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1. 发明公开

EP4174956A1 A HIGH FREQUENCY SWITCH WITH FIELD EFFECT TRANSISTOR 无效
公开(公告)号：EP4174956A1
公开(公告)日：2023-05-03
申请号：EP22204597.3
申请日：2022-10-29
申请人： Instytut Wysokich Cisnien Polskiej Akademii Nauk , POLITECHNIKA WARSZAWSKA
发明人： Cywinski, Grzegorz , Rumiantcev, Sergei , Bajurko, Pawel , Yashchyshyn, Yevhen
IPC分类号： H01L29/778 , H01L29/41 , H01P1/15 , H01L29/423 , H01L29/20
摘要： A high frequency switch with a field effect transistor having a source (101) and drain (102) connected with a channel (103) having a first conductivity type covered with a gate having a gate electrode (105) and a gate insulator layer (104) between the gate electrode and the channel. The gate electrode has a second conductivity type opposite to the first conductivity type.

2. 发明公开

EP3931964A1 MONOLITHIC MULTI-I REGION DIODE SWITCHES 审中-实审
公开(公告)号：EP3931964A1
公开(公告)日：2022-01-05
申请号：EP20715584.7
申请日：2020-02-28
申请人： MACOM Technology Solutions Holdings, Inc.
发明人： BROGLE, James Joseph , BUKOWSKI, Joseph Gerard , BARTER, Margaret Mary , BOLES, Timothy Edward
IPC分类号： H03K17/76 , H01P1/15 , H01L29/868

3. 发明授权

EP3355403B1 MULTI PORT NON-RECIPROCAL DEVICES WITH SEQUENTIALLY SWITCHED DELAY LINES (SSDL) 有权
公开(公告)号：EP3355403B1
公开(公告)日：2021-04-07
申请号：EP18153590.7
申请日：2018-01-26
发明人： WANG, Yuanxun Ethan
IPC分类号： H01P1/397 , H01P1/387 , H01P1/15 , H01P5/18 , H03K5/159 , H03K17/693 , H03K5/00

4. 发明授权

EP2323269B1 HIGH-FREQUENCY SWITCH MODULE 有权
公开(公告)号：EP2323269B1
公开(公告)日：2019-08-14
申请号：EP09810024.1
申请日：2009-08-28
申请人： Murata Manufacturing Co. Ltd.
发明人： UEJIMA Takanori , WATANABE Shinya
IPC分类号： H04B1/48 , H04B1/44 , H01P1/15

5. 发明公开

EP3444890A1 HIGH FREQUENCY SWITCH 有权
公开(公告)号：EP3444890A1
公开(公告)日：2019-02-20
申请号：EP18785220.7
申请日：2018-03-05
申请人： Mitsubishi Electric Corporation
发明人： SAITO, Tetsunari , KOMARU, Ryota , NAKAHARA, Kazuhiko
IPC分类号： H01P1/15 , H04B1/44
摘要： A high-frequency switch (100) includes: a first transistor (7) connected to an input terminal (1) and a first output terminal (3); a second transistor (9) connected to the first output terminal; a third transistor (10) connected to the second transistor and grounded; a resistor (11) connected to a connection between the second and third transistors and grounded; a switching circuit switchable between a state in which the switching circuit allows passage of a transmitted/received signal between the input terminal and a second output terminal (2) and a state in which the switching circuit cuts off the transmitted/received signal; and a control unit (101) to control the first, second, and third transistors and the switching circuit. At the time of reception, the control unit brings the switching circuit into the state in which the switching circuit cuts off the transmitted/received signal, places the first and third transistors in an on-state, and places the second transistor in an off-state. At the time of transmission and reception with an automatic gain control operation, the control unit brings the switching circuit into the state in which the switching circuit allows the passage of the transmitted/received signal, brings the first and third transistors in an off-state, and brings the second transistor in an on-state.

6. 发明授权

EP2080273B1 COMPACT LOW LOSS HIGH FREQUENCY SWITCH WITH IMPROVED LINEARITY PERFORMANCE 有权
公开(公告)号：EP2080273B1
公开(公告)日：2018-09-05
申请号：EP07839958.1
申请日：2007-11-06
申请人： Skyworks Solutions, Inc.
发明人： PRIKHODKO, Dima , MASON, Jerod F. , MATTE, Steven P. , PESSIA, John , CHIESA, Jason , NABOKIN, Sergey , TKACHENKO, Gene A. , CARTER, Richard A. , SPRINKLE, Steven C. , SHIROKOV, Mikhail
IPC分类号： H04B1/44 , H04B1/48 , H01P1/10 , H03K17/687 , H03K17/693 , H01L27/06 , H01P1/15
CPC分类号： H04B1/48 , H01P1/15 , H03K17/6871 , H03K17/693
摘要： A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.

7. 发明授权

EP2148442B1 Tuning capacitance to enhance FET stack voltage withstand 有权转让
标题翻译：调谐电容以增强FET叠层耐压
公开(公告)号：EP2148442B1
公开(公告)日：2017-06-07
申请号：EP09174085.2
申请日：2007-04-27
申请人： PEREGRINE SEMICONDUCTOR CORPORATION
发明人： Englekirk, Robert Mark
IPC分类号： H03K17/693 , H01P1/15 , H04B1/48 , H03K17/10 , H03K17/16 , H03K17/687 , H03K17/06
CPC分类号： H03K17/6871 , H01H11/00 , H03K17/102 , H03K17/161 , H03K17/693 , H03K2017/066 , Y10T29/49105
摘要： An RF switch to controllably withstand an applied RF voltage Vsw, or a method of fabricating such a switch, which includes a string of series-connected constituent FETs with a node of the string between each pair of adjacent FETs. The method includes controlling capacitances between different nodes of the string to effectively tune the string capacitively, which will reduce the variance in the RF switch voltage distributed across each constituent FET, thereby enhancing switch breakdown voltage. Capacitances are controlled, for example, by disposing capacitive features between nodes of the string, and/or by varying design parameters of different constituent FETs. For each node, a sum of products of each significant capacitor by a proportion of Vsw appearing across it may be controlled to approximately zero.
摘要翻译：用于可控制地承受施加的RF电压Vsw的RF开关或者制造这种开关的方法，其包括串联连接的组成FET的串，其中每对相邻FET之间具有串的节点。该方法包括控制串的不同节点之间的电容以有效地调谐串，这将减少分布在每个组成FET上的RF开关电压的变化，由此增强开关击穿电压。例如，通过在串的节点之间布置电容特征和/或通过改变不同组成FET的设计参数来控制电容。对于每个节点，每个重要电容器的乘积之和乘以出现在其上的Vsw的比例可以被控制为大约为零。

8. 发明授权

EP1505683B1 High frequency switch module and multi-layer substrate for high frequency switch module 有权转让
标题翻译：高频开关模块和用于层压基板
公开(公告)号：EP1505683B1
公开(公告)日：2016-10-05
申请号：EP04018586.0
申请日：2004-08-05
申请人： TDK Corporation
发明人： Itakura, Masami , Goi, Tomoyuki , Adachi, Takuya
IPC分类号： H01P1/15 , H01P1/212
CPC分类号： H01P1/212 , H01P1/15

9. 发明授权

EP1715597B1 Antenne à surfaces rayonnantes planes à circuit commutable 有权
标题翻译：天线与切换电路辐射的平坦表面
公开(公告)号：EP1715597B1
公开(公告)日：2016-03-02
申请号：EP06110781.9
申请日：2006-03-07
申请人： Apple Inc.
发明人： Romao, Fernando
IPC分类号： H01Q9/14 , H01Q5/00 , H01Q21/30 , H01Q5/321 , H01Q5/371 , H01P1/10 , H01P1/15 , H04B7/08
CPC分类号： H01Q9/145 , H01Q5/00 , H01Q5/321 , H01Q5/371 , H01Q21/30

10. 发明公开

EP2738947A1 Radio frequency switch 有权
标题翻译： Hochfrequenzschalter
公开(公告)号：EP2738947A1
公开(公告)日：2014-06-04
申请号：EP14000687.5
申请日：2006-12-22
申请人： KMW Inc.
发明人： Moon, Young Chan , LEE, Kang-Hyun
IPC分类号： H04B1/44 , H01P1/15 , H01P5/10
CPC分类号： H04B1/48 , H01P1/15 , H01P5/1007
摘要： Disclosed is a radio frequency (RF) switch including: a circulator having first to third nodes, which are connected to first to third ports, respectively; and a slot line pattern unit installed in a connection line between the third node of the circulator and the third port so as to carry out signal transmission or interception, wherein the slot line pattern unit includes a switching circuit, which is installed at a predetermined location so as to transmit or intercept a signal by maintaining or short-circuiting a gap of a slot line corresponding to the installed location according to an external switching control signal.
摘要翻译：公开了一种射频（RF）开关，包括：具有分别连接到第一至第三端口的具有第一至第三节点的循环器; 以及槽线图案单元，其安装在所述循环器的第三节点与所述第三端口之间的连接线中，以执行信号传输或截取，其中所述缝隙线图案单元包括切换电路，其安装在预定位置以便通过根据外部开关控制信号维持或短路与安装位置相对应的缝隙线的间隙来发送或截取信号。

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