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1. 发明专利

JP2003059830A Method for laser annealing and laser-annealing condition deciding apparatus 有权
标题翻译：激光退火方法和激光退火条件决定装置
公开(公告)号：JP2003059830A
公开(公告)日：2003-02-28
申请号：JP2001248094
申请日：2001-08-17
申请人： Toshiba Corp , 株式会社東芝
发明人： MIHASHI HIROSHI , NAKAMURA ATSUSHI
IPC分类号： G02F1/1368 , B23K26/03 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/66 , H01L21/77 , H01L27/12 , H01L29/786
CPC分类号： B23K26/032 , H01L21/2026 , H01L22/26 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： PROBLEM TO BE SOLVED: To provide a method for laser annealing, capable of obtaining a TFT having a high mobility on an overall surface of a substrate with a high yield, and to provide a laser-annealing condition deciding apparatus therefor. SOLUTION: An amorphous silicon film sample with a condition deciding laser beam under various energy density conditions to be subjected to irradiation by the laser-annealing condition deciding apparatus in advance prior to laser annealing, forms a plurality of polycrystalline silicon film samples having various grain sizes, introducing a light having a wavelength of a visible region as a center, to the polycrystalline silicon at a predetermined incident angle with respect to a perpendicular made erect on a flat surface of the silicon, detects its scattered light or the reflected light at an angle, except in the regularly reflecting direction of the incident light, thereby measures surface scattering degrees of the plurality of the samples, and obtains energy density conditions which correspond to the sample of the highest scattering strength.
摘要翻译：要解决的问题：提供一种激光退火方法，能够以高产率获得在基板的整个表面上具有高迁移率的TFT，并提供其激光退火条件决定装置。解决方案：在激光退火之前预先在激光退火条件决定装置照射的各种能量密度条件下决定激光束的条件的非晶硅膜样品形成多个具有各种晶粒尺寸的多晶硅膜样品将具有可见光区域的波长的光以相对于在硅的平坦表面上直立的垂直方向的预定入射角度的多晶硅引入，以一定角度检测其散射光或反射光除了入射光的规则反射方向以外，由此测定多个样品的表面散射度，得到与散射强度最高的样品对应的能量密度条件。

2. 发明专利

JPH11274078A Manufacture of crystalline silicon film 失效
标题翻译：晶体硅膜的制造
公开(公告)号：JPH11274078A
公开(公告)日：1999-10-08
申请号：JP7925698
申请日：1998-03-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAMURA ATSUSHI , TERADA SHIGEKI , KAWAHISA YASUTO , MIHASHI HIROSHI
IPC分类号： H01L21/20
摘要： PROBLEM TO BE SOLVED: To provide a polysilicon film manufacturing method, which permits evaluation of the crystallinity of polycrystalline silicon with a simple scheme and through which a polysilicon film with less manufacturing variations and a high yield is obtained.
SOLUTION: This polysilicon manufacturing method uses the JISZ8741 specular gloss measuring method. When the crystal grain size is maximum and granules are not produced, since the electric conductivity becomes high and the glossiness of the surface of a thin film annealed with an excimer laser is minimized, non-destructive evaluation of the crystal grain size is made by measuring the glossiness of polysilicon 2 in the step of forming the polysilicon film 2, the optimal conditions for crystallization are set, early elimination of defective is made possible, and the optimal conditions of the energy density are set.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：提供一种多晶硅膜制造方法，其能够以简单的方案评估多晶硅的结晶度，并且通过该方法获得具有较小制造变化和高产率的多晶硅膜。解决方案：该多晶硅制造方法采用JISZ8741镜面光泽测量方法。当晶粒尺寸最大并且不产生颗粒时，由于电导率变高，并且用准分子激光器退火的薄膜的表面的光泽度最小化，因此通过测量晶体尺寸的无损评估在形成多晶硅膜2的步骤中，多晶硅2的光泽度，结晶的最佳条件被设定，可以及早消除缺陷，并且设定能量密度的最佳条件。

3. 发明专利

JP2003045799A Laser-annealing apparatus, and manufacturing method of thin-film transistor 审中-公开
标题翻译：激光退火装置及薄膜晶体管的制造方法
公开(公告)号：JP2003045799A
公开(公告)日：2003-02-14
申请号：JP2001229885
申请日：2001-07-30
申请人： Toshiba Corp , 株式会社東芝
发明人： MIHASHI HIROSHI , NAKAMURA ATSUSHI
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01S3/00
摘要： PROBLEM TO BE SOLVED: To provide a laser-annealing apparatus, that can manufacture a thin- film transistor where mobility is high over the entire substrate, and at the same time, the characteristics are uniform, and to provide a manufacturing method of the thin-film transistor using the laser annealing apparatus.
SOLUTION: When on an amorphous silicon thin film is irradiated with a laser beam pulse on a glass substrate for forming polycrystalline silicon thin film, a laser beam where a strength distribution in a direction in parallel with the advance direction (short axis) of the glass substrate of nearly a trapezoidal form is used, the width of the steepness of a beam profile being sampled from the beam profile of a plurality of continuous pulses, or the coefficients in a linear regression straight line in a plateau region are measured and controlled, thus determining failure in laser beams.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种激光退火装置，其可以在整个基板上制造移动性高的薄膜晶体管，同时特性是均匀的，并且提供薄的薄膜晶体管的制造方法 - 使用激光退火装置的薄膜晶体管。解决方案：当在用于形成多晶硅薄膜的玻璃基板上用激光束脉冲照射非晶硅薄膜时，在与玻璃的前进方向（短轴）平行的方向上的强度分布的激光束使用几乎为梯形的衬底，测量并控制从多个连续脉冲的光束轮廓采样的光束轮廓的陡度的宽度或平台区域中的线性回归直线中的系数，因此确定激光束的故障。

4. 发明专利

JP2000077759A Laser device and manufacture of polycrystalline silicon 审中-公开
标题翻译：激光器件和多晶硅的制造
公开(公告)号：JP2000077759A
公开(公告)日：2000-03-14
申请号：JP24147698
申请日：1998-08-27
申请人： Toshiba Corp , 株式会社東芝
发明人： MIHASHI HIROSHI , KAWAHISA YASUTO , MATSUURA YUKI , FUJIMURA TAKASHI
IPC分类号： H01L21/268 , H01L21/336 , H01L29/786 , H01S3/00 , H01S3/104
摘要： PROBLEM TO BE SOLVED: To manufacture a p-Si(polycrystalline silicon) TFT uniform in drive characteristics or a liquid crystal display device of high display quality keeping its manufacturing yield high by a method wherein a-Si(amorphous silicon) is homogenized by uniform annealing independently of variations in detection results obtained from a beam detection means in an excimer laser annealing device where a-Si turned to p-Si annealing.
SOLUTION: A charging voltage of a high-voltage power supply 54 is set and controlled so as to make the oscillation energy of an excimer laser equal to a set value monitoring an excimer laser beam 36 under the condition where an external shutter 46 is kept closed. After the oscillation energy of the excimer laser is set, the high-voltage power supply 54 is controlled so as to keep its set charging voltage constant independently of variations in detection results obtained from a photodiode 52, whereby an a-Si film 57 is annealed with the set uniform energy, and thus a p-Si film 58 that is uniformly crystallized can be obtained.
COPYRIGHT: (C)2000,JPO
摘要翻译：要解决的问题：为了制造驱动特性均匀的p-Si（多晶硅）TFT或具有高显示质量的液晶显示装置，通过其中a-Si（非晶硅）均匀化均匀的方法保持其制造产量高独立于在将a-Si转变为p-Si退火的准分子激光退火装置中的束检测装置获得的检测结果的变化。解决方案：设置和控制高压电源54的充电电压，以使得准分子激光器的振荡能量等于在外部开闭器46保持关闭的状态下监视准分子激光束36的设定值。在准分子激光器的振荡能量被设定之后，控制高电压电源54，使其设定的充电电压保持恒定，而与光电二极管52获得的检测结果的变化无关，从而使a-Si膜57退火具有均匀的均匀能量，因此可以获得均匀结晶的p-Si膜58。

5. 发明专利

JP2002158186A METHOD AND APPARATUS FOR LASER ANNEALING 失效
公开(公告)号：JP2002158186A
公开(公告)日：2002-05-31
申请号：JP2000354648
申请日：2000-11-21
申请人： TOSHIBA CORP
发明人： MIHASHI HIROSHI , NAKAMURA ATSUSHI
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01S3/00
摘要： PROBLEM TO BE SOLVED: To provide a method for laser annealing which can minimize the interruption of operation due to insufficient energy without reducing a manufacturing yield of polysilicon. SOLUTION: When there is a pulse having the intensity lower than a predetermined specified value, the energy density is lowered and the grain diameters of polysilicon formed during laser annealing becomes smaller than a desired size. Out of the sequence of pulses, if there are a predetermined number of such pulses as to have the intensity lower than the specified value, irradiation with an excimer laser beam B is stopped. Thereby, the manufacturing yield of polysilicon formed from amorphous silicon 7 by laser annealing is not reduced and the interruption of operation due to insufficient energy such as missing pulse can be minimized.

6. 发明专利

JP2002158185A METHOD AND APPARATUS FOR LASER ANNEALING, AND METHOD AND APPARATUS FOR MANUFACTURING THIN FILM TRANSISTOR 失效
公开(公告)号：JP2002158185A
公开(公告)日：2002-05-31
申请号：JP2000354647
申请日：2000-11-21
申请人： TOSHIBA CORP
发明人： MIHASHI HIROSHI , NAKAMURA ATSUSHI
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method for leaser annealing which allows the radiation of excimer laser beam at a constant and desired fluence from start to end and which can uniform the grain diameters of polysilicon. SOLUTION: A pulsatory excimer laser beam B is oscillated toward amorphous silicon 7 on a glass substrate 5. The rise and fall of the excimer laser beam B is not necessarily sharp. An optical path along which the excimer laser beam B irradiates the amorphous silicon 7 is cut off between the pulses of the excimer laser beam B. By this method, the excimer laser beam B can irradiate the amorphous silicon 7 at a constant and desired fluence from start to end, and the grain diameters of polysilicon formed by the laser annealing can be uniformed. Furthermore, the uniform performance of a thin film transistor can be achieved by irradiation with the excimer laser beam on the amorphous silicon 7 in the manufacture of the thin film transistor.

7. 发明专利

JP2001338892A LASER ANNEALING APPARATUS AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 失效
公开(公告)号：JP2001338892A
公开(公告)日：2001-12-07
申请号：JP2000156529
申请日：2000-05-26
申请人： TOSHIBA CORP
发明人： MIHASHI HIROSHI , NAKAMURA ATSUSHI , MATSUNAKA SHIGEKI , SUMINO TSUTOMU
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a polycrystal silicon thin film transistor used for a pixel switch or a drive circuit of a liquid crystal display in a mass production at a good yield. SOLUTION: In a laser annealing apparatus 1 for generating a polycrystal silicon by radiating a pulse laser beam to a amorphous silicon, a plurality of peak groups included in the beam radiated to a glass board O are detected by a biplanar phototube 18, an angle of a resonance mirror 11a of a laser unit 11 is changed to an optimum so that (second peak group)/(first peak group) of the beam becomes a range of 0.37 to 0.47 or (area of second peak group)/(area of first peak group) becomes a range of 0.65 to 0.85 under the condition that a fluence dependence becomes gentle based on a result analyzed by an analyzer 20 and thereby a polycrystal silicon of a uniform grain size can be obtained.

8. 发明专利

JPH11102864A MANUFACTURING OF POLYCRYSTALLINE THIN FILM 失效
公开(公告)号：JPH11102864A
公开(公告)日：1999-04-13
申请号：JP26031697
申请日：1997-09-25
申请人： TOSHIBA CORP
发明人： MIHASHI HIROSHI , MATSUURA YUKI , FUJIMURA TAKASHI , IMAI NOBUO , GOTO YASUMASA
IPC分类号： G02F1/136 , C23C16/24 , C23C16/56 , G02F1/1368 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method which can improve field mobility of a polycrystalline silicon thin film used for a pixel switch and a drive circuit of a liquid crystal display, and can improve yield. SOLUTION: Before an a-Si thin film is subjected to laser annealing, different places of an amorphous silicon thin film are each irradiated with one pulse, each changing the energy density of laser variously and an area of each irradiation region is divided into two by a straight line 13 at right angles to an axis in a direction in which a substrate is moved. An average grain diameter of polycrystalline silicon of the two regions is compared respectively, and a region of small average grain diameter and a region of large average grain diameter are obtained. A direction in which a substrate is moved with respect to laser beam is decided, according to the result.

9. 发明专利

JPH11101742A INSPECTION OF POLYCRYSTALLINE SEMICONDUCTOR FILM 失效
公开(公告)号：JPH11101742A
公开(公告)日：1999-04-13
申请号：JP26067297
申请日：1997-09-25
申请人： TOSHIBA CORP
发明人： GOTO YASUMASA , MIHASHI HIROSHI , IMAI NOBUO , FUJIMURA TAKASHI , MATSUURA YUKI
IPC分类号： G01N21/21 , G01N21/41
摘要： PROBLEM TO BE SOLVED: To measure the particle size of a polycrystalline silicon membrane in a non-destructive manner in a non-contact state within a short time. SOLUTION: A standard sample is formed by an energy beam anneal method. A spectral ellipsometer is adapted to the standard sample and the wavelength dependence of a refractive index and a damping coefficient is measured and a particle size and surface unevenness are measured by using an electron microscope to be determined. Subsequently, an evaluation material to be inspected is formed by the same energy beam anneal method and the spectal ellipsometer is used to measure the wavelength dependence of a refractive index and a damping coefficient and the measured results are compared with the results of the standard sample. The determination of optical measured results becomes possible and a mean particle size of polycrystalline silicon is measured in a non-distructive manner in a non-contact state with high accuracy by the short- time measurement of about 5 sec of the evaluate material and mobility is calculated to make it possible to select a good product and a defective with high accuracy. Therefore, the quality control of a membrane transitor and a liquid crystal display device can be performed within a short time with high accuracy and production efficiency can be enhanced.

10. 发明专利

JPH10229202A THIN-FILM TRANSISTOR, LOGIC GATE DEVICE, AND THIN-FILM TRANSISTOR ARRAY 失效
公开(公告)号：JPH10229202A
公开(公告)日：1998-08-25
申请号：JP4843897
申请日：1997-02-17
申请人： TOSHIBA CORP
发明人： ISHIZUKA YOSHIKI , MIHASHI HIROSHI , KAWAHISA YASUTO
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/33 , H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor (array) having high mobility and uniform characteristic. SOLUTION: By paying attention to the anisotropy of the distribution of crystal grain sizes and the arranging positions of source and drain electrodes in a semiconductor film which is composed of non-single-crystal crystalline silicon, a plurality of thin-film transistors are formed by properly arranging the source and the drain electrodes, so that carriers may only move through a region having a large crystal grain size and large mobility. In all thin-film transistors which constitute a prescribed thin-film transistor array, the carriers can move between a source and a drain, without being interrupted by a region having a small crystal grain size and small mobility. Therefore, such a high- performance thin-film transistor array that all thin-film transistors constituting the array have small carrier mobility, and the characteristic variation among the thin-film transistors being extremely small can be obtained.

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