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1. 发明公开

EP3173703A1 PRE-HEATING THERMAL STORE 审中-公开
标题翻译：预加热热储存
公开(公告)号：EP3173703A1
公开(公告)日：2017-05-31
申请号：EP15196847.6
申请日：2015-11-27
申请人： Sharp Kabushiki Kaisha
发明人： TOMLIN, Michael Charles , DIMMOCK, James Andrew Robert , BARRETT, Jacob Thomas
IPC分类号： F24D17/02 , F24D17/00
CPC分类号： F24D17/02 , F24D17/0021 , F24D17/0073 , F24D2220/08 , F28D1/0408 , F28D1/0472 , F28D20/0039 , F28D2020/0078 , F28D2020/0082 , Y02E60/142
摘要： A heating system for heating and supplying a supply fluid has a heat source (1) and first and second heat stores (7, 4) connected in series with the heat source. In a first mode of operation, a process fluid is circulated from the heat source (1) through, sequentially, the first heat store (7) and then the second heat store (4). The second heat store (4) comprises a body, and at least first one heat exchanger (6) associated with the body for receiving supply fluid. The first heat store (7) comprises a body for receiving supply fluid from the second heat store for heating by process fluid received at the first store (7) from the heat source (1).
The second heat store acts to pre-heat incoming supply fluid. However, arranging for the incoming supply fluid to pass through a heat exchanger thermally associated with the body of the second heat store means that providing the second heat store results in only a slight increase in the amount of supply fluid stored in the heating system store - and so results in only a slight increase in the amount of supply fluid that must be heated to pasteurise the stored supply fluid.
摘要翻译：用于加热和供应供应流体的加热系统具有热源（1）以及与热源串联连接的第一和第二储热器（7,4）。在第一种操作模式中，过程流体从热源（1）依次循环通过第一储热库（7）和第二储热库（4）。第二热存储器（4）包括主体以及与用于接收供应流体的主体相关联的至少第一热交换器（6）。第一储热器（7）包括用于接收来自第二储热器的供应流体的主体，用于通过在第一储存器（7）处接收的来自热源（1）的过程流体进行加热。第二个储热库用于预热进入的供应流体。然而，设置输入供应流体流过与第二热存储装置的主体热关联的热交换器，即提供第二热存储器导致存储在加热系统存储器中的供应流体的量仅略微增加 - 因此导致必须加热的供应流体的量仅略微增加以巴氏杀菌存储的供应流体。

2. 发明公开

EP3246950A1 BALLISTIC CARRIER SPECTRAL SENSOR 审中-公开
标题翻译：弹道载波频谱传感器
公开(公告)号：EP3246950A1
公开(公告)日：2017-11-22
申请号：EP17172004.8
申请日：2017-05-19
申请人： Sharp Kabushiki Kaisha
发明人： GALLARDO, Diego , DIMMOCK, James Andrew Robert , KAUER, Matthias , BERRYMAN-BOUSQUET, Valerie
IPC分类号： H01L27/146 , G01J3/28
CPC分类号： G01J3/2803 , H01L27/14621 , H01L27/14647 , H01L27/14681 , H01L31/022491 , H01L31/035209 , H01L31/035236 , H01L31/0543 , H01L31/055 , H01L31/11
摘要： A ballistic carrier spectral sensor includes a photon absorption region to generate photo-generated carriers from incident light; a first potential barrier region adjacent the photon absorption region and having an adjustable height defining a minimum energy of the photo-generated carriers required to pass therethrough; a second potential barrier region having an adjustable height defining a minimum energy of the photo-generated carriers required to pass therethrough; a spillage well region disposed between the first potential barrier region and the second potential barrier region and configured to collect photo-generated carriers having an energy lower than that required to pass through the second potential barrier region; and a collection region adjacent the second potential barrier region and configured to collect carriers that cross the second potential barrier region. A total thickness of the first potential barrier region and the spillage well region is less than a mean free path of the photo-generated carriers.
摘要翻译：一种弹道载波光谱传感器包括：光子吸收区域，用于从入射光产生光生载流子; 第一势垒区域，与光子吸收区域相邻并具有可调整的高度，从而限定穿过其中所需的光生载流子的最小能量; 具有可调高度的第二势垒区域，其限定了穿过其中所需的光生载流子的最小能量; 溢出阱区域，所述溢出阱区域设置在所述第一势垒区域和所述第二势垒区域之间，并被配置为收集能量低于穿过所述第二势垒区域所需能量的光生载流子; 以及与第二势垒区域相邻并被配置为收集与第二势垒区域交叉的载流子的收集区域。第一势垒区域和溢出阱区域的总厚度小于光生载流子的平均自由路径。

3. 发明公开

EP3301728A1 ENERGY SELECTIVE PHOTODETECTOR 审中-公开
标题翻译：能量选择性光电探测器
公开(公告)号：EP3301728A1
公开(公告)日：2018-04-04
申请号：EP17183442.7
申请日：2017-07-27
申请人： Sharp Kabushiki Kaisha
发明人： DIMMOCK, James Andrew Robert , KAUER, Matthias , EKINS-DAUKES, Nicholas J. , STAVRINOU, Paul N.
IPC分类号： H01L31/108
CPC分类号： H01L31/035227 , H01L31/02 , H01L31/02161 , H01L31/02168 , H01L31/022408 , H01L31/022425 , H01L31/02327 , H01L31/03046 , H01L31/035209 , H01L31/07 , H01L31/108 , H01L31/1085 , Y02E10/50
摘要： A semiconductor device has a layered structure. The semiconductor device includes a metallic layer of thickness 1-100nm, with a thickness optimised to absorb light in a wavelength range of operation. The device further includes an adjacent semiconductor layer additionally adjacent to an ohmic electrical contact, wherein the interface between the metallic layer and the semiconductor layer is electrically rectifying and energy selective. The device further includes a reflective back surface positioned opposite to the semiconductor layer relative to incident light providing broadband reflection in the wavelength range of operation. The semiconductor layer includes a quantum well adjacent to the metallic layer, wherein the energy selectivity is provided by the quantum well allowing charge carrier tunneling from the metallic layer. The device further may include an additional anti-reflection dielectric layer deposited on the metallic layer that is configured to minimise reflection of light in the wavelength range of operation.
摘要翻译：半导体器件具有分层结构。该半导体器件包括厚度为1-100nm的金属层，其厚度被优化以吸收在工作波长范围内的光。该器件还包括附加的与欧姆电触点相邻的半导体层，其中金属层和半导体层之间的界面是电整流和能量选择性的。该器件还包括反射后表面，该反射后表面相对于在工作的波长范围内提供宽带反射的入射光定位在半导体层的对面。半导体层包括与金属层相邻的量子阱，其中能量选择性由量子阱提供，允许电荷载流子从金属层隧穿。该器件还可以包括沉积在金属层上的附加抗反射介电层，该附加抗反射介电层被配置成使波长范围内的光的反射最小化。

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