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1. 发明专利

JPS61122187A Apparatus for pulling up single crystal 失效
标题翻译：用于拉出单晶的装置
公开(公告)号：JPS61122187A
公开(公告)日：1986-06-10
申请号：JP24351184
申请日：1984-11-20
申请人： Toshiba Ceramics Co Ltd , Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , TADA YOSHIAKI , OBUCHI NORIYUKI , OISHI TOSHIO , YAMATO MITSUHIRO , HIGUCHI KOKICHI
IPC分类号： C30B15/14 , C30B15/20 , C30B15/22
CPC分类号： C30B15/14 , C30B15/22
摘要： PURPOSE:To enable the control of the diameter of a single crystal, and the pulling up of a single crystal having large diameter, by measuring the temperatures near the growing part of a single crystal and at the surface of the molten liquid apart from the first position by a definite distance, and controlling the heating of the molten liquid according to the tmperature difference. CONSTITUTION:A seed crystal 7 attached to the pulling up shaft 6 is made to contact with the molten liquid 5 in the quartz crucible 2 supported with a graphite crucible 1 surrounded by heaters 3 and placed in a chamber 8 having inert gas atmosphere. The pulling up shaft 6 is pulled up under relative rotation to the crucibles 1, 2 to effect the grown of the single crystal 19. In the above single crystal pulling up apparatus, a telescope 11 and a camera 10 are attached outside of the chamber 8, and the image sensor 12 and the first and the second temperature sensors 13, 14 are placed behind the camera. The fusion ring at the growing part of the single crystal can be detected and its diameter can be determined by this device. Furthermore, the temperature near the above part and at the surface of the molten liquid apart outward from the first position by a definite distance are measured and the temperature difference is calculated. The above heater 3 is controlled according to the measured values, to control the diameter of the single crystal 19.
摘要翻译：目的：通过测量单晶生长部分附近的温度和熔融液体表面附近的温度，可以控制单晶直径，提高直径大的单晶，位置一定距离，并根据温度差控制熔融液体的加热。构成：将附着在提升轴6上的晶种7与被加热器3包围的石墨坩埚1支撑的石英坩埚2中的熔融液5接触，放置在具有惰性气体气氛的室8中。上拉轴6在与坩埚1,2的相对转动下被拉起，以实现单晶19的生长。在上述单晶提拉装置中，将望远镜11和照相机10安装在室8的外部，并且图像传感器12和第一和第二温度传感器13,14被放置在相机后面。可以检测单晶生长部分的熔合环，并且可以通过该装置确定其直径。此外，测量上述部分附近和在从第一位置向外分开一定距离的熔融液体表面的温度，并计算温度差。上述加热器3根据测量值进行控制，以控制单晶19的直径。

2. 发明专利

JPS59156992A Recharging device for semiconductor-crystal pulling-up machine 失效
标题翻译：用于半导体水晶拉丝机的充电装置
公开(公告)号：JPS59156992A
公开(公告)日：1984-09-06
申请号：JP2739683
申请日：1983-02-21
申请人： Toshiba Ceramics Co Ltd , Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO , KAWANABE ASAJI , HASEBE HITOSHI , MATSUDA MASATO
IPC分类号： C30B15/02 , H01L21/208
CPC分类号： C30B15/02
摘要： PURPOSE:To prevent contamination of impurities by scratches and generation of a bridge and to carry out surely the supply of starting materials by forming the inner surface of a cylindrical body through which semiconductor starting materials are charged to a crucible by opening the bottom plate, with a specified ceramic sintered body. CONSTITUTION:When a stopper 27 of a recharging device is abutted to a stopper receiver 33, and a suspender 23 is further lowered, the lowering of an outer cylinder 4 and a cylindrical body 1 is hindered by the stopper receiver 33. Since only a wire 19 is lowered, a bottom plate 17 is pressed and opened by the own-weight of lump semiconductor starting materials 28 contained thereon, and said materials 28 are charged into a crucible. At this time, when comparatively large amount of said materials 28 are contained in piles in the cylindrical body 1, a bridge A is apt to generate. Since the inner surface of the cylindrical body 1 in this recharging device is formed by a material such as a ceramic sintered body consisting mainly of Si3N4 or Si3N4 to which Y2O3, CeO3 or the like is added as a sintering assistant or a complex ceramic sintered body such as Si3N4 and Al2O3, the hardness at high temp. is high enough and the starting materials 28 fall surely without generation of the bridge A.
摘要翻译：目的：为了防止杂质受到划伤和产生桥梁的污染，并通过将半导体起始材料通过打开底板而将半导体起始材料装入坩埚的圆筒形体的内表面，确定地提供起始材料，规定的陶瓷烧结体。构成：当再充电装置的止动件27抵靠止动器接收器33并且悬挂器23进一步下降时，外筒4和圆筒体1的下降被止动器接收器33阻碍。由于只有线如图19所示，底板17被包含在其上的自身重量的半导体原料28按压并打开，并且将所述材料28装入坩埚中。此时，当在筒体1中堆积较多的所述材料28时，容易产生桥A. 由于该再充电装置中的圆筒体1的内表面由主要由添加有Y 2 O 3，CeO 3等的Si 3 N 4或Si 3 N 4构成的陶瓷烧结体，作为烧结助剂或复合陶瓷烧结体如Si3N4和Al2O3，高温下的硬度。足够高，起始材料28肯定下降而不产生桥A.

3. 发明专利

JPS61122188A Apparatus for pulling up semiconductor single crystal 失效
标题翻译：用于拉伸半导体单晶的装置
公开(公告)号：JPS61122188A
公开(公告)日：1986-06-10
申请号：JP24351284
申请日：1984-11-20
申请人： Toshiba Ceramics Co Ltd , Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , TADA YOSHIAKI , OISHI TOSHIO , OBUCHI NORIYUKI , YAMATO MITSUHIRO , HIGUCHI KOKICHI
IPC分类号： C30B15/26 , H01L21/18 , H01L21/208
CPC分类号： C30B15/26
摘要： PURPOSE:To provide the titled pulling up apparatus having simple and low-cost structure, furnished with a one-dimensional image sensor to inspect the state of the surface of the molten liquid including the center part of the pulled up crystal and crossing the crystal, thereby determining the melting state of the raw material and the diameter of the pulled up crystal. CONSTITUTION:The semiconductor raw material thrown into the crucible 2 placed in the chamber 1 is heated and melted with a heater (not shown in the figure). The seed crystal 5 attached to the end of the pulling up shaft 6 is made to contact with the surface 3a of the molten liquid 3, and pulled up under rotation to effect the growth of the crystal 4. In the above semiconductor crystal pulling up apparatus by Czochralski process, the one-dimensional image sensor 10 is placed outside of the chamber 1, and the molten liquid surface 3a of the pulled up crystal 4 is inspected including the region near the center and crossing the pulled up crystal 4, via the inspection window 8 made of quartz glass plates 7a, 7b, a light-shielding glass plate 9, etc. The molten state of the molten liquid 3 is determined, the fusion ring at the pulled up crystal 4 and thereabout is detected, and the temperature of the molten liquid 3 and the diameter of the pulled up crystal 4 are controlled by this apparatus.
摘要翻译：目的：为了提供具有简单且低成本结构的标题提拉装置，其具有一维图像传感器以检查包括上拉晶体的中心部分的熔融液体的表面状态并与晶体交叉，从而确定原料的熔融状态和拉起的晶体的直径。构成：投入放置在室1中的坩埚2中的半导体原材料用加热器（图中未示出）加热熔化。将附着在提升轴6的端部的晶种5与熔融液3的表面3a接触，并在旋转下拉动，以使晶体4生长。在上述半导体晶体提拉装置通过切克劳斯（Czochralski）工艺，将一维图像传感器10放置在室1的外部，并且通过检查来检查拉出晶体4的熔融液体表面3a，包括靠近中心的区域并与上拉晶体4交叉由石英玻璃板7a，7b，遮光玻璃板9等制成的窗8，确定熔融液3的熔融状态，检测拉出晶体4处的熔融环和其上的熔融环，熔融液3和上拉晶体4的直径由该装置控制。

4. 发明专利

JPS59217693A Apparatus for pulling semiconductor single crystal 失效
标题翻译：用于拉伸半导体单晶的装置
公开(公告)号：JPS59217693A
公开(公告)日：1984-12-07
申请号：JP9138483
申请日：1983-05-24
申请人： Toshiba Ceramics Co Ltd , Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO , HASEBE HITOSHI , MATSUDA MASATO
IPC分类号： C30B15/00 , C30B15/10 , H01L21/208 , H01L21/02
CPC分类号： C30B15/10
摘要： PURPOSE:To suppress the fluctuation of the atmosphere in the furnace chamber caused by the operation of a valve, in an apparatus for pulling a semiconductor crystal grown under reduced pressure, by attaching a pair of switchable inlets of inert gas at the top of the pulling chamber and under the shut-off valve, respectively. CONSTITUTION:The inert gas inlet 11 is attached to the top of the pulling chamber 5, and the other inlet 12 is attached to the connecting path 3 under the shut-off valve 4. Either the inlet 11 or 12 is selected with the selector valve 13. The inside of the pulling apparatus is maintained to a reduced pressure by evacuating through the exhaust port 16 attached to the bottom of the furnace chamber 1. Maintaining the evacuated state, (i) the shut-off valve 4 is opened (as shown by dotted line), the inlet 12 is closed, the inlet 11 is opened, and the single crystal 9 is grown from the molten liquid 18 in the crucible 2 by conventional process; and when a required amount of the single crystal 9 is formed, (2) the crystal is pulled up completely in the pulling chamber 5, the valve 4 and the inlet 11 are closed, the inlet 12 is opened, the door 10 is opened, and the single crystal is taken out of the pulling chamber 5.
摘要翻译：目的：为了抑制由于阀的操作引起的炉室中的气氛的波动，在用于拉动在减压下生长的半导体晶体的装置中，通过在拉动的顶部附接一对可转换的惰性气体入口分别在关闭阀和关闭阀之下。构成：惰性气体入口11附接到拉动室5的顶部，另一个入口12连接到截止阀4下方的连接路径3上。入口11或12是用选择阀选择的通过排出附着在炉室1底部的排气口16将牵引装置的内部保持在减压状态。维持抽空状态，（i）截止阀4打开（如图所示）通过虚线），入口12关闭，入口11打开，单晶9通过常规方法从坩埚2中的熔融液体18生长; 并且当形成所需量的单晶9时，（2）在拉动室5中完全拉出晶体，关闭阀4和入口11，打开入口12，打开门10，并且将单晶从拉出室5中取出。

5. 发明专利

JPS60195085A Apparatus for pulling semiconductor single crystal 失效
标题翻译：用于拉伸半导体单晶的装置
公开(公告)号：JPS60195085A
公开(公告)日：1985-10-03
申请号：JP5304684
申请日：1984-03-19
申请人： Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , TADA YOSHIAKI , OOISHI TOSHIO , OOBUCHI NORIYUKI
IPC分类号： C30B15/30 , H01L21/02 , H01L21/208
CPC分类号： C30B15/30
摘要： PURPOSE:To decrease the leak of a high-pressure vessel of the Czochralski process for pulling and growing a semiconductor single crystal, by placing the mechanism to rotate and push up the raw material crucible and the mechanism to rotate and pull up the single crystal pulling shaft in the pressure vessel excepting the motors to drive the mechanisms. CONSTITUTION:The crucible 2 for receiving the raw mateial of a semiconductor single crystal is placed in the high-pressure vessel 1, and a single crystal pulling shaft 11 holding the seed of the single crystal is suspended vertically above the crucible. The mechanisms to shift and rotate the pushing shaft 3 of the crucible 2 and the pulling shaft 11 of the single crystal are placed in the chambers 21, 21 integrated to the high-pressure vessel 1. Only the motors 4, 8, 12, 16 to drive the above mechanisms are attached to the exterior part of the high-pressure vessel 1. The cylinder device to compensate the thrust load caused by the high pressure and applied to the pushing shaft 3 of the crucible and the pulling shaft 11 of the single crystal is not necessary in the present apparatus. Furthermore, the leakage can be reduced remarkably because the sealing of the apparatus is not necessary except for the parts of the rotary shafts of the motors 4, 8, 12, 16 entering into the chambers 21, 22.
摘要翻译：目的：为了减少用于拉伸和生长半导体单晶的切克拉斯基工艺的高压容器的泄漏，通过放置机构来旋转并推起原料坩埚和旋转并拉起单晶拉力的机构轴在压力容器中除了电机驱动机构。构成：将用于接收半导体单晶的原材料的坩埚2放置在高压容器1中，并且将保持单晶种子的单晶拉拔轴11垂直悬挂在坩埚上方。移动和旋转坩埚2的推动轴3和单晶体的拉动轴11的机构被放置在与高压容器1集成的腔室21,21中。只有马达4,8,12,12 以驱动上述机构附接到高压容器1的外部。用于补偿由高压引起的推压负载并施加到坩埚的推动轴3和单个的拉动轴11的气缸装置在本装置中不需要晶体。此外，除了进入室21,22的电动机4,8,12,12的旋转轴的部分之外，不需要密封装置，因此可以显着降低泄漏。

6. 发明专利

JPS59195597A Lifting apparatus of single crystal semiconductor 失效
标题翻译：单晶半导体提升装置
公开(公告)号：JPS59195597A
公开(公告)日：1984-11-06
申请号：JP6598683
申请日：1983-04-14
申请人： Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO
IPC分类号： C30B15/30
CPC分类号： C30B15/30
摘要： PURPOSE:To reduce considerably the length of expansion of a chamber without increasing the length of a shaft and the height of the apparatus excessively by combining the rotation and lift of the shaft against a lifting member and the lift of the lifting member itself, in a shaft-system lifting machine which is provided with an expandable chamber for taking out a crystal. CONSTITUTION:A shaft 5b is interconnected with a lifting machine 12, which is guided with a guide shaft 6b, so that the shaft may be able to rotated and lift, through a seal 13, fixed to a rotating part 14, and supported by a guide shaft 16, which is moved up and down by means of a lifting part 15, through an arm 17. First, a seed crystal 8 is fixed to the lower end of the shaft 5b, and the crystal 8 is brought into contact with a molten liquid 9 of a semiconductor by lowering the member 12 and lowering simultaneously the shaft 5b against the member 12. Thus a single crystal is grown while revolving by means of the driving part 14. As the crystal is grown, the member 12 is raised slowly to lift the shaft 5b. When a single crystal 10 having a specified length is formed, the revolution of the shaft 5b and the lifting of the member 12 is stopped, and the shaft 5b is raised against the member 12 by lifting a shaft 16 through the driving part 15. When the crystal 10 is raised into a crystal discharging chamber 4b across an interrupting valve 3, the ascension of the shaft 5b is stopped and the valve 3 is closed.
摘要翻译：目的：通过将轴的旋转和提升结合提升构件和升降构件本身的升程组合，可以大幅度减小腔室的膨胀长度，同时不会增加轴的长度和设备的高度，轴系提升机，其具有用于取出晶体的可扩展室。构成：轴5b与起重机12相互连接，起重机12由导向轴6b引导，使得轴能够通过密封件13旋转和提升，该密封件固定到旋转部分14上，并由引导轴16通过臂17借助于提升部分15而上下移动。首先，将晶种8固定到轴5b的下端，并且使晶体8与一个通过降低构件12并同时将轴5b降低到构件12上来使半导体的熔融液体9同时降低。因此，通过驱动部分14旋转，生长单晶。随着晶体生长，构件12缓慢升高以提升轴5b。当形成具有特定长度的单晶10时，轴5b的旋转和构件12的提升停止，并且通过将驱动部15提升轴16将轴5b升高抵靠构件12。晶体10通过断流阀3升高到晶体排放室4b中，轴5b的升高停止，阀3关闭。

7. 发明专利

JPS6183011A Tablet resin preheating and supplying device in transfer mold 失效
标题翻译：转印模具中的片材树脂预加工和提供装置
公开(公告)号：JPS6183011A
公开(公告)日：1986-04-26
申请号：JP4633884
申请日：1984-03-09
申请人： Toshiba Mach Co Ltd
发明人： KUWAKO HIROMU , TAKAHASHI TAKAO , TSUKAHARA YUTAKA , SUGIYAMA HISATAKA
IPC分类号： B29C45/02 , B29C45/46 , B29C45/53 , B29C45/72
CPC分类号： B29C45/462
摘要： PURPOSE:To prevent generation of curing reaction due to local heating by a method wherein the tablet resin of an amount, necessary for one molding cycle or more, is heated sequentially to supply the tablet resin into a mold in each cycle after preheating uniformly. CONSTITUTION:One piece of tablet resin is thrown into a preheating device by a feeder through receiving ports 11 in respective rows one by one at predetermined times. The tablet resin, thrown into the device, is guided by guides 21 and is piled sequentially. The tablet are heated by the convection of heating air so that the tablet in lower side is heated to the highest temperature and the same in the upper side is heated to a lower temperature. The tablet at the lowermost stage is transferred to the mold by the effect of a cylinder 26 in every pouring cycle of supplying the tablet resin by a pushing the second tablet resin from the lowest stage from the lateral direction thereof while the temperature thereof is controlled using a temperature adjusting meter so as to obtain a constant temperature.
摘要翻译：目的：为了防止由局部加热引起的固化反应的产生，其中一次成型循环或更多次所需的量的片剂树脂被顺序加热，以便在均匀预热后的每个循环中将片剂树脂供应到模具中。构成：将一片片剂树脂通过进料器通过预定时间逐个接收各行中的端口11而投入预热装置。投入到装置中的片剂树脂由引导件21引导并依次堆叠。片剂通过加热空气的对流而被加热，使得下侧的片剂被加热到最高温度，并且上侧的片剂被加热到较低的温度。在最下层的片剂通过圆筒26在每一个供给片剂树脂的浇注循环中被转移到模具中，该浇注循环通过从其横向方向从最下层推动第二片剂树脂，同时使用温度调节仪，以获得恒温。

8. 发明专利

JPS60195084A Apparatus for pulling semiconductor single crystal 失效
标题翻译：用于拉伸半导体单晶的装置
公开(公告)号：JPS60195084A
公开(公告)日：1985-10-03
申请号：JP5304584
申请日：1984-03-19
申请人： Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , TADA YOSHIAKI , OOBUCHI NORIYUKI , OOISHI TOSHIO
IPC分类号： C30B15/28 , C30B15/30 , H01L21/02 , H01L21/208
CPC分类号： C30B15/30
摘要： PURPOSE:To control the diameter of the growing single crystal in high accuracy, in the pulling of a single crystal from molten poly-crystals by Czochralski process, by suspending the single crystal with a flexible string. CONSTITUTION:The crucible 3 is placed in the furnace 1 furnished with the heater 4, and molten polycrystalline Si 5 is put in the crucible. A suspending member 20 holding the seed crystal 10 consisting of an Si single crystal is suspended through the hollow pulling shaft 7. The seed crystal is pulled up slowly from the molten polycrystalline Si 5 to effect the growth of the Si single crystal on the seed crystal 10. The bending of the suspending member 20 by the heat in the furnace can be prevented and the member 20 can be held constantly in vertical state by using a flexible string made of a heat-resistant bead-chain as the suspending member 20. Since the there is no excessive force applied to the load cell controlling the diameter of the single crystal 14, the control of the diameter can be carried out in high accuracy.
摘要翻译：目的：为了以高精度控制生长单晶的直径，通过Czochralski工艺从熔融的多晶体中拉出单晶，通过用柔性线悬挂单晶。构成：将坩埚3放置在配备有加热器4的炉1中，将熔融的多晶Si 5放入坩埚中。保持由Si单晶组成的晶种10的悬挂构件20通过中空牵引轴7悬挂。晶种从熔融多晶Si 5缓慢上拉，以实现晶种上的Si单晶的生长通过使用由耐热珠链构成的柔性线作为悬挂构件20，可以防止悬挂构件20在炉中的热量的弯曲，并且可以将构件20保持在垂直状态。由于施加到控制单晶14的直径的测力传感器没有过多的力，可以高精度地进行直径的控制。

9. 发明专利

JPS58225274A Vertical type dynamic bellows 失效
标题翻译：垂直型动态贝壳
公开(公告)号：JPS58225274A
公开(公告)日：1983-12-27
申请号：JP10633282
申请日：1982-06-21
申请人： Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO
IPC分类号： F16J15/52
CPC分类号： F16J15/52
摘要： PURPOSE:To equalize the elongations of the upper and lower parts of the bellows substantially by a method wherein the upper flange of the uppermost bellows and an intermediate flange connecting a plurality of bellows are engaged with an upper plate through a wire and a pulley. CONSTITUTION:When a screw shaft 11 is rotated, the upper flange 8 of the upper bellows 3 moves upwardly or downwardly. The intermediate flanges 1, 2, connecting the upper and lower bellows 3, 4, are engaged with the upper plate 6 through the pulley 10 and the wire 9, therefore, the flanges 1, 2 move by the half of the moving amount of the upper flange 8. The ratio of the deflecting amounts of the upper bellows 3 and the lower bellows 4, which are predetermined initially, is kept constant at all times and, therefore, the elongations of the upper and lower bellows 3, 4 may be equalized substantially.
摘要翻译：目的：为了均衡波纹管的上部和下部的伸长率，基本上通过一种方法，其中最上面的波纹管的上凸缘和连接多个波纹管的中间凸缘通过导线和滑轮与上板接合。构成：当螺杆轴11旋转时，上波纹管3的上凸缘8向上或向下移动。连接上下波纹管3,4的中间凸缘1,2通过皮带轮10和导线9与上板6接合，因此凸缘1,2移动移动量的一半上凸缘8.上波纹管3和初始预定的下波纹管4的偏转量的比率始终保持恒定，因此上波纹管3,4和下波纹管4的伸长率可以相等实质上

10. 发明专利

JPS59195596A Filter for lifting machine of silicon single crystal 失效
标题翻译：硅单晶提升机过滤器
公开(公告)号：JPS59195596A
公开(公告)日：1984-11-06
申请号：JP6804983
申请日：1983-04-18
申请人： Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO
IPC分类号： C30B15/00 , C30B29/06
CPC分类号： C30B15/00
摘要： PURPOSE:To collect silicon oxide without clogging by sucking a gas, generated in a lifting machine, through a hermetic vessel wherein a partition plate having a clearance over the oil which is stored in the lower part is provided, in the reduced-pressure type Si single crystal lifting machine. CONSTITUTION:An introducing pipe 12 which is connected with an Si single crystal lifting machine, and a discharge pipe 13 which is connected with a vacuum pump, are provided at both ends of the upper surface of a hermetic vessel 11 which is round- or square-shaped. An oil 14, having a low vapor pressure, is filled in the lower half part of the vessel 11, and >=1 partition plate 16 are provided in the upper space, leaving a clearance 15 between the lower end and the surface of the oil 14. A lid 17 is provided at the side of the vessel 11 for replacing the oil 14. The Si oxide, generated in the Si single crystal lifting machine, is sucked by a vacuum pump, and introduced into the vessel 11 along with the gas. At this time, the Si oxide, due to its high temp., is adsorbed into the low temp. oil 14 by the contact therewith. The stream of the Si oxide, which is left unadsorbed, is agitated by the plate 16, brought into contact with the oil 14, and adsorbed.
摘要翻译：目的：通过在提升机中产生的气体，通过在密闭容器中吸收气体来收集氧化硅而不堵塞，其中设置有存储在下部的油上的间隙的隔板，在减压型Si 单晶起重机。构成：与Si单晶提升机连接的导入管12和与真空泵连接的排出管13设置在圆形或正方形的密封容器11的上表面的两端 -成形。具有低蒸汽压力的油14被填充在容器11的下半部分中，并且> = 1分隔板16设置在上部空间中，在油的下端和表面之间留下间隙15 在容器11的侧面设置有用于更换油14的盖17.在Si单晶提升机中产生的Si氧化物被真空泵吸入，并与气体一起引入容器11 。此时，Si氧化物由于其高温吸附在低温下。油14与其接触。未吸附的Si氧化物流被板16搅拌，与油14接触并被吸附。

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