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1. 发明公开

EP3128539A4 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3128539A4
公开(公告)日：2017-12-27
申请号：EP14835686
申请日：2014-03-27
申请人： RENESAS ELECTRONICS CORP
发明人： MAKINO YASUTOMO
IPC分类号： H01L21/50 , H01L21/288 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/28 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/065
CPC分类号： H01L23/49541 , H01L21/2885 , H01L21/4821 , H01L21/4835 , H01L21/4842 , H01L21/50 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/49503 , H01L23/49513 , H01L23/49551 , H01L23/49575 , H01L23/49582 , H01L23/50 , H01L24/05 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/0655 , H01L2224/05124 , H01L2224/05554 , H01L2224/05624 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48106 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/78301 , H01L2224/83192 , H01L2224/83801 , H01L2224/83862 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/15747 , H01L2924/17701 , H01L2924/17747 , H01L2924/181 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2924/00
摘要： In a method of manufacturing a semiconductor device according to an embodiment, a lead frame is provided, the lead frame having a trench part formed thereon so as to communicate bottom surfaces of a first lead and a second lead, which are coupled to each other between device regions adjacent to each other. Then, after a part of a coupling part between the first and second leads is cut by using a first blade, metal wastes formed inside the trench part are removed. Then, after the metal wastes are removed, a metal film is formed on exposed surfaces of the first and second leads by a plating method, and then, a remaining part of the coupling part between the first and second leads is cut by using a second blade. At this time, the cutting is performed so that the second blade does not contact the trench part.

2. 发明公开

EP2182097A1 Metal surface treatment aqueous solution and method for inhibiting whiskers on a metal surface 有权
标题翻译：金属的表面处理方法和水溶液晶须的在金属表面上的抑制
公开(公告)号：EP2182097A1
公开(公告)日：2010-05-05
申请号：EP09155461.8
申请日：2009-03-18
申请人： Rohm and Haas Electronic Materials LLC
发明人： Morii, Yutaka
IPC分类号： C25D3/32 , C25D3/60 , C23C18/48 , H05K3/24 , H05K3/34
CPC分类号： C09D7/1233 , C09D7/63 , C23C18/48 , C23C22/58 , C25D3/32 , C25D3/60 , H01L21/4835 , H05K3/22 , H05K3/244 , H05K3/3473 , H05K2201/0769 , H05K2203/0789 , H05K2203/122
摘要： A tin or tin alloy plating film surface treatment aqueous solution that can reduce whiskers on the surface of a tin or tin alloy plating film, and can provide a favorable tin or tin alloy plating film using a simple method for tin or tin alloy plating films that are used on electronic components.
摘要翻译：锡或锡合金镀膜表面处理wässrige溶液也可减少锡或锡合金镀膜，电影的表面上的晶须，并且可以提供良好的锡或锡合金镀膜，使用锡或锡合金镀膜的简单方法做上的电子部件被使用。

3. 发明公开

EP1384263A2 TRÄGER FÜR ELEKTRISCHE SCHALTUNGSELEMENTE 有权
标题翻译：载波电路元件
公开(公告)号：EP1384263A2
公开(公告)日：2004-01-28
申请号：EP02735294.7
申请日：2002-04-23
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DERANGEWANDTEN FORSCHUNG E.V. , Possehl Electronics Deutschland GmbH
发明人： LÜTHJE, Holger , KLAGES, Claus-Peter , VAN DER Zanden, Johannes Theodorus Maria , THIELE, Arno
IPC分类号： H01L23/495
CPC分类号： H01L23/49582 , H01L21/4835 , H01L2924/0002 , H05K3/24 , H01L2924/00
摘要： The invention relates to a support for electrical circuit elements that, for electrically connecting circuit elements by soldering, bonding or gluing, is comprised of a structured base body or is coated with structures consisting of easily oxidizing metals that have a multilayer, electrically conductive covering, which is inert on the outer surface, prevents a migration of the easily oxidizing metals, and has good soldering, bonding or adhering properties. The covering has the following composition: a) a first single ply or multiply layer that serves as an adhesive/barrier layer; b) a second single ply or multiply layer that serves as a functional layer for soldering, bonding or gluing, and; c) a third single ply or multiply layer, which is placed on the outer surface of the covering and which has inert properties and a high surface energy.

4. 发明授权

EP0430623B1 Non-cyanide electrode cleaning process 有权
标题翻译：清洗程序没有氰化物电极
公开(公告)号：EP0430623B1
公开(公告)日：1997-08-06
申请号：EP90312836.1
申请日：1990-11-26
申请人： MOTOROLA, INC.
发明人： Asher, Reginald K. , Lim, Beng Lian , Endicott, Duane W.
IPC分类号： H01L21/48 , C25F5/00
CPC分类号： C25F1/00 , C25F5/00 , H01L21/4835 , H01L2224/48247 , H01L2224/85011

6. 发明公开

EP0566872A3 A thermally enhanced semiconductor device and method for making the same 失效
标题翻译：一种热增强半导体器件及其制造方法
公开(公告)号：EP0566872A3
公开(公告)日：1994-05-11
申请号：EP93104433.3
申请日：1993-03-18
申请人： MOTOROLA, INC.
发明人： Joiner, Bennett A., Jr.
IPC分类号： H01L23/495 , H01L23/433
CPC分类号： H01L21/4821 , H01L21/4835 , H01L23/4334 , H01L23/49503 , H01L24/45 , H01L24/48 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/01014 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/1532 , H01L2924/1815 , H01L2924/18165 , H01L2924/00 , H01L2224/05599
摘要： A molded semiconductor device (24) having greater resistance to package cracking during board mounting in addition to increased thermal performance is provided wherein the device has a reduced semiconductor die to flag interface and a drop-in heat sink. The semiconductor die (12) is mounted on a leadframe (16) having a flag (15) with an opening to expose a substantial portion of the inactive surface (14) of the die (12). Decreasing the interfacial contact area between the die (12) and the flag (15) reduces the risk of package cracking during board mounting by limiting the area where delamination typically occurs. An encapsulant (22) forms a package body which encompasses an opening (23) to expose a substantial portion of the inactive surface (14) of the semiconductor die (12). A heat sink (26) is inserted into the opening (23), directly coupling the heat sink (26) to the die (12), after the semiconductor package is mounted onto a printed circuit board.
摘要翻译：提供了除了增加热性能之外，在板安装期间具有更大阻抗封装开裂的模制半导体器件（24），其中器件具有缩小的半导体管芯以标记接口和落入式散热器。半导体管芯（12）安装在具有带有开口的标记（15）的引线框架（16）上，以暴露管芯（12）的非活性表面（14）的大部分。降低模具（12）和标记（15）之间的界面接触面积通过限制通常发生分层的区域，降低了板安装期间封装开裂的风险。密封剂（22）形成封装主体，该封装主体包围用于暴露半导体管芯（12）的非活性表面（14）的大部分的开口（23）。在将半导体封装安装到印刷电路板上之后，将散热器（26）插入开口（23）中，直接将散热器（26）耦合到裸片（12）。

7. 发明公开

EP0591535A1 METHOD OF BLASTING IC FRAME AND APPARATUS THEREFOR 失效
标题翻译： SANDSTRAHLVERFAHREN FUER DAS LEITERRAHMEN EINER INTEGRIERTE SCHALTUNG UND APPARAT DAFUER。
公开(公告)号：EP0591535A1
公开(公告)日：1994-04-13
申请号：EP92912435.2
申请日：1992-06-18
申请人： KABUSHIKI GAISHA ISHII HYOKI
发明人： ISHII, Mineo , NAKANO, Teruyuki
IPC分类号： H01L21/56 , B65G17/06 , B65G47/22 , B65G47/84 , B65H15/00 , B24C3/08 , B24C3/12 , B65G47/248
CPC分类号： H01L21/67023 , B65G47/252 , H01L21/4835 , H01L21/4842
摘要： A method of blasting IC frames as electronic components with a suitable apparatus, which prevents the frames from being caught by position restriction means during transfer, and eliminates necessity for particular operations even if frames of different widths are continuously fed. The blasting is carried out by turning a conveyor belt (8), which has support plate members (11) juxtaposed thereon and has support grooves of an inverted triangular sectional shape formed thereon, jetting a slurry onto the IC frames (F) merely placed on the slope surfaces inside the support grooves from a nozzles (2), turning then the frames by a reversion device (3) so as to place them on other slope surfaces, and jetting the slurry from other nozzles.
摘要翻译：一种用合适的装置将IC框架作为电子部件进行喷射的方法，其防止在传送期间框架被位置限制装置卡住，并且即使连续地供给不同宽度的框架，也不需要特定的操作。通过转动具有并置在其上的支撑板构件（11）的输送带（8）进行喷砂，并且具有形成在其上的倒三角形截面形状的支撑槽，将浆料喷射到仅置于从喷嘴（2）内的支撑槽内的倾斜面，通过反转装置（3）转动框架，将其放置在其他倾斜面上，并从其他喷嘴喷射浆料。

8. 发明公开

EP4447094A1 A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP4447094A1
公开(公告)日：2024-10-16
申请号：EP24163133.2
申请日：2024-03-13
申请人： STMicroelectronics International N.V.
发明人： BELLIZZI, Antonio , CATALANO, Guendalina
IPC分类号： H01L21/48 , H01L23/495 , H01L21/56
CPC分类号： H01L21/4835 , H01L21/561 , H01L23/49541 , H01L21/4842 , H01L23/49582
摘要： A plurality of semiconductor chips or dice are arranged onto a first surface of a common electrically conductive substrate (12). The common substrate (12) has a second surface opposite the first surface and comprises adjacent substrate portions (120) having mutually facing sides with elongate sacrificial connecting bars (CB) extending between adjacent mutually facing sides. A solderable metallic layer (e.g., tin) is grown on the second surface of the common electrically conductive substrate (12) so that the solderable metallic layer extends over the connecting bars (CB). The solderable metallic layer is removed (e.g. via laser ablation) from at least part of the length the sacrificial connecting bars (CB). The common electrically conductive substrate (12) with the plurality of semiconductor dice arranged onto the first surface is cut to provide singulated individual semiconductor devices. Cutting is along the length of the elongate sacrificial connecting bars (CB) having the solderable metallic layer at least partly removed. In that way, undesired formation of electrically conductive filaments or flakes bridging parts of the substrate intended to be mutually isolated is countered.

9. 发明公开

EP2650074A4 BONDED BODY, POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING BONDED BODY AND POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：结合体功率半导体装置及其制造方法的结合体及功率半导体装置
公开(公告)号：EP2650074A4
公开(公告)日：2014-06-18
申请号：EP12826272
申请日：2012-08-08
申请人： PANASONIC CORP
发明人： MINAMIO MASANORI , SASAOKA TATSUO
IPC分类号： B23K20/00 , B23K35/22 , H01L21/60 , H01L23/50
CPC分类号： H01L21/4842 , B23K20/023 , B23K20/16 , B23K20/227 , B23K20/233 , B23K35/002 , B23K35/004 , B23K35/007 , B23K2201/18 , B23K2201/42 , B23K2203/04 , B23K2203/10 , B23K2203/12 , H01L21/4825 , H01L21/4835 , H01L23/4334 , H01L23/495 , H01L23/49537 , H01L23/49575 , H01L24/73 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00

10. 发明公开

EP2650074A1 BONDED BODY, POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING BONDED BODY AND POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：结合体功率半导体装置及其制造方法的结合体及功率半导体装置
公开(公告)号：EP2650074A1
公开(公告)日：2013-10-16
申请号：EP12826272.2
申请日：2012-08-08
申请人： Panasonic Corporation
发明人： MINAMIO, Masanori , SASAOKA, Tatsuo
IPC分类号： B23K20/00 , H01L23/50 , H01L21/60
CPC分类号： H01L21/4842 , B23K20/023 , B23K20/16 , B23K20/227 , B23K20/233 , B23K35/002 , B23K35/004 , B23K35/007 , B23K2201/18 , B23K2201/42 , B23K2203/04 , B23K2203/10 , B23K2203/12 , H01L21/4825 , H01L21/4835 , H01L23/4334 , H01L23/495 , H01L23/49537 , H01L23/49575 , H01L24/73 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： First, an aqueous solution (103) containing an oxide film remover is disposed on a junction region of a first metal plate (101). Then, with the aqueous solution (103) remaining on the first metal plate (101), a second metal plate (102) is placed on the first metal plate (101). Thereafter, a load is applied to junction regions of the first metal plate (101) and the second metal plate (102) in the vertical direction, thereby joining the first metal plate (101) and the second metal plate (102) together to form a junction portion (110). In this manner, a joined body is manufactured.
摘要翻译：首先，为了wässrige溶液（103），所述氧化膜去除的被布置在第一金属板（101）的结区。然后，用留在第一金属板（101）的wässrige溶液（103），第二金属板（102）被放置在第一金属板（101）。有后，负载被施加到第一金属板（101）和在垂直方向上的第二金属板（102），从而连接所述第一金属板（101）和所述第二金属板（102）一起形成的结区的接合部分（110）。以这种方式，一个结合体制造。

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