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1. 发明授权

EP3476032B1 BIPOLAR DC-DC CONVERTER TOPOLOGY USING PASSIVE VOLTAGE REVERSAL 有权转让
公开(公告)号：EP3476032B1
公开(公告)日：2021-08-04
申请号：EP17821022.5
申请日：2017-06-26
发明人： RAYMOND, Luke, C. , LIANG, Wei , SURAKITBOVORN, Kawin , RIVAS DAVILA, Juan, M.
IPC分类号： H02M1/08 , H02M1/00 , H02M3/00 , H02M7/49 , H03K17/60 , H03K17/66

2. 发明授权

EP2852058B1 Vorrichtung zum Aktivieren eines elektronischen Gerätes, insbesondere eines Steuergerätes in einem Fahrzeug 有权
公开(公告)号：EP2852058B1
公开(公告)日：2018-06-13
申请号：EP14184522.2
申请日：2014-09-12
申请人： Continental Automotive GmbH
发明人： Ferger, Andreas , Sichert, Jochen
IPC分类号： H03K17/60 , G06F1/32
CPC分类号： H03K17/60 , G06F1/3203 , G06F1/3206 , H03K2217/0036

3. 发明公开

EP3232571A1 SOLID STATE RELAY 审中-公开
标题翻译：固态继电器
公开(公告)号：EP3232571A1
公开(公告)日：2017-10-18
申请号：EP16165447.0
申请日：2016-04-14
申请人： Nexperia B.V.
发明人： BERGLUND, Stefan , HABENICHT, Soenke , KONEJUNG, Michael Felix , STANGE, Joachim , BAE, Seong-Woo
IPC分类号： H03K17/60 , H03K17/0812 , H03K17/16
CPC分类号： H03K3/012 , H03K3/017 , H03K17/08126 , H03K17/16 , H03K17/602
摘要： The disclosure relates to solid state relay circuit for switching an electrical load. The solid state relay circuit may include a relay transistor; and a driver circuit comprising a constant current source. The driver circuit is configured and arranged to switchably operate the relay transistor, and the relay transistor is configured and arranged to switchably operate the electrical load.
摘要翻译：本公开涉及用于切换电负载的固态继电器电路。固态继电器电路可以包括中继晶体管; 以及包括恒流源的驱动器电路。驱动器电路被配置和布置为可切换地操作中继晶体管，并且中继晶体管被配置和布置为可切换地操作电负载。

4. 发明公开

EP3139480A3 POWER CONVERSION DEVICE AND DRIVE DEVICE 审中-公开
标题翻译：电力转换装置和驱动装置
公开(公告)号：EP3139480A3
公开(公告)日：2017-06-07
申请号：EP16178351.9
申请日：2016-07-07
申请人： Renesas Electronics Corporation
发明人： KONDO, Daisuke , TATENO, Koji , LIU, Chang , NAGATA, Nao
IPC分类号： H02M1/08 , H02M5/458 , H03K17/567 , H03K17/60
CPC分类号： H02M5/458 , H01L29/00 , H02M1/08 , H03K17/127 , H03K17/168 , H03K17/567 , H03K17/61 , H03K17/691 , H03K17/7955 , H03K2217/0081
摘要： To reduce the number of mounted components in the power conversion device and drive device.
Each high-side transistor and low-side transistor has an EGE-type structure of (emitter-gate-emitter type). A high-side driver includes a first pull-up transistor configured to apply a first positive voltage to a gate based on an emitter of the high-side transistor, and a first pull-down transistor configured to couple the gate to the emitter. A low-side driver includes a second pull-up transistor configured to apply a second positive voltage to the gate based on an emitter of the low-side transistor, and a second pull-down transistor configured to couple the gate to the emitter.
摘要翻译：减少功率转换设备和驱动设备中安装的组件数量。每个高侧晶体管和低侧晶体管具有EGE型结构（发射极 - 栅极 - 发射极型）。高侧驱动器包括被配置为基于高侧晶体管的发射极向栅极施加第一正电压的第一上拉晶体管以及被配置为将栅极耦合到发射极的第一下拉晶体管。低侧驱动器包括被配置为基于低侧晶体管的发射极向栅极施加第二正电压的第二上拉晶体管以及被配置为将栅极耦合到发射极的第二下拉晶体管。

5. 发明授权

EP1826903B1 SWITCHING CIRCUIT WHICH IS USED TO OBTAIN A DOUBLED DYNAMIC RANGE 无效转让
标题翻译：交换网络得到一个一倍动态范围
公开(公告)号：EP1826903B1
公开(公告)日：2012-12-05
申请号：EP05813431.3
申请日：2005-10-26
申请人： Marvell Hispania S.L.
发明人： BLASCO CLARET, Jorge Vicente , CAMPS SORIANO, José Luis , GONZÁLEZ MORENO, José Luis , ANDRES NAVARRO, Francisco José
IPC分类号： H03K17/10 , H03K17/60 , H03K17/687
CPC分类号： H03K17/56 , H03K17/10
摘要： The circuit switching the signals with peak value equal to supply voltage, or twice the supply level, has transistor (17) connected to signal source (10) and load (19) through capacitors (11,18), resistors (15,16) and inductors (12). The complementary control voltages (13,14) are applied to control the cut-off and conduction states of switch circuit.

6. 发明公开

EP1826903A4 SWITCHING CIRCUIT WHICH IS USED TO OBTAIN A DOUBLED DYNAMIC RANGE 无效转让
标题翻译：交换网络得到一个一倍动态范围
公开(公告)号：EP1826903A4
公开(公告)日：2011-05-04
申请号：EP05813431
申请日：2005-10-26
申请人： MARVELL HISPANIA S L
发明人： BLASCO CLARET JORGE VICENTE , CAMPS SORIANO JOSE LUIS , GONZALEZ MORENO JOSE LUIS , ANDRES NAVARRO FRANCISCO JOSE
IPC分类号： H03K17/10 , H03K17/60 , H03K17/687
CPC分类号： H03K17/56 , H03K17/10
摘要： The circuit switching the signals with peak value equal to supply voltage, or twice the supply level, has transistor (17) connected to signal source (10) and load (19) through capacitors (11,18), resistors (15,16) and inductors (12). The complementary control voltages (13,14) are applied to control the cut-off and conduction states of switch circuit.

7. 发明授权

EP1451890B1 SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS 有权
标题翻译：交换网络和方法，用于切换高频信号
公开(公告)号：EP1451890B1
公开(公告)日：2011-02-02
申请号：EP02800982.7
申请日：2002-10-10
申请人： PEREGRINE SEMICONDUCTOR CORPORATION
发明人： BURGENER, Mark, L. , CABLE, James, S.
IPC分类号： H01P1/15 , H03K17/60
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

8. 发明公开

EP1833166A8 HIGH-FREQUENCY ELECTRONIC SWITCH, BUST WAVE GENERATION DEVICE USING THE SAME, AND SHORT PULSE RADAR USING THE SAME 审中-公开
标题翻译：电子用高频率切换，胸围波发生装置与短脉冲雷达SO
公开(公告)号：EP1833166A8
公开(公告)日：2007-12-19
申请号：EP05806096.3
申请日：2005-11-14
申请人： Anritsu Corporation , MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： SAITO, Sumio
IPC分类号： H03K17/60 , G01S7/282
CPC分类号： H03F3/217 , G01S7/282 , G01S13/0209 , H03F3/24 , H03F3/72 , H03F2200/294 , H03F2200/372 , H04B1/7174
摘要： A high-frequency electronic switch includes a signal input terminal to which a high-frequency signal to be switched is input, a plurality of amplifying circuits with transistors, to respectively amplify the high-frequency signal to be switched sequentially, the amplifying circuits being cascade-connected in a plurality of stages to the signal input terminal, a signal output terminal which is connected to an output section of an amplifying circuit, at final stage among the plurality of amplifying circuits, and which outputs the high-frequency signal to be switched sequentially amplified, a control terminal to which a pulse signal serving as a switching signal having a period of a first level and a period of a second level is input, and a supply current control circuit which makes the plurality of amplifying circuits be in an amplification-operational state by supplying operational current to each of the transistors of the plurality of amplifying circuits in a period when the pulse signal input to the control terminal is at the first level, and which makes the plurality of amplifying circuits be in a non-amplification-operational state by stopping supplying operational current to each of the transistors of the plurality of amplifying circuits in a period when the pulse signal is at the second level. The high-frequency electronic switch effectively suppresses leakage of high-frequency signal at the time of off-state by turning on/off between the signal input terminal and the signal output terminal so as to be able to be isolated substantially high-frequency likewise in accordance with a level of the pulse signal input to the control terminal.

9. 发明授权

EP1143619B1 Semiconductor switch driving circuit 有权
标题翻译：半导体控制电路
公开(公告)号：EP1143619B1
公开(公告)日：2005-07-27
申请号：EP01107205.5
申请日：2001-03-22
申请人： Nihon Kohden Corporation
发明人： Akiyama, Naoto , Inomata, Masahiko , Tsumura, Ikuhiro
IPC分类号： H03K17/691 , H03K17/60 , H03K17/61 , H03K17/62 , H03K17/687 , H03K17/725 , H03K17/04 , H03K17/10 , H03K17/785
CPC分类号： H03K17/0406 , H03K17/107 , H03K17/691 , H03K17/785

10. 发明公开

EP1451890A4 SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS 有权
标题翻译： SCHALTNETZWERK UND VERFAHREN ZUM SCHALTEN VON HOCHFREQUENZSIGNALEN
公开(公告)号：EP1451890A4
公开(公告)日：2004-11-17
申请号：EP02800982
申请日：2002-10-10
申请人： PEREGRINE SEMICONDUCTOR CORP
发明人： BURGENER MARK L , CABLE JAMES S
IPC分类号： H01L21/822 , H01L27/04 , H01P1/15 , H03K17/06 , H03K17/693 , H03K17/60
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
摘要翻译： RF开关电路（20）以绝缘体上硅“SOI”技术制造。 RF开关电路（20）包括用于交替地将RF输入信号（RF1，RF2）耦合到公共RF节点（35）的成对的开关和分流晶体管组（33,34,37,38）。开关和分流晶体管组（33,34,37,38）包括以“堆叠”或串联配置连接在一起的一个或多个MSFET晶体管。晶体管组（33,34），相关栅极电阻的堆叠增加了串联连接的开关晶体管两端的击穿电压，并用于改善RF开关压缩。描述了完全集成的RF开关，其包括与RF开关元件（30）集成在一起的数字控制逻辑（110）和负电压发生器（120）。在一个实施例中，完全集成的RF开关包括内置振荡器（202），电荷泵电路（206），电平移位分压器电路（500）和RF缓冲器电路（400）。本发明的RF开关（20）提供了插入损耗，开关隔离和开关压缩的改进。

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