专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP1623273B1 USE OF SPIN-ON, PHOTOPATTERNABLE, INTERPLAYER DIELECTRIC MATERIALS AND INTERMEDIATE SEMICONDUCTOR DEVICE STRUCTURE UTILIZING THE SAME 有权
标题翻译：的电介质，可光成像的，通过旋涂涂覆的中间层和半导体结构此膜含有TEMPORARILY
公开(公告)号：EP1623273B1
公开(公告)日：2015-06-24
申请号：EP04751894.9
申请日：2004-05-11
申请人： Micron Technology, Inc.
发明人： LI, Weimin , SANDHU, Gurtej, S.
IPC分类号： G03F7/075 , G03F7/095 , H01L21/311 , H01L21/02
CPC分类号： G03F7/095 , G03F7/0757 , H01L21/02134 , H01L21/02137 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/02348 , H01L21/311 , Y10T428/31663

2. 发明公开

EP2765457A1 COMPOSITION FOR FORMING SILICON-CONTAINING EUV RESIST UNDERLAYER FILM 审中-公开
标题翻译： ZUSAMMENSETZUNG ZUR BILDUNG EINER SILICIUMHALTIGEN EUV-LACK-UNTERSCHICHTFOLIE
公开(公告)号：EP2765457A1
公开(公告)日：2014-08-13
申请号：EP12838943.4
申请日：2012-10-02
申请人： Nissan Chemical Industries, Ltd.
发明人： SHIGAKI, Shuhei , YAGUCHI, Hiroaki , SAKAMOTO, Rikimaru , HO, Bang-ching
IPC分类号： G03F7/11 , H01L21/027
CPC分类号： H01L21/311 , B05D3/0272 , C08G77/24 , C08G77/26 , C08G77/80 , C09D183/04 , C09D183/08 , G03F7/0752 , G03F7/11 , G03F7/2004 , G03F7/38 , G03F7/40 , H01L21/02107 , H01L21/02112 , H01L21/02123 , H01L21/02137 , H01L21/3081
摘要： There is provided a resist underlayer film for lithography that improves the exposure sensitivity of an EUV resist, and generates a small amount of out gases during the exposure to EUV light, and to provide a resist underlayer film forming composition for forming the underlayer film. A resist underlayer film forming composition for EUV lithography, comprising: as a silane, a hydrolyzable silane, a hydrolyzate of the hydrolyzable silane, a hydrolysis condensate of the hydrolyzable silane, or a mixture of any of the hydrolyzable silane, the hydrolyzate, and the hydrolysis condensate, wherein the hydrolyzable silane includes a combination of tetramethoxysilane, an alkyltrimethoxysilane, and an aryltrialkoxysilane, and the aryltrialkoxysilane is represented by formula (1):

(R 2 ) n2- R 1 -(CH 2 ) n1 -Si(X) 3 Formula (1)

(in formula (1), R 1 is an aromatic ring consisting of a benzene ring or a naphthalene ring or a ring including an isocyanuric acid structure, R 2 is a substituent replacing a hydrogen atom on the aromatic ring and is a halogen atom or a C 1-10 alkoxy group, and X is a C 1-10 alkoxy group, a C 2-10 acyloxy group, or a halogen group).
摘要翻译：提供了一种用于光刻的抗蚀剂下层膜，其提高了EUV抗蚀剂的曝光灵敏度，并且在曝光于EUV光下产生少量的外部气体，并且提供了用于形成下层膜的抗蚀剂下层膜形成组合物。一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：作为硅烷，可水解硅烷，可水解硅烷的水解产物，可水解硅烷的水解缩合物，或任何可水解硅烷，水解产物和水解缩合物，其中可水解硅烷包括四甲氧基硅烷，烷基三甲氧基硅烷和芳基三烷氧基硅烷的组合，芳基三烷氧基硅烷由式（1）表示：€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ ）n2- R 1 - （CH 2）n1 -Si（X）3€ƒ€ƒ€ƒƒFormula（1）（式（1）中，R 1是由苯环或萘环或包含异氰脲酸结构的环，R 2为取代芳环上的氢原子的取代基，为卤原子或C 1-10烷氧基，X为碳原子数1〜10的烷氧基， C 2-10酰氧基或卤素基团）。

3. 发明公开

EP2579304A1 INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS 审中-公开
标题翻译：法形成用于隔离模式的分离和图案形成材料而镶嵌工艺
公开(公告)号：EP2579304A1
公开(公告)日：2013-04-10
申请号：EP11786728.3
申请日：2011-05-26
申请人： JSR Corporation
发明人： DEI Satoshi , NAMAI Hayato , YASUDA Kyoyu , HASEGAWA Koichi
IPC分类号： H01L21/768 , G03F7/40 , H01L21/027 , H01L21/3205
CPC分类号： B05D1/322 , C09D183/06 , G03F7/0392 , G03F7/094 , G03F7/38 , G03F7/405 , H01L21/02126 , H01L21/02137 , H01L21/0337 , H01L21/311 , H01L21/76801 , H01L21/76802 , H01L21/76807
摘要： An insulation pattern-forming method and an insulation pattern-forming material for a damascene process can conveniently form a multilayer structure without requiring a complex etching step and the like. The insulation pattern-forming method includes (I) forming an organic pattern on a substrate, (II) filling a space defined by the organic pattern with an insulating material, (III) removing the organic pattern to obtain an inverted pattern formed of the insulating material, and (IV) curing the inverted pattern.
摘要翻译：为镶嵌工艺的绝缘图案形成方法和绝缘图案形成材料可以方便地形成多层结构，而不需要复杂的蚀刻工序等。绝缘图案形成方法包括：（I）形成在上的基材的有机图案，（II）填充在绝缘材料由有机图案与所限定的空间，（III）中除去有机图案以获得形成在绝缘的反转图案材料，和（IV）固化所述反转模式。

4. 发明公开

EP2456811A2 METHOD AND MATERIALS FOR REVERSE PATTERNING 审中-公开
标题翻译：反向构图的方法和材料
公开(公告)号：EP2456811A2
公开(公告)日：2012-05-30
申请号：EP10802609.7
申请日：2010-06-22
申请人： Dow Corning Corporation
发明人： BRADFORD, Michael, L. , MOYER, Eric, Scott , TAKEUCHI, Kasumi , WANG, Sheng , YEAKLE, Craig
IPC分类号： C08G77/18 , C08L83/04 , C09D183/04 , G03F7/20 , G03F7/075
CPC分类号： C08G77/18 , C08L83/04 , C09D183/04 , H01L21/02137 , H01L21/02282 , H01L21/0337
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF
4 is used to "etch back" the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O
2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译：将倍半硅氧烷树脂施加在图案化的光致抗蚀剂上并固化以在图案表面的顶部上产生固化的倍半硅氧烷树脂。随后，使用包含CF 4的碱性汽提剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，从而暴露光致抗蚀剂的整个顶表面。然后，包含O 2的第二反应离子蚀刻配方蚀刻掉光刻胶。其结果是具有过孔的硅树脂膜，其具有图案化到光刻胶中的柱的尺寸和形状。或者，可以将新模式传送到底层。

5. 发明公开

EP1760800A3 Radiation emitting device and method of manufacturing the same 有权
标题翻译：辐射发射装置及其制造方法
公开(公告)号：EP1760800A3
公开(公告)日：2010-06-02
申请号：EP05024592.7
申请日：2005-11-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： Bogner, Arici Elif , Gärditz, Chistoph , Heuser, Karsten , Hunze, Arvid , Pätzold, Ralph
IPC分类号： H01L51/52 , H01L51/54
CPC分类号： H01L51/5268 , B82Y20/00 , B82Y30/00 , H01L21/02134 , H01L21/02137 , H01L21/3124 , H01L51/5275 , H01L2251/5315 , H01L2251/5369
摘要： In one embodiment the invention provides a radiation emitting electronic device (1) comprising a substrate (5), a radiation emitting functional area (10A, 10B, 15) on the substrate (5) and a radiation out-coupling material (20) comprising polysilsesquioxane (20D) and inorganic nanoparticles (20C) arranged in the optical path (100) of the radiation emitting functional area (10A, 10B, 15). Such a device has a higher luminance due to an increased fraction of out-coupled radiation in comparison to a device having no radiation out-coupling material.
摘要翻译：在一个实施例中，本发明提供了一种辐射发射电子装置（1），其包括衬底（5），衬底（5）上的辐射发射功能区域（10A，10B，15）和辐射输出耦合材料（20）（10A，10B，15）的光路（100）中的聚倍半硅氧烷（20D）和无机纳米颗粒（20C）。与没有辐射输出耦合材料的器件相比，这种器件由于耦合辐射的分数增加而具有更高的亮度。

6. 发明公开

EP1819844A1 METHOD FOR FORMING ANTI-REFLECTIVE COATING 有权
标题翻译：法形成抗反射涂层的
公开(公告)号：EP1819844A1
公开(公告)日：2007-08-22
申请号：EP05800835.0
申请日：2005-09-29
申请人： Dow Corning Corporation
发明人： FU, Peng-Fei , MOYER, Eric, Scott , YEAKLE, Craig, Rollin
IPC分类号： C23C18/02 , H01L21/312 , H01L21/027 , C08G77/12
CPC分类号： C23C18/1295 , C08G77/12 , C09D183/04 , C23C18/06 , C23C18/122 , G03F7/091 , H01L21/02137 , H01L21/02282 , H01L21/3124 , Y10T428/24463 , Y10T428/31663
摘要： Silsesquioxane resins useful in forming the antireflective coating having the formula (PhSiO(3-x)/2(OH)x)m HSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q where Ph is a phenyl group, Me is a methyl group, R is selected from ester groups and polyether groups, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, q has a value of 0.01 to 0.30 and m + n + p + q ≈1.

7. 发明公开

EP0406911A1 Process for preparation of polysilsesquioxane 失效
标题翻译： Verfahren zur Herstellung von Polysilsesquioxanen。
公开(公告)号：EP0406911A1
公开(公告)日：1991-01-09
申请号：EP90114892.4
申请日：1985-10-31
申请人： FUJITSU LIMITED
发明人： Fukuyama, Shun-ichi, Fujitsu Atsusgi-ryo, 3-10 , Yoneda, Yasuhiro , Miyagawa, Masashi , Nishii, Kota , Matsuura, Azuma
IPC分类号： C08G77/06
CPC分类号： H01L21/02137 , C08G77/06 , H01B3/46 , H01L21/02282 , H01L21/3122 , H01L21/4803 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , Y10S428/90 , Y10S428/901 , Y10T428/31663 , Y10T428/31678 , H01L2924/00
摘要： A process for preparation of polysilsesquioxane having a general formula
wherein R is CH₃ or C₂H₅ , and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving methyl or ethyl trifunctional silane in an organic solvent at a temperature of -20°C to -50°C to form an organic solution thereof; (b) hydrolyzing the trifunctional silane by dropping water into the organic solution at a temperature of -20°C to -50°C under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60°C to 100°C under an inert gas pressurized at 1,000 to 3,000 Pa.
摘要翻译：一种制备具有通式的聚倍半硅氧烷的方法，其中R为CH 3或C 2 H 5，n为等于约50至约10,000的整数，其通过以下步骤制备：（a）将甲基或乙基三官能硅烷溶于有机溶剂中温度为-20℃至-50℃以形成其有机溶液; （b）在加压至1000〜3000Pa的惰性气体下，在-20℃至-50℃的温度下将水滴入有机溶液中，水解三官能硅烷; 和（c）在加压至1000〜3000Pa的惰性气体下，将有机溶液与位于其中的水相一起逐渐加热至60℃至100℃的温度。

8. 发明授权

EP1760800B1 Radiation emitting device and method of manufacturing the same 有权
标题翻译：发光及其制备元件和过程
公开(公告)号：EP1760800B1
公开(公告)日：2017-01-04
申请号：EP05024592.7
申请日：2005-11-10
申请人： OSRAM OLED GmbH
发明人： Bogner, Arici Elif , Gärditz, Chistoph , Heuser, Karsten , Hunze, Arvid , Pätzold, Ralph
IPC分类号： H01L51/52 , H01L51/54 , B82Y20/00 , B82Y30/00 , H01L21/312
CPC分类号： H01L51/5268 , B82Y20/00 , B82Y30/00 , H01L21/02134 , H01L21/02137 , H01L21/3124 , H01L51/5275 , H01L2251/5315 , H01L2251/5369
摘要： In one embodiment the invention provides a radiation emitting electronic device (1) comprising a substrate (5), a radiation emitting functional area (10A, 10B, 15) on the substrate (5) and a radiation out-coupling material (20) comprising polysilsesquioxane (20D) and inorganic nanoparticles (20C) arranged in the optical path (100) of the radiation emitting functional area (10A, 10B, 15). Such a device has a higher luminance due to an increased fraction of out-coupled radiation in comparison to a device having no radiation out-coupling material.

9. 发明公开

EP1797584A4 METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS 审中-公开
标题翻译：方法和设备纳结构MONO层和器件与这种MONO表层形成
公开(公告)号：EP1797584A4
公开(公告)日：2014-08-13
申请号：EP05786766
申请日：2005-06-07
申请人： SANDISK CORP
发明人： HEALD DAVID L , CRUDEN KAREN CHU , DUAN XIANGFENG , LIU CHAO , PARCE J WALLACE
IPC分类号： H01L21/31 , B82Y10/00 , B82Y30/00 , G03F7/075 , G11C13/00 , H01L21/28 , H01L21/312 , H01L21/469 , H01L21/82 , H01L27/10 , H01L29/739
CPC分类号： G03F7/0757 , B82Y10/00 , B82Y30/00 , G11C13/00 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/28273 , H01L21/3124 , Y10S977/755 , Y10S977/845 , Y10S977/855 , Y10S977/936 , Y10S977/938

10. 发明公开

EP2129733A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER 审中-公开
标题翻译：抗反射涂料组合物基于硅聚合物
公开(公告)号：EP2129733A2
公开(公告)日：2009-12-09
申请号：EP08709884.4
申请日：2008-02-18
申请人： AZ Electronic Materials USA Corp.
发明人： ABDALLAH, David , ZHANG, Ruzhi
IPC分类号： C09D183/06 , G03F7/075 , H01L21/312
CPC分类号： C09D183/06 , G03F7/0752 , G03F7/091 , H01L21/02126 , H01L21/02137 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： The present invention relates to an antireflecting coating composition which is capable of forming a crosslinked coating underneath a layer of photoresist comprising a silicon polymer, where the silicon polymer comprises at least one unit with the structure 1, where, R1 is selected from C1-C4 alkyl. The invention also relates to a process for imaging this composition.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式