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1. 发明授权

EP2952612B1 VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINES KRISTALLS AUS HALBLEITERMATERIAL 有权
标题翻译：设备和方法制造半导体材料的晶体
公开(公告)号：EP2952612B1
公开(公告)日：2016-08-24
申请号：EP15168895.9
申请日：2015-05-22
申请人： Siltronic AG
发明人： Brenninger, Georg , Raming, Georg
IPC分类号： C30B29/06 , C30B13/08 , C30B13/14 , C30B13/20 , C30B13/30 , C30B11/00 , C30B11/10
CPC分类号： C30B13/20 , C30B11/001 , C30B11/003 , C30B11/10 , C30B13/08 , C30B13/14 , C30B13/30 , C30B15/02 , C30B15/12 , C30B29/06 , Y10T117/108

2. 发明授权

EP1757716B1 METHOD AND APPARATUS FOR PREPARING CRYSTAL 有权
标题翻译：方法和设备的水晶制造
公开(公告)号：EP1757716B1
公开(公告)日：2016-08-17
申请号：EP05749034.4
申请日：2005-06-10
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： SASAURA, Masahiro , KOHDA, Hiroki , FUJIURA, Kazuo , KOBAYASHI, Takashi , IMAI, Tadayuki , KURIHARA, Takashi
IPC分类号： C30B11/00 , C30B11/04 , C30B35/00 , C30B29/30
CPC分类号： C30B35/00 , C30B11/001 , C30B11/04 , C30B29/30 , Y10T117/1024 , Y10T117/1052 , Y10T117/1056 , Y10T117/1092

3. 发明授权

EP2524977B1 Apparatus for manufacturing silicon substrate for solar cell using continuous casting facilitating temperature control and method of manufacturing silicon substrate using the same 有权
标题翻译：用于制造具有连续gusserleichternder温度控制和处理的太阳能电池的硅基板的制造的硅衬底，使得装置
公开(公告)号：EP2524977B1
公开(公告)日：2013-12-18
申请号：EP11167355.4
申请日：2011-05-24
申请人： Korea Institute of Energy Research
发明人： Jang, Bo Yun , Lee, Jin Seok , Kim, Joon Soo
IPC分类号： C30B28/10 , B22D11/045 , C01B33/00 , C01B33/037 , C30B11/00 , C30B29/06
CPC分类号： B22D11/045 , C01B33/037 , C30B11/001 , C30B11/003 , C30B28/10 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1024 , Y10T117/1092
摘要： The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.

4. 发明公开

EP2630278A2 PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL AND DEVICE FOR THE SAME 有权
标题翻译：方法繁殖的碳化硅单晶及其装置
公开(公告)号：EP2630278A2
公开(公告)日：2013-08-28
申请号：EP11834582.6
申请日：2011-10-17
申请人： SK Innovation Co., Ltd.
发明人： HONG, Sung Wan , KIM, Young Shol
IPC分类号： C30B29/36 , C30B19/10 , H01L21/208
CPC分类号： C30B15/002 , C30B11/001 , C30B15/02 , C30B17/00 , C30B19/02 , C30B29/36 , H01L21/02529 , H01L21/02628 , Y10T117/1032 , Y10T117/1056
摘要： Provided is a method for manufacturing a silicon carbide single crystal using a solution process including coming a seed crystal substrate for growing silicon carbide into contact with a Si-C alloy solution including at least one additive metal and growing the silicon carbide single crystal on a seed crystal for growing silicon carbide, including feeding a silicon feedstock into an alloy solution when a molar ratio of Si and the additive metal is lower than an initially set value as the reaction progresses. The method increases a crystal growth speed, maintains the growth speed, and prevents the growth from unwillingly stopping when the silicon carbide single crystal is manufactured using a solution growth process.

5. 发明公开

EP1947221A2 Casting method for polycrystalline silicon 审中-公开
标题翻译：多晶硅铸造方法
公开(公告)号：EP1947221A2
公开(公告)日：2008-07-23
申请号：EP08000576.2
申请日：2008-01-14
申请人： Sumco Solar Corporation
发明人： Sasatani, Kenichi , Nakagawa, Keita , Onizuka, Tomohiro , Kubo, Nobuyuki
IPC分类号： C30B29/06 , C30B11/00 , B22D23/06
CPC分类号： C30B11/001 , C30B11/003 , C30B28/06 , C30B29/06
摘要： In a casting method for polycrystalline silicon in which a bottomless cooling crucible with a part of a certain length in an axial direction being circumferentially and plurally sectioned is provided inside an induction coil, producing a silicon melt within the cooling crucible by means of electromagnetically induced heating by the induction coil, and withdrawing the silicon melt in a downward direction while being solidified, an alternating current with a frequency of 25 - 35 kHz is applied on the induction coil. According to the casting method for polycrystalline silicon of the present invention, in addition to preventing rapid cooling of the ingot surface at the time of solidifying the molten silicon and producing the ingot, the stirring of the molten silicon inside the crucible is suppressed to thereby promote the growth of large diameter crystals, with the result that the conversion efficiency of the cast polycrystalline silicon used as solar cells is increased.
摘要翻译：在多晶硅的铸造方法中，在感应线圈的内部设置沿轴向具有一定长度的一部分的无底冷却坩埚，并且在感应线圈的内部设置多个截面，通过电磁感应加热在冷却坩埚内产生硅熔体通过感应线圈，并且在固化时向下方向抽出硅熔体，在感应线圈上施加频率为25-35kHz的交流电。根据本发明的多晶硅的铸造方法，除了防止在熔融硅凝固和铸锭生产时锭块表面的快速冷却，抑制了坩埚内熔融硅的搅拌从而促进大直径晶体的生长，结果增加了用作太阳能电池的铸造多晶硅的转换效率。

6. 发明公开

EP1742870A1 PROCEDE ET INSTALLATION DE FABRICATION DE BLOCS D'UN MATERIAU SEMICONDUCTEUR 有权
标题翻译：方法和设备制造半导体材料块
公开(公告)号：EP1742870A1
公开(公告)日：2007-01-17
申请号：EP05746642.7
申请日：2005-04-19
申请人： EFD Induction SA
发明人： RIVAT, Pascal , DEL GOBBO, Jean-Pierre, La Grivolée
IPC分类号： C01B33/037
CPC分类号： C01B33/037 , C30B11/00 , C30B11/001 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The invention relates to an installation (10) for the production of blocks of a semiconductor material, consisting of: at least one first chamber (12, 14) containing an atmosphere with at least one inert gas and comprising a fusion system (42) which is adapted to melt the semiconductor material, a purification system (46) which is adapted to remove impurities from the molten semiconductor material and a system (20) for moving a crystallisation crucible (32) containing the purified molten semiconductor material; and at least one second chamber (14) which is connected to the first chamber by means of an opening, a mobile part (18) being adapted to seal said opening hermetically. The aforementioned movement system (20) is designed to move the crystallisation crucible into the second chamber before the purified molten semiconductor material begins to solidify, said second chamber containing a cooling system which promotes the solidification of the material.

7. 发明公开

EP1338682A3 Flowable chips and methods and apparatus for their preparation and use of same 有权
标题翻译：它们的制备和它们的用途可流动的芯片，方法和装置
公开(公告)号：EP1338682A3
公开(公告)日：2004-01-28
申请号：EP03250759.2
申请日：2003-02-06
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Horstman, Terence Lee , Molnar, Michael John , Schmidt, Chris Tim , Spencer, Roger Dale Jr.
IPC分类号： B07B13/04 , C30B15/02
CPC分类号： C30B15/002 , B07B1/4654 , B07B13/04 , C30B11/001 , C30B11/003 , C30B15/02 , C30B15/04 , C30B29/06 , Y10T117/1056
摘要： A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.
摘要翻译：一种用于与充电多晶硅的坩埚方法包括将可流动的芯片在切克拉斯基型方法中所用的坩埚。可流动的芯片是由通过化学气相沉积工艺制备的多晶硅制成的多晶硅颗粒，和可流动的芯片具有受控的粒度分布，基因反弹非球形形态，低水平的散装杂质和表面杂质的低的水平。可流动的芯片可以被添加到使用常规馈线设备,:如振动供料器系统和罐馈系统的坩埚中。

8. 发明公开

EP0349904A2 Apparatus for casting silicon 失效
标题翻译：用于铸造硅的设备
公开(公告)号：EP0349904A2
公开(公告)日：1990-01-10
申请号：EP89111868.9
申请日：1989-06-29
申请人： SUMITOMO SITIX CO., LTD.
发明人： Kaneko, Kyojiro , Masuda, Jun-ya
IPC分类号： B22D11/01 , B22D11/10
CPC分类号： C30B29/06 , B22D11/001 , B22D11/11 , B22D11/141 , B22D23/06 , C30B11/001 , C30B11/002 , C30B11/003
摘要： An apparatus for casting silicon, characterized by comprising an induction coil (7), an electrically conductive bottomless crucible (6), of which at least a part in an axial direction is divided into a plurality of parts (16) in a circumferential direction, disposed within said induction coil (7) and means (24) for heating solidified silicon (12) disposed below a boundary surface level of molten silicon (13) and solidified silicon (12) within said bottomless crucible.
摘要翻译： 1。一种铸造硅的装置，其特征在于，包括：感应线圈（7）;导电性无底坩埚（6），所述无底坩埚的轴向的至少一部分沿圆周方向被分割成多个部分（16）设置在所述感应线圈（7）内的装置和用于加热设置在所述无底坩埚内的熔融硅（13）和固化硅（12）的边界表面下方的固化硅（12）的装置（24）。

9. 发明公开

EP0282059A2 Continuous method for manufacturing grain-oriented magnetostrictive bodies 失效
标题翻译：用于制造磁致伸缩机构与晶粒取向的连续过程。
公开(公告)号：EP0282059A2
公开(公告)日：1988-09-14
申请号：EP88103818.6
申请日：1988-03-10
申请人： IOWA STATE UNIVERSITY RESEARCH FOUNDATION, INC.
发明人： Gibson, Edwin D. , Verhoeven, John D. , Schmidt, F. A.
IPC分类号： C30B11/00 , C30B29/52 , H01L41/22
CPC分类号： C30B11/001 , C30B11/00 , C30B29/52 , H01L41/47
摘要： The invention comprises a continuous casting and crystallization method for manufacturing grain-oriented magnetostrictive bodies. A magnetostrictive alloy is melted in a crucible having a bottom outlet. The melt is discharged through the bottom of the crucible and deposited in an elongated mold. Heat is removed from the deposited melt through the lower end portion of the mold to progressively solidify the melt. The solid-liquid interface of the melt moves directionally upwardly from the bottom to the top of the mold, to produce the axial grain orientation.
摘要翻译：本发明包括用于制造晶粒取向磁致伸缩体的连续铸造和结晶方法。磁致伸缩合金在具有底部出口的坩埚中熔化。将熔体通过坩埚的底部排出，并在细长模具沉积。热量从所沉积的去除通过在模具的下端部熔化以逐步固化熔体。熔体的固 - 液界面移动定向向上从底部到模具的顶部，以产生轴向的晶粒取向。

10. 发明公开

EP0034283A2 Verfahren und Vorrichtung zum zonenweisen Erwärmen bzw. Abkühlen länglicher Behandlungskörper 失效
标题翻译：纬向加热或细长处理体的冷却方法和装置。
公开(公告)号：EP0034283A2
公开(公告)日：1981-08-26
申请号：EP81100641.0
申请日：1981-01-29
申请人： FORSCHUNGSZENTRUM JÜLICH GMBH
发明人： Welter, Jean-Marie, Dr.
IPC分类号： C21D9/00 , C22F1/00 , B22D27/04 , C30B13/00 , C30B13/32 , C30B21/00
CPC分类号： C30B13/32 , C21D9/0062 , C30B11/001 , C30B13/005 , F27B9/243
摘要： Zonenschmelzverfahren an Formkörpern oder die Herstellung gerichtet erstarrter Formkörper im Durchlaufverfahren, die bislang chargenweise an Einzelkörper vorgenommen wurden, lassen sich gemäß der Erfindung kontinuierlich gestalten, indem man die Formkörper oder gerichtet zu verfestigende Schmelze aufweisende Materialtiegel fortlaufend achsparallel zueinander auf bzw. an einem umlaufenden Band anordnet und durch eine insbesondere horizontale Heiz-oder Kühlzone längs einer zu dieser Zone geneigten Bahn schickt. Eine dafür geeignete Vorrichtung hat zumindest eine längliche Heizzone (39) und ein in der durch die Heizzonenlängsrichtung gehenden Vertikalebene liegendes Transportband (17), dessen Transportrichtung mit der Heizzonenrichtung einen Winkel bildet und das insbesondere Halteelemente zum Einhängen oder Aufnehmen der Formkörper oder Materialtiegel aufweist.
摘要翻译：在模制品区域熔融方法或以连续方法生产定向凝固成形体的，这在以前在单个主体中分批进行，可以设计连续地根据本发明，通过将成型体或定向将被固化物质含有坩埚连续轴向平行于或在周向带熔体并且通过沿着倾斜路径，该区域中的特定的水平加热或冷却区发送。一种合适的装置具有至少一个细长的加热区（39）并且位于通过Heizzonenlängsrichtung垂直平面传送带（17）的通过，与Heizzonenrichtung输送方向形成一个角度，并且具有特别是用于附接或接收所述成形体或材料坩埚内的保持元件。

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