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1. 发明授权

EP2858126B1 Method of manufacturing solar cell using substrate 有权
标题翻译：一种用于制造太阳能电池基板的方法
公开(公告)号：EP2858126B1
公开(公告)日：2015-11-04
申请号：EP14191623.9
申请日：2009-03-05
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Bateman, Nicholas, P.T. , Murphy, Paul J. , Sullivan, Paul , Gupta, Atul
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01J37/3171 , H01J37/32412 , H01J2237/0827 , H01J2237/202 , H01J2237/31711 , H01L21/26513 , H01L21/266 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521

2. 发明公开

EP2814051A1 Shadow mask implantation system 审中-公开
标题翻译：阴影掩模植入系统
公开(公告)号：EP2814051A1
公开(公告)日：2014-12-17
申请号：EP14176404.3
申请日：2011-02-09
申请人： Intevac, Inc.
发明人： Chun, Moon , Adibi, Babak
IPC分类号： H01J37/317 , H01L21/266
CPC分类号： H01J37/3171 , G03F1/20 , H01J2237/31711 , H01L21/266
摘要： An adjustable shadow mask implantation system comprising: an ion source configured to provide ions; a first occlusion mask having a first set of elongated openings substantially parallel to a first axis; and a second occlusion mask having a second set of elongated openings substantially parallel to the first axis, wherein the first occlusion mask and the second occlusion mask are configured such that the first set of elongated openings overlap with, but are offset from, the second set of elongated openings to form a resulting set of elongated openings through which ions from the ion source are selectively allowed to pass therethrough to a substrate where they are implanted, each elongated opening of the resulting set being smaller than each elongated opening of the first and second sets.
摘要翻译：一种可调节荫罩植入系统，包括：配置成提供离子的离子源; 第一阻塞掩模，其具有基本平行于第一轴线的第一组细长开口; 以及具有基本平行于所述第一轴线的第二组细长开口的第二阻塞掩模，其中所述第一阻塞掩模和所述第二阻塞掩模被配置成使得所述第一组细长开口与所述第二组重叠但偏离的细长开口以形成最终的一组细长开口，来自离子源的离子通过该开口被选择性地允许穿过其到达其中它们被注入的衬底，所得到的组的每个细长开口比第一和第二集。

3. 发明公开

EP2642513A3 Techniques for processing a substrate 审中-公开
标题翻译：一种用于处理衬底的方法
公开(公告)号：EP2642513A3
公开(公告)日：2014-03-19
申请号：EP13172471.8
申请日：2010-04-08
申请人： Varian Semiconductor Equipment Associates Inc.
发明人： Daniels, Kevin M. , Low, Russell J. , Riordon, Benjamin B.
IPC分类号： H01L21/266 , H01L31/18 , H01J37/317
CPC分类号： H01L31/068 , H01J2237/31711 , H01L21/266 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise directing an ion beam comprising a plurality of ions along an ion beam path, from an ion source to the substrate; disposing at least a portion of a mask in the ion beam path, between the ion source and the substrate; and translating one of the substrate and the mask relative to other one of the substrate and the mask.

4. 发明公开

EP2642512A2 Techniques for processing a substrate 审中-公开
标题翻译： Verfahren zur Verarbeitung eines Substrats
公开(公告)号：EP2642512A2
公开(公告)日：2013-09-25
申请号：EP13172459.3
申请日：2010-04-08
申请人： Varian Semiconductor Equipment Associates Inc.
发明人： Daniels, Kevin M. , Low, Russell J. , Riordon, Benjamin B.
IPC分类号： H01L21/266 , H01L31/18 , H01J37/317
CPC分类号： H01L31/068 , H01J2237/31711 , H01L21/266 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise directing an ion beam comprising a plurality of ions along an ion beam path, from an ion source to the substrate; disposing at least a portion of a mask in the ion beam path, between the ion source and the substrate; and translating one of the substrate and the mask relative to other one of the substrate and the mask.
摘要翻译：本文中公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，该技术可以被实现为用于处理衬底的方法。该方法可以包括将离子束沿着离子束路径从离子源引导到衬底; 在离子源和衬底之间的离子束路径中设置掩模的至少一部分; 并且相对于衬底和掩模中的另一个平移衬底和掩模中的一个。

5. 发明公开

EP2622634A1 INTEGRATED SHADOW MASK/CARRIER FOR PATTERN ION IMPLANTATION 有权
标题翻译：整体孔MASK / SUPPORT离子注入
公开(公告)号：EP2622634A1
公开(公告)日：2013-08-07
申请号：EP11769982.7
申请日：2011-09-23
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： BATEMAN, Nicholas, P., T. , DANIELS, Kevin, M. , GUPTA, Atul , LOW, Russell, J. , RIORDON, Benjamin, D. , MITCHELL, Robert, J. , ANELLA, Steven, M.
IPC分类号： H01L21/677 , H01J37/317 , H01L21/687
CPC分类号： H01L21/677 , H01J37/3171 , H01J2237/31711 , H01L21/68735 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns cart be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier, in addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier, in some embodiments, gravity is used to held the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.

6. 发明公开

EP2301066A2 USE OF PATTERN RECOGNITION TO ALIGN PATTERNS IN A DOWNSTREAM PROCESS 审中-公开
标题翻译：模式识别技术用于对齐图案下游工序
公开(公告)号：EP2301066A2
公开(公告)日：2011-03-30
申请号：EP09767807.2
申请日：2009-06-19
申请人： Varian Semiconductor Equipment Associates
发明人： MURPHY, Paul, J. , BATEMAN, Nicholas, P.T.
IPC分类号： H01L21/265 , H01L21/66
CPC分类号： H01L22/20 , H01J2237/31711 , H01L21/2236 , H01L21/26513 , H01L21/67259 , H01L22/12 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. The doped regions are created on the substrate, using a mas or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to maintain this alignment. This information can also be fed back to the ion implantation equipment to modify the implant parameters. These techniques can also be used in other ion implanter applications.

7. 发明授权

EP2622634B1 INTEGRATED SHADOW MASK/CARRIER FOR ION IMPLANTATION 有权
标题翻译：整体孔MASK / SUPPORT离子注入
公开(公告)号：EP2622634B1
公开(公告)日：2014-09-03
申请号：EP11769982.7
申请日：2011-09-23
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： BATEMAN, Nicholas, P., T. , DANIELS, Kevin, M. , GUPTA, Atul , LOW, Russell, J. , RIORDON, Benjamin, D. , MITCHELL, Robert, J. , ANELLA, Steven, M.
IPC分类号： H01L21/687
CPC分类号： H01L21/677 , H01J37/3171 , H01J2237/31711 , H01L21/68735 , H01L31/1804 , Y02E10/547 , Y02P70/521

8. 发明公开

EP2417623A4 TECHNIQUES FOR PROCESSING A SUBSTRATE 有权
公开(公告)号：EP2417623A4
公开(公告)日：2012-12-26
申请号：EP10762439
申请日：2010-04-08
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： DANIELS KEVIN M , LOW RUSSELL J , RIORDON BENJAMIN B , BATEMAN NICHOLAS P T
IPC分类号： H01L21/266 , H01J37/317 , H01L31/18
CPC分类号： C23C14/042 , C23C14/48 , H01J37/3171 , H01J2237/08 , H01J2237/303 , H01J2237/31711 , H01L21/266
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.

9. 发明公开

EP2417623A2 TECHNIQUES FOR PROCESSING A SUBSTRATE 有权
标题翻译：加工基材的技术
公开(公告)号：EP2417623A2
公开(公告)日：2012-02-15
申请号：EP10762439.7
申请日：2010-04-08
申请人： Varian Semiconductor Equipment Associates
发明人： DANIELS, Kevin, M. , LOW, Russell, J. , RIORDON, Benjamin, B. , BATEMAN, Nicholas, P., T.
IPC分类号： H01L21/265
CPC分类号： C23C14/042 , C23C14/48 , H01J37/3171 , H01J2237/08 , H01J2237/303 , H01J2237/31711 , H01L21/266
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
摘要翻译：这里公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。掩模可以被结合到衬底处理系统中，例如离子注入系统。掩模可以包括设置在第一行中的一个或多个第一孔; 以及设置在第二行中的一个或多个第二孔，每行沿着所述掩模的宽度方向延伸，其中所述一个或多个第一孔和所述一个或多个第二孔不均匀。

10. 发明公开

EP2351101A2 TECHNIQUE FOR MANUFACTURING A SOLAR CELL 审中-公开
标题翻译：一种用于制造太阳能电池的过程
公开(公告)号：EP2351101A2
公开(公告)日：2011-08-03
申请号：EP09830787.9
申请日：2009-10-20
申请人： Varian Semiconductor Equipment Associates
发明人： BLAKE, Julian, G. , DANIELS, Kevin, M.
IPC分类号： H01L31/042 , H01L21/265
CPC分类号： H01L21/266 , H01J37/3171 , H01J2237/31711 , H01L31/18
摘要： Techniques for manufacturing solar cells are disclosed. In one particular exemplary embodiment, the technique may comprise disposing a mask upstream of the solar cell, the mask comprising a plurality of fiiaments spaced apart from one another to define at least one aperture; directing a ribbon ion beam of desired species toward the solar cell to ion implant a portion of the solar cell defined by the at least one aperture of the mask; and orienting the ribbon ion beam such that longer cross-section dimension of the ribbon beam is perpendicular to the aperture in one plane.

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