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1. 发明公开

EP2775520A3 Open source Power Quad Flat No-Lead (PQFN) leadframe 审中-公开
标题翻译：开源电源四方扁平无引脚（PQFN）引线框架
公开(公告)号：EP2775520A3
公开(公告)日：2017-12-13
申请号：EP14150001.7
申请日：2014-01-01
申请人： International Rectifier Corporation
发明人： Fernando, Dean , Barbosa, Roel , Takahashi, Toshio
IPC分类号： H01L23/495 , H02M7/00 , H02M1/00
CPC分类号： H01L23/49575 , H01L23/4952 , H01L23/49548 , H01L23/49582 , H01L2224/0603 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/4903 , H01L2224/49171 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30111 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： According to an exemplary implementation, a power quad flat no-lead (PQFN) leadframe includes U-phase, V-phase, and W-phase power switches situated on the PQFN leadframe. A drain of the U-phase power switch is connected to a U-phase output strip of the PQFN leadframe. A source of the U-phase power switch is connected to a U-phase current sense terminal. The U-phase output strip can substantially traverse across the PQFN leadframe. Another U-phase power switch is situated on the PQFN leadframe with a source of the another U-phase power switch connected to the U-phase output strip of the PQFN leadframe. The PQFN leadframe can include a leadframe island within the U-phase output strip. At least one wirebond may be connected to the U-phase output strip.
摘要翻译：根据示例性实施方式，功率四方扁平无引线（PQFN）引线框架包括位于PQFN引线框架上的U相，V相和W相功率开关。 U相电源开关的漏极连接到PQFN引线框架的U相输出条。 U相电源开关的源连接到U相电流感测端子。 U相输出带可以基本横穿PQFN引线框。另一个U相电源开关位于PQFN引线框架上，另一个U相电源开关的源极连接到PQFN引线框架的U相输出带。 PQFN引线框可以包括U相输出带内的引线框岛。至少一个引线可以连接到U相输出带。

2. 发明授权

EP2434537B1 Electrode pad on conductive semiconductor substrate 有权
标题翻译：导电半导体衬底上的电极焊盘
公开(公告)号：EP2434537B1
公开(公告)日：2017-08-30
申请号：EP11193014.5
申请日：2005-05-18
申请人： Nippon Telegraph And Telephone Corporation
发明人： Akage, Yuichi , Fukano, Hideki , Yamanaka, Takayuki , Saitoh, Tadashi
IPC分类号： H01L21/3205 , H01L21/60 , H01L27/14 , H01S5/042
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/13 , G02B2006/121 , G02F1/01708 , H01L2224/45144 , H01L2224/48091 , H01L2224/49175 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01S5/0425 , H01L2924/00014 , H01L2924/00

5. 发明公开

EP2885818A4 MICRO-CHANNEL-COOLED HIGH HEAT LOAD LIGHT EMITTING DEVICE 审中-公开
标题翻译： MIKROKANALGEKÜHLTELICHTEMITTIERENDE VORRICHTUNG MIT HOHERWÄRMELADUNG
公开(公告)号：EP2885818A4
公开(公告)日：2016-07-13
申请号：EP12883152
申请日：2012-08-20
申请人： HERAEUS NOBLELIGHT AMERICA LLC
发明人： DAHM JONATHAN S
IPC分类号： H01L29/66 , B05D3/06 , F26B3/28 , H01L25/075 , H01L33/62
CPC分类号： F26B3/28 , B05D3/067 , H01L25/0753 , H01L33/62 , H01L2224/48091 , H01L2224/48465 , H01L2224/49175 , H01L2224/73265 , H01L2924/3011 , H01L2924/30111 , H01L2924/00014 , H01L2924/00
摘要： Micro-channel-cooled UV curing systems and components thereof are provided. According to one embodiment, a lamp head module includes a high aspect ratio, high fill factor array of light emitting devices and a submount. The array includes multiple groups of electrically seriesed light emitting devices that are connected in electrical parallel. The submount is of monolithic construction and includes multiple re¬ shaped patterned circuit material layers. Each of the L-shaped patterned circuit material layers includes an arm portion and a stem portion. The arm portion functions as a light emitting device bond pad and the stem portion functions as a wire bond pad and a circuit trace. Each light emitting device of a group is affixed to a corresponding arm portion of the submount. The stem portions are located external to the array, run parallel to the length of the array and perform a primary current carrying function for current flow between adjacent light emitting devices of the group.
摘要翻译：提供了微通道冷却的UV固化系统及其组件。根据一个实施例，灯头模块包括高纵横比，发光器件的高填充因子阵列和基座。阵列包括以电并联连接的多组电串联发光器件。底座是单片结构，并且包括多个重新形成的图案化电路材料层。 L形图形电路材料层中的每一个包括臂部分和茎部分。臂部分用作发光器件接合焊盘，并且杆部分用作引线键合焊盘和电路迹线。组中的每个发光装置固定到底座的相应的臂部分。杆部分位于阵列的外部，平行于阵列的长度延伸，并对该组的相邻发光器件之间的电流进行初级载流功能。

6. 发明公开

EP3017470A1 ELECTRONIC DEVICE HAVING A LEAD WITH SELECTIVELY MODIFIED ELECTRICAL PROPERTIES 审中-公开
标题翻译： ELEKTRONISCHE VORRICHTUNG MIT LEITUNG MIT SELEKTIV MODIFIZIERTEN ELEKTRISCHEN EIGENSCHAFTEN
公开(公告)号：EP3017470A1
公开(公告)日：2016-05-11
申请号：EP14735474.0
申请日：2014-07-02
申请人： Rosenberger Hochfrequenztechnik GmbH & Co. KG
发明人： CAHILL, Sean S. , SANJUAN, Eric A.
IPC分类号： H01L23/49 , H01L23/50 , H01L23/66
CPC分类号： H01L23/49541 , H01L21/4821 , H01L21/4846 , H01L23/49506 , H01L23/49827 , H01L23/49838 , H01L23/50 , H01L23/64 , H01L23/645 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2223/6611 , H01L2224/45541 , H01L2224/4555 , H01L2224/4556 , H01L2224/45565 , H01L2224/4569 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4903 , H01L2224/49052 , H01L2224/85444 , H01L2224/8592 , H01L2224/8593 , H01L2224/85931 , H01L2224/85935 , H01L2224/85939 , H01L2224/85947 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/30111 , H01L2924/20654 , H01L2224/45099 , H01L2924/00
摘要： A die package having a plurality of connection pads, a die substrate supporting a plurality of connection elements, a first lead having a first metal core with a first core diameter, and a dielectric layer surrounding the first metal core, the dielectric layer having a first dielectric thickness that varies along its length and/or the dielectric layer having an outer metal layer at least partially surrounding the dielectric layer, for selectively modifying the electrical characteristics of the lead.
摘要翻译：具有多个连接焊盘的模具封装，支撑多个连接元件的管芯基板，具有第一芯直径的第一金属芯的第一引线和围绕第一金属芯的介电层，该介电层具有第一电介质厚度沿其长度变化和/或具有至少部分围绕电介质层的外部金属层的电介质层，用于选择性地修改引线的电特性。

7. 发明授权

EP1548536B1 Metal-oxide-semiconductor device having integrated bias circuit 有权
标题翻译：具有集成的偏置电路的金属氧化物半导体器件
公开(公告)号：EP1548536B1
公开(公告)日：2016-04-27
申请号：EP04256760.2
申请日：2004-11-02
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Lopez, Osvaldo , Lott, Joel Morrison
IPC分类号： H03F1/30 , H03F3/195 , G05F3/20
CPC分类号： H03F3/195 , G05F3/205 , H01L2224/49175 , H01L2924/1305 , H01L2924/13091 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03F1/301 , H03F2200/18 , H01L2924/00

8. 发明公开

EP2973695A1 INTEGRATION OF A REPLICA CIRCUIT AND A TRANSFORMER ABOVE A DIELECTRIC SUBSTRATE 审中-公开
标题翻译：集成EINER REPLICA-SCHALTUNG UND EINES TRANSFORMATORSÜBEREINEM DIELEKTRISCHEN SUBSTRAT
公开(公告)号：EP2973695A1
公开(公告)日：2016-01-20
申请号：EP14715483.5
申请日：2014-03-07
申请人： Qualcomm Incorporated
发明人： LAN, Je-Hsiung , LO, Chi Shun , KIM, Jonghae , VELEZ, Mario Francisco , HONG, John H.
IPC分类号： H01L23/522 , H01L23/64 , H01L27/13 , H01L49/02
CPC分类号： H03H11/28 , H01F41/02 , H01F2019/085 , H01F2027/2809 , H01L23/5227 , H01L23/645 , H01L23/66 , H01L27/1218 , H01L27/1225 , H01L27/1255 , H01L27/1259 , H01L27/13 , H01L28/10 , H01L2223/6655 , H01L2223/6672 , H01L2223/6677 , H01L2924/0002 , H01L2924/30111 , H01L2924/00
摘要： A particular device includes a replica circuit disposed above a dielectric substrate. The replica circuit includes a thin film transistor (TFT) configured to function as a variable capacitor or a variable resistor. The device further includes a transformer disposed above the dielectric substrate and coupled to the replica circuit. The transformer is configured facilitate an impedance match between the replica circuit and an antenna.
摘要翻译：一种方法包括在玻璃类材料的表面上形成复制电路。复制电路包括被配置为用作可变电容器或可变电阻器的薄膜晶体管（TFT）。该方法还包括在玻璃型材料的表面上形成变压器。变压器耦合到复制电路，并且变压器被配置为促进复制电路和天线之间的阻抗匹配。

10. 发明公开

EP2779227A2 Semiconductor package having multi-phase power inverter with internal temperature sensor 审中-公开
标题翻译： Halbleitergehäusemit mehrphasigem Wechselrichter mit internem Temperatursensor
公开(公告)号：EP2779227A2
公开(公告)日：2014-09-17
申请号：EP14156467.4
申请日：2014-02-25
申请人： International Rectifier Corporation
发明人： Fernando, Dean , Barbosa, Roel , Takahashi, Toshio
IPC分类号： H01L23/34
CPC分类号： H01L23/34 , H01L23/49562 , H01L23/49575 , H01L2224/05554 , H01L2224/0603 , H01L2224/45144 , H01L2224/45147 , H01L2224/48137 , H01L2224/4903 , H01L2224/49111 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30111 , H01L2924/00 , H01L2924/00014
摘要： According to an exemplary implementation, a semiconductor package includes a multi-phase power inverter having power switches and situated on a leadframe of the semiconductor package. The semiconductor package further includes a temperature sensor situated on the leadframe, where the temperature sensor is configured to generate a sensed temperature of the power switches. The semiconductor package also includes a driver circuit configured to drive the power switches of the multi-phase power inverter responsive to the sensed temperature. The temperature sensor can be on a common IC with the driver circuit. Furthermore, the semiconductor package can include an over-temperature protection circuit configured to provide over-temperature protection to the multi-phase power inverter using the sensed temperature.
摘要翻译：根据示例性实施例，半导体封装包括具有电源开关并位于半导体封装的引线框架上的多相电力逆变器。半导体封装还包括位于引线框架上的温度传感器，其中温度传感器被配置为产生功率开关的感测温度。半导体封装还包括驱动器电路，其被配置为响应于所感测的温度来驱动多相功率逆变器的功率开关。温度传感器可以与驱动器电路在公共IC上。此外，半导体封装可以包括过温保护电路，其被配置为使用感测的温度向多相功率逆变器提供过温保护。

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