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1. 发明公开

EP1341718A1 PROCEDE ET DISPOSITIF DE DEPOT PAR PLASMA A LA RESONANCE CYCLOTRON ELECTRONIQUE DE NANOTUBES DE CARBONE MONOPAROIS ET NANOTUBES AINSI OBTENUS 有权
标题翻译：方法和装置等离子，申请ECR壁碳纳米管和碳纳米管GOT
公开(公告)号：EP1341718A1
公开(公告)日：2003-09-10
申请号：EP01982567.8
申请日：2001-10-26
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： DELAUNAY, Marc , VANNUFFEL, Cyril
IPC分类号： C01B31/02 , C23C16/26 , H05H1/24 , C01B3/00
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B3/0021 , C01B32/16 , C01B2202/02 , C30B25/105 , C30B29/605 , C30B29/66 , F17C11/005 , H01J9/025 , H01J37/32192 , H01J37/32678 , H01J2201/30469 , H01J2209/0223 , H05H1/46 , Y02E60/321 , Y02E60/325
摘要： The invention concerns an electronic cyclotron resonance plasma deposit of single-wall carbon nanotubes, on a catalyst-free substrate, by microwave power injection into a deposit chamber comprising a magnetic confinement structure with magnetic mirror, and at least an electronic cyclotron resonance zone right inside or bordering said deposit chamber and facing said substrate, whereby, under pressure less than 10-3 mbar, a carbon-containing gas in the magnetic mirror at the centre of the deposit chamber is dissociated and/or ionised, producing species which are deposited on said substrate which is heated; method wherein the substrate has protrusions and/or recesses. The invention also concerns the resulting single-wall nanotubes (SWNT).

2. 发明授权

EP0309540B1 AN APPARATUS AND PROCESS FOR EDGE-DEFINED, FILM-FED CRYSTAL GROWTH 失效
标题翻译：边缘定义的电影晶体生长的装置和方法
公开(公告)号：EP0309540B1
公开(公告)日：1993-10-06
申请号：EP88903514.3
申请日：1988-03-07
申请人： MOBIL SOLAR ENERGY CORPORATION
发明人： HARVEY, David, S.
IPC分类号： C30B15/34
CPC分类号： C30B15/34 , C30B15/00 , C30B29/66
摘要： An apparatus and process are disclosed for growing tubular crystalline bodies according to the Edge defined, Film-Fed Growth (EFG) process, wherein the apparatus has at least one exterior passage (240) and at least one interior passage formed (245) in its crucible die assembly (200) and associated parts, whereby gases introduced into at least one exterior passage (725) will be delivered to the zone located outside the growing crystalline body (900) (i.e. the ''exterior'' zone) adjacent to the growth face on the die member (215), and gases introduced into the at least one interior passage (720) will be delivered to the zone located inside of the hollow crystalline body (i.e. the ''interior'' zone) adjacent to the growth face on the die member, whereby the atmosphere in each of the zones may be separately controlled.

3. 发明公开

EP0290628A4 ANORDNUNG ZUR ZÜCHTUNG PROFILIERTER MONOKRISTALLE. 失效
标题翻译：安排育种MONO型材晶体。
公开(公告)号：EP0290628A4
公开(公告)日：1989-03-23
申请号：EP88900260
申请日：1987-10-23
申请人： VNI PK I T I ELEKTROTERMICHESK
发明人： KRAVETSKY DMITRY YAKOVLEVICH , ZATULOVSKY LEV MARKOVICH , EGOROV LEONID PETROVICH , PELTS BORIS BENTSIONOVICH , OKUN LEONID SAMUILOVICH , AVERYANOV VIKTOR VASILIEVICH , FREIMAN EFIM ALEXANDROVICH , ALISHOEV ALEXANDR LVOVICH
IPC分类号： C30B15/34 , C30B15/00 , C30B29/60 , C30B35/00
CPC分类号： C30B15/34 , C30B15/00 , C30B29/66 , Y10T117/104 , Y10T117/1068
摘要： A method of growing profiled monocrystals of optically transparent refractory metallic compounds consists in melting the initial material, with the heat released from a heater, in an inert gas atmosphere; continuously feeding the melt (12) from the melting zone to the crystallization zone (16) through the capillary system of a shaper (4); drawing the monocrystal (3) from the crystallization zone (16) and cooling it. Before the melting of the initial material a test particle of the latter is placed in the crystallization zone (16) and the heating power P of the heater (7) is measured at the moment of melting the particle. The melting of the initial material is carried out at a power of 1.04-1.1 P of the heater (7), the melting of the seed (14) - at a power of 1.03-1.08 P, the growing of the monocrystal (3) - at a power of 1.02-1.08 P and its drawing - at a power of 1.02-1.22 P.

4. 发明公开

EP0290629A1 ANORDNUNG ZUR ZÜCHTUNG PROFILIERTER MONOKRISTALLE 无效
标题翻译：安排育种MONO型材晶体。
公开(公告)号：EP0290629A1
公开(公告)日：1988-11-17
申请号：EP88900261.4
申请日：1987-10-23
申请人： VSESOJUZNY NAUCHNO-ISSLEDOVATELSKY PROEKTNO-KONSTRUKTORSKY I TEKHNOLOGICHESKY INST. ELEKTROTERMICHESKOGO OBORUDOVANIA VNIIETO
发明人： KRAVETSKY, Dmitry Yakovlevich , ZATULOVSKY, Lev Markovich , EGOROV, Leonid Petrovich , PELTS, Boris Bentsionovich , OKUN, Leonid Samuilovich , AVERIANOV, Viktor Vasilievich , FREIMAN, Efim Alexandrovich , ALISHOEV, Alexandr Lvovich
IPC分类号： C30B15/34
CPC分类号： C30B15/34 , C30B15/00 , C30B29/66 , Y10T117/104 , Y10T117/1068
摘要： Vorrichtung zur Züchtung von profilierten Einkristallen aus schwerschmelzbaren, optisch durchsichtigen Metallverbindungen enthält eine luftdichte Kammer (1), in deren Innerem ein Wärmeisolationsblock (2) mit einem die Form eines Bechers aufweisenden Heizkörper (3) untergebracht ist, der in seinem Inneren einen unter Ermöglichung dessen Hin-und Herverstellung längs der Bechersachse montierten Tiegel (5), einen Formengeber (6) als Zylinder mit den durchgehenden Kapillarbohrungen zur Zufuhr der Schmelze (11) aus dem Tiegel (5) in die Kristallisationszone (14) des Einkristalls (7) gestaltet, die über dem oberen Stirnende (13) des Formengebers (6) liegt, welches Stirnende die Querschnittsform des Einkristalls (7) aufweist.
Innerhalb des Heizkörpers (3) sind noch die flachen, waagerechtliegenden Wärmeschutzschilder (23) mit koaxialangeordneten Öffnungen (25) zum Durchgang des zu züchtenden Einkristalls (7) untergebracht, in denen ein in Form von Hohlzylinder ausgeführter Wärmeschutzschild (24) zu diesen koaxial eingebaut ist.

5. 发明公开

EP3389905A1 METHOD FOR THE SYNTHESIS OF METAL NANOPARTICLES IN AQUEOUS ENVIRONMENT WITHOUT THE USE OF SHAPE DIRECTING AGENTS 有权
公开(公告)号：EP3389905A1
公开(公告)日：2018-10-24
申请号：EP16822540.7
申请日：2016-12-14
申请人： Fondazione Istituto Italiano di Tecnologia
发明人： MOGLIANETTI, Mauro , POMPA, Pier Paolo
IPC分类号： B22F9/24 , C30B29/60 , C30B7/14 , B22F1/00
CPC分类号： B22F9/24 , B22F1/0018 , B22F2001/0037 , B22F2301/25 , B22F2304/054 , B22F2998/00 , B82Y40/00 , C30B7/14 , C30B29/02 , C30B29/60 , C30B29/66
摘要： The present disclosure relates to a seed-growth based method for the synthesis of metal nanoparticles of controlled shape (cubes, cuboids, octahedrons) and size in an aqueous environment, without the use of shape directing agents. The method involves a first step of preparing a solution comprising water, metal seed growth nanoparticles, a metal salt comprising the same metal as the metal seed growth nanoparticles, and a reducing agent; and a second step of heating the solution to between 9 and 130° C. at a rate of between 1° C./min and 5° C./min and at a pressure of between 1 and 5 atm. The method may also be carried out in a reduced oxygen atmosphere and the concentration of oxygen disclosed in the solution may be less than the concentration of oxygen in an oxygen saturated solution.

6. 发明公开

EP3113210A4 CALCIUM FLUORIDE OPTICAL MEMBER, MANUFACTURING METHOD THEREFOR, GAS-HOLDING CONTAINER, AND LIGHT SOURCE DEVICE 有权
公开(公告)号：EP3113210A4
公开(公告)日：2017-11-22
申请号：EP15755919
申请日：2015-02-27
申请人： NIPPON KOGAKU KK
发明人： UEHARA NAOYASU , KAGEYAMA MOTOFUSA
IPC分类号： H01J61/30 , H01J9/24
CPC分类号： H01J61/302 , B65D51/248 , C01F11/22 , C30B29/12 , C30B29/66 , H01J9/247
摘要： Provided is a CaF2 monocrystalline optical member reliably usable even at a high temperature and under a high pressure. A calcium fluoride optical member (1) is formed of monocrystalline calcium fluoride and has a tubular shape. A {110} crystal plane or a {111} crystal plane of the monocrystalline calcium fluoride is orthogonal to the center axis (A) of the tube.

7. 发明公开

EP3113210A1 CALCIUM FLUORIDE OPTICAL MEMBER, MANUFACTURING METHOD THEREFOR, GAS-HOLDING CONTAINER, AND LIGHT SOURCE DEVICE 有权
标题翻译：优质钙血红素，HERSTELLUNGSVERFAHRENDAFÜR，GASBEHÄLTERUND LICHTQUELLENVORRICHTUNG
公开(公告)号：EP3113210A1
公开(公告)日：2017-01-04
申请号：EP15755919.6
申请日：2015-02-27
申请人： Nikon Corporation
发明人： UEHARA, Naoyasu , KAGEYAMA, Motofusa
IPC分类号： H01J61/30 , H01J9/24
CPC分类号： H01J61/302 , B65D51/248 , C01F11/22 , C30B29/12 , C30B29/66 , H01J9/247
摘要： Provided is a CaF2 monocrystalline optical member reliably usable even at a high temperature and under a high pressure. A calcium fluoride optical member (1) is formed of monocrystalline calcium fluoride and has a tubular shape. A {110} crystal plane or a {111} crystal plane of the monocrystalline calcium fluoride is orthogonal to the center axis (A) of the tube.
摘要翻译：提供即使在高温高压也可靠地使用的CaF 2单晶光学构件。氟化钙光学构件（1）由单晶氟化钙形成并且具有管状形状。单晶氟化钙的{110}晶面或{111}晶面垂直于管的中心轴线（A）。

8. 发明公开

EP2826748A4 POLYCRYSTALLINE SILICON ROD 审中-公开
标题翻译：多晶硅ブ
公开(公告)号：EP2826748A4
公开(公告)日：2016-03-16
申请号：EP13760309
申请日：2013-02-27
申请人： TOKUYAMA CORP
发明人： ISHIDA HARUYUKI , IMURA TETSUYA , AIMOTO YASUMASA
IPC分类号： C01B33/035 , C30B29/60
CPC分类号： C30B29/66 , C01B33/035 , C30B11/02 , C30B15/00 , C30B29/06 , C30B29/607 , Y10T428/12674
摘要： [Problem] To provide a polycrystalline silicon rod that requires little energy for melting and that can contribute to reduced energy costs when used as a silicon single-crystal manufacturing material or casting method silicon ingot manufacturing material. [Solution] This polycrystalline silicon rod is formed of polycrystalline silicon deposited radially around a silicon core line and is characterized by, in a cross-section that is a perpendicular cut in respect to the axial direction of a cylindrical rod, the ratio of surface area covered by coarse crystal particles having a diameter of 50µm or greater is 20% or more of the crystal observed at the face, excluding the core line portion.

9. 发明公开

EP0309540A4 AN APPARATUS AND PROCESS FOR EDGE-DEFINED, FILM-FED CRYSTAL GROWTH. 失效
标题翻译： VORRICHTUNG UND VERFAHRENFÜRKANTENBESTIMMTES SCHMELZFILMBESCHICKTES KRISTALLZIEHEN。
公开(公告)号：EP0309540A4
公开(公告)日：1989-07-18
申请号：EP88903514
申请日：1988-03-07
申请人： MOBIL SOLAR ENERGY CORP
发明人： HARVEY DAVID S
IPC分类号： C30B15/00 , C30B15/34 , H01L21/208
CPC分类号： C30B15/34 , C30B15/00 , C30B29/66
摘要： An apparatus and process are disclosed for growing tubular crystalline bodies according to the Edge defined, Film-Fed Growth (EFG) process, wherein the apparatus has at least one exterior passage (240) and at least one interior passage formed (245) in its crucible die assembly (200) and associated parts, whereby gases introduced into at least one exterior passage (725) will be delivered to the zone located outside the growing crystalline body (900) (i.e. the ''exterior'' zone) adjacent to the growth face on the die member (215), and gases introduced into the at least one interior passage (720) will be delivered to the zone located inside of the hollow crystalline body (i.e. the ''interior'' zone) adjacent to the growth face on the die member, whereby the atmosphere in each of the zones may be separately controlled.
摘要翻译：公开了一种装置和方法，用于根据边缘定义的膜供料生长（EFG）工艺生长管状结晶体，其中所述装置具有至少一个外部通道（240）和至少一个形成在其中的内部通道（245）坩埚模头组件（200）和相关部件，由此引入至少一个外部通道（725）的气体将被输送到位于生长结晶体（900）外部的区域（即，“外部”区域）（215）上的生长面，并且引入到至少一个内部通道（720）中的气体将被输送到位于与生长相邻的中空结晶体（即“内部”区域）内部的区域面对模具构件，由此可以分别控制每个区域中的气氛。

10. 发明公开

EP0290629A4 ANORDNUNG ZUR ZÜCHTUNG PROFILIERTER MONOKRISTALLE. 无效
标题翻译： ANORDNUNG ZURZÜCHTUNGPROFILIERTER MONOKRISTALLE。
公开(公告)号：EP0290629A4
公开(公告)日：1989-03-22
申请号：EP88900261
申请日：1987-10-23
申请人： VNI PK I T I ELEKTROTERMICHESK
发明人： KRAVETSKY DMITRY YAKOVLEVICH , ZATULOVSKY LEV MARKOVICH , EGOROV LEONID PETROVICH , PELTS BORIS BENTSIONOVICH , OKUN LEONID SAMUILOVICH , AVERIANOV VIKTOR VASILIEVICH , FREIMAN EFIM ALEXANDROVICH , ALISHOEV ALEXANDR LVOVICH
IPC分类号： C30B15/34 , C30B15/00 , C30B29/60 , C30B35/00
CPC分类号： C30B15/34 , C30B15/00 , C30B29/66 , Y10T117/104 , Y10T117/1068
摘要： A device for growing profiled monocrystals of optically transparent refractory metallic compounds comprises a sealed chamber (1) containing a thermo-insulating unit (2) with a heater (3) shaped as a sleeve inside which a crucible (5) is mounted reciprocally movable along the axis of the sleeve and a shaper (6) consisting of a cylinder provided with capillary openings for feeding the melt (11) from the crucible (5) to the crystallization zone (14) of the monocrystal (7), located above the upper face-end (13) of the shaper (6), the cross-section form of which corresponds to that of the monocrystal (7). The heater (3) contains flat horizontal heat shields (23) with coaxial openings (25) for the passage of the monocrystal (7), in which is coaxially mounted a heat shield (24) shaped as a hollow cylinder.
摘要翻译：一种用于生长光学透明的难熔金属化合物异型单晶的装置包括：密封室（1），其包含具有形状为套筒的加热器（3）的热绝缘单元（2），坩埚（5）安装在套筒内，所述套筒的轴线和由圆筒构成的成形器（6），所述圆筒设置有用于将来自坩埚（5）的熔体（11）供给到单晶（7）的结晶区（14）的毛细开口，整形器（6）的端面（13），其截面形式与单晶（7）的截面形式相对应。加热器（3）包含具有用于单晶体（7）通过的同轴开口（25）的扁平水平隔热屏（23），其中同轴安装有成形为中空圆柱体的隔热屏（24）。

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