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1. 发明公开

EP2232559A4 ADJUSTABLE FIELD EFFECT RECTIFIER 有权转让
标题翻译：可调场效应整流器
公开(公告)号：EP2232559A4
公开(公告)日：2012-08-01
申请号：EP08833488
申请日：2008-09-25
申请人： ST MICROELECTRONICS NV
发明人： ANKOUDINOV ALEXEI , RODOV VLADIMIR
IPC分类号： H01L29/861 , H01L21/334
CPC分类号： H01L29/78 , H01L27/0817 , H01L29/0646 , H01L29/66075 , H01L29/66477 , H01L29/7802 , H01L29/861
摘要： A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.

2. 发明公开

EP1946381A2 LOW CAPACITANCE SCR WITH TRIGGER ELEMENT 审中-公开
标题翻译：较差的可控硅触发要素能力
公开(公告)号：EP1946381A2
公开(公告)日：2008-07-23
申请号：EP06816769.1
申请日：2006-10-11
申请人： Texas Instruments Incorporated
发明人： BOSELLI, Gianluca
IPC分类号： H01L29/74
CPC分类号： H01L29/87 , H01L27/0262 , H01L27/0817 , H01L29/66121 , H03K17/0403 , H03K17/08108
摘要： A silicon rectifier semiconductor device with selectable trigger and holding voltages includes a trigger element (522). A first well region (504) of a first conductivity type formed within a semiconductor body (502). A first region (510) of the first conductivity type is formed within the first well region. A second region (512) of a second conductivity type is formed with the first well region. A second well region (506) having the second conductivity type is formed within the semiconductor body adjacent the first well region. A third region (514) of the first conductivity type is formed within the second well region. A fourth region (516) of the second conductivity type is formed within the second well region. The trigger element is connected to the first region and alters a base trigger voltage and a base holding voltage into an altered trigger voltage and an altered holding voltage. A first terminal or pad (518) is connected to the second region. A second terminal (520) is connected to the third region, the fourth region, and the trigger element. In operation, the first terminal conducts current to the second terminal during a low impedance state in response to the altered trigger voltage being applied to the first terminal.

3. 发明公开

EP0559133A1 Static induction thyristor 失效
标题翻译： Statischer Induktion可控硅
公开(公告)号：EP0559133A1
公开(公告)日：1993-09-08
申请号：EP93103283.3
申请日：1993-03-02
申请人： ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI
发明人： Nishizawa, Jun-ichi
IPC分类号： H01L29/72
CPC分类号： H01L27/0817 , H01L29/7392
摘要： A static induction device (SI device) at least shares a structure in which an SI thyristor, an IGT and a capacitor are merged onto the single monolithic chip. The SI thyristor has a cathode (23), an anode (21) and gate regions (31), and a channel (22). The IGT has a well (59) on a surface of the channel, a source (31) and drain (32) regions within the well, a gate insulating film on the well, and a gate electrode (25) on the gate insulating film. The capacitor comprises the gate region (31) of the SI thyristor, the gate insulating film on the gate region, and the gate electrode (25). The cathode and the drain region are connected to each other through a high-conductive electrode (231).
摘要翻译：静态感应装置（SI装置）至少共享将SI晶闸管，IGT和电容器合并到单片芯片上的结构。 SI晶闸管具有阴极（23），阳极（21）和栅极区域（31）以及通道（22）。 IGT在通道的表面上具有阱（59），阱内的源极（31）和漏极（32）区域，阱上的栅极绝缘膜以及栅极绝缘膜上的栅电极（25）。电容器包括SI晶闸管的栅极区域（31），栅极区域上的栅极绝缘膜和栅电极（25）。阴极和漏极区域通过高导电电极（231）彼此连接。

4. 发明授权

EP0264415B1 COMPOSANT SEMICONDUCTEUR DE PROTECTION CONTRE LES SURTENSIONS ET SURINTENSITES 失效
标题翻译：用于防止过电压和过流保护的半导体元件
公开(公告)号：EP0264415B1
公开(公告)日：1991-03-27
申请号：EP87902554.2
申请日：1987-04-22
申请人： THOMSON-CSF
发明人： BACUVIER, Pierre
IPC分类号： H01L29/743 , H01L27/08
CPC分类号： H01L29/87 , H01L27/0248 , H01L27/07 , H01L27/0817
摘要： Semiconductor component intended to protect electric circuits against overvoltages and overcurrents, particularly due to lightning. In order to improve the energizing conditions of said component, independently of the wave form of the overvoltage appearing between terminals, there is provided a structure concentric with a Zener diode (zone A) at the center of an auxiliary thyristor (zone B), which is itself at the center of a main thyristor (zone A). In the event of an overvoltage, the Zener diode conducts and establishes a trigger current for the auxiliary thyristor and the main thyristor. The auxiliary thyristor trips before the main thyristor and provides a current with steep rise slope which contributes to the uniform energization of the main thyristor. This principle may be extended to bidirectional structures.

5. 发明公开

EP0264415A1 COMPOSANT SEMICONDUCTEUR DE PROTECTION CONTRE LES SURTENSIONS ET SURINTENSITES 失效
标题翻译：半导体部件电压和高电流强度的保护。
公开(公告)号：EP0264415A1
公开(公告)日：1988-04-27
申请号：EP87902554.0
申请日：1987-04-22
申请人： THOMSON-CSF
发明人： BACUVIER, Pierre
IPC分类号： H01L27 , H01L29
CPC分类号： H01L29/87 , H01L27/0248 , H01L27/07 , H01L27/0817
摘要： Composant semiconducteur destiné à la protection de circuits électriques contre des surtensions et surintensités, notamment dues à la foudre. Pour améliorer les conditions d'amorçage de ce composant, quelle que soit la forme d'onde de la surtension apparaissant entre bornes, on prévoit une structure concentrique avec une diode zener (zone A) au centre d'un thyristor auxiliaire (zone B), lui-même au centre d'un thyristor principal (zone A). En présence d'une surtension, la diode zener conduit et établit un courant de gâchette pour le thyristor auxiliaire et le thyristor principal. Le thyristor auxiliaire se déclenche avant le thyristor principal et fournit un courant à forte pente de croissance qui favorise l'amorçage uniforme du thyristor principal. Ce principe s'étend à des structures bidirectionnelles.

6. 发明授权

EP0008903B1 Semiconductor integrated circuit device 无效
标题翻译：半导体集成电路设备
公开(公告)号：EP0008903B1
公开(公告)日：1982-04-14
申请号：EP79301700.5
申请日：1979-08-20
申请人： FUJITSU LIMITED
发明人： Fukushima, Toshitaka
IPC分类号： H01L27/04 , H01L21/76
CPC分类号： H01L21/76229 , H01L21/76232 , H01L21/763 , H01L27/0233 , H01L27/0817 , Y10S148/085 , Y10S148/087

7. 发明公开

EP2232559A2 ADJUSTABLE FIELD EFFECT RECTIFIER 有权转让
标题翻译：可调场效应整流器
公开(公告)号：EP2232559A2
公开(公告)日：2010-09-29
申请号：EP08833488.3
申请日：2008-09-25
申请人： Lakota Technologies, INC.
发明人： ANKOUDINOV, Alexei , RODOV, Vladimir
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L27/0817 , H01L29/0646 , H01L29/66075 , H01L29/66477 , H01L29/7802 , H01L29/861
摘要： A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.

8. 发明公开

EP1946381A4 LOW CAPACITANCE SCR WITH TRIGGER ELEMENT 审中-公开
标题翻译： KAPAZITÄTSARMERSCR MIT TRIGGERELEMENT
公开(公告)号：EP1946381A4
公开(公告)日：2008-12-10
申请号：EP06816769
申请日：2006-10-11
申请人： TEXAS INSTRUMENTS INC
发明人： BOSELLI GIANLUCA
IPC分类号： H01L29/87 , H01L21/329 , H01L27/02 , H01L29/06 , H01L29/74 , H03K17/00
CPC分类号： H01L29/87 , H01L27/0262 , H01L27/0817 , H01L29/66121 , H03K17/0403 , H03K17/08108
摘要： A silicon rectifier semiconductor device with selectable trigger and holding voltages includes a trigger element. A first well region of a first conductivity type formed within a semiconductor body. A first region of the first conductivity type is formed within the first well region. A second region of a second conductivity type is formed with the first well region. A second well region having the second conductivity type is formed within the semiconductor body adjacent the first well region. A third region of the first conductivity type is formed within the second well region. A fourth region of the second conductivity type is formed within the second well region. The trigger element is connected to the first region and alters a base trigger voltage and a base holding voltage into an altered trigger voltage and an altered holding voltage. A first terminal or pad is connected to the second region. A second terminal is connected to the third region, the fourth region, and the trigger element. In operation, the first terminal conducts current to the second terminal during a low impedance state in response to the altered trigger voltage being applied to the first terminal.
摘要翻译：具有可选触发和保持电压的硅整流器半导体器件包括触发元件（522）。形成在半导体主体（502）内的第一导电类型的第一阱区（504）。第一导电类型的第一区域（510）形成在第一阱区域内。第二导电类型的第二区域（512）与第一阱区域一起形成。具有第二导电类型的第二阱区（506）形成在与第一阱区相邻的半导体本体内。第一导电类型的第三区域（514）形成在第二阱区域内。第二导电类型的第四区域（516）形成在第二阱区内。触发元件连接到第一区域并且将基极触发电压和基极保持电压改变成改变的触发电压和改变的保持电压。第一端子或垫（518）连接到第二区域。第二端子（520）连接到第三区域，第四区域和触发元件。在操作中，响应于改变的触发电压被施加到第一端子，第一端子在低阻抗状态期间将电流传导到第二端子。

9. 发明公开

EP1760785A3 Circuit d'allumage 审中-公开
标题翻译：点火电路
公开(公告)号：EP1760785A3
公开(公告)日：2008-01-02
申请号：EP06119929.5
申请日：2006-08-31
申请人： ST MICROELECTRONICS S.A.
发明人： Menard, Samuel , Cheron, Benjamin , Edet, Arnaud
IPC分类号： H01L27/08 , H01L27/06
CPC分类号： H01L27/0676 , H01L27/0814 , H01L27/0817
摘要： L'invention concerne un composant réalisé dans un substrat (1) d'un premier type de conductivité, comportant deux entrées (E, REF) et deux sorties (A, K) et :
une première diode (D2) dont l'anode est connectée à une première entrée (E), sa cathode étant connectée à une première sortie (A) ;
une deuxième diode (D1) dont l'anode est connectée à une seconde sortie (K), sa cathode étant connectée à la première entrée ;
un commutateur unidirectionnel (Th) dont l'anode est connectée à la première sortie, sa cathode étant connectée à la seconde sortie ; et
une troisième diode (D3) dont l'anode est connectée à la seconde sortie, sa cathode étant connectée à la première sortie ;
les première, deuxième et troisième diodes étant réalisées dans une première partie du substrat séparée par un mur (2) du second type de conductivité d'une seconde partie du substrat comportant le commutateur.

10. 发明授权

EP0930711B1 Thyristor bidirectionnel 有权
标题翻译： Zweirichtungsthyristor
公开(公告)号：EP0930711B1
公开(公告)日：2006-10-04
申请号：EP98410151.9
申请日：1998-12-17
申请人： STMicroelectronics S.A.
发明人： Rault, Pierre , Bernier, Eric
IPC分类号： H03K17/725
CPC分类号： H01L27/0641 , H01L27/0817 , H01L29/747 , H03K17/08144 , H03K17/725 , H03K2217/0036

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