专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH09205057A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09205057A
公开(公告)日：1997-08-05
申请号：JP1066896
申请日：1996-01-25
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HATTORI KEIKO , HATTORI KOJI , SHIRAISHI HIROSHI , TSUTSUI KEN , FUKUMOTO YOSHIKO , ONOZUKA TOSHIHIKO , SHIRAI SEIICHIRO
IPC分类号： G03F7/11 , G03F7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To perform collective exposure and development by providing an interlayer separation film of specified material exhibiting photosensitivity similar to that of first and second photoresists between first and second photoresist layers thereby forming a multilayer structure while suppressing the mixing. SOLUTION: A first positive or negative photoresist layer is formed on a semiconductor substrate and a second photoresist layer of the same type is formed thereon. The plurality of photoresist layers are subjected to the same exposing/developing step to form a resist pattern. In this regard, an interlayer separation film having the same photosensitivity as that of first and second photoresists is provided between first and second photoresist layers. The interlayer separation film is formed of a material insoluble to the solvent of second photoresist using a solvent insoluble to the first photoresist layer.

2. 发明专利

JPH08286384A PATTERN FORMATION METHOD AND PHOTORESIST MATERIAL FOR IT 失效
公开(公告)号：JPH08286384A
公开(公告)日：1996-11-01
申请号：JP8902995
申请日：1995-04-14
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HATTORI KOJI , HATTORI KEIKO , UCHINO MASAICHI , UENO TAKUMI , TSUTSUI KEN , FUKUMOTO YOSHIKO , ONOZUKA TOSHIHIKO , MORIUCHI NOBORU , SHIRAI SEIICHIRO
IPC分类号： G03F7/095 , G03F7/26 , H01L21/027
摘要： PURPOSE: To provide a pattern formation method by which a pattern is formed at one exposure and development, and a radiation sensitive composition used for it by reducing dimensional fluctuation and deformation of a pattern caused by interference action and irregular reflection due to reflection light from a substrate in the case of forming a fine pattern by lithography technology. CONSTITUTION: After the second photoresist film 3 whose absorbency in an exposure wavelength is smaller and sensitivity is lower than the first photoresist film is formed on the first photoresist film 2, an exposure development is performed. Largeness of the absorbency of the first resist film 2 reduces the reflection light from the substrate 1 and the sensitivity of the first resist film 2 is higher than that of the resist film 3 so that the pattern size of the first photoresist 2 can be reduced to less than the pattern size of the second photoresist 2 so that the dimensional fluctuation and deformation of the pattern can be reduced.

3. 发明专利

JP2001267610A SOLAR BATTERY 失效
公开(公告)号：JP2001267610A
公开(公告)日：2001-09-28
申请号：JP2000081707
申请日：2000-03-17
申请人： HITACHI LTD
发明人： OTSUKA HIROYUKI , TSUTSUI KEN , UEMATSU TSUYOSHI , YAZAWA YOSHIAKI
IPC分类号： H01L31/04
摘要： PROBLEM TO BE SOLVED: To avoid light deterioration and further increase the amount of generation to the light reception characteristics of the reverse side of a reverse side contact type single-crystal silicon solar battery or a double-sided light reception type solar battery. SOLUTION: Either substrate 1 out of a P-type semiconductor substrate where the main dopant is aluminum, gallium, or indium or an MCZ-P type semiconductor substrate where the oxygen content ratio is equal to or less than 10 ppm, an N-type layer 2 that is at least at one region of the first main surface of the substrate, a first electrode 5 that is subjected to ohmic junction to one portion or a plurality of positions of the N-type layer and does not cover the entire, first main surface, and a second electrode 6 that does not cover the entire main surface that is subjected to ohmic junction to at least one region out of regions other than the N-type layer, are arranged at the solar battery, thus not only completely extinguishing light deterioration remarkably appearing in structure but also indicating higher conversion efficiency than a normal boron-doped CZ substrate with the same specific resistance.

4. 发明专利

JP2001119055A LIGHT-CONDENSING TYPE PHOTOVOLTAIC POWER GENERATING DEVICE 失效
公开(公告)号：JP2001119055A
公开(公告)日：2001-04-27
申请号：JP29352799
申请日：1999-10-15
申请人： HITACHI LTD
发明人： OTSUKA HIROYUKI , UEMATSU TSUYOSHI , YAZAWA YOSHIAKI , TSUTSUI KEN , MIYAMURA YOSHINORI , MURAMATSU SHINICHI , MINEMURA JIYUNKO
IPC分类号： H01L31/042 , G02B17/08 , G02B27/00
摘要： PROBLEM TO BE SOLVED: To provide a light-condensing type photovoltaic power generating device, whose reflectance at the interface between a light condensing device and photovoltaic device is reduced and whose optical efficiency and power generation are substantially increased. SOLUTION: This light-condensing type photovoltaic power generating device has a light-condensing device, which has a light receiving surface and a reflective surface and in which a space sandwiched between the light receiving surface and the reflective surface is filled with a medium having a refractive index higher than that outside of the light receiving surface and a photovoltaic device, at least part of which surface is brought into contact with the light condensing device. The refractive index of at least a region, brought into contact with the photovoltaic device in the medium, is higher than those of other in the medium. Furthermore, the refractive index in a region brought into contact with the light receiving surface in the medium is the lowest in the medium, and the refractive index of a region brought into contact with the photovoltaic crevice in the medium is the highest in the medium.

5. 发明专利

JP2000223731A LIGHT COLLECTION TYPE PHOTOVOLTAIC POWER GENERATION DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JP2000223731A
公开(公告)日：2000-08-11
申请号：JP2612699
申请日：1999-02-03
申请人： HITACHI LTD
发明人： MIYAMURA YOSHINORI , UEMATSU TSUYOSHI , KETSUSAKO MITSUNORI , YAZAWA YOSHIAKI , MURAMATSU SHINICHI , TSUTSUI KEN , OTSUKA HIROYUKI , MINEMURA JIYUNKO
IPC分类号： H01L31/052 , F24S23/00
摘要： PROBLEM TO BE SOLVED: To provide a light collection type photovoltaic power generation device for reducing costs. SOLUTION: This light collection type photovoltaic power generation device is composed of a plurality of light collecting bodies 22 having light receiving faces and reflecting faces and a plurality of solar battery cells 31 at least, one part of which surfaces are brought into contact with the other face except the light receiving face or reflecting face of each light collecting body. The light collecting body is composed of bridged and hardened thermal melting bridge type resin. The plural light collecting bodies has light trasmissivity which is 80% or more, and the thermal melting bridge type resin is ethylene acetic acid vinyl copolymer.

6. 发明专利

JP2000101124A CONVERGING PHOTOVOLTAIC POWER GENERATION MODULE, ITS MANUFACTURE AND CONVERGING PHOTOVOLTAIC POWER GENERATION SYSTEM 失效
公开(公告)号：JP2000101124A
公开(公告)日：2000-04-07
申请号：JP26428298
申请日：1998-09-18
申请人： HITACHI LTD
发明人： UEMATSU TSUYOSHI , KETSUSAKO MITSUNORI , YAZAWA YOSHIAKI , MIYAMURA YOSHINORI , TSUTSUI KEN , MURAMATSU SHINICHI , OTSUKA HIROYUKI , MINEMURA JIYUNKO
IPC分类号： H01L31/052 , H01L25/00 , H01L31/042 , H01L31/048 , H02S30/20
摘要： PROBLEM TO BE SOLVED: To improve a light collating rate and a convergence magnification, even if the light reception area of a photovoltaic power generation element is small. SOLUTION: When a module light reception face 2 of a converged photovoltaic power generation module is arranged on an upper side and a plurality of photovoltaic power generation elements 4-1 and 4-2 on a lower side, a light reflection face 5 is constituted, in such a way that more than one slope where a cross section form in a direction connecting two photovoltaic power generation elements 4-1 and 4-2 incline right upward or left upward is given between the two adjacent photovoltaic power generation elements 4-1 and 4-2, more than one slope 66 rising rightward exists on the right side of the intermediate point 67 of the two adjacent photovoltaic power generation elements and more than one slope 65 rising leftward exists on the left side of the intermediate point 67.

7. 发明专利

JPH11238900A FOCUSING PHOTOVOLTAIC POWER GENERATION DEVICE 失效
公开(公告)号：JPH11238900A
公开(公告)日：1999-08-31
申请号：JP3854998
申请日：1998-02-20
申请人： HITACHI LTD
发明人： UEMATSU TSUYOSHI , KETSUSAKO MITSUNORI , YAZAWA YOSHIAKI , MURAMATSU SHINICHI , TSUTSUI KEN , OTSUKA HIROYUKI , MIYAMURA YOSHINORI
IPC分类号： H01L31/052
摘要： PROBLEM TO BE SOLVED: To reduce or prevent reduction in output power due to temperature rise in a photoelectric conversion device arising from heating, in a focusing photovoltaic power generation device caused by a ray of light incident on the focusing photovoltaic power generation device. SOLUTION: A focusing photovoltaic power generation device is provided with a photoelectric conversion device 3, so placed that at least part of the device is positioned within a space encircled with a light receiving plane 1 and a reflecting plane 2, and with a medium filled in the space. The focusing photovoltaic power generation device is provided with such structure that the shortest distance 7 between any point on the part of the photoelectric conversion device 3 located in the space and the light receiving plane 1 is not more than k×20÷600÷2(m), where k is the thermal conductivity of the medium (in W/m. deg.C).

8. 发明专利

JPH11167128A PRODUCTION OF LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH11167128A
公开(公告)日：1999-06-22
申请号：JP26427998
申请日：1998-09-18
申请人： HITACHI LTD
发明人： TANAKA YASUO , TSUKADA TOSHIHISA , KANEKO YOSHIYUKI , YAMAMOTO HIDEAKI , MATSUMARU HARUO , TSUTSUI KEN
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To prevent the degradation in an aperture ratio without increasing the exclusive area rate of additive capacitors even if the additive capacitors are increased by using a material contg. an oxide of a metal consisting essentially of Ta as a dielectric film of the superposed parts constituting the additive capacitors. SOLUTION: An SiO2 ground surface film 20 for protection of a translucent glass substrate 14 is formed on this glass substrate. Next, the metal Ta is deposited and is etched to form desired gate wiring patterns 22, 23. The difference in level at the ends of the Ta patterns is provided with a taper. The Ta gate wiring patterns 22, 23 are anodically oxidized to form an anodically oxidized Ta film 24. Next, an SiN gate insulating film 21, an a-SiH(i) film 8 and an SiN channel protective film 25 are continuously deposited and is etched, by which island-shaped patterns of the SiN channel protective film 25 are formed. Next, the island-shaped patterns of a-Si:H(n-) 15 and a-Si: H(i) 8 are formed. Signal line patterns 1 and source electrode patterns 5 are formed. Finally, a protective film 12 is formed.

9. 发明专利

JPH113891A METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH113891A
公开(公告)日：1999-01-06
申请号：JP15473997
申请日：1997-06-12
申请人： HITACHI LTD
发明人： TSUTSUI KEN , KETSUSAKO MITSUNORI , UEMATSU TSUYOSHI , MURAMATSU SHINICHI , OTSUKA HIROYUKI , NAGATA YASUSHI
IPC分类号： G03F7/095 , G03F7/26 , H01L21/3205 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To form a good overhang, by a method wherein, as a resin forming reverse patterns to desired patterns on a substrate, a sensitive base film and a sensitive top film are formed in order from a substrate face side, and further an intermediate layer is inserted therebetween. SOLUTION: By use of ethyl cellosolve acetate(ECA) as a solvent, a sensitive resin is applied on a cleaned substrate 10, a prebake is performed, and a base film 2 is formed. Next, polyvinyl alcohol(PVA) is dissolved by pure water and this is applied on the base film 2, and a prebake is performed to form an intermediate layer 3. Next, a sensitive resin in which the ECA having smaller solubility than the base film 2 is used as a solvent which is an alkali solution is applied on the intermediate layer 3, and a prebake is performed and a top film 4 is formed.

10. 发明专利

JPH10229211A PHOTOELECTRIC CONVERSION DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JPH10229211A
公开(公告)日：1998-08-25
申请号：JP3356597
申请日：1997-02-18
申请人： HITACHI LTD
发明人： UEMATSU TSUYOSHI , MURAMATSU SHINICHI , KETSUSAKO MITSUNORI , TSUTSUI KEN , OTSUKA HIROYUKI
IPC分类号： H01L31/04
摘要： PROBLEM TO BE SOLVED: To reduce the element area for improving the photoelectric conversion efficiency, by a method wherein the substrate part end of a photoelectric conversion element is covered with a passivation film made of a dielectric in contact with the end. SOLUTION: A first semiconductor layer 2 in the reverse conductivity type to that of a substrate 1 is formed on the substrate 1, and then a second semiconductor layers 3 in the same conductivity type as that of the substrate 1 are formed on the back of the substrate 1. Next, in order to take out exceeding one each of photoelectric conversion element chips, a photoelectric conversion element chip substrate 14 is separated by using a laser cutter, etc., along a separating surface 10 of a unit element region 12. Next, a passivation film 4 made of a dielectric film is formed on an exposed end 7 of the chip substrate 14 of the separated photoelectric conversion element chip so as to arrange a surface electrode 5 and a back electrode 6. Through these procedures, the element area can be decreased, thereby enabling the photoelectric conversion efficiency to be improved.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式