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1. 发明公开

EP2650074A4 BONDED BODY, POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING BONDED BODY AND POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：结合体功率半导体装置及其制造方法的结合体及功率半导体装置
公开(公告)号：EP2650074A4
公开(公告)日：2014-06-18
申请号：EP12826272
申请日：2012-08-08
申请人： PANASONIC CORP
发明人： MINAMIO MASANORI , SASAOKA TATSUO
IPC分类号： B23K20/00 , B23K35/22 , H01L21/60 , H01L23/50
CPC分类号： H01L21/4842 , B23K20/023 , B23K20/16 , B23K20/227 , B23K20/233 , B23K35/002 , B23K35/004 , B23K35/007 , B23K2201/18 , B23K2201/42 , B23K2203/04 , B23K2203/10 , B23K2203/12 , H01L21/4825 , H01L21/4835 , H01L23/4334 , H01L23/495 , H01L23/49537 , H01L23/49575 , H01L24/73 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00

2. 发明公开

EP2650074A1 BONDED BODY, POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING BONDED BODY AND POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：结合体功率半导体装置及其制造方法的结合体及功率半导体装置
公开(公告)号：EP2650074A1
公开(公告)日：2013-10-16
申请号：EP12826272.2
申请日：2012-08-08
申请人： Panasonic Corporation
发明人： MINAMIO, Masanori , SASAOKA, Tatsuo
IPC分类号： B23K20/00 , H01L23/50 , H01L21/60
CPC分类号： H01L21/4842 , B23K20/023 , B23K20/16 , B23K20/227 , B23K20/233 , B23K35/002 , B23K35/004 , B23K35/007 , B23K2201/18 , B23K2201/42 , B23K2203/04 , B23K2203/10 , B23K2203/12 , H01L21/4825 , H01L21/4835 , H01L23/4334 , H01L23/495 , H01L23/49537 , H01L23/49575 , H01L24/73 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： First, an aqueous solution (103) containing an oxide film remover is disposed on a junction region of a first metal plate (101). Then, with the aqueous solution (103) remaining on the first metal plate (101), a second metal plate (102) is placed on the first metal plate (101). Thereafter, a load is applied to junction regions of the first metal plate (101) and the second metal plate (102) in the vertical direction, thereby joining the first metal plate (101) and the second metal plate (102) together to form a junction portion (110). In this manner, a joined body is manufactured.
摘要翻译：首先，为了wässrige溶液（103），所述氧化膜去除的被布置在第一金属板（101）的结区。然后，用留在第一金属板（101）的wässrige溶液（103），第二金属板（102）被放置在第一金属板（101）。有后，负载被施加到第一金属板（101）和在垂直方向上的第二金属板（102），从而连接所述第一金属板（101）和所述第二金属板（102）一起形成的结区的接合部分（110）。以这种方式，一个结合体制造。

3. 发明公开

EP1635386A1 Method of removing molding residues from lead-frames 审中-公开
标题翻译： Verfahren zur Entfernung von Harzresten von Leiterrahmen
公开(公告)号：EP1635386A1
公开(公告)日：2006-03-15
申请号：EP04104349.8
申请日：2004-09-09
申请人： STMicroelectronics S.r.l.
发明人： Crema, Paolo
IPC分类号： H01L21/48 , B24C1/00 , B24C3/26
CPC分类号： H01L21/4835 , H01L24/73 , H01L2224/32245 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2924/15747 , H01L2924/30107 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A method of removing molding residues ( 310 ) from surfaces ( 125,140 ) of a lead-frame ( 100 ) for electronic devices ( 108 ), exposed from at least one insulating body ( 145 ) formed by said molding, is provided. The method includes generating a flow ( 260 ) of accelerated pellets of a frozen substance ( 305 ), and hitting at least the exposed surfaces ( 125,140 ) of the lead-frame with the generated flow.
摘要翻译：提供了从由所述模制形成的至少一个绝缘体（145）暴露的用于电子设备（108）的引线框架（100）的表面（125,140）上去除模制残余物（310）的方法。该方法包括产生冷冻物质（305）的加速丸粒的流动（260），并且至少用所产生的流击打引线框架的暴露表面（125,140）。

4. 发明公开

EP1495815A1 Verfahren zum Reinigen einer metallischen Oberfläche 审中-公开
标题翻译： Verfahren zum Reinigen einer metallischenOberfläche
公开(公告)号：EP1495815A1
公开(公告)日：2005-01-12
申请号：EP04015751.3
申请日：2004-07-05
申请人： Stahl Biebertal GmbH
发明人： Dönges, Marco , Mandler, Hans-Peter
IPC分类号： B21B45/02 , C23C2/28 , C23C2/26 , B21D28/16 , H05K3/00
CPC分类号： H01L21/4835 , B21D28/16 , C23C2/14 , C23C2/26 , C23C2/28 , H05K3/26
摘要： Beschrieben ist ein Verfahren zur Eliminierung von an der Oberfläche eines Bauteils (1) lose haftenden oder hochstehenden Partikeln, die aus dem die Oberfläche des Bauteils (1) bildenden Metall, insbesondere Zinn oder einer Zinnlegierung, bestehen, bei welchem die Oberfläche des Bauteils (1) in einer Schutzgasatmosphäre (4) auf eine Prozeßtemperatur erwärmt wird, die gleich der Schmelztemperatur des die Oberfläche bildenden Metalls oder geringfügig niedriger als diese ist.
摘要翻译：粘附在部件表面上的用于除去由金属，特别是锡或锡合金制成的颗粒的方法包括将保护气体气氛中的组分的表面加热到与金属成型的熔融温度相同的工艺温度表面或低于熔融温度。

5. 发明公开

EP0430623A3 Non-cyanide electrode cleaning process 有权
标题翻译：非氰化物电极清洗工艺
公开(公告)号：EP0430623A3
公开(公告)日：1991-09-25
申请号：EP90312836.1
申请日：1990-11-26
申请人： MOTOROLA, INC.
发明人： Asher, Reginald K. , Lim, Beng Lian , Endicott, Duane W.
IPC分类号： H01L21/48 , C25F5/00
CPC分类号： C25F1/00 , C25F5/00 , H01L21/4835 , H01L2224/48247 , H01L2224/85011
摘要： An electrolytic process (70) employing a water solution of metal lactates or lactic acid and metal hydroxides, rapidly and safely removes metal plating bleed (42), residual oxides , stains or the like (39), plastic flash (36), resin bleed (36) and deflashing media (38), from electrodes (16) of electronic devices. Anodic etching (72) or a combination of cathodic (82) and anodic (72) etching (72) is preferred. Noble metals are selectively removed without cyanide compounds. For example, excess silver from spot plating on copper leadframes is etched away 2-3 times faster than the underlying copper. After cleaning the device leads (16) are bright, polished, stain-free and without scale, residual plating bleed (42), deflashing media (38), plastic flash or resin bleed (36). The process is effective, less hazardous, easy to use and economical.

6. 发明公开

EP0354800A3 Processes for producing semiconductor devices 失效
标题翻译：用于生产半导体器件的方法
公开(公告)号：EP0354800A3
公开(公告)日：1990-12-27
申请号：EP89308168.7
申请日：1989-08-11
申请人： MITSUI PETROCHEMICAL INDUSTRIES, LTD.
发明人： Katayama, Shigeru , Tominaga, Kaoru , Suetsugu, Toshio , Matsumoto, Kazumi
IPC分类号： H01L21/50 , H01L23/10
CPC分类号： H01L21/50 , H01L21/4835 , H01L23/10 , H01L24/45 , H01L24/48 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/16195 , H01L2924/181 , Y10T29/49121 , H01L2924/00 , H01L2224/05599
摘要： Semiconductor devices are produced by a process involving the steps of obtaining a core-box resin molded item integrated with a lead frame by coating said lead frame on its portions expected to be in non-contact with said core-box resin molded item with an organic high molecular substance having a melting or softening point higher than the molding temperature of the resin constituting said core-box resin molded item and soluble in a solvent which does not dissolve said core-box resin molded item, placing the thus coated lead frame in position within a mold and injecting the resin into the mold thereby carrying out injection or transfe molding and immersing the lead frame bearing core-box resin molded item obtained in the foregoing step in said solvent to remove by dissolving said organic high molecular substance. Thus, resin flash formed on the lead frame can be removed with facility of the formation of flash can be suppressed without damaging the resin molded portion, whereby a good electrical connection between the lead frame and the semiconductor element can be accomplished. Further processes of the invention involve the use of ultrasound to help remove flash and also choice of materials for the lead frame and resin box with linear expansion coefficients which differ by less than a selected amount so as to achieve a good mutual adhesion and humidity resistance.
摘要翻译：半导体器件通过以下步骤制造，该方法包括以下步骤：通过在预期与所述芯盒树脂模制品不接触的部分上涂覆所述引线框架以获得与引线框架一体化的芯盒树脂模塑件，熔点或软化点高于构成所述芯盒树脂成型品的树脂的成型温度并溶解在不溶解所述芯盒树脂成型品的溶剂中的高分子物质，将这样涂覆的引线框架放置在位在模具内并将树脂注入模具中，从而进行注射或转印成型，并将上述步骤中获得的引线框架轴承芯盒树脂模制品浸入所述溶剂中，以通过溶解所述有机高分子物质除去。因此，可以抑制在引线框架上形成的树脂闪光，同时可以抑制闪光形成的设备，而不会损坏树脂模制部分，从而可以实现引线框架和半导体元件之间良好的电连接。本发明的其它方法涉及使用超声波来帮助消除闪光，并且还可以选择具有线性膨胀系数的引线框架和树脂盒的材料，其中该膨胀系数的差异小于所选择的量，以便实现良好的相互粘附和耐湿性。

8. 发明公开

EP3128539A4 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3128539A4
公开(公告)日：2017-12-27
申请号：EP14835686
申请日：2014-03-27
申请人： RENESAS ELECTRONICS CORP
发明人： MAKINO YASUTOMO
IPC分类号： H01L21/50 , H01L21/288 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/28 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/065
CPC分类号： H01L23/49541 , H01L21/2885 , H01L21/4821 , H01L21/4835 , H01L21/4842 , H01L21/50 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/49503 , H01L23/49513 , H01L23/49551 , H01L23/49575 , H01L23/49582 , H01L23/50 , H01L24/05 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/0655 , H01L2224/05124 , H01L2224/05554 , H01L2224/05624 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48106 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/78301 , H01L2224/83192 , H01L2224/83801 , H01L2224/83862 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/15747 , H01L2924/17701 , H01L2924/17747 , H01L2924/181 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2924/00
摘要： In a method of manufacturing a semiconductor device according to an embodiment, a lead frame is provided, the lead frame having a trench part formed thereon so as to communicate bottom surfaces of a first lead and a second lead, which are coupled to each other between device regions adjacent to each other. Then, after a part of a coupling part between the first and second leads is cut by using a first blade, metal wastes formed inside the trench part are removed. Then, after the metal wastes are removed, a metal film is formed on exposed surfaces of the first and second leads by a plating method, and then, a remaining part of the coupling part between the first and second leads is cut by using a second blade. At this time, the cutting is performed so that the second blade does not contact the trench part.

9. 发明公开

EP2182097A1 Metal surface treatment aqueous solution and method for inhibiting whiskers on a metal surface 有权
标题翻译：金属的表面处理方法和水溶液晶须的在金属表面上的抑制
公开(公告)号：EP2182097A1
公开(公告)日：2010-05-05
申请号：EP09155461.8
申请日：2009-03-18
申请人： Rohm and Haas Electronic Materials LLC
发明人： Morii, Yutaka
IPC分类号： C25D3/32 , C25D3/60 , C23C18/48 , H05K3/24 , H05K3/34
CPC分类号： C09D7/1233 , C09D7/63 , C23C18/48 , C23C22/58 , C25D3/32 , C25D3/60 , H01L21/4835 , H05K3/22 , H05K3/244 , H05K3/3473 , H05K2201/0769 , H05K2203/0789 , H05K2203/122
摘要： A tin or tin alloy plating film surface treatment aqueous solution that can reduce whiskers on the surface of a tin or tin alloy plating film, and can provide a favorable tin or tin alloy plating film using a simple method for tin or tin alloy plating films that are used on electronic components.
摘要翻译：锡或锡合金镀膜表面处理wässrige溶液也可减少锡或锡合金镀膜，电影的表面上的晶须，并且可以提供良好的锡或锡合金镀膜，使用锡或锡合金镀膜的简单方法做上的电子部件被使用。

10. 发明公开

EP1384263A2 TRÄGER FÜR ELEKTRISCHE SCHALTUNGSELEMENTE 有权
标题翻译：载波电路元件
公开(公告)号：EP1384263A2
公开(公告)日：2004-01-28
申请号：EP02735294.7
申请日：2002-04-23
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DERANGEWANDTEN FORSCHUNG E.V. , Possehl Electronics Deutschland GmbH
发明人： LÜTHJE, Holger , KLAGES, Claus-Peter , VAN DER Zanden, Johannes Theodorus Maria , THIELE, Arno
IPC分类号： H01L23/495
CPC分类号： H01L23/49582 , H01L21/4835 , H01L2924/0002 , H05K3/24 , H01L2924/00
摘要： The invention relates to a support for electrical circuit elements that, for electrically connecting circuit elements by soldering, bonding or gluing, is comprised of a structured base body or is coated with structures consisting of easily oxidizing metals that have a multilayer, electrically conductive covering, which is inert on the outer surface, prevents a migration of the easily oxidizing metals, and has good soldering, bonding or adhering properties. The covering has the following composition: a) a first single ply or multiply layer that serves as an adhesive/barrier layer; b) a second single ply or multiply layer that serves as a functional layer for soldering, bonding or gluing, and; c) a third single ply or multiply layer, which is placed on the outer surface of the covering and which has inert properties and a high surface energy.

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