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1. 发明授权

EP3034658B1 VERFAHREN ZUM ZÜCHTEN EINES EINKRISTALLS DURCH KRISTALLISIEREN DES EINKRISTALLS AUS EINER FLIESSZONE 有权
标题翻译： VERFAHREN ZUMZÜCHTENEINES EINKRISTALLS DURCH KRISTALLISIEREN DES EINKRISTALLS AUS EINER FLIESSZONE
公开(公告)号：EP3034658B1
公开(公告)日：2017-06-14
申请号：EP15198405.1
申请日：2015-12-08
申请人： Siltronic AG
发明人： Raming, Georg , Altmannshofer, Ludwig , Ratnieks, Gundars , Möller, Martin , Mümmler, Frank
IPC分类号： C30B13/20 , C30B13/32 , C30B29/06 , C30B13/26
CPC分类号： C30B13/32 , C30B13/20 , C30B13/26 , C30B29/06

2. 发明授权

EP0386121B1 IMPROVED ZONE MELT RECRYSTALLIZATION APPARATUS 失效
标题翻译：改进的区熔再结晶装置
公开(公告)号：EP0386121B1
公开(公告)日：1995-03-01
申请号：EP88910383.4
申请日：1988-11-10
申请人： KOPIN CORPORATION
发明人： ZAVRACKY, Paul, M. , O'CONNOR, Kevin, J.
IPC分类号： C30B13/00 , C30B13/24 , C30B13/32 , C30B31/12 , H01L21/00
CPC分类号： H01L21/67115 , C30B13/00 , C30B13/24 , C30B13/32 , C30B31/12 , Y10S117/90 , Y10S117/911 , Y10T117/108
摘要： The improved zone-melt recrystallization apparatus is comprised of a port system for providing a thermal barrier between the recrystallization chamber and the loader assembly. A bellows system is used to lift a plurality of pins that support a silicon wafer being recrystallized. Flexure supports are designed to constrain the motion of the pins within the desired direction of motion of the wafer.
摘要翻译：改进的区熔融重结晶装置包括用于在重结晶室和装载器组件之间提供热障的端口系统。波纹管系统用于提升支撑正在再结晶的硅晶片的多个销。挠性支撑件被设计用于限制销在晶片的期望运动方向内的运动。

3. 发明公开

EP0034283A3 Process and apparatus for the zonal heating or cooling of elongated workpieces 失效
标题翻译：用于长期工作的区域加热或冷却的方法和装置
公开(公告)号：EP0034283A3
公开(公告)日：1982-03-10
申请号：EP81100641
申请日：1981-01-29
申请人： Forschungszentrum Jülich GmbH
发明人： Welter, Jean-Marie, Dr.
IPC分类号： C21D09/00 , C22F01/00 , B22D27/04 , C30B13/00 , C30B13/32 , C30B21/00
CPC分类号： C30B13/32 , C21D9/0062 , C30B11/001 , C30B13/005 , F27B9/243

4. 发明公开

EP2142686A1 METHOD AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL 有权转让
标题翻译： VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG EINES EINKRISTALLS
公开(公告)号：EP2142686A1
公开(公告)日：2010-01-13
申请号：EP07722699.1
申请日：2007-04-13
申请人： Topsil Semiconductor Materials A/S
发明人： VAABENGAARD, Per , NIELSEN, Anne , LARSEN, Theis, Leth , PETERSEN, Jan, Eyving , JENSEN, Leif
IPC分类号： C30B13/26 , C30B13/32 , C30B29/06
CPC分类号： C30B29/06 , C30B13/00 , C30B13/26 , C30B13/32 , C30B13/34 , Y10T117/1084
摘要： A method is disclosed for producing a single crystal comprising passing a polycrystalline rod through a heating region to create a molten zone, applying a magnetic field to the molten zone, and inducing growth of a single crystal upon solidification of the molten material on a single crystal seed. The growing single crystal is rotated in a pattern alternating between clockwise and counter-clockwise rotational directions. The method is useful for producing silicon single crystals having uniform electrical characteristics. Also disclosed is an apparatus for performing said method.
摘要翻译：公开了一种用于生产单晶的方法，包括使多晶棒通过加热区域以产生熔融区，向熔融区施加磁场，并且在熔融材料凝固在单晶上时诱发单晶生长种子。成长中的单晶以顺时针和逆时针旋转方向交替的图案旋转。该方法可用于生产具有均匀电特性的硅单晶。还公开了一种用于执行所述方法的装置。

5. 发明授权

EP0174003B1 Stab- und Tiegel-Halterung 失效
标题翻译：坚固耐用
公开(公告)号：EP0174003B1
公开(公告)日：1990-08-08
申请号：EP85111100.5
申请日：1985-09-03
申请人： FORSCHUNGSZENTRUM JÜLICH GMBH
发明人： Boden, Karl , Ibach, Harald, Prof., Dr. , Linke, Udo
IPC分类号： C30B15/30 , C30B13/32
CPC分类号： C30B15/30 , C30B13/32 , Y10S117/917 , Y10T117/1008 , Y10T117/1072 , Y10T117/1084
摘要： 1. Holder for ingot and crucible for apparatuses for non-crucible zone melting and for drawing from the crucible, having a magnetizable core which is attached to the holder and is suspended by means of a magnet (axial stabilizing magnet) on which a device for the axial displacement acts, characterized in that at least one radial stabilizing device for the magnetizable core (10) is provided, which radial stabilizing device consists of electromagnets (11), surrounding the magnetizable core without contact, an electronic control unit (13) and position sensors (14), the electromagnets being acted upon by signals from the electronic control unit which are produced by the latter as a function of the signals from the position sensors, which respond to deviations of the magnetizable core from its desired position.
摘要翻译： 1.用于非坩埚区域熔化和从坩埚拉拔的装置的坩埚坩埚和坩埚，其具有附接到保持器并且通过磁体（轴向稳定磁体）悬挂的可磁化芯，所述轴向位移作用，其特征在于，提供至少一个用于可磁化铁芯（10）的径向稳定装置，所述径向稳定装置由电磁体（11）组成，围绕可磁化铁芯而不接触，电子控制单元（13）和位置传感器（14），电磁体由来自电子控制单元的信号作用，该信号是由后者产生的信号，作为来自位置传感器的信号的函数，其响应于可磁化磁芯与其期望位置的偏差。

6. 发明公开

EP0174003A3 Holder for ingot and crucible 失效
标题翻译：坚固耐用
公开(公告)号：EP0174003A3
公开(公告)日：1988-04-20
申请号：EP85111100
申请日：1985-09-03
申请人： Forschungszentrum Jülich GmbH
发明人： Boden, Karl , Ibach, Harald, Prof., Dr. , Linke, Udo
IPC分类号： C30B15/30 , C30B13/32
CPC分类号： C30B15/30 , C30B13/32 , Y10S117/917 , Y10T117/1008 , Y10T117/1072 , Y10T117/1084

7. 发明公开

EP0123863A3 Tape foils made of metal, process and apparatus for their manufacture, and their application 失效
标题翻译：金属制品的金属制品及其制造方法及其设备及其应用
公开(公告)号：EP0123863A3
公开(公告)日：1987-07-15
申请号：EP84102995
申请日：1984-03-19
申请人： BAYER AG
发明人： Schwirtlich, Ingo, Dr. , Woditsch, Peter, Dr.
IPC分类号： C30B13/32 , C30B13/00
CPC分类号： C30B13/32 , C30B13/00 , C30B29/60 , Y10T428/12458

8. 发明授权

EP2142686B1 METHOD FOR PRODUCING A SINGLE CRYSTAL 有权转让
公开(公告)号：EP2142686B1
公开(公告)日：2018-12-12
申请号：EP07722699.1
申请日：2007-04-13
申请人： Topsil GlobalWafers A/S
发明人： VAABENGAARD, Per , NIELSEN, Anne , LARSEN, Theis, Leth , PETERSEN, Jan, Eyving , JENSEN, Leif
IPC分类号： C30B13/26 , C30B13/32 , C30B29/06
CPC分类号： C30B29/06 , C30B13/00 , C30B13/26 , C30B13/32 , C30B13/34 , Y10T117/1084
摘要： A method is disclosed for producing a single crystal comprising passing a polycrystalline rod through a heating region to create a molten zone, applying a magnetic field to the molten zone, and inducing growth of a single crystal upon solidification of the molten material on a single crystal seed. The growing single crystal is rotated in a pattern alternating between clockwise and counter-clockwise rotational directions. The method is useful for producing silicon single crystals having uniform electrical characteristics. Also disclosed is an apparatus for performing said method.

9. 发明授权

EP2112255B1 SILICON CRYSTALLINE MATERIAL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：晶体硅材料及其制造方法
公开(公告)号：EP2112255B1
公开(公告)日：2016-11-30
申请号：EP08710571.4
申请日：2008-01-23
申请人： Sumco Techxiv Corporation
发明人： TOGAWA, Shinji , UEDA, Ryosuke
IPC分类号： C30B13/32 , C30B15/22 , C30B29/06 , C30B13/28
CPC分类号： C30B29/06 , C30B13/285 , C30B13/32 , C30B15/22

10. 发明授权

EP0174004B1 Verfahren zur Herstellung eines kristallinen Körpers aus der Schmelze 失效
标题翻译：从熔体制造水晶制品的工艺
公开(公告)号：EP0174004B1
公开(公告)日：1990-08-08
申请号：EP85111101.3
申请日：1985-09-03
申请人： FORSCHUNGSZENTRUM JÜLICH GMBH
发明人： Boden, Karl , Ibach, Harald, Prof. Dr. , Linke, Udo
IPC分类号： C30B15/30 , C30B13/32
CPC分类号： C30B13/32 , C30B15/30 , Y10S117/917 , Y10T117/1008 , Y10T117/1072 , Y10T117/1084

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