:获取加密内容的装置(14),用于解密加密内容的内容密钥和指示解密内容的再现条件的右侧信息; 用于根据所获取的权利信息确定内容再现的可能性的装置(15-18),当可以进行再现时执行更新权利信息,并且通过获取的内容密钥对加密的内容进行解密,并对解密的 内容并行; 以及在完成正确信息的更新的条件下再现解码内容的装置(19)。 版权所有(C)2011,JPO&INPIT
    • 9. 发明专利
    • Method for laser annealing and laser-annealing condition deciding apparatus
    • 激光退火方法和激光退火条件决定装置
    • JP2003059830A
    • 2003-02-28
    • JP2001248094
    • 2001-08-17
    • Toshiba Corp株式会社東芝
    • MIHASHI HIROSHINAKAMURA ATSUSHI
    • G02F1/1368B23K26/03H01L21/20H01L21/268H01L21/324H01L21/336H01L21/66H01L21/77H01L27/12H01L29/786
    • B23K26/032H01L21/2026H01L22/26H01L27/1285H01L29/66757H01L29/78675
    • PROBLEM TO BE SOLVED: To provide a method for laser annealing, capable of obtaining a TFT having a high mobility on an overall surface of a substrate with a high yield, and to provide a laser-annealing condition deciding apparatus therefor. SOLUTION: An amorphous silicon film sample with a condition deciding laser beam under various energy density conditions to be subjected to irradiation by the laser-annealing condition deciding apparatus in advance prior to laser annealing, forms a plurality of polycrystalline silicon film samples having various grain sizes, introducing a light having a wavelength of a visible region as a center, to the polycrystalline silicon at a predetermined incident angle with respect to a perpendicular made erect on a flat surface of the silicon, detects its scattered light or the reflected light at an angle, except in the regularly reflecting direction of the incident light, thereby measures surface scattering degrees of the plurality of the samples, and obtains energy density conditions which correspond to the sample of the highest scattering strength.
    • 要解决的问题:提供一种激光退火方法,能够以高产率获得在基板的整个表面上具有高迁移率的TFT,并提供其激光退火条件决定装置。 解决方案:在激光退火之前预先在激光退火条件决定装置照射的各种能量密度条件下决定激光束的条件的非晶硅膜样品形成多个具有各种晶粒尺寸的多晶硅膜样品 将具有可见光区域的波长的光以相对于在硅的平坦表面上直立的垂直方向的预定入射角度的多晶硅引入,以一定角度检测其散射光或反射光 除了入射光的规则反射方向以外,由此测定多个样品的表面散射度,得到与散射强度最高的样品对应的能量密度条件。