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1. 发明专利

JP2013140854A Photoconduction antenna, terahertz wave generation device, camera, imaging device, and measurement device 有权
标题翻译：光电天线，TERAHERTZ波形发生装置，摄像机，成像装置和测量装置
公开(公告)号：JP2013140854A
公开(公告)日：2013-07-18
申请号：JP2011290068
申请日：2011-12-28
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： TOMIOKA HIROTO
IPC分类号： H01S1/02 , G01N21/27 , G01N21/35 , H01L31/00
CPC分类号： H01L33/0004 , H01L31/09 , H01L31/105 , H01L31/16 , H01Q23/00
摘要： PROBLEM TO BE SOLVED: To provide a photoconduction antenna, a terahertz wave generation device, a camera, an imaging device, and a measurement device capable of generating a terahertz wave with efficiency.SOLUTION: A photoconduction antenna 2 generates a terahertz wave by being irradiated with pulse light. The photoconduction antenna 2 comprises: a first conductive layer made of a semiconductor material containing an impurity of a first conductivity type; a second conductive layer made of a semiconductor material containing an impurity of a second conductivity type different from the first conductivity type; a semiconductor layer sandwiched between the first and second conductive layers, and made of a semiconductor material having a lower carrier concentration than the semiconductor material of the first conductive layer or the semiconductor material of the second conductive layer; a first electrode electrically connected with the first conductive layer; and a second electrode electrically connected with the second conductive layer. The pulse light is entered into a surface of the semiconductor layer having a normal line perpendicular to a lamination direction of the first conductive layer, the semiconductor layer, and the second conductive layer.
摘要翻译：要解决的问题：提供一种光电导天线，太赫波产生装置，照相机，成像装置和能够有效地产生太赫兹波的测量装置。解决方案：光电导天线2通过照射产生太赫兹波带脉冲灯。光电导天线2包括：由包含第一导电类型的杂质的半导体材料制成的第一导电层; 由含有不同于第一导电类型的第二导电类型的杂质的半导体材料制成的第二导电层; 夹在第一和第二导电层之间的半导体层，由具有比第一导电层的半导体材料或第二导电层的半导体材料的载流子浓度低的半导体材料制成; 与所述第一导电层电连接的第一电极; 以及与第二导电层电连接的第二电极。脉冲光进入具有垂直于第一导电层，半导体层和第二导电层的层叠方向的法线的半导体层的表面。

2. 发明专利

JP4142374B2 Light-emitting element 有权
公开(公告)号：JP4142374B2
公开(公告)日：2008-09-03
申请号：JP2002255007
申请日：2002-08-30
申请人：浜松ホトニクス株式会社
发明人：樹成楚 , 博文菅
IPC分类号： H01L21/203 , H01L33/34
CPC分类号： H01L33/0004 , H01L33/40

3. 发明专利

JP2007281081A Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2007281081A
公开(公告)日：2007-10-25
申请号：JP2006103325
申请日：2006-04-04
申请人： Rohm Co Ltd , ローム株式会社
发明人： SHAKUDA YUKIO
IPC分类号： H01L33/08 , H01L33/12 , H01L33/32
CPC分类号： H01L33/0004 , H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device in which an emission area can be increased without causing the enlargement of the overall size of the device.
SOLUTION: In the semiconductor light-emitting device 1, a plurality of transistors 6 are arranged in two rows. Each transistor 6 has an n-type high-temperature buffer layer 8, and p-type clad layers 11a and 11b on both sides of the high-temperature buffer layer 8 in the direction of row. Through an interconnection 16, the p-type clad layer 11a of the transistor 6 disposed on one row and the p-type clad layer 11b of the transistor 6 adjacent to the above transistor 6 at one side in the row direction are connected to the high-temperature layer 8 of the transistor 6 disposed on the other row. Through an interconnection 17, the p-type clad layer 11a of the transistor 6 disposed on the other row and the p-type clad layer 11b of the transistor 6 adjacent to the above transistor 6 at one side in the row direction are connected to the high-temperature layer 8 of the transistor 6 disposed on one row.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种其中可以增加发射面积而不引起器件的整体尺寸的扩大的半导体发光器件。解决方案：在半导体发光器件1中，多个晶体管6布置成两行。每个晶体管6在高温缓冲层8的两侧具有n型高温缓冲层8和p型覆盖层11a和11b。通过布线16，配置在一行的晶体管6的p型覆盖层11a和在行方向一侧与上述晶体管6相邻的晶体管6的p型覆盖层11b被连接到高设置在另一排上的晶体管6的温度层8。通过互连17，配置在另一排上的晶体管6的p型覆盖层11a和与行晶体管6的一侧相邻的晶体管6的p型覆盖层11b连接到晶体管6的高温层8设置在一行上。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2005328042A Optical system for light-emitting diode 有权
标题翻译：用于发光二极管的光学系统
公开(公告)号：JP2005328042A
公开(公告)日：2005-11-24
申请号：JP2005118868
申请日：2005-03-18
申请人： Lumileds Lighting Us Llc , ルミレッズライティングユーエスリミテッドライアビリティカンパニー
发明人： KEUPER MATTHIJS H , KRAMES MICHAEL R , MUELLER GERD O
IPC分类号： G03B21/00 , G02F1/13357 , G03B21/14 , H01L33/00 , H01L33/16 , H01L33/32 , H01L33/44
CPC分类号： H04N9/3152 , H01L33/0004 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/44 , H01L33/507 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide an optical system which uses an LED and achieves a sufficient radiance for the use of a high radiance.
SOLUTION: A light-emitting device includes a light-emitting diode (LED), a condenser element such as a composite parabolic condenser, and a wavelength conversion material such as a phosphor. The condenser element receives light from the LED and emits the light from an exit area smaller than an entrance area. The wavelength conversion material is disposed, for example, so as to cover the exit area. The radiance of the LED is kept or increased regardless of the isotropic reemitted light of the wavelength conversion material. In one embodiment, polarization from a polarized LED is supplied to a polarization optical system such as a microdisplay. In another embodiment, orthogonal polarizations from two polarized LEDs are coupled, for example, through a polarizing beam splitter and supplied to a non-polarization optical system such as a microdisplay. Further, the condenser element can be disposed between the beam splitter and the microdisplay.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用LED并实现足够的辐射以使用高辐射度的光学系统。解决方案：发光器件包括发光二极管（LED），诸如复合抛物面电容器的聚光元件和诸如磷光体的波长转换材料。聚光元件从LED接收光，并从小于入口区域的出口区域发射光。波长转换材料例如被设置为覆盖出射区域。无论波长转换材料的各向同性再发射光如何，LED的辐射率都保持或增加。在一个实施例中，来自偏振LED的偏振被提供给诸如微显示器之类的偏振光学系统。在另一个实施例中，来自两个偏振LED的正交极化例如通过偏振分束器耦合并被提供给诸如微显示器之类的非偏振光学系统。此外，聚光元件可以设置在分束器和微显示器之间。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JPS6113675A Photomultiplying light-emitting element 失效
标题翻译：照明发光元件
公开(公告)号：JPS6113675A
公开(公告)日：1986-01-21
申请号：JP13188484
申请日：1984-06-28
申请人： Matsushita Electric Ind Co Ltd
发明人： TAKESHIMA MASUMI
IPC分类号： H01L31/14 , H01L33/30 , H01L33/40 , H01L33/50 , H01S5/00
CPC分类号： H01L33/0004
摘要： PURPOSE:To intensify and convert short wavelength beams into long wavelength beams by irradiating three-layer structure, in which a semiconductor having small forbidden band width is held by semiconductors having large forbidden band width, by beams and applying breakdown voltage between two layers on the irradiated side. CONSTITUTION:An electrode 4 is biasses at a negative value to electrode 5, and the voltage of the electrode 4 is set at the breakdown voltage value of a junction between a P-InP layer 1 and a P-In0.53Ga0.47As layer 2. An electrode 6 is biased at a negative value to electrodes 5, and the voltage of the electrode 6 is set at a value lower than the breakdown voltage value of a junction between the layer 2 and a P-InP layer 3. The forbidden band width of the layers 1 and 3 is made larger than that of the layer 2, and positioned at the position of energy higher than the acceptor levels of the layers 1 and 3. When voltage is applied, carriers generated in the layer 1 by projecting beams are accelerated by voltage, and have high energy. Novel electron-hole pairs are generated through the impact ionization of carriers, and the number of carriers is multiplied. Electrons and holes radiative-recombine, and the beams of energy in the forbidden band width of the layer 2, long wavelength beams, are emitted.
摘要翻译：目的：通过照射三层结构强化并将短波长光束转换成长波长光束，其中具有较小禁带宽度的半导体的半导体具有较大禁带宽度的半导体的三层结构通过光束并在两层之间施加击穿电压照射侧。构成：电极4以负值对电极5进行偏置，电极4的电压设定为P-InP层1和P-In0.53Ga0.47As层2之间的接合点的击穿电压值电极6以负值偏置于电极5，电极6的电压设定为低于层2和P-InP层3之间的接合点的击穿电压值的值。禁带使层1和3的宽度大于层2的宽度，并且位于比层1和层3的受主电平高的能量位置。当施加电压时，通过将光束被电压加速，并具有高能量。通过载流子的冲击电离产生新的电子 - 空穴对，并且载体的数量相乘。发射电子和空穴，并发射第2层的禁带宽度的能量束（长波束）。

6. 发明专利

JPS59127886A Light-emitting diode 失效
标题翻译：发光二极管
公开(公告)号：JPS59127886A
公开(公告)日：1984-07-23
申请号：JP267883
申请日：1983-01-11
申请人： Nec Corp
发明人： SUZUKI AKIRA
IPC分类号： H01L33/14 , H01L33/16 , H01L33/24 , H01L33/30 , H01L33/40
CPC分类号： H01L33/0004
摘要： PURPOSE:To compensate the lowering of injection-current density in a luminescence peripheral section due to a current spread, to increase the speed of response of a peripheral light-emitting component and to improve the response characteristics of the whole element by making the thickness of an active layer in the luminescence peipheral section smaller than that of the active layer in a luminescence central section. CONSTITUTION:A semicondutor substrate 1 consists of an InP single crystal, a face orientation thereof is 100 and to which Sn in doped in 1X10 cm , and approximately 90mum thick, a torus-shaped mesa structure 8 has an inner diameter of 25mum and an outer diameter of 35mum and is 1mum high, thickness on the torus-shaped mesa structue 8 is 0.5mum because the thickness of a flat section is 1.5mum in an active layer 2, a clad layer 3 is 1mum thick, and an electrode forming layer 4 is 1mum thick. A current constriction layer 5 is 0.1mum thick, and a circular current injecting section 10 of a 25mum diameter positioned at the upper section of the torus-shaped mesa structure 8 is removed through chemical etching. A light-emitting window 9 of an approximately 150mum diameter is removed through chemical etching in an N side electrode 6. Only the current injecting section 10 forms an ohmic contact with the electrode forming layer 4, currents are constricted and injected, and light is extracted from the light-emitting window 9.
摘要翻译：目的：为了补偿由于电流扩散引起的发光周边部分中的注入电流密度的降低，为了增加外围发光部件的响应速度，并且通过使整个元件的厚度发光外围部分中的活性层小于发光中心部分中的有源层的活性层。构成：半导体衬底1由InP单晶构成，其面取向为100，并且在1×10 18 cm -3中掺杂的Sn和约90μm厚的环形台面结构8具有内径为25μm，外径为35μm，高1um，环形台面结构8的厚度为0.5μm，因为有源层2中的平坦部分的厚度为1.5μm，包覆层3为1μm厚，电极形成层4的厚度为1μm。电流收缩层5为0.1μm厚，通过化学蚀刻除去位于环形台面结构8的上部的25μm直径的圆形电流注入部10。通过N侧电极6中的化学蚀刻除去约150μm直径的发光窗9.只有电流注入部10与电极形成层4形成欧姆接触，电流被收缩并注入，并且提取光从发光窗口9。

7. 发明专利

JPS59127885A Semiconductor light-emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：JPS59127885A
公开(公告)日：1984-07-23
申请号：JP267783
申请日：1983-01-11
申请人： Nec Corp
发明人： SUZUKI AKIRA
IPC分类号： H01L33/14 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/026 , H01S5/183
CPC分类号： H01L33/0004 , H01S5/2072 , H01S5/2214
摘要： PURPOSE:To constitute a differentiation compensating circuit integrally, and to improve response characteristics without adjustment by pushing a dielectric insulating film between a clad region of the upper section of a current construction section and a current injecting electrode. CONSTITUTION:The titled element is constituted by an active layer 2 grown on a semiconductor substrate 1 in an epitaxial manner, a first clad layer 3, a current construction layer 4, a second clad layer 5, a P side electrode 6 consiting of an Au-Zn alloy, an N side electrode 7 consiting of an Au-Ge-Ni alloy and a dielectric insulating film 8 consisting of SiO2. A current construction section 10 is formed by selectiely diffusing Zn into the current constriction layer 4 in a circular shape of a 30mum diameter. The dielectric insulating film 8 is formed to the upper section of the current constriction section 10 in a circular shape of a 90mum diameter. A light-emitting window 9 of an approximately 150mum diameter is removed through chemical etching in the N side electrode 7. Accordingly, injection currents are constricted circularly by the current constriction section 10 of the 30mum diameter, and the titled element operates as a surface light- emitting diode extracting light from the light-emitting window 9.
摘要翻译：目的：一体化构成差分补偿电路，通过在当前构造部的上部的包层区域和电流注入电极之间推压介电绝缘膜而不进行调整来提高响应特性。标准要素由外延生长在半导体衬底1上的有源层2，由Au构成的第一覆盖层3，电流施工层4，第二覆盖层5，P侧电极6构成。 -Zn合金，由Au-Ge-Ni合金构成的N侧电极7和由SiO 2构成的介电绝缘膜8。通过将Zn选择性地以30μm直径的圆形形式扩散到电流收缩层4中而形成电流构造部分10。电介质绝缘膜8形成为电流收缩部10的上部，直径为90μm的圆形。通过N侧电极7中的化学蚀刻除去大约150μm直径的发光窗口9.因此，注射电流由30μm直径的电流收缩部分10循环地收缩，并且标题元件作为表面光 - 发光二极管从发光窗口9提取光。

8. 发明专利

JP2017195396A 発光デバイスおよびその作製方法审中-公开
公开(公告)号：JP2017195396A
公开(公告)日：2017-10-26
申请号：JP2017115734
申请日：2017-06-13
申请人：ザリージェンツオブザユニバーシティオブカリフォルニア , 国立研究開発法人科学技術振興機構
发明人：ロバート・エム・ファレル , トロイ・ジェー・ベーカー , アーパン・チャクラボーティ , ベンジャミン・エー・ハスケル , ピー・モルガン・パチソン , ラジャット・シャーマ , ウメシュ・ケー・ミシュラ , スティーブン・ピー・デンバース , ジェームス・エス・スペック , シュウジ・ナカムラ
IPC分类号： H01L21/205 , H01S5/343
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/34333 , H01L21/02389 , H01S2304/04 , H01S5/0422 , H01S5/2201 , H01S5/3202
摘要：【課題】大きな面積をもつ半極性(Ga,Al,In,B)N薄膜、ヘテロ構造、およびデバイスの実現方法を提供する。【解決手段】{100}スピネル基板1502を用いて{10−11}半極性GaNテンプレート1504を成長し、n−GaN層1506の再成長を行う。次にn−AlGaN/GaNクラッド層1508を成長し、その上にn−GaN導波路層1510を成長する。次にMQW活性層1512を成長し、そのMQW活性層1512上にp−GaN導波路層1514が成長される。そこでもう1つのクラッド層1516を成長し、p−GaNコンタクト層を成長する。Ni/Au電極1520およびTi/Al/Ni/Au電極1522が成膜される。半極性方位の中で、{10−11}方位1501は最大の結晶角(θ=62.0°)を持ち、最も大きな光学利得の改善を提供できる。【選択図】図15

9. 发明专利

JPWO2016051739A1 点灯装置审中-公开
公开(公告)号：JPWO2016051739A1
公开(公告)日：2017-07-13
申请号：JP2016551525
申请日：2015-09-25
申请人：パナソニックIpマネジメント株式会社
发明人：純水野 , 純水野
IPC分类号： H05B37/02
CPC分类号： H02M3/156 , H01L33/0004 , H02M2001/0025 , H05B33/0815 , H05B37/02
摘要：点灯装置は、DC/DCコンバータと、駆動回路と、遅延回路と、を備える。駆動回路は、固体発光素子に定電流を流すのに必要な電圧が固体発光素子に印加されているか否かを示すフィードバック信号と、固体発光素子に対する電流供給期間を示すPWM信号と、を生成する。遅延回路は、PWM信号に対して、電流供給期間の開始および終了の少なくとも一方のタイミングを遅延させる。DC/DCコンバータは、スイッチング素子と、遅延回路でタイミングが遅延されたPWM信号によって定まるオン・デューティの期間に、スイッチング素子に対して、駆動回路から生成されるフィードバック信号に応じたスイッチングを行わせる制御をする制御回路と、を有する。

10. 发明专利

JP6003063B2 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置有权
公开(公告)号：JP6003063B2
公开(公告)日：2016-10-05
申请号：JP2012007939
申请日：2012-01-18
申请人：セイコーエプソン株式会社
发明人：竹中敏
IPC分类号： G01N21/3586 , H01S1/02
CPC分类号： H01L33/30 , G01J3/2823 , G01J5/10 , G01N21/3586 , H01L31/09 , H01L31/105 , H01L31/16 , H01L33/0004 , G01J2005/0077 , G02F2202/12 , G02F2203/13 , H01L31/03046 , H01L31/1844

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