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1. 发明公开

EP2828709A4 LIQUID DEPOSITION PHOTOLITHOGRAPHY 审中-公开
标题翻译：液分离光刻
公开(公告)号：EP2828709A4
公开(公告)日：2015-11-04
申请号：EP13763769
申请日：2013-03-22
申请人： UNIV COLORADO REGENTS
发明人： MCLEOD ROBERT R , URNESS ADAM , COLE MICHAEL , MOORE ERIC
IPC分类号： G03F7/20 , G03F7/00
CPC分类号： G03F7/2041 , G03F7/0035 , G03F7/2022 , G03F7/70 , G03F7/70341

2. 发明公开

EP3198629A4 MULTI-PASS PATTERNING USING NON-REFLECTING RADIATION LITHOGRAPHY ON AN UNDERLYING GRATING 审中-公开
公开(公告)号：EP3198629A4
公开(公告)日：2018-05-30
申请号：EP14902548
申请日：2014-09-22
申请人： INTEL CORP
发明人： CHANDHOK MANISH , YOUNKIN TODD R , LEE SANG H , WALLACE CHARLES H
IPC分类号： H01L21/027 , G03F7/00 , H01L21/768
CPC分类号： G03F7/70 , G03F7/0035 , G03F7/094 , G03F7/2039 , G03F7/70466 , H01L21/0273 , H01L21/0274 , H01L21/0277 , H01L21/0332 , H01L21/31144 , H01L21/76816
摘要： Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.

3. 发明公开

EP2828709A1 LIQUID DEPOSITION PHOTOLITHOGRAPHY 审中-公开
标题翻译： FLÜSSIGABSCHEIDUNGSFOTOLITHOGRAFIE
公开(公告)号：EP2828709A1
公开(公告)日：2015-01-28
申请号：EP13763769.0
申请日：2013-03-22
申请人： The Regents of The University of Colorado, A Body Corporate
发明人： MCLEOD, Robert R. , URNESS, Adam , COLE, Michael , MOORE, Eric
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/0035 , G03F7/2022 , G03F7/70 , G03F7/70341
摘要： Systems and methods for liquid deposition photolithography are described. In particular, some embodiments relate to systems and methods for using photolithography to control the 2D structure of a thin layer of material (e.g., photopolymer) using various masks, projection optics and materials. In one or more embodiments, this thin layer can be manipulated by micro-fluidic techniques such that it can be formed, patterned and post-processed in a liquid environment, vastly simplifying the creation of multi-layer structures. Multiple layers are rapidly built up to create thick structures of possibly multiple materials that are currently challenging to fabricate by existing methods.
摘要翻译：描述了用于液相沉积光刻的系统和方法。特别地，一些实施例涉及使用光刻法来使用各种掩模，投影光学元件和材料来控制薄层材料（例如光聚合物）的2D结构的系统和方法。在一个或多个实施例中，该薄层可以通过微流体技术来操作，使得其可以在液体环境中形成，图案化和后处理，极大地简化了多层结构的产生。快速构建多层以创建可能多种材料的厚结构，这些材料目前是通过现有方法制造的挑战。

4. 发明公开

EP2993498A1 Structured polarizer and method for manufacturing the same 无效
标题翻译： Strukturierter Polarisator和Verfahren zur Herstellung davon
公开(公告)号：EP2993498A1
公开(公告)日：2016-03-09
申请号：EP14183595.9
申请日：2014-09-04
申请人： Codixx AG
发明人： Volke, Andrè , Stalmashonak, Andrei
IPC分类号： G02B5/30 , G01J3/02 , G03F7/20 , B29D11/00 , C03C14/00 , C03C23/00
CPC分类号： G02B5/3008 , B29D11/00644 , C03C14/006 , C03C17/09 , C03C23/0025 , C03C23/007 , C03C2214/08 , C03C2217/252 , C03C2218/33 , C03C2218/34 , G01J3/0224 , G02B5/3058 , G02B27/286 , G03F7/70
摘要： The present invention relates to a structured polarizer and method for manufacturing the same.
A structured polarizer according to the invention comprises a substrate (10) being formed of a dielectric material in which elongated metal particles (21, 22, 23, 24) are embedded such to form a polarizing layer (10), the polarizing layer (10) comprising a plurality of first polarizing regions (11) having first elongated metal particles (21) being collectively aligned along a first direction and a plurality of second regions (12) having second metal particles (21), wherein the first polarizing regions (11) and the second regions (12) are arranged side by side such to adjoin each other, wherein the first metal particles (21) of the first polarizing regions (11) are arranged in the same plane (X) of the polarizing layer (10) as the second metal particles (23) of the second regions (12), a degree of polarization with respect to the first direction in the first polarizing regions (11) at a distance between 0.5 µm and 1 µm from a boundary (15) between the first polarizing regions (11) and the second regions (12) is more than 90%, and a degree of polarization with respect to the first direction in the second regions (12) at a distance between 0.5 µm and 1 µm from the boundary (15) between the first polarizing regions (11) and the second regions (12) is less than 10%.
摘要翻译：本发明涉及一种结构化偏振器及其制造方法。根据本发明的结构偏振器包括：基底（10），其由介电材料形成，其中嵌入细长金属颗粒（21,22,23,24）以形成偏振层（10），偏振层（10））包括具有沿第一方向共同排列的第一细长金属颗粒（21）的多个第一偏振区域（11）和具有第二金属颗粒（21）的多个第二区域（12），其中所述第一偏振区域）和所述第二区域（12）并排布置成彼此邻接，其中所述第一偏振区域（11）的所述第一金属颗粒（21）布置在所述偏振层（10）的同一平面（X）中）作为第二区域（12）的第二金属颗粒（23），在距第一偏振区域（11）中距离边界（15）0.5μm至1μm之间的距离处的相对于第一方向的偏振度在第一偏振区域（11）和所述第二区域（12）大于90％，并且所述第二区域（12）中的距离所述第一偏振区域（12）之间的边界（15）的距离为0.5μm至1μm之间的第一方向的偏振度（11）和第二区域（12）小于10％。

5. 发明公开

EP2781550A4 SELF-ORGANIZATION COMPOSITION FOR PATTERN FORMATION AND PATTERN FORMATION METHOD 有权
标题翻译：自组织组成的图案形成和图案形成方法
公开(公告)号：EP2781550A4
公开(公告)日：2015-07-29
申请号：EP12848021
申请日：2012-11-01
申请人： JSR CORP
发明人： NAMIE YUJI , MINEGISHI SHINYA , NAGAI TOMOKI , SONE TAKUO
IPC分类号： C08L53/00 , C08F293/00 , C08F297/02 , G03F7/004 , H01L21/027
CPC分类号： C08F297/026 , B81C1/00031 , B81C2201/0149 , C08L53/005 , G03F7/0002 , G03F7/0035 , G03F7/70 , H01L21/0273 , H01L21/0337 , H01L21/3086 , H01L21/32139
摘要： The present invention is a self-organization composition for pattern formation comprising a block copolymer [A] containing a polystyrene block having styrene units and a polyalkyl(meth)acrylate block having alkyl(meth)acrylate units, the self-organization composition for pattern formation being characterized in that the block copolymer [A] has groups (±) that are bonded to at least one terminus of the main chain and that contain hetero atoms. The hetero atoms are preferably at least one type selected from a group of oxygen, nitrogen, sulfur, phosphorus, tin, and silicon atoms.

6. 发明公开

EP3291011A1 LAYOUT METHOD, MARK DETECTION METHOD, LIGHT EXPOSURE METHOD, MEASUREMENT APPARATUS, LIGHT EXPOSURE APPARATUS, AND METHOD FOR MANUFACTURING DEVICE 审中-实审
标题翻译：布局方法，标记检测方法，光线曝光方法，测量装置，光线曝光装置和制造装置的方法
公开(公告)号：EP3291011A1
公开(公告)日：2018-03-07
申请号：EP16768934.8
申请日：2016-03-25
申请人： Nikon Corporation
发明人： SHIBAZAKI, Yuichi
IPC分类号： G03F9/00 , G03F7/20 , H01L21/68
CPC分类号： G03F9/7088 , G03F7/20 , G03F7/70 , G03F9/00 , G03F9/708 , H01L21/68
摘要： On a substrate conforming to a layout method for a plurality of marks for detection using a plurality of mark detection systems (AL1, AL2 1 to AL2 4 ) of which the detection centers are arranged at a predetermined spacing along an X-axis direction, a plurality of shot areas Si (i=1, 2, ...) are formed in both an X-axis direction and a Y-axis direction orthogonal thereto in an XY plane, and sets including at least two marks (WMj) (j=1, 2, 3, 4, 5) separated in the X-axis direction are repeatedly arranged along the X-axis direction at spacing of a length (w) in the X-axis-direction of each shot area (Si), and the marks belonging to each set are separated from each other in the X-axis direction by a spacing determined based arrangement in the X-axis direction of the plurality of mark detection systems (AL1, AL2 1 to AL2 4 ) and the length (w). It is thereby possible to reliably detect a plurality of marks on a substrate using a plurality of mark detection systems.
摘要翻译：在使用检测中心沿着X轴方向以预定间隔布置的多个标记检测系统（AL1，AL21至AL24）的符合用于多个用于检测的标记的布局方法的衬底上，在XY平面上在X轴方向和与其正交的Y轴方向上均形成有至少两个标记（WMj）（j = 1）的拍摄区域Si（i = 1,2，...），2,3,4,5）沿X轴方向以每个照射区域（Si）的X轴方向上的长度（w）的间隔重复布置，并且在X轴方向通过基于多个标记检测系统（AL1，AL21至AL24）的X轴方向上的间隔确定的排列和长度（w），将属于每个集合的标记在X轴方向上彼此分开。由此可以使用多个标记检测系统可靠地检测基板上的多个标记。

7. 发明公开

EP3198629A1 MULTI-PASS PATTERNING USING NON-REFLECTING RADIATION LITHOGRAPHY ON AN UNDERLYING GRATING 审中-公开
标题翻译：使用非反射辐射光刻法在相关光栅上进行多通道图案化
公开(公告)号：EP3198629A1
公开(公告)日：2017-08-02
申请号：EP14902548.8
申请日：2014-09-22
申请人： Intel Corporation
发明人： CHANDHOK, Manish , YOUNKIN, Todd R. , LEE, Sang H. , WALLACE, Charles H.
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70 , G03F7/0035 , G03F7/094 , G03F7/2039 , G03F7/70466 , H01L21/0273 , H01L21/0274 , H01L21/0277 , H01L21/0332 , H01L21/31144 , H01L21/76816
摘要： Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.
摘要翻译：讨论了与多通道图案化光刻有关的技术，器件结构以及使用这种技术形成的器件。这种技术包括用非反射辐射曝光设置在光栅图案上的抗蚀剂层，以在光栅图案的沟槽内产生增强的曝光部分，并显影抗蚀剂层以在光栅的沟槽内形成具有图案结构的图案层模式。

8. 发明公开

EP2715781A4 REFILLABLE AMPOULE WITH PURGE CAPABILITY 有权转让
标题翻译：具有通风能力的可充气聚氨酯
公开(公告)号：EP2715781A4
公开(公告)日：2014-11-12
申请号：EP12793563
申请日：2012-05-24
申请人： ADVANCED TECH MATERIALS
发明人： CHISM RICHARD D , KRELL ANDY
IPC分类号： H01L21/02 , C23C16/44 , C23C16/448 , C23C16/455 , F17C13/04
CPC分类号： F17C13/04 , C23C14/48 , C23C16/44 , C23C16/4408 , C23C16/4482 , C23C16/45561 , F17C2205/0335 , F17D1/04 , G03F7/70 , H01L21/67017 , Y10T137/0318 , Y10T137/877
摘要： A fluid delivery system adapted to isolate an ampoule and/or process line during purge, including an inlet control valve connecting a source of pressurized gas to a refillable ampoule, an outlet control valve connecting the refillable ampoule to a location of use, a process control valve connecting a process line to the refillable ampoule, a process isolation valve, and a purge supply valve, e.g., a three-way purge supply valve, arranged between the process isolation valve and the process control valve. A method of purging a fluid delivery system is also disclosed, including closing a process isolation valve, connecting a process line to a refillable ampoule, supplying a purge gas through a purge supply valve, e.g., a three-way purge supply valve, and cycling open and close at least once a process control valve coupled to the process line. A manifold for use in refilling an ampoule and purging a fluid supply system is also described.

9. 发明公开

EP3133553A1 METHOD FOR VERIFYING A PATTERN OF FEATURES PRINTED BY A LITHOGRAPHY PROCESS 有权转让
标题翻译：为了验证特性的图案的方法通过光刻工艺印花
公开(公告)号：EP3133553A1
公开(公告)日：2017-02-22
申请号：EP15181276.5
申请日：2015-08-17
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Mailfert, Julien , Leray, Philippe , Halder, Sandip
IPC分类号： G06T7/00 , G03F1/70
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F1/84 , G03F7/70 , G06F17/5081 , G06F2217/12 , G06T7/001 , G06T2207/10061 , G06T2207/30148
摘要： The invention is related to a method for verifying a printed pattern comprising polygon-shaped features (1-7) as printed by a lithographic tool using a lithographic mask, wherein a number of sectors of features of the pattern are first defined, and wherein the surface area of these sectors is used for calculating one or more parameters that express the print quality of the features, said parameters being suitable for determining a process window. The surface area of the sectors is determined on a contour of the printed pattern, obtainable from an CD-SEM image of the printed pattern. According to preferred embodiments, the parameters are ratios of surface area-based values divided by reference values. The reference values may be determined on the basis of the design intent of a pattern or on the basis of a contour extracted from a simulated print of the pattern.
摘要翻译：本发明涉及一种用于验证一个印刷图案，包括如使用光刻掩模由印刷的光刻工具多边形特征（1-7），worin一个数字的图案的特征的扇区，首先定义，并且worin 合成扇区的表面积被用于计算一个或多个参数并表达的特征的打印质量，所述参数适于确定开采的工艺窗口。扇区的表面积确定性开采上的印刷图案，可获得的结果为印刷图案的CD-SEM图像的轮廓。。根据优选的实施方案中，参数是参考值分割面基于区域的值的比率。参考值可以是确定的开采的图案，或从图案的模拟打印提取的轮廓的基础上设计意图的基础上。

10. 发明公开

EP2927749A4 ORGANIC TREATMENT SOLUTION FOR PATTERNING OF CHEMICALLY AMPLIFIED RESIST FILM, CONTAINER FOR ORGANIC TREATMENT SOLUTION FOR PATTERNING OF CHEMICALLY AMPLIFIED RESIST FILM, AND PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE USING SAME 有权
标题翻译：有机处理解决方案为有机处理解决方案结构的化学增强漆膜，容器的化学增强漆膜结构和方法成形结构，方法生产电子器件及电子设备
公开(公告)号：EP2927749A4
公开(公告)日：2016-06-22
申请号：EP13851077
申请日：2013-10-17
申请人： FUJIFILM CORP
发明人： YAMANAKA TSUKASA , KAWAMOTO TAKASHI
IPC分类号： G03F7/30 , B65D81/24 , G03F7/038 , G03F7/039 , G03F7/32 , H01L21/027
CPC分类号： G03F7/32 , B65D25/14 , B65D85/70 , G03F7/038 , G03F7/039 , G03F7/325 , G03F7/70
摘要： Provided are: an organic treatment solution for patterning chemically amplified resist films, which can reduce the generation of particles, particularly when using an organic developing solution in a negative pattern formation method for forming a fine (e.g. 30 nm node or less) pattern; a container for the organic treatment solution for patterning chemically amplified resist films; and a pattern formation method, an electronic device manufacturing method, and an electronic device using the same. The organic treatment solution for patterning chemically amplified resist films contains 1ppm or less of an alkyl olefin having a carbon number of 22 or less, and has a metal element concentration of 5ppm or less for each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni and Zn. The pattern formation method, the electronic device manufacturing method, and the electronic device use the same.

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