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1. 发明公开

EP3411513A1 VERFAHREN ZUM ABSCHEIDEN EINER CDTE-SCHICHT AUF EINEM SUBSTRAT 有权转让
公开(公告)号：EP3411513A1
公开(公告)日：2018-12-12
申请号：EP17703720.7
申请日：2017-02-03
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. , CTF Solar GmbH
发明人： MORGNER, Henry , METZNER, Christoph , HIRSCH, Daniel , ZYWITZKI, Olaf , DECKER, Ludwig , WERNER, Torsten , SIEPCHEN, Bastian , SPÄTH, Bettina , VELAPPAN, Krishnakumar , KRAFT, Christian , DROST, Christian
IPC分类号： C23C14/06 , C23C14/02 , C23C14/56 , H01L31/0296 , H01L31/20 , C23C14/00 , C23C16/30
CPC分类号： C23C14/0629 , C23C14/0021 , C23C14/02 , C23C14/562 , C23C16/306 , H01L31/02963 , H01L31/206
摘要： The invention relates to a method for depositing a CdTe layer on a substrate (2) in a vacuum chamber (1) by means of physical gas phase deposition, in which the substrate (2) is heated to a coating temperature before the deposition process and then guided past a vessel (3) in which CdTe (4) is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet (5), against the substrate (2) surface to be coated, such that the gaseous component is adsorbed on the substrate (2) surface to be coated before the substrate (2) is guided past the at least one vessel (3).

2. 发明公开

EP3001881A1 PHOTOVOLTAIC DEVICES AND METHODS FOR MAKING THE SAME 有权
标题翻译：照片VERFAHREN ZUR HERSTELLUNG DAVON
公开(公告)号：EP3001881A1
公开(公告)日：2016-04-06
申请号：EP14800780.0
申请日：2014-06-06
申请人： First Solar Malaysia SDN.BHD
发明人： KOREVAAR, Bastiaan, Arie , HUANG, Qunjian , JIN, Yiteng , XIN, Qianqian
IPC分类号： H01L31/0352
CPC分类号： H01L31/0336 , H01L31/022441 , H01L31/022466 , H01L31/02963 , H01L31/03925 , H01L31/068 , H01L31/1828 , H01L31/1864 , H01L31/1884 , Y02E10/547
摘要： A photovoltaic device includes a support layer; a first layer comprising cadmium, tellurium and copper and being of n-type; a second layer comprising cadmium, tellurium and copper and being of p-type; and a transparent conductive oxide layer. A method for making a photovoltaic device includes providing a stack comprising a cadmium and tellurium comprising layer and a copper comprising layer on the cadmium and tellurium comprising layer; and thermally annealing the stack to form a first layer and a second layer each comprising cadmium, tellurium and copper, the first layer being of n-type, the second layer being of p-type.
摘要翻译：光伏器件包括支撑层; 包含镉，碲和铜并且是n型的第一层; 包含镉，碲和铜并且为p型的第二层; 和透明导电氧化物层。制造光伏器件的方法包括在镉和碲包含层上提供包含镉和碲的层和包含铜的层的叠层; 以及对所述堆叠进行热退火以形成第一层和每个包括镉，碲和铜的第二层，所述第一层为n型，所述第二层为p型。

3. 发明授权

EP2383363B1 Cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices and method of their manufacture 有权
标题翻译：在碲化镉使用硫化镉层系薄膜光伏器件及其制造方法
公开(公告)号：EP2383363B1
公开(公告)日：2016-01-13
申请号：EP11163296.4
申请日：2011-04-20
申请人： First Solar Malaysia SDN.BHD
发明人： Gossman, Robert Dwayne , Pavol, Mark Jeffrey
IPC分类号： C23C14/06 , C23C14/34 , H01L31/0296 , H01L31/18 , H01L31/073
CPC分类号： C23C14/34 , C23C14/0629 , H01L31/0296 , H01L31/02963 , H01L31/073 , H01L31/1828 , H01L31/1836 , Y02E10/543 , Y02P70/521

4. 发明公开

EP2704206A3 Photovoltaic devices 审中-公开
标题翻译：光伏设备
公开(公告)号：EP2704206A3
公开(公告)日：2015-09-23
申请号：EP13181235.6
申请日：2013-08-21
申请人： First Solar Malaysia SDN.BHD
发明人： Foust, Donald Franklin , Cao, Hongbo , Clark, Laura Anne , Garber, Robert Andrew , Feldman-Peabody, Scott Daniel , Metzger, Wyatt Keith , Shan, Yinghui , Shuba, Roman
IPC分类号： H01L31/0296 , H01L31/0392 , H01L31/073
CPC分类号： H01L31/02963 , H01L31/03925 , H01L31/073 , Y02E10/543
摘要： Photovoltaic devices 100 are presented. A photovoltaic device 100 includes a window layer 120 and a semiconductor layer 110 including a semiconductor material disposed on window layer 120. The semiconductor layer 110 includes a first region 112 and a second region 114, the first region 112 disposed proximate to the window layer 120, and the second region 114 including a chalcogen-rich region, wherein the first region 112 and the second region 114 include a dopant, and an average atomic concentration of the dopant in the second region 114 is greater than an average atomic concentration of the dopant in the first region 112.

5. 发明公开

EP2849233A1 Solar cell 审中-公开
标题翻译：太阳能电池
公开(公告)号：EP2849233A1
公开(公告)日：2015-03-18
申请号：EP14184547.9
申请日：2014-09-12
申请人： Sanyo Electric Co., Ltd.
发明人： Narita, Tomoki
IPC分类号： H01L31/0224 , H01L31/0747
CPC分类号： H01L31/02963 , H01L31/022483 , H01L31/03762 , H01L31/056 , H01L31/0747 , Y02E10/50
摘要： A solar cell includes: a crystalline silicon substrate of one conductivity type including a first principal surface, and a second principal surface provided on an opposite side from the first principal surface; a first amorphous silicon layer of the other conductivity type provided on the first principal surface side; a second amorphous silicon layer of the one conductivity type provided on the second principal surface side; a contact layer in contact with the second amorphous silicon layer; a magnesium-doped zinc oxide layer in contact with the contact layer; a first electrode layer provided on the first amorphous silicon layer; and a second electrode layer provided on the magnesium-doped zinc oxide layer. A lattice constant of the contact layer is within a range of plus or minus 30% relative to a lattice constant of the magnesium-doped zinc oxide layer.
摘要翻译：一种太阳能电池，包括：一种导电类型的晶体硅基板，其包括第一主表面和设置在所述第一主表面的相反侧上的第二主表面; 设置在第一主面侧的另一导电型的第一非晶硅层，设置在第二主面侧的一种导电型的第二非晶硅层，与第二非晶硅层接触的接触层; 与接触层接触的镁掺杂氧化锌层; 设置在第一非晶硅层上的第一电极层; 以及设置在镁掺杂氧化锌层上的第二电极层。接触层的晶格常数相对于镁掺杂氧化锌层的晶格常数在正负30％的范围内。

6. 发明公开

EP2803078A1 METHOD AND SYSTEM OF PROVIDING DOPANT CONCENTRATION CONTROL IN DIFFERENT LAYERS OF A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：方法和系统的掺杂浓度控制的半导体部件几层
公开(公告)号：EP2803078A1
公开(公告)日：2014-11-19
申请号：EP13700831.4
申请日：2013-01-11
申请人： First Solar, Inc
发明人： XIONG, Gang , POWELL, Rick, C. , PENG, Xilin , BARDEN, John , ALLENIC, Arnold , LIAO, Feng , RING, Kenneth, M.
IPC分类号： H01L21/02 , H01L21/365
CPC分类号： H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
摘要： A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

7. 发明公开

EP2337088A2 Method of p-type doping of cadmium telluride 审中-公开
标题翻译： Verfahren zur p-leitenden Dotierung von Cadmiumtellurid
公开(公告)号：EP2337088A2
公开(公告)日：2011-06-22
申请号：EP10194269.6
申请日：2010-12-09
申请人： General Electric Company
发明人： Deluca, John Anthony , Feldman-Peabody, Scott
IPC分类号： H01L31/18
CPC分类号： H01L31/1828 , H01L31/02963 , H01L31/02966 , H01L31/073 , H01L31/1832 , H01L31/1836 , Y02E10/543 , Y02P70/521
摘要： A method of p-type doping cadmium telluride (CdTe) is disclosed. The method comprising the steps of, (a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region, and (b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of a first material comprising a p-type dopant, and of a second material comprising a halogen. A method of making a photovoltaic cell is also disclosed.
摘要翻译：公开了一种p型掺杂碲化镉（CdTe）的方法。该方法包括以下步骤：（a）提供包含界面区的碲化镉（CdTe）的第一组分，和（b）使CdTe进行官能化处理以获得p型掺杂的CdTe，所述官能化处理包括热在包含p型掺杂剂的第一材料和包含卤素的第二材料的存在下处理至少一部分界面区域。还公开了制造光伏电池的方法。

8. 发明公开

EP2124259A2 Cd(Zn)Te basiertes Strahlungswandlermaterial und dessen Verwendung insbesondere für die Röntgen-Computertomografie, Strahlungswandler sowie Strahlungsdetektor und Röntgen-Computertomograf 审中-公开
标题翻译：镉（Zn）的Te基辐射转换材料及其在特定用途的X射线计算机断层扫描，辐射转换器和辐射探测器和X射线计算机断层摄影
公开(公告)号：EP2124259A2
公开(公告)日：2009-11-25
申请号：EP08015002.2
申请日：2008-08-25
申请人： Siemens Aktiengesellschaft
发明人： Hackenschmied, Peter, Dr. , Kuhn, Harald, Dr. , Strassburg, Matthias, Dr.
IPC分类号： H01L31/0296 , H01L31/18 , H01L27/146
CPC分类号： H01L31/1828 , H01L27/14658 , H01L31/02963 , H01L31/02966 , H01L31/1832 , Y02E10/543
摘要： Die Erfindung betrifft insbesondere ein Strahlungswandlermaterial (10) für die Röntgen-Computertomografie, zur direkten Wandlung von Röntgenstrahlung (R) in elektrische Ladungsträger, umfassend ein dotiertes Halbleitermaterial. Zur Verbesserung der Detektionseffizienz für hohe Quantenflussraten wird vorgeschlagen, dass das Halbleitermaterial dotiert ist mit zumindest einem der folgenden ersten Dotanden Os, Ru, Ir, Rh, Re, Pd, Fe, Ni, Co, zumindest einem der folgenden zweiten Dotanden O, S, Se und mit zumindest einem der folgenden dritten Dotanden B, Al, Ga, In, Tl.
摘要翻译：碲化镉锌基于辐射转换器材料包括的元素的基础上的二进制或叔半导体材料：如镉，碲，镉，锌和碲。因此，该半导体材料被赋予了从锇，钌，铱，铼，铑，钯，铁，镍或钴中选择的掺杂剂，从组中选择的选自氧，硫或硒，和第三掺杂剂选择的另一掺杂剂的III族元素元素周期表。一个独立的claimsoft被包括为用于产生辐射转换器，使用通过化学汽相沉积由辐射转换器材料，金属有机气相外延，金属有机化学气相沉积，原子层外延，分子束外延，行进加热器方法涉及一种方法，traveling- 溶剂法，布里奇曼法，高压布里奇曼或气相外延工艺。

9. 发明公开

EP1859487A2 PHOTOVOLTAISCHE ZELLE MIT EINEM DARIN ENTHALTENEN PHOTOVOLTAISCH AKTIVEN HALBLEITERMATERIAL 审中-公开
标题翻译：与被包含的光伏有源半导体材料光伏电池
公开(公告)号：EP1859487A2
公开(公告)日：2007-11-28
申请号：EP06708672.8
申请日：2006-03-07
申请人： BASF AKTIENGESELLSCHAFT
发明人： STERZEL, Hans-Josef
IPC分类号： H01L31/032 , H01L31/0296 , C30B29/48 , H01L21/363 , H01L21/368
CPC分类号： H01L31/18 , H01L31/02963 , H01L31/0321 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： The invention relates to a photovoltaic cell and to a method for producing a photovoltaic cell containing a semiconductor photovoltaically active material of formula (I) or (II): ZnTe (I) Zn1-x Mnx Te (II), wherein x is a number ranging from 0.01 to 0.07, wherein the semiconductor photovoltaically active material contains a metal halogenide selected from a germanium, tin, antimony, bismuth and copper group and a halogen selected from a fluorine, chlorine, bromine and iodine group.

10. 发明公开

EP1291928A3 Zn1-xMgxSySe1-y pin and avalanche-photodiodes 审中-公开
标题翻译：锌1-X MRX个SY Se1的-Y销和雪崩光电二极管
公开(公告)号：EP1291928A3
公开(公告)日：2007-05-09
申请号：EP02017650.9
申请日：2002-08-06
申请人： Sumitomo Electric Industries, Ltd.
发明人： Ando, Koshi, Tottori University , Nakamura, Takao, Sumitomo Electric Industries Ltd
IPC分类号： H01L31/105 , H01L31/107 , H01L31/0296 , H01L31/0352
CPC分类号： B82Y20/00 , H01L31/02963 , H01L31/02966 , H01L31/035236 , H01L31/105 , H01L31/107 , H01L31/1832
摘要： A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn 1-x Mg x S y Se 1-y layer, an i-Zn 1-x Mg x S y Se 1-y layer, a p-Zn 1-x Mg x S y Se 1-y layer, a p-(ZnTe/ZnSe) m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode.
A blue-violet-near-ultraviolet avalanche photodiode with small dark current, high reliability and long lifetime. The avalanche photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn 1 - x Mg x S y Se 1 - y layer, an i-Zn 1 - x Mg x S y Se 1 - y layer, a p-Zn 1 - x Mg x S y Se 1 - y layer, a p-(ZnTe/ZnSe) m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. Upper sides of the layered structure are etched into a mesa-shape and coated with insulating films.

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