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1. 发明专利

JPH09205057A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09205057A
公开(公告)日：1997-08-05
申请号：JP1066896
申请日：1996-01-25
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HATTORI KEIKO , HATTORI KOJI , SHIRAISHI HIROSHI , TSUTSUI KEN , FUKUMOTO YOSHIKO , ONOZUKA TOSHIHIKO , SHIRAI SEIICHIRO
IPC分类号： G03F7/11 , G03F7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To perform collective exposure and development by providing an interlayer separation film of specified material exhibiting photosensitivity similar to that of first and second photoresists between first and second photoresist layers thereby forming a multilayer structure while suppressing the mixing. SOLUTION: A first positive or negative photoresist layer is formed on a semiconductor substrate and a second photoresist layer of the same type is formed thereon. The plurality of photoresist layers are subjected to the same exposing/developing step to form a resist pattern. In this regard, an interlayer separation film having the same photosensitivity as that of first and second photoresists is provided between first and second photoresist layers. The interlayer separation film is formed of a material insoluble to the solvent of second photoresist using a solvent insoluble to the first photoresist layer.

2. 发明专利

JPH0844052A FORMATION OF PATTERN AND RADIATION SENSITIVE COMPOSITION USING SAME 失效
公开(公告)号：JPH0844052A
公开(公告)日：1996-02-16
申请号：JP18003194
申请日：1994-08-01
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HATTORI KOJI , UENO TAKUMI , IMAI AKIRA , YAMAMOTO JIRO , TANAKA TOSHIHIKO , ONOZUKA TOSHIHIKO , MORIUCHI NOBORU , SHIRAI SEIICHIRO
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PURPOSE:To form a fine pattern in which dimensional variation is reduced without increasing the number of stages by using a positive radiation sensitive composition and changing a thickness of a film. CONSTITUTION:When a desired pattern is made by forming a film consisting of a radiation sensitive composition on a substrate, exposing the film by using patterned radioactive rays and exposing the film to a developing agent after heating the film preferably, the positive radiation sensitive composition is used as the radiation sensitive composition, and a thickness of the film is composed so that it changes >=0.7lambda/2n by exposure when its refractive index is defined as (n) and a wavelength of the radioactive rays is defined as lambda. Further, when the film thickness is differ partially, a part where the film thickness is thinnest in an exposed part is measured. And this change is preferably set at >=lambda/2n. Moreover, this change is caused by the decrease of the film thickness preferably. When the film thickness decreases, the decrease is less than 40% of the film thickness before exposure and the film thickness after exposure is preferably more than 60% of the film thickness before exposure.

3. 发明专利

JPH05127371A PATTERN FORMATION 失效
公开(公告)号：JPH05127371A
公开(公告)日：1993-05-25
申请号：JP28756991
申请日：1991-11-01
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： SHIYUREEGERU REO , UENO TAKUMI , MORIUCHI NOBORU , SHIRAI SEIICHIRO , ONOZUKA TOSHIHIKO , HATTORI KOJI , UCHINO MASAICHI
IPC分类号： G03F7/008 , G03F7/022 , G03F7/023 , G03F7/26 , H01L21/027 , H01L21/30
摘要： PURPOSE:To form negative resist patterns of a high resolution by using an i-ray reduction stepper and to decrease the effect of standing waves. CONSTITUTION:A resist coating film consisting of an m,p-cresol novolak resin, 3,3'-dimethoxy-4,4'-diazide biphenyl, and naphthoquinone diazide sulfonate is exposed with patterns by light, such as i-ray (365nm) shorter in wavelength than 366nm and is then subjected to full-surface exposing by light, such as g-ray (436nm) of the wavelength longer than 400nm then to a baking treatment. The difference in the dissolution rate between the part exposed with the i-ray and the unexposed part increases to the difference larger than a resist which does not contain the naphthoquinone diazide sulfonate. The patterns of a high resolution are thus formed by using the reduction stepper of the short wavelength light, such as the i-ray.

4. 发明专利

JPH07239547A RESIST AND RESIST PATTERN FORMING METHOD 失效
公开(公告)号：JPH07239547A
公开(公告)日：1995-09-12
申请号：JP7686994
申请日：1994-04-15
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UCHINO MASAICHI , UTAKA SONOKO , UENO TAKUMI , ONOZUKA TOSHIHIKO , SHIRAI SEIICHIRO , MORIUCHI NOBORU , SASAKI MAMORU , HASHIMOTO MICHIAKI , HAYASHI NOBUAKI , KOJIMA KYOKO , MURAI FUMIO , TANAKA TOSHIHIKO , YAMAMOTO JIRO
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain a resist developable with an aq. alkali soln., having superior sensitivity to UV, electron beams, X-rays or other radiation and also having high resolution and to provide a pattern forming method using the resist. CONSTITUTION:This resist contains a water repellent compd. having a functional group whose water repellency is lost by a nucleophilic substitution reaction with alkali or having two or more functional groups whose water repellency is lost by a reaction with alkali in one molecule and a permeability variable compsn. varying its permeability to an aq. alkali soln. by irradiation or irradiation and subsequent heat treatment. When this resist is used, a fine pattern necessary for the production of a semiconductor device, an optical disk, a magnetic head, a magnetic bubble device, etc., is efficiently formed at a low cost.

5. 发明专利

JPH0845820A ALIGNMENT ACCURACY INSPECTION METHOD 失效
公开(公告)号：JPH0845820A
公开(公告)日：1996-02-16
申请号：JP17798794
申请日：1994-07-29
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HATTORI KOJI , TANAKA TOSHIHIKO , IMAI AKIRA , YAMAMOTO JIRO , UENO TAKUMI , ONOZUKA TOSHIHIKO , MORIUCHI NOBORU , SHIRAI SEIICHIRO
IPC分类号： G03F9/00 , H01L21/027 , H01L21/66
摘要： PURPOSE:To inspect the accuracy of alignment without developing a radiation sensitive composition film which is exposed to light by using the change of a film thickness of the radiation sensitive composition due to exposure and measuring the intensity distribution of reflected light of an exposed part and unexposed part adjacent thereto to measure the alignment accuracy of a mask. CONSTITUTION:A region including a backing thin film pattern is exposed to such light that a radiation sensitive composition film 3 hardly brings about the change of a film thickness. The intensity of reflected light is obtained from the function of position on a substrate. Thereby, the intensity distribution of reflected light is obtained. A relative position between the exposure region 5, the film thickness of which is changed, and a backing thin film pattern 2 can be obtained.

6. 发明专利

JPH08286384A PATTERN FORMATION METHOD AND PHOTORESIST MATERIAL FOR IT 失效
公开(公告)号：JPH08286384A
公开(公告)日：1996-11-01
申请号：JP8902995
申请日：1995-04-14
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HATTORI KOJI , HATTORI KEIKO , UCHINO MASAICHI , UENO TAKUMI , TSUTSUI KEN , FUKUMOTO YOSHIKO , ONOZUKA TOSHIHIKO , MORIUCHI NOBORU , SHIRAI SEIICHIRO
IPC分类号： G03F7/095 , G03F7/26 , H01L21/027
摘要： PURPOSE: To provide a pattern formation method by which a pattern is formed at one exposure and development, and a radiation sensitive composition used for it by reducing dimensional fluctuation and deformation of a pattern caused by interference action and irregular reflection due to reflection light from a substrate in the case of forming a fine pattern by lithography technology. CONSTITUTION: After the second photoresist film 3 whose absorbency in an exposure wavelength is smaller and sensitivity is lower than the first photoresist film is formed on the first photoresist film 2, an exposure development is performed. Largeness of the absorbency of the first resist film 2 reduces the reflection light from the substrate 1 and the sensitivity of the first resist film 2 is higher than that of the resist film 3 so that the pattern size of the first photoresist 2 can be reduced to less than the pattern size of the second photoresist 2 so that the dimensional fluctuation and deformation of the pattern can be reduced.

7. 发明专利

JP2013083759A Phase shift mask, method for forming asymmetric pattern, method for manufacturing diffraction grating, and method for manufacturing semiconductor device 有权
$Phase shift mask, method for forming asymmetric pattern, method for manufacturing diffraction grating, and method for manufacturing semiconductor device$
标题翻译：相位移掩模，形成非对称图案的方法，制造衍射光栅的方法和制造半导体器件的方法
公开(公告)号：JP2013083759A
公开(公告)日：2013-05-09
申请号：JP2011222907
申请日：2011-10-07
申请人： Hitachi Ltd , 株式会社日立製作所 , Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TSUNODA KAZUYUKI , ONOZUKA TOSHIHIKO , MATSUI SHIGERU , EHATA YOSHISADA , HASEGAWA NORIO
IPC分类号： G03F1/68 , G03F7/20
CPC分类号： H01L21/3065 , G03F1/0046 , G03F1/26 , G03F1/28 , G03F1/30 , H01L21/3085
摘要： PROBLEM TO BE SOLVED: To provide a technique of forming an asymmetric pattern using a phase shift mask, the technology capable of achieving improvement in the accuracy of products and reduction of a production time, and to provide a technique of manufacturing a diffraction grating and a semiconductor device.SOLUTION: In the method for manufacturing a diffraction grating using a phase shift mask 30 (in which a light-shielding part and a transmissive part (comprising a first transmissive part giving no phase shift and a second transmissive part giving a phase shift) are periodically arranged), the light radiating from an illumination light source 10 is made to transmit through the phase shift mask 30; a 0-order beam and a +1-order beam generated by the transmission through the phase shift mask 30 are made to interfere with each other on the surface of a Si wafer 50 to expose a photoresist 60 on the surface of the Si wafer 50; thereby a diffraction grating having a blazed cross-sectional shape is formed on the Si wafer 50.
摘要翻译：要解决的问题：为了提供使用相移掩模形成不对称图案的技术，可以实现产品精度提高和生产时间缩短的技术，并且提供制造衍射的技术光栅和半导体器件。解决方案：在使用相移掩模30（其中遮光部分和透射部分（包括不具有相移的第一透射部分和给出相移的第二透射部分）的衍射光栅的制造方法中）周期性地布置），使从照明光源10发出的光透过相移掩模30; 使通过相移掩模30的透射产生的0级光束和+ 1级光束在Si晶片50的表面上彼此干涉，以暴露Si晶片50的表面上的光致抗蚀剂60 ; 从而在Si晶圆50上形成具有闪耀截面形状的衍射光栅。（C）2013，JPO＆INPIT

8. 发明专利

JP2009290240A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2009290240A
公开(公告)日：2009-12-10
申请号：JP2009207688
申请日：2009-09-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NOGUCHI JUNJI , MATSUMOTO TAKASHI , OSHIMA TAKAFUMI , ONOZUKA TOSHIHIKO
IPC分类号： H01L21/768 , H01L21/3205 , H01L23/52 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To efficiently attain capacity reduction and securement of a via processing margin. SOLUTION: This semiconductor device having a plurality of wiring layers has: a first wiring layer 26 having a predetermined region; a second wiring layer 47 located in an upper layer of the first wiring layer; an interlayer insulating film 36 provided between the first wiring layer and the second wiring layer; and barrier insulating films (29, 31) provided between the interlayer insulating film and wiring of the first wiring layer, wherein thickness of the barrier insulating film at an upper part of the wiring in the predetermined region is thicker than the barrier insulating film at an upper part of wiring in regions except the predetermined region, an air gap 35 is formed between the adjacent wirings in the predetermined region, and the air gap is not formed between the adjacent wirings in the regions except the predetermined region. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：有效地实现容量降低和通孔加工余量的确定。解决方案：具有多个布线层的该半导体器件具有：具有预定区域的第一布线层26; 位于第一布线层的上层的第二布线层47; 设置在第一布线层和第二布线层之间的层间绝缘膜36; 以及设置在所述层间绝缘膜和所述第一布线层的布线之间的阻挡绝缘膜（29,31），其中，所述预定区域中的所述布线的上部的所述阻挡绝缘膜的厚度比所述阻挡绝缘膜厚在预定区域以外的区域中布线的上部，在预定区域中的相邻布线之间形成气隙35，并且在除了预定区域之外的区域中的相邻布线之间不形成气隙。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JPH09115806A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH09115806A
公开(公告)日：1997-05-02
申请号：JP26977195
申请日：1995-10-18
申请人： HITACHI LTD
发明人： FUKUMOTO YOSHIKO , ONOZUKA TOSHIHIKO
IPC分类号： G03F7/26 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent a part of an exposure light from being reflected on the interface between an upper photoresist layer and a lower photoresist layer (anti-reflective layer) in forming a resist pattern using a multilayer resist method. SOLUTION: Between a lower photoresist layer (anti-reflective layer) 4 containing a light absorbing agent and an upper photoresist layer 6 containing no light absorbing agent, a photoresist layer 5 containing a light absorbing agent at a density substantially intermediate between the densities in the layers 4 and 6 is provided so that a moderate gradient of density of the light absorbing agent in the entire photoresists (4, 5 and 6) is realized. Thus, an exposure light is prevented from being easily reflected on the interface between the photoresist layers.

10. 发明专利

JPH06310392A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH06310392A
公开(公告)日：1994-11-04
申请号：JP9419293
申请日：1993-04-21
申请人： HITACHI LTD
发明人： MORIUCHI NOBORU , SHIRAI SEIICHIRO , ONOZUKA TOSHIHIKO
IPC分类号： G03F9/00 , H01L21/027
摘要： PURPOSE:To enable a photomask and a semiconductor wafer to be aligned with each other high in accuracy by a method wherein an alignment mark is enhanced in detection accuracy. CONSTITUTION:Alignment marks 32 are provided in a region which fringes a photoresist on the periphery of a semiconductor, so that no photoresist is present on the alignment mark 32 when the position of the alignment mark 32 is detected in a light exposure process.

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