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1. 发明公开

EP1736572A1 GROUP III NITRIDE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译： GRUPPE-III-NITRID-KRISTALLSUBSTRAT，HERSTELLUNGSVERFAHRENDAFÜRUND GRUPPE-III-NITRID-HALBLEITERELEMENT
公开(公告)号：EP1736572A1
公开(公告)日：2006-12-27
申请号：EP05721657.4
申请日：2005-03-30
申请人： Sumitomo Electric Industries, Ltd. , Mori, Yusuke
发明人： SASAKI, Takatomo , MORI, Yusuke , YOSHIMURA, Masashi , KAWAMURA, Fumio , HIROTA, Ryu , NAKAHATA, Seiji
IPC分类号： C30B29/38 , C30B9/10 , C30B11/06 , H01L21/208
CPC分类号： C30B9/08 , C30B9/00 , C30B11/00 , C30B11/06 , C30B29/403
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance (1), a group III-element-containing substance (2) and a nitrogen-element-containing substance (3) into a reactor (51), forming a melt (5) containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor (51), and growing group III-nitride crystal (6) from the melt (5), and characterized by handling the alkali-metal-element-containing substance (1) in a drying container (100) in which moisture concentration is controlled to at most 1.0ppm at least in the step of introducing the alkali-metal-element-containing substance (1) into the reactor (51) is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质（1），含III族元素的物质（2）和含氮元素的物质（3 ）形成反应器（51），形成至少含有反应器（51）中的碱金属元素，第III族元素和氮元素的熔体（5），以及来自所述反应器（51）的生长III族氮化物晶体熔融（5），其特征在于，在将水分浓度控制在1.0ppm以下的干燥容器（100）中处理含碱金属元素的物质（1），至少在引入碱金属含有元素的物质（1）进入反应器（51）。因此可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

2. 发明公开

EP2484817A1 METHOD FOR PRESERVING A GALLIUM NITRIDE SUBSTRATE, PRESERVED GALLIUM NITRIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR 有权转让
标题翻译：方法用于保存氮化镓，氮化镓保存，半导体元件及其制造方法
公开(公告)号：EP2484817A1
公开(公告)日：2012-08-08
申请号：EP10820226.8
申请日：2010-07-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： NAKAHATA, Seiji
IPC分类号： C30B29/38 , C23C16/34 , H01L21/205 , H01L33/32
CPC分类号： C30B29/406 , C30B33/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/16 , H01L33/46
摘要： A GaN substrate storage method of storing, within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m 3 , a GaN substrate (1) having a planar first principal face (1 m ), and whose plane orientation in an arbitrary point ( P ) along the first principal face (1 m ) and separated 3 mm or more from the outer edge thereof has an off-inclination angle Δ α of -10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane (1 a ) that is inclined 50° or more, 90° or less with respect to a plane (1 c ), being either the (0001) plane or the (000 1 ) plane, through the arbitrary point. In this way a method of storing GaN substrates whose principal-face plane orientation is other than (0001) or (000 1 ), with which semiconductor devices of favorable properties can be manufactured is made available.
摘要翻译：的GaN在气氛中的氧浓度不大于15体积更大的衬底存储存储方法，之内。％和水蒸汽浓度是不大于20克/米3，GaN衬底（1），具有平坦的第一主面（1米），并且在任意点（P），其面取向在沿所述第一主面（1米），并分离3mm以上从外边缘上具有偏离的倾斜角“的-10°以上，10°或以下，相对于任意指定的晶面的平面取向±（1）并倾斜50°或更大，90°或以下，相对于一个平面（1c）中，是无论是（0001）面或（000）面，通过任意的点。以这种方式，提供可以制造贮藏GaN衬底是谁的主面面方位比（0001）或其它（000 1），具有良好的特性的哪些半导体器件的方法。

3. 发明公开

EP2080823A1 GROUP III ELEMENT NITRIDE SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, PROCESSES FOR PRODUCING THESE, AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT 有权转让
标题翻译： III族元素氮化物衬底，外延与多层基板，工艺用于生产和用于生产半导体元件的方法
公开(公告)号：EP2080823A1
公开(公告)日：2009-07-22
申请号：EP07829399.0
申请日：2007-10-09
申请人： Sumitomo Electric Industries, Ltd.
发明人： ISHIBASHI, Keiji , HACHIGO, Akihiro , IRIKURA, Masato , NAKAHATA, Seiji
IPC分类号： C30B29/38 , H01L21/205 , H01L21/304 , H01L33/00
摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×10 14 , and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×10 13 ; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×10 13 , and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×10 14 , and a haze level of the surface (3) is not more than 5 ppm.
摘要翻译：在其上III族氮化物衬底以外延生长的良好的质量层可以被形成，并且制造的方法获得。的GaN衬底（1）是下列中的一个：III族氮化物衬底，worin每一个平方厘米表面的酸性物质的原子的数目（3）是不大于2×10 14，和硅的数量每表面（3）的平方厘米原子为不大于3×10 13; III族氮化物衬底，worin每一个平方厘米表面的硅原子的数目（3）不大于3×10 13，并且该表面的雾度水平（3）不超过5ppm; 和III族氮化物衬底，worin每一个平方厘米表面的酸性物质的原子的数目（3）是不大于2×10 14，并且该表面的雾度水平（3）不超过5ppm ，

4. 发明公开

EP1818430A1 III GROUP NITRIDE SINGLE CRYSTAL AND METHOD FOR PREPARATION THEREOF, AND SEMICONDUCTOR DEVICE 有权
标题翻译： HERSTELLUNGSVERFAHRENFÜRGRUPPE-III-NITRID-EINKRISTALL
公开(公告)号：EP1818430A1
公开(公告)日：2007-08-15
申请号：EP05759959.9
申请日：2005-07-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： NAKAHATA, Seiji
IPC分类号： C30B29/38 , C30B19/02 , C30B19/04
CPC分类号： C30B19/04 , C30B7/00 , C30B7/005 , C30B9/06 , C30B13/02 , C30B29/403
摘要： Affords a method of manufacturing III nitride single crystal whereby yields from the source materials are high and the crystal growth rate is advanced.
A III nitride single-crystal manufacturing method in which a liquid layer (3) of 200 µm or less thickness is formed in between a substrate (1) and a III nitride source-material baseplate (2), and III nitride single crystal (4) is grown onto the face (1s) on the liquid-layer side of the substrate (1). Herein, the substrate (1) in at least a superficial layer (1a) on the liquid-layer side may be formed of a III nitride single crystal, while the III nitride source-material baseplate (2) can be formed of a III nitride polycrystal. Further, the substrate (1) in at least a superficial layer (1a) on the liquid-layer side, and the III nitride source-material baseplate (2) can be formed of a III nitride single crystal, while the face (1s) on the liquid-layer side of the substrate (1) can be made a III-atom surface, and the face (2s) on the liquid-layer side of the III nitride source-material baseplate (2) can be made a nitrogen-atom surface.
摘要翻译：提供一种制造III族氮化物单晶的方法，由此源材料的产率高并且晶体生长速率提高。在基板（1）和III族氮化物源材料基板（2）之间形成厚度为200μm以下的液体层（3）和III族氮化物单晶体（4）的III族氮化物单晶体制造方法）生长在基板（1）的液体层侧的面（1s）上。这里，液晶层侧的至少表面层（1a）中的基板（1）可以由III族氮化物单晶形成，而III族氮化物源材料基板（2）可以由III族氮化物多晶。此外，液面层至少表层（1a）中的基板（1）和III族氮化物源材料基板（2）可以由III族氮化物单晶形成，而面（1s）可以在基板（1）的液面侧形成III原子表面，并且可以将III族氮化物源材料基板（2）的液体层侧的面（2s）原子表面。

6. 发明授权

EP1818430B1 METHOD FOR PREPARATION OF III GROUP NITRIDE SINGLE CRYSTAL 有权
标题翻译：用于生产III族氮化物单晶
公开(公告)号：EP1818430B1
公开(公告)日：2013-04-10
申请号：EP05759959.9
申请日：2005-07-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： NAKAHATA, Seiji
IPC分类号： C30B29/38 , C30B19/02 , C30B19/04 , C30B13/02 , C30B9/06 , C30B29/40
CPC分类号： C30B19/04 , C30B7/00 , C30B7/005 , C30B9/06 , C30B13/02 , C30B29/403

7. 发明公开

EP2460914A1 GROUP III NITRIDE CRYSTAL AND PRODUCTION METHOD THEREOF 有权转让
标题翻译： GRUPPE-III-NITRID-KRISTALL UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2460914A1
公开(公告)日：2012-06-06
申请号：EP10793952.2
申请日：2010-06-03
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEMATSU, Koji , OSADA, Hideki , NAKAHATA, Seiji , FUJIWARA, Shinsuke
IPC分类号： C30B29/38 , C23C16/34 , C30B25/20 , H01L33/32
CPC分类号： H01L29/045 , C01B21/0632 , C01P2002/90 , C01P2006/12 , C30B29/403 , C30B29/406 , C30B33/06 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/16 , H01L33/32
摘要： There is provided a method for producing a group III nitride crystal in which a high-crystallinity group III nitride crystal having a main plane with a plane orientation other than {0001} can be grown at a high crystal growth rate.
A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001. direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.
摘要翻译：提供了一种制备III族氮化物晶体的方法，其中可以以高晶体生长速率生长具有除{0001}以外的具有平面取向的主平面的高结晶度III族氮化物晶体。本发明的III族氮化物晶体的制造方法包括从III族氮化物块状晶体1切割出具有主面的多个III族氮化物晶体基板10p，10q，主平面10pm，10qm具有相对于从{20-21}，{20-2-1}，{22-41}和{22-41}组成的组中的晶体 - 几何等效平面取向具有5度或更小的偏离角度的平面取向， 22-4-1}，使基板10p和10q彼此相邻地布置，使得基板10p和10q的主平面10pm和10qm彼此平行并且每个[0001]。基板10p和10q的方向彼此重合，并且在基板10p和10q的主平面10pm和10qm上生长III族氮化物晶体20。

8. 发明公开

EP2453043A1 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：制造氮化物半导体衬底的方法
公开(公告)号：EP2453043A1
公开(公告)日：2012-05-16
申请号：EP10797037.8
申请日：2010-06-28
申请人： Sumitomo Electric Industries, Ltd.
发明人： OSADA, Hideki , UEMATSU, Koji , NAKAHATA, Seiji , NAKANISHI, Fumitake
IPC分类号： C30B29/38 , C23C16/01 , C30B25/20
CPC分类号： C30B29/403 , C30B25/186 , C30B29/406
摘要： The invention provides a method of manufacturing a nitride semiconductor substrate capable of efficiently manufacturing a nitride semiconductor substrate having a nonpolar plane as a major surface in which polycrystalline growth is minimized. A method of manufacturing a GaN substrate, which is a nitride semiconductor substrate, includes steps (S10 and S20) of preparing a starting substrate composed of GaN and having a major surface with an off-axis angle of between 4.1° and 47.8° inclusive with respect to a {1-100} plane, a step (540) of epitaxially growing a semiconductor layer made of GaN on the major surface of the starting substrate, and a step (S50) of picking out a GaN substrate having an m plane as the major surface from the semiconductor layer.
摘要翻译：本发明提供一种制造氮化物半导体衬底的方法，其能够有效地制造具有非极性面作为其中多晶生长被最小化的主表面的氮化物半导体衬底。制造作为氮化物半导体衬底的GaN衬底的方法包括以下步骤（S10和S20）：准备由GaN构成的起始衬底并且具有离轴角度在4.1°和47.8°之间的主表面，关于{1-100}面，在所述初始基板的所述主表面上外延生长由GaN制成的半导体层的步骤（540），以及步骤（S50），所述步骤（S50）半导体层的主要表面。

9. 发明公开

EP2037011A1 SINGLE CRYSTAL OF NITRIDE OF GROUP III ELEMENT AND METHOD OF GROWING THE SAME 有权
标题翻译： ZIEHVERFAHREN VON EINEM EINKRISTALL EINES NITRIDS EINES GRUPPE-III-ELEMENTS
公开(公告)号：EP2037011A1
公开(公告)日：2009-03-18
申请号：EP06766810.3
申请日：2006-06-16
申请人： Sumitomo Electric Industries, Ltd.
发明人： MIYANAGA, Michimasa , MIZUHARA, Naho , FUJIWARA, Shinsuke , NAKAHATA, Seiji , NAKAHATA, Hideaki
IPC分类号： C30B29/38
CPC分类号： C30B23/005 , C30B29/403 , C30B35/002 , Y10T428/2982
摘要： Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals formed by the growth methods.
One aspect of the present invention is a method of growing a III nitride single crystal 3 inside a crystal-growth vessel 11, the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel 11. Employing the crystal-growth vessel 11 makes it possible to discharge from 1% to 50% of a source gas 4 inside the crystal-growth vessel 11 via the pores in the porous body to the outside of the crystal-growth vessel 11.
摘要翻译：提供了具有良好重现性的具有良好结晶度的III族氮化物单晶的方法，以及通过生长方法形成的III族氮化物晶体。本发明的一个方面是在晶体生长容器11内生长III族氮化物单晶3的方法，其特征在于，由孔隙率为0.1％〜70％的金属碳化物形成的多孔体为用于晶体生长容器11的至少一部分。使用晶体生长容器11使得可以通过多孔的孔中的晶体生长容器11内的源气体4的1％〜50％的排出量身体到晶体生长容器11的外部。

10. 发明授权

EP2484817B1 METHOD FOR PRESERVING A GALLIUM NITRIDE SUBSTRATE 有权转让
公开(公告)号：EP2484817B1
公开(公告)日：2019-10-02
申请号：EP10820226.8
申请日：2010-07-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： NAKAHATA, Seiji
IPC分类号： C30B29/38 , C23C16/34 , H01L21/205 , H01L33/32 , C30B33/00 , H01L33/16 , H01L33/46

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