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1. 发明专利

JP2008053445A Process for fabricating silicon element 有权
标题翻译：制造硅元件的工艺
公开(公告)号：JP2008053445A
公开(公告)日：2008-03-06
申请号：JP2006227999
申请日：2006-08-24
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SO JUSEI , SUGA HIROBUMI
IPC分类号： H01L33/34 , H01L33/44 , H05B33/10 , H05B33/14
CPC分类号： H01L33/0054
摘要： PROBLEM TO BE SOLVED: To provide a process for fabricating a silicon element in which physical characteristics, such as emission intensity, are enhanced through a simple processing process. SOLUTION: The process for fabricating a silicon element comprises a step for forming a silicon layer 4a, showing second conductivity type on the first face S1a of a silicon substrate 2a that shows first conductivity type, and a step for exposing the third face S3a of the silicon layer 4a to an atmosphere that is regulated to have a temperature range of 400°C-900°C and a pressure range of 4 MPa-200 MPa for 30 min-6 hours, following the step for forming a silicon layer 4a. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过简单的处理工艺提高其中诸如发射强度等物理特性的硅元件的制造工艺。解决方案：制造硅元件的方法包括形成硅层4a的步骤，在显示第一导电类型的硅衬底2a的第一面S1a上显示第二导电类型，以及用于暴露第三面 S3a到调整为400℃-900℃的温度范围和4MPa-200MPa的压力范围30分钟-6小时的气氛，在形成硅层的步骤之后 4A。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2004083343A METHOD FOR PRODUCING β-FeSi2 FILM 有权
公开(公告)号：JP2004083343A
公开(公告)日：2004-03-18
申请号：JP2002247181
申请日：2002-08-27
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SO JUSEI , SUGA HIROBUMI , FURUTA SHINICHI
IPC分类号： C01B33/06 , C30B29/52 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To deposit a β-FeSi
2 film having high crystallinity on an Si substrate.
SOLUTION: The method is provided with a cleaning stage where an Si substrate is subjected to heating cleaning; an initial layer forming stage where an initial layer consisting of β-FeSi
2 is formed on the Si substrate at a first temperature; and a growing stage where the initial layer is grown at a second temperature higher than the first temperature. The first temperature is, e.g., 440 to 520°C. The second temperature is, e.g., 700 to 760°C. The β-FeSi
2 film having high crystallinity can be obtained by forming the initial layer at the relatively low temperature, and then growing the same at the temperature higher than that.
COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2010114262A Silicon light-emitting device 有权
标题翻译：硅光发射装置
公开(公告)号：JP2010114262A
公开(公告)日：2010-05-20
申请号：JP2008285545
申请日：2008-11-06
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SO JUSEI , SUGA HIROBUMI
IPC分类号： H01L33/00 , H01S5/32
CPC分类号： H01L33/34 , H01L33/0008 , H01L33/025
摘要： PROBLEM TO BE SOLVED: To provide a silicon light-emitting device applicable to a light source of a silicon photonics.
SOLUTION: The silicon light-emitting device includes: a silicon substrate of first conductive type having a first surface and a second surface in the opposite side to the first surface; an insulating film formed on the first surface of the silicon substrate; a silicon layer formed on the insulating film and having a second conductive type different from the first conductive type; a first electrode formed on the silicon layer; and a second electrode formed on the second surface of the silicon substrate. The carrier concentration of the silicon substrate is 5×10
15 to 5×10
18 cm
-3 , the carrier concentration of the silicon layer is 1×10
17 to 5×10
19 cm
-3 and is larger by one digit or more as compared with that of the silicon substrate, and the thickness of the insulating film is 0.3-5 nm.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供适用于硅光子学光源的硅发光器件。解决方案：硅发光器件包括：具有第一表面的第一导电类型的硅衬底和与第一表面相反的一侧的第二表面; 形成在硅衬底的第一表面上的绝缘膜; 形成在绝缘膜上并具有不同于第一导电类型的第二导电类型的硅层; 形成在所述硅层上的第一电极; 以及形成在硅衬底的第二表面上的第二电极。硅衬底的载流子浓度为5×10 15 <5×10 18 cm -3 ，硅层的载流子浓度为 1×10 17 至5×10 19 cm -3 ，与硅衬底相比大一位以上，绝缘膜的厚度为0.3〜5nm。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2008053446A Semiconductor element 有权
标题翻译：半导体元件
公开(公告)号：JP2008053446A
公开(公告)日：2008-03-06
申请号：JP2006228007
申请日：2006-08-24
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SO JUSEI , SUGA HIROBUMI
IPC分类号： H01L33/16 , H01L33/34
CPC分类号： H01L33/34 , H01L33/025 , H01L33/343
摘要： PROBLEM TO BE SOLVED: To enhance emission intensity of a silicon semiconductor element. SOLUTION: The semiconductor element comprises a first conductive silicon substrate 2a having a first surface S1a and a second surface S2a, a second conductive silicon layer 4a provided on the first surface S1a of the silicon substrate 2a and having a third surface S3a on the side opposite to the bonding surface with the silicon substrate 2a, a first electrode 12a provided on the second surface S2a, a second electrode 14a provided on the third surface S3a, and an argon-doping region 6a formed in a semiconductor region consisting of the silicon substrate 2a and the silicon layer 4a, wherein the argon-doping region 6a includes a region having argon concentration of 1×10 18 cm -3 -2×10 20 cm -3 . COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提高硅半导体元件的发光强度。解决方案：半导体元件包括具有第一表面S1a和第二表面S2a的第一导电硅衬底2a，设置在硅衬底2a的第一表面S1a上并具有第三表面S3a的第二导电硅层4a 与硅衬底2a的接合表面相对的一侧，设置在第二表面S2a上的第一电极12a，设置在第三表面S3a上的第二电极14a和形成在由第二表面S2a组成的半导体区域中的氩掺杂区域6a 硅衬底2a和硅层4a，其中氩掺杂区域6a包括氩浓度为1×10 18 -2×10 20 厘米 -3 。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2012229306A Ultraviolet light-generating target, electron-beam-excited ultraviolet light source, and method for producing ultraviolet light-generating target 有权
标题翻译：超紫外线发光靶，电子束激光紫外光源，以及生产超紫外线发光靶的方法
公开(公告)号：JP2012229306A
公开(公告)日：2012-11-22
申请号：JP2011097260
申请日：2011-04-25
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： HONDA CHIKANORI , FUKUYO FUMITSUGU , SUZUKI TAKASHI , ICHIKAWA NORIO , HATTORI TSUYOAKI , KAWAI KOJI , SO JUSEI
IPC分类号： C09K11/80
CPC分类号： F21K2/00 , C09K11/7766 , H01J63/04 , H01J63/06
摘要： PROBLEM TO BE SOLVED: To provide: an ultraviolet light-generating target that can increase ultraviolet light generation efficiency; an electron-beam-excited ultraviolet light source; and a method for producing the ultraviolet light-generating target.SOLUTION: An ultraviolet light-generating target 20 is provided with: a substrate 21 comprising sapphire, quartz, or rock crystal; and a Pr:LuAG polycrystalline film 22 that is provided on the substrate 21 and that generates ultraviolet light by receiving an electron beam. It is possible to significantly increase ultraviolet light generation efficiency compared to when using a Pr:LuAG monocrystalline film by means of using Pr:LuAG polycrystals as the target.
摘要翻译：解决的问题：提供：能够提高紫外线发生效率的紫外线发光靶; 电子束激发的紫外光源; 以及紫外线发生靶的制造方法。解决方案：紫外线发光靶20设置有：包括蓝宝石，石英或岩石晶体的基板21; 以及设置在基板21上并通过接收电子束产生紫外线的Pr：LuAG多晶膜22。与使用Pr：LuAG多晶体作为目标的Pr：LuAG单晶膜相比，可以显着提高紫外线发光效率。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2006019426A Light emitting element and its manufacturing method 有权
标题翻译：发光元件及其制造方法
公开(公告)号：JP2006019426A
公开(公告)日：2006-01-19
申请号：JP2004194652
申请日：2004-06-30
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SO JUSEI , SUGA HIROBUMI , HIROHATA TORU , HIRUMA TERUO
IPC分类号： H01L33/26 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element with high luminescence intensity employing β-FeSi 2 . SOLUTION: The light emitting element 10 has a β-FeSi 2 film 12 provided on an Si substrate 11 and an Si cap layer 13 provided on the β-FeSi 2 film 12. A lower electrode 14 is provided on the rear 11b of the substrate 11, and an upper electrode 15 is provided on the surface 13a of the Si cap layer 13, respectively. The β-FeSi 2 film 12 has the same conductivity as that of the Si substrate. The Si cap layer 13 has different conductivity from that of the β-FeSi 2 film 12. The light emitting element thus constituted has high luminescence intensity. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：使用β-FeSi 2 提供具有高发光强度的发光元件。解决方案：发光元件10具有设置在Si衬底11上的β-FeSi 2 膜12和设置在β-FeSi SB 2上的Si覆盖层13 >膜12.在基板11的后部11b上设置有下部电极14，在Si覆盖层13的表面13a上分别设置上部电极15。 β-FeSi 2 膜12具有与Si衬底相同的导电性。 Si覆盖层13具有与β-FeSi 2 膜12的导电性不同的导电性。由此构成的发光元件具有高的发光强度。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2004095858A Light emitting element and manufacturing method thereof 有权
公开(公告)号：JP2004095858A
公开(公告)日：2004-03-25
申请号：JP2002255007
申请日：2002-08-30
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： SO JUSEI , SUGA HIROBUMI
IPC分类号： H01L21/203 , H01L33/34 , H01L33/00
CPC分类号： H01L33/0004 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element comprising a β-FeSi 2 film on an Si substrate. SOLUTION: A light emitting element 10 comprises an Si substrate 1, a β-FeSi 2 film 2 which is provided on the surface Si substrate 1 and has a conductive type different from that of the Si substrate, a first electrode 3 provided on the rear surface side of the Si substrate 1, and a second electrode 4 provided on the front surface side of the β-FeSi 2 film 2. A pn-junction is formed between the Si substrate 1 and the β-FeSi 2 film 2. The light emitting element 10 comprises a continuous β-FeSi 2 film 2 provided on the Si substrate 1 as a light emitting layer. The light emission characteristics is immune to the effect of kind or purity of the substrate. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2003273417A (100)-oriented copper oxide high temperature superconducting thin film and method of manufacturing the same 有权
标题翻译：（100） - 氧化铜氧化物高温超导薄膜及其制造方法
公开(公告)号：JP2003273417A
公开(公告)日：2003-09-26
申请号：JP2002073126
申请日：2002-03-15
申请人： Hamamatsu Photonics Kk , Japan Science & Technology Corp , 浜松ホトニクス株式会社 , 科学技術振興事業団
发明人： TANAKA KAZUNORI , SO JUSEI , TERAJIMA TAKAHITO , SUGA HIROBUMI , TAKANO MIKIO
IPC分类号： C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a (100)-oriented copper oxide superconductor thin film having superior superconductivity in a direction perpendicular to a substrate surface, and also to provide a method of manufacturing the same.
SOLUTION: The (100)-oriented copper oxide superconductor thin film comprises a (100)-oriented LaSrAlO
4 monocrystalline substrate 3 and a (100)-oriented La
2-x Sr
x CuO
4 superconducting thin film 4 epitaxially grown on the monocrystalline substrate 3, and has a flat surface. The (100)-oriented copper oxide superconductor thin film is formed by a laser ablation method. CuO
2 faces of the (100)-oriented La
2-x Sr
x CuO
4 superconducting thin film 4 are arranged in parallel to each other in a direction perpendicular to the substrate surface, thereby increasing a superconducting coherence length in a direction perpendicular to the substrate surface, which enables the (100)-oriented copper oxide superconductor thin film to be used in a superconducting device which uses superconductivity in a direction perpendicular to the substrate surface.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供在垂直于基板表面的方向上具有优异的超导性的（100）取向的氧化铜超导体薄膜，并且还提供其制造方法。（100）取向的氧化铜超导体薄膜包括（100）取向的LaSrAlO 4 SBB单晶衬底3和（100）取向的La SB 2-x < / SB>超导薄膜4，其外延生长在单晶衬底3上，并且具有平坦表面。（100）取向氧化铜超导体薄膜是通过激光烧蚀法形成的。（100）取向的La 2 S x S x S x S x O x S 4超导薄膜4的CuO 2 面在垂直于衬底表面的方向上彼此平行地布置，从而在垂直于衬底表面的方向上增加超导相干长度，这使得（100）取向的氧化铜超导体薄膜能够用于超导在垂直于衬底表面的方向上使用超导性的器件。版权所有（C）2003，JPO

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