专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP2434537A2 Electrode pad on conductive semiconductor substrate 有权
标题翻译： Elektrodenpad aufleitfähigemHalbleitersubstrat
公开(公告)号：EP2434537A2
公开(公告)日：2012-03-28
申请号：EP11193014.5
申请日：2005-05-18
申请人： Nippon Telegraph And Telephone Corporation
发明人： Akage, Yuichi , Fukano, Hideki , Yamanaka, Takayuki , Saitoh, Tadashi
IPC分类号： H01L21/3205 , H01L21/60 , H01L27/14 , H01S5/042
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/13 , G02B2006/121 , G02F1/01708 , H01L2224/45144 , H01L2224/48091 , H01L2224/49175 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01S5/0425 , H01L2924/00014 , H01L2924/00
摘要： An electrode pad on a conductive semiconductor substrate comprises a conductive substrate (21), an insulating material film (28) formed on the conductive substrate (21), an electrode pad (30) formed on the insulating material film (28), and a wiring electrode (31b, 31c) formed on said insulating material film (28), connected to said electrode pad (30), and having a width different from that of said electrode pad (30), wherein a first thickness (t 2 ) of a first region of said insulating material film (28) on which at least said electrode pad (30) is formed is greater than a second thickness (to) of a second region of said insulating material film (28) on which at least part of said wiring electrode (31b, 31c) is formed and which is a region other than said first region, wherein the width of said wiring electrode (31b, 31c) is smaller than the size of said electrode pad (30), and wherein a trench portion (28c) is formed in said conductive substrate (21), and a part of the first region of said insulating material film (28) is formed in said trench portion (28c) so that an interval between the bottom surface of said trench portion (28c) and said electrode pad (30) equals to said first thickness (t 2 ).
摘要翻译：导电半导体衬底上的电极焊盘包括导电衬底（21），形成在导电衬底（21）上的绝缘材料膜（28），形成在绝缘材料膜（28）上的电极焊盘（30）形成在所述绝缘材料膜（28）上的与所述电极焊盘（30）连接并且具有与所述电极焊盘（30）的宽度不同的宽度的布线电极（31b，31c），其中第一厚度（t 2）所述绝缘材料膜（28）的形成有至少所述电极焊盘（30）的第一区域大于所述绝缘材料膜（28）的第二区域的第二厚度（to），其中至少部分所述布线电极（31b，31c）形成为除了所述第一区域之外的区域，其中所述布线电极（31b，31c）的宽度小于所述电极焊盘（30）的尺寸，并且其中沟槽部分（28c）形成在所述导电衬底（21）中，并且所述第一区域的一部分所述绝缘材料膜（28）形成在所述沟槽部分（28c）中，使得所述沟槽部分（28c）的底表面和所述电极焊盘（30）之间的间隔等于所述第一厚度（t 2）。

2. 发明授权

EP2434537B1 Electrode pad on conductive semiconductor substrate 有权
标题翻译：导电半导体衬底上的电极焊盘
公开(公告)号：EP2434537B1
公开(公告)日：2017-08-30
申请号：EP11193014.5
申请日：2005-05-18
申请人： Nippon Telegraph And Telephone Corporation
发明人： Akage, Yuichi , Fukano, Hideki , Yamanaka, Takayuki , Saitoh, Tadashi
IPC分类号： H01L21/3205 , H01L21/60 , H01L27/14 , H01S5/042
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/13 , G02B2006/121 , G02F1/01708 , H01L2224/45144 , H01L2224/48091 , H01L2224/49175 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01S5/0425 , H01L2924/00014 , H01L2924/00

3. 发明公开

EP2434537A3 Electrode pad on conductive semiconductor substrate 有权
标题翻译： Elektrodenpad aufleitfähigemHalbleitersubstrat
公开(公告)号：EP2434537A3
公开(公告)日：2016-09-28
申请号：EP11193014.5
申请日：2005-05-18
申请人： Nippon Telegraph And Telephone Corporation
发明人： Akage, Yuichi , Fukano, Hideki , Yamanaka, Takayuki , Saitoh, Tadashi
IPC分类号： H01L21/3205 , H01L21/60 , H01L27/14 , H01S5/042
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/13 , G02B2006/121 , G02F1/01708 , H01L2224/45144 , H01L2224/48091 , H01L2224/49175 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01S5/0425 , H01L2924/00014 , H01L2924/00
摘要： An electrode pad on a conductive semiconductor substrate comprises a conductive substrate (21), an insulating material film (28) formed on the conductive substrate (21), an electrode pad (30) formed on the insulating material film (28), and a wiring electrode (31b, 31c) formed on said insulating material film (28), connected to said electrode pad (30), and having a width different from that of said electrode pad (30), wherein a first thickness (t 2 ) of a first region of said insulating material film (28) on which at least said electrode pad (30) is formed is greater than a second thickness (to) of a second region of said insulating material film (28) on which at least part of said wiring electrode (31b, 31c) is formed and which is a region other than said first region, wherein the width of said wiring electrode (31b, 31c) is smaller than the size of said electrode pad (30), and wherein a trench portion (28c) is formed in said conductive substrate (21), and a part of the first region of said insulating material film (28) is formed in said trench portion (28c) so that an interval between the bottom surface of said trench portion (28c) and said electrode pad (30) equals to said first thickness (t 2 ).
摘要翻译：提供了具有减小的电极焊盘部分的电容并且允许控制实用电极焊盘尺寸的特性阻抗的半导体衬底上的电极焊盘。通过层叠n-InP包层2，i层3和p-InP覆盖层和p型接触层4而形成的台面条型光波导形成在n-InP基板1，绝缘材料膜8 在n-InP基板1上形成具有靠近光波导的台面状沉积部分8c的电极11a和用于向光波导提供电信号的布线电极11b和11c放置在光波导和绝缘材料上膜8，并且在台面状沉积部分8c的顶表面上放置电极焊盘10，使得n-InP衬底1和电极焊盘10具有预定间隔t 1（约17至29μm ）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式