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    • 8. 发明公开
    • SMALL SIGNAL AMPLIFIER
    • 小信号放大器
    • EP3182587A1
    • 2017-06-21
    • EP15200499.0
    • 2015-12-16
    • IMEC VZW
    • Mora Lopez, CarolinaMitra, Srinjoy
    • H03F3/45H03F1/02
    • H03F1/26A61B5/04001H03F1/0261H03F3/45179H03F3/45183H03F3/45188H03F3/45192H03F3/45475H03F2200/171H03F2200/261H03F2200/513H03F2203/45136H03F2203/45342H03F2203/45526
    • An amplifier circuit comprising an input stage comprising a first set of transistors (M5, M6) to which an input signal to be amplified is applied, the transistors of the first set comprising a semiconductor body, and a processing stage comprising a second set of transistors (M13,M14) for processing the signal from the input stage and generating an output signal (Vo). The transistors of the first set have a thicker gate oxide than the transistors of the second set, and are therefore suitable for higher voltage operation, and the first and second sets of transistors are supplied by the same voltage supply (VDD L ) of the amplifier circuit. This reduces the effect of gate leakage currents. The semiconductor body of the first set of transistors is connected to a reference potential (Vbulk) thereby to lower the threshold voltage. This enables the circuit to process a wider range of input signals.
    • 一种放大器电路,包括:输入级,包括被施加要被放大的输入信号的第一组晶体管(M5,M6),所述第一组晶体管包括半导体本体,以及处理级包括第二组晶体管 (M13,M14),用于处理来自输入级的信号并产生输出信号(Vo)。 第一组晶体管具有比第二组晶体管更厚的栅极氧化物,因此适用于更高电压操作,并且第一组晶体管和第二组晶体管由放大器电路的相同电压源(VDDL)供应 。 这减少了门漏电流的影响。 第一组晶体管的半导体本体连接到参考电位(Vbulk),从而降低阈值电压。 这使电路能够处理更宽范围的输入信号。