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1. 发明公开

EP2341557A2 Light emitting device, light emitting device package and lighting system 有权
标题翻译： Leuchtdiode，Leuchtdiodengehäuseund Beleuchtungssystem
公开(公告)号：EP2341557A2
公开(公告)日：2011-07-06
申请号：EP10196010.2
申请日：2010-12-20
申请人： LG Innotek Co., Ltd.
发明人： Hwang, Sung Min
IPC分类号： H01L33/14
CPC分类号： H01L33/14 , H01L27/15 , H01L33/0033 , H01L33/025 , H01L33/32 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer is partially exposed; a first region having a first concentration and provided at a region of the second conductive type semiconductor layer; a second region having a second concentration and provided at another region of the second conductive type semiconductor layer; and a second electrode over the second conductive type semiconductor layer.
摘要翻译：实施例涉及发光器件，发光器件封装和照明系统。发光装置包括：基板; 在所述基板上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电型半导体层和在所述第一导电类型半导体层和所述第二导电类型半导体层之间的有源层，其中所述第一导电型半导体层部分露出; 具有第一浓度并设置在第二导电型半导体层的区域的第一区域; 具有第二浓度并设置在所述第二导电类型半导体层的另一区域的第二区域; 以及位于第二导电类型半导体层上的第二电极。

2. 发明公开

EP0218422A2 Semiconductor light-emitting element 失效
标题翻译：半导体发光元件。
公开(公告)号：EP0218422A2
公开(公告)日：1987-04-15
申请号：EP86307386.2
申请日：1986-09-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Naito, Katsuyuki Patent Division K.K. Toshiba , Okamoto, Masayoshi Patent Division K.K. Toshiba , Mizushima, Koichi Patent Division K.K. Toshiba , Nakayama, Toshio Patent Division K.K. Toshiba , Sugiuchi, Masami Patent Division K.K. Toshiba , Miura, Akira Patent Division K.K. Toshiba
IPC分类号： H01L33/00
CPC分类号： H01L51/5012 , H01L33/0033 , H01L51/005 , H01L51/0052 , H01L51/0061 , H01L51/0065 , H01L51/0067 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0075
摘要： A semiconductor light-emitting element of a metal/organic film/semiconductor junction structure has a semiconductor layer (11), and an organic Langmuir-Blodgett thin film (13) formed on the semiconductor layer. The thin film (13) includes an electron donative organic monomolecular compound whose longest absorption peak wavelength in an electron transition spectrum falls within a range of 300 nm to 600 nm. A layer (14) of metallic material is formed on the thin film.

3. 发明授权

EP3096363B1 MICRO-LIGHT-EMITTING DIODE 有权
公开(公告)号：EP3096363B1
公开(公告)日：2018-12-05
申请号：EP16158015.4
申请日：2016-03-01
申请人： Mikro Mesa Technology Co., Ltd.
发明人： CHEN, Li-Yi , CHANG, Pei-Yu , CHAN, Chih-Hui , CHANG, Chun-Yi , LIN, Shih-Chyn , LEE, Hsin-Wei
IPC分类号： H01L33/14 , H01L25/075 , H01L33/00 , H01L23/00
CPC分类号： H01L33/145 , H01L24/83 , H01L33/0016 , H01L33/0033 , H01L2224/73104 , H01L2224/83001 , H01L2224/83191 , H01L2924/0002 , H01L2924/00
摘要： A micro-light-emitting diode (micro-LED) (100A) includes a first type semiconductor layer (122), a second type semiconductor layer (124), a first edge isolation structure (130), a first electrode (140), and a second electrode (150). The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer.

4. 发明授权

EP3100308B1 ELECTRIC FIELD CONTROL ELEMENT FOR PHONONS 有权
公开(公告)号：EP3100308B1
公开(公告)日：2018-05-23
申请号：EP15743731.0
申请日：2015-01-30
申请人： The Regents of the University of California
发明人： SCHEIBNER, Michael
IPC分类号： H01L49/00 , H01L29/872 , H01L29/12 , H01L29/16 , H01L33/00
CPC分类号： H01L49/006 , H01L29/127 , H01L29/16 , H01L29/20 , H01L29/475 , H01L29/66143 , H01L29/872 , H01L33/0033
摘要： Generally discussed herein are techniques for and systems and apparatuses configured to control phonons using an electric field. In one or more embodiments, an apparatus can include electrical contacts, two quantum dots embedded in a semiconductor such that when an electrical bias is applied to the electrical contacts, the electric field produced by the electrical bias is substantially parallel to an axis through the two quantum dots, and a phononic wave guide coupled to the semiconductor, the phononic wave guide configured to transport phonons therethrough.

5. 发明公开

EP2341557A3 Light emitting device, light emitting device package and lighting system 有权
标题翻译：一种发光器件，壳体发光器件和照明系统
公开(公告)号：EP2341557A3
公开(公告)日：2014-01-08
申请号：EP10196010.2
申请日：2010-12-20
申请人： LG Innotek Co., Ltd.
发明人： Hwang, Sung Min
IPC分类号： H01L33/14 , H01L27/15 , H01L33/02 , H01L33/00 , H01L33/32 , H01L33/40
CPC分类号： H01L33/14 , H01L27/15 , H01L33/0033 , H01L33/025 , H01L33/32 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer is partially exposed; a first region having a first concentration and provided at a region of the second conductive type semiconductor layer; a second region having a second concentration and provided at another region of the second conductive type semiconductor layer; and a second electrode over the second conductive type semiconductor layer.
摘要翻译：。实施例涉及一种发光器件，发光器件封装，以及照明系统的发光装置包括：基板; 在基板的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层，以及第一导电类型半导体层和第二导电类型半导体层之间的有源层上，worin第一导电型半导体层的一部分露出; 具有第一浓度，并且在第二导电类型半导体层的区域中的第一区域; 具有第二浓度，并且在第二导电类型半导体层的另一区域中设置的第二区域; 和所述第二导电型半导体层上的第二电极。

6. 发明公开

EP2339653A1 LIGHT EMITTING DEVICE, AND MANUFACTURING METHOD THEREOF 有权转让
标题翻译：发光装置及其制造方法
公开(公告)号：EP2339653A1
公开(公告)日：2011-06-29
申请号：EP09822135.1
申请日：2009-07-07
申请人： LG Innotek Co., Ltd
发明人： CHO, Hyun Kyong , PARK, Gyeong Geun , HWANG, Sung Min
IPC分类号： H01L33/36
CPC分类号： H01L33/14 , H01L33/0033 , H01L33/0079 , H01L33/32 , H01L33/382 , H01L33/40
摘要： A light emitting device according to an embodiment is provided. The light emitting device comprises a second electrode layer, a third conductive semiconductor layer comprising a schottky contact region and an ohmic contact region on the second electrode layer, a second conductive semiconductor layer on the third conductive semiconductor layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, and a first electrode layer on the first conductive semiconductor layer.
摘要翻译：提供根据实施例的发光器件。发光器件包括第二电极层，在第二电极层上的包括肖特基接触区和欧姆接触区的第三导电半导体层，在第三导电半导体层上的第二导电半导体层，在第二导电层上的有源层半导体层，在有源层上的第一导电半导体层以及在第一导电半导体层上的第一电极层。

7. 发明公开

EP1196954A4 VISIBLE LIGHT EMITTING DEVICE FORMED FROM WIDE BAND GAP SEMICONDUCTOR DOPED WITH A RARE EARTH ELEMENT 审中-公开
标题翻译：基于半导体宽带隙WHITE LIGHT DIODE掺杂有稀土类元素
公开(公告)号：EP1196954A4
公开(公告)日：2006-10-04
申请号：EP00923427
申请日：2000-04-17
申请人： UNIV CINCINNATI
发明人： BIRKHAHN RONALD H , CHAO LIANG-CHIUN , GARTER MICHAEL J , STECKL ANDREW J
IPC分类号： H01L33/00 , H01L33/32 , H01L33/34 , H01S3/16 , H01L31/0256 , H01S5/32
CPC分类号： H01L33/343 , H01L33/0033 , H01L33/325 , H01S3/16 , H01S3/1628

8. 发明授权

EP0195648B1 Diodes with chemically sensitive luminescence 失效
标题翻译：具有化学敏感性的二极管
公开(公告)号：EP0195648B1
公开(公告)日：1991-07-24
申请号：EP86301971.7
申请日：1986-03-18
申请人： MINNESOTA MINING AND MANUFACTURING COMPANY
发明人： Ellis, Arthur B. , Carpenter, Michael K.
IPC分类号： G01N21/84 , G01N21/62 , H01L33/00 , H05B33/14
CPC分类号： G01N21/643 , H01L33/0033

9. 发明公开

EP0218422A3 Semiconductor light-emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：EP0218422A3
公开(公告)日：1989-11-15
申请号：EP86307386.2
申请日：1986-09-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Naito, Katsuyuki Patent Division K.K. Toshiba , Okamoto, Masayoshi Patent Division K.K. Toshiba , Mizushima, Koichi Patent Division K.K. Toshiba , Nakayama, Toshio Patent Division K.K. Toshiba , Sugiuchi, Masami Patent Division K.K. Toshiba , Miura, Akira Patent Division K.K. Toshiba
IPC分类号： H01L33/00
CPC分类号： H01L51/5012 , H01L33/0033 , H01L51/005 , H01L51/0052 , H01L51/0061 , H01L51/0065 , H01L51/0067 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0075
摘要： A semiconductor light-emitting element of a metal/organic film/semiconductor junction structure has a semiconductor layer (11), and an organic Langmuir-Blodgett thin film (13) formed on the semiconductor layer. The thin film (13) includes an electron donative organic monomolecular compound whose longest absorption peak wavelength in an electron transition spectrum falls within a range of 300 nm to 600 nm. A layer (14) of metallic material is formed on the thin film.

10. 发明公开

EP0195648A2 Diodes with chemically sensitive luminescence 失效
标题翻译：二极管与化学敏感发光。
公开(公告)号：EP0195648A2
公开(公告)日：1986-09-24
申请号：EP86301971.7
申请日：1986-03-18
申请人： MINNESOTA MINING AND MANUFACTURING COMPANY
发明人： Ellis, Arthur B. , Carpenter, Michael K.
IPC分类号： G01N21/84 , G01N21/62 , H01L33/00 , H05B33/14
CPC分类号： G01N21/643 , H01L33/0033
摘要： The presence of certain chemicals on the emitting surface of the palladium coated photoluminescent semiconductor alters the characteristics of radiation emitted from said surface. This alteration is used to indicate the presence of those chemicals in the environment.

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