发明公开
EP1196954A1 VISIBLE LIGHT EMITTING DEVICE FORMED FROM WIDE BAND GAP SEMICONDUCTOR DOPED WITH A RARE EARTH ELEMENT
审中-公开
基本信息:
- 专利标题： VISIBLE LIGHT EMITTING DEVICE FORMED FROM WIDE BAND GAP SEMICONDUCTOR DOPED WITH A RARE EARTH ELEMENT
- 专利标题（中）：基于半导体宽带隙WHITE LIGHT DIODE掺杂有稀土类元素
- 申请号：EP00923427.9 申请日：2000-04-17
- 公开(公告)号：EP1196954A1 公开(公告)日：2002-04-17
- 发明人： BIRKHAHN, Ronald, H. , CHAO, Liang-Chiun , GARTER, Michael, J. , STECKL, Andrew, J.
- 申请人： University of Cincinnati
- 申请人地址： 2624 Clifton Avenue Cincinnati, OH 452221-0623 US
- 专利权人： University of Cincinnati
- 当前专利权人： University of Cincinnati
- 当前专利权人地址： 2624 Clifton Avenue Cincinnati, OH 452221-0623 US
- 代理机构： Findlay, Alice Rosemary
- 优先权： US299186 19990423
- 国际公布： WO0065666 20001102
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L31/0256 ; H01S5/32
摘要：
A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.