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1. 发明公开

EP3123522A4 MULTIPLEXOR LOGIC FUNCTIONS IMPLEMENTED WITH CIRCUITS HAVING TUNNELING FIELD EFFECT TRANSISTORS (TFETS) 审中-公开
公开(公告)号：EP3123522A4
公开(公告)日：2017-11-22
申请号：EP14886843
申请日：2014-03-27
申请人： INTEL CORP
发明人： MORRIS DANIEL H , AVCI UYGAR E , RIOS RAFAEL , YOUNG IAN A
IPC分类号： H01L29/88 , H01L21/336 , H01L29/739 , H01L29/78 , H03K17/693 , H03K19/094 , H03K19/0948
CPC分类号： H03K17/693 , G11C5/066 , H01L27/092 , H01L29/7391 , H01L29/775 , H03K19/094 , H03K19/0948
摘要： Multiplexor circuits with Tunneling field effect transistors (TFET) devices are described. For example, a multiplexor circuit includes a first set of tunneling field effect transistor (TFET) devices that are coupled to each other. The first set of TFET devices receive a first data input signal, a first select signal, and a second select signal. A second set of TFET devices are coupled to each other and receive a second data input signal, the first select signal, and the second select signal. An output terminal is coupled to the first and second set of TFETs. The output terminal generates an output signal of the multiplexor circuit.

2. 发明公开

EP3104528A1 BIDIREKTIONALER MOSFET-SCHALTER UND MULTIPLEXER 有权
公开(公告)号：EP3104528A1
公开(公告)日：2016-12-14
申请号：EP16173464.5
申请日：2016-06-08
申请人： WEETECH GmbH
发明人： Hengl, Rudi , Reuter, Christian
IPC分类号： H03K17/693 , H03K17/689 , H03K17/687 , H03K17/0412
CPC分类号： H03K17/693 , H03K17/04123 , H03K17/6874 , H03K17/6877 , H03K17/689 , H03K2017/6875 , H03K2217/0054
摘要： Die Erfindung betrifft einen bidirektionalen MOSFET-Schalter, aufweisend einen Eingang (A) und einen Ausgang (B) und zwei MOSFET-Transistoren (T1, T2), die mit ihren Source- und Gate-Anschlüssen miteinander verbunden sind, wobei der Eingang (A) und der Ausgang (B) mit jeweils einem Drain-Anschluss der zwei MOSFET-Transistoren (T1, T2) verbunden ist, einen mittels einer Potentialtrennung (I1) galvanisch isolierten Steuereingang (D), der mit einer Steuereinheit (C1) verbunden ist, welche eingerichtet ist, über einen weiteren MOSFET-Transistor (T4) einen Steuerstrom für einen FET-Transistor (T3) zu schalten, der eingerichtet ist, durch den Steuerstrom eine Gate-Spannung Vgs zwischen Gate (G) und Source (S) an den zwei MOSFET-Transistoren (T1, T2) zum Schalten derselben zu erzeugen, und einer potentialfreien Spannungsquelle (V1), welche mit dem Eingang (A) galvanisch verbunden ist und eingerichtet ist, einen Gate-Steuerstrom für die zwei MOSFET-Transistoren (T1, T2) zu erzeugen.
摘要翻译：提供双向MOSFET开关。该开关包括通过其源极和栅极端子彼此连接的输入端子，输出端子和两个MOSFET晶体管。输入和输出端子连接到两个MOSFET晶体管的相应漏极端子。该开关还包括控制输入端子，其由电势隔离器电隔离并连接到控制单元，该控制单元经配置以通过另一MOSFET晶体管切换FET晶体管的控制电流。 FET晶体管被配置为通过控制电流产生用于切换两个MOSFET晶体管的栅极和源极之间的栅极电压Vgs，以及浮动电压源，其被电连接到输入并被配置以产生两个MOSFET晶体管的栅极控制电流。

3. 发明公开

EP3082260A2 SWITCH CONTROL CIRCUIT 审中-公开
标题翻译：开关控制电路
公开(公告)号：EP3082260A2
公开(公告)日：2016-10-19
申请号：EP16159758.8
申请日：2016-03-11
申请人： Panasonic Corporation
发明人： MORISHITA, Yohei
IPC分类号： H03K17/687 , H03K17/00 , H03K17/693
CPC分类号： H03K5/1506 , H03H19/004 , H03K5/1565 , H03K17/007 , H03K17/687 , H03K17/693
摘要： A switch control circuit (100) includes: a clock generating circuit (120) that generates one or more periodic signals (B1-B4) having a predetermined cycle; a clock adjusting circuit (130) that generates one or more control signals (S1-S4) by adjusting a bias voltage of the one or more periodic signals and changing an ON period of the one or more periodic signals; and at least one switching circuit including one or more switches (S1-S4) that are switched to ON if respective amplitudes of the generated one or more control signals (S1-S4) is equal to or higher than a threshold value and that are switched to OFF if the respective amplitudes of the generated one or more control signals is less than the threshold value.

4. 发明授权

EP2387094B1 Switch circuit and method of switching radio frequency signals 有权
标题翻译：切换网络和方法，用于切换高频信号
公开(公告)号：EP2387094B1
公开(公告)日：2016-05-04
申请号：EP10011669.8
申请日：2002-10-10
申请人： PEREGRINE SEMICONDUCTOR CORPORATION
发明人： Burgener, Mark L. , Cable, James, S.
IPC分类号： H01P1/15 , H03K17/60
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

5. 发明公开

EP2945287A1 SWITCH, ANTENNA TUNER, AND RADIO FREQUENCY APPARATUS 有权
标题翻译：天TER。。。。。。。。。。。。。。
公开(公告)号：EP2945287A1
公开(公告)日：2015-11-18
申请号：EP15166843.1
申请日：2015-05-07
申请人： Huawei Technologies Co., Ltd.
发明人： YU, Yongchang , LIU, Tao , LI, Weinan
IPC分类号： H03K17/10 , H03K17/693
CPC分类号： H03J5/14 , H03J2200/06 , H03K17/10 , H03K17/102 , H03K17/60 , H03K17/687 , H03K17/693 , H03K2217/0018 , H03K2217/0054 , H04B1/04 , H04W88/00
摘要： A switch, an antenna tuner, and a radio frequency apparatus are provided. The switch includes: 2N successively serially connected transistors. In the 2N successively serially connected transistors, control ends of any two transistors with closest odd sequence numbers are coupled to each other through a first resistor, and control ends of any two transistors with closest even sequence numbers are coupled to each other through a second resistor; a control end of an n-th transistor is coupled to a first control signal in a switch control signal, and a control end of an (n+1)-th transistor is coupled to the first control signal, where n is an integer that is greater than or equal to 1 and is less than or equal to 2N-1, N is an integer greater than or equal to 2, and the first control signal is used to control turn-on or turn-off of the switch.
摘要翻译：提供开关，天线调谐器和射频装置。该开关包括：2N个连续串联连接的晶体管。在2N个连续串联连接的晶体管中，具有最近奇数序列号的任何两个晶体管的控制端通过第一电阻器彼此耦合，并且具有最靠近偶数序列号的任何两个晶体管的控制端通过第二电阻器彼此耦合 ; 第n晶体管的控制端与开关控制信号中的第一控制信号耦合，并且第（n + 1）晶体管的控制端耦合到第一控制信号，其中n是大于或等于1并且小于或等于2N-1，N是大于或等于2的整数，并且第一控制信号用于控制开关的导通或关断。

6. 发明授权

EP1592132B1 Switch apparatus, switchable power amplification apparatus, and mobile communication terminal apparatus 有权
标题翻译：开关装置，连接负载增强设备和移动通信终端
公开(公告)号：EP1592132B1
公开(公告)日：2015-11-18
申请号：EP05250937.9
申请日：2005-02-18
申请人： Sony Corporation , Sony Mobile Communications Inc
发明人： Kobayashi, Tomoo , Kusunoki, Shigeo , Shimada, Masayuki
IPC分类号： H03K17/693 , H03K17/16 , H03F3/60 , H03F1/02 , H04B1/40 , H03G1/00
CPC分类号： H03K17/693 , H03F1/0277 , H03F1/56 , H03F3/19 , H03F3/211 , H03F3/245 , H03F3/72 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/451 , H03F2203/21136 , H03F2203/21175 , H03G1/0088 , H03K17/162
摘要： A switch apparatus of the invention comprises a first input terminal, a second input terminal to which a second input signal having a level lower than a level of the first input signal is supplied, a first switch block for outputting the first input signal supplied from the first input terminal through a plurality of switching elements, a second switch block for outputting the second input signal supplied from the second input terminal through a plurality of switching elements; and a control terminal to which a control signal is supplied wherein the control signal controls the first switch block when outputting the first input signal, and controls the second switch block when outputting the second input signal, wherein the first switch block is configured to have a smaller number of switching elements than that of the second switch block.

7. 发明授权

EP1451890B2 SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS 有权
标题翻译：交换网络和方法，用于切换高频信号
公开(公告)号：EP1451890B2
公开(公告)日：2015-09-23
申请号：EP02800982.7
申请日：2002-10-10
申请人： PEREGRINE SEMICONDUCTOR CORPORATION
发明人： BURGENER, Mark, L. , CABLE, James, S.
IPC分类号： H01P1/15 , H03K17/60
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

8. 发明公开

EP2832019A1 LOW VOLTAGE MULTI-STAGE INTERLEAVER SYSTEMS, APPARATUS AND METHODS 审中-公开
标题翻译：多级低电压INTERLEAVERSYSTEME，设备和方法
公开(公告)号：EP2832019A1
公开(公告)日：2015-02-04
申请号：EP13769513.6
申请日：2013-03-25
申请人： Semtech Corporation
发明人： VANDEL, Eric
IPC分类号： H04K1/10
CPC分类号： H03K17/007 , H03K17/693 , H03K2217/0054
摘要： Described herein is a low-voltage multi-stage interleaver. The interleaver includes at least a first interleaver stage and a second interleaver stage. The first interleaver stage is either blocked or operating in a saturation region. The first interleaver stage facilitates cancellation of DC current, including a biasing current, so that the second interleaver stage receives no DC current input. The second interleaver stage is either blocked or operating in a linear region to allow the second interleaver stage to act as a passive current switch.

9. 发明公开

EP2700958A4 SWITCH CIRCUIT, SELECTION CIRCUIT, AND VOLTAGE MEASUREMENT DEVICE 有权转让
标题翻译：电路，选择和电压测量装置
公开(公告)号：EP2700958A4
公开(公告)日：2014-12-17
申请号：EP12773728
申请日：2012-04-10
申请人： RENESAS ELECTRONICS CORP
发明人： MAKINO RYOSEI , HAYAKAWA HIROHIKO
IPC分类号： G01R19/00 , G01R31/36 , H03K17/687 , H03K17/693
CPC分类号： G01R31/3658 , G01R31/007 , G01R31/362 , H03K17/04 , H03K17/6871 , H03K17/693
摘要： Provided is a technique that contributes to the improvement of voltage measurement accuracy and uniform current consumption of a battery in a voltage measurement device. Switch circuits (SWP and SWN) include switch elements (MP1 and MP2 or MN1 and MN2) which are provided between an input terminal and an output terminal, and switch driving units (401 to 409) which are driven between a first power supply voltage (VCC or GND) and a second power supply voltage (GND or VCC), which are different from each other, with an input voltage interposed therebetween. The switch driving unit includes source follower circuits (401 and 404) having a drain side being connected to a first power supply terminal side that is supplied with the first power supply voltage, inputting a voltage based on the input voltage, and supplying a voltage generated in the output side to the switch element as a driving voltage for driving the switch element; and current control units (402 and 405) which open and close a current path between the output side of the source follower circuit and a second power supply terminal being supplied with the second power supply voltage, in response to a control signal (ENABLE).
摘要翻译：提供一种有助于提高电压测量装置中的电池的电压测量精度和均匀的电流消耗的技术。开关电路（SWP和SWN）包括设置在输入端子和输出端子之间的开关元件（MP1和MP2或MN1和MN2）和开关驱动单元（401至409），其在第一电源电压 VCC或GND）和彼此不同的第二电源电压（GND或VCC），其间插入有输入电压。开关驱动单元包括源极跟随器电路（401和404），漏极侧连接到被提供有第一电源电压的第一电源端子侧，基于输入电压输入电压，并且提供产生的电压在作为用于驱动开关元件的驱动电压的开关元件的输出侧; 以及电流控制单元（402和405），其响应于控制信号（ENABLE）来打开和关闭源极跟随器电路的输出侧和被提供有第二电源电压的第二电源端子之间的电流路径。

10. 发明公开

EP2793320A2 Cross talk mitigation 有权
标题翻译： AbschwächungvonÜbersprechen
公开(公告)号：EP2793320A2
公开(公告)日：2014-10-22
申请号：EP14157895.5
申请日：2014-03-05
申请人： NXP B.V.
发明人： Vemula, Madan , Caravella, James , Spehar, James
IPC分类号： H01R13/648
CPC分类号： H02H9/041 , H02H9/046 , H03K17/693 , H03K2017/066 , H03K2217/0018
摘要： Cross-talk is mitigated in a switching circuit. In accordance with one or more embodiments, an apparatus includes a multi-pin connector having signal-carrying electrodes that communicate with a device external to the apparatus, and respective field-effect switches that couple the signal-carrying electrodes to respective communication channels in the apparatus. The switches include a first field-effect semiconductor switch having a gate electrode adjacent a channel region that connects electrodes (e.g., source and drain regions) when a threshold switching voltage is applied to the gate, in which the electrodes are connected between one of the signal-carrying electrodes and a first channel coupled to an electrostatic discharge (ESD) circuit. A bias circuit mitigates cross-talk between the communication channels by biasing the channel region of the first field-effect semiconductor switch (in an off state) to boost the threshold switching voltage over a threshold discharge voltage of the ESD circuit.
摘要翻译：串扰在开关电路中得到缓解。根据一个或多个实施例，一种装置包括具有与设备外部的装置通信的信号承载电极的多针连接器以及将信号承载电极耦合到相应通信信道的相应的场效应开关仪器。这些开关包括第一场效应半导体开关，当阈值开关电压施加到栅极时，具有与电极（例如，源极和漏极区）连接的沟道区相邻的栅电极，其中电极连接在栅极之间信号承载电极和耦合到静电放电（ESD）电路的第一通道。偏置电路通过偏置第一场效应半导体开关的沟道区（处于断开状态）来缓解通信通道之间的串扰，以提高阈值开关电压超过ESD电路的阈值放电电压。

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