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    • 3. 发明专利
    • Semiconductor device and method for manufacturing the same
    • 半导体器件及其制造方法
    • JP2011114039A
    • 2011-06-09
    • JP2009266869
    • 2009-11-24
    • Ibiden Co Ltdイビデン株式会社
    • TSUKADA KIYOTAKAMURAKI TETSUYAYAMASHITA TAKASHIGETOMITA YOSHITOMO
    • H01L23/12H01L21/3205H01L23/52
    • H01L23/49827H01L21/486H01L24/01H01L2224/32225H01L2924/12042H01L2924/1301H01L2924/1305H01L2924/13055H01L2924/351H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a semiconductor device having a large allowable current, and also to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device 101 is equipped with: a support plate 30, a semiconductor element 10 (IGBT chip), and conductor posts 40 each made of a columnar conductor and having a first end portion on one end and a second end portion 42a on the other end. On the support plate 30, a plurality of holes 30b are formed, and conductors 33 are formed on the wall surfaces of the holes 30b respectively. The second end portion 42a of each of the conductor posts 40 is connected to electrodes 12-14 of the semiconductor element 10 via the conductive materials 72a-72c. The side surfaces of the conductor post 40 are fixed to the wall surfaces (conductors 33) of the holes 30b deformed by a pressure of the conductor post 40 on a side closer to a first end portion than the second end portion 42a. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供具有大的容许电流的半导体器件,并且还提供一种用于制造半导体器件的方法。 解决方案:半导体器件101配备有:支撑板30,半导体元件10(IGBT芯片)和导体柱40,每个导体柱由柱状导体制成,并且在一端具有第一端部,第二端 另一端的部分42a。 在支撑板30上形成有多个孔30b,并且分别在孔30b的壁表面上形成导体33。 每个导体柱40的第二端部42a经由导电材料72a-72c连接到半导体元件10的电极12-14。 导体柱40的侧表面固定在孔30b的壁表面(导体33)上,该壁表面(导体33)在靠近比第二端部42a的第一端部更靠近导体柱40的压力下变形。 版权所有(C)2011,JPO&INPIT