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1. 发明授权

EP3305946B1 REMOVING A SHEET FROM THE SURFACE OF A MELT USING GAS JETS 有权
公开(公告)号：EP3305946B1
公开(公告)日：2019-05-01
申请号：EP17201509.1
申请日：2011-03-02
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： KELLERMAN, Peter L. , THRONSON, Gregory D. , SUN, Dawei
IPC分类号： C30B15/06 , C30B28/10 , C30B29/06 , C30B29/52 , C30B29/64 , C30B11/00 , C30B15/00 , C30B15/22 , C30B15/24 , C30B15/34 , C30B35/00 , C30B9/00

2. 发明授权

EP2973617B1 HIGH VOLTAGE BUSHING FOR CRYOGENICS APPLICATIONS 有权
公开(公告)号：EP2973617B1
公开(公告)日：2019-05-01
申请号：EP14772977.6
申请日：2014-03-12
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： TEKLETSADIK, Kasegn D. , STANLEY, Charles L. , FERSAN, Semaan , VENUTO, Nicholas A. , NICKERSON, Scott
IPC分类号： H01B17/56 , H01B12/00 , H01L39/16 , H01B17/58 , H02G15/34

3. 发明公开

EP3305946A1 REMOVING A SHEET FROM THE SURFACE OF A MELT USING GAS JETS 有权
标题翻译：使用气体喷射从熔体表面除去薄片
公开(公告)号：EP3305946A1
公开(公告)日：2018-04-11
申请号：EP17201509.1
申请日：2011-03-02
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： KELLERMAN, Peter L. , THRONSON, Gregory D. , SUN, Dawei
IPC分类号： C30B15/06 , C30B28/10 , C30B29/06 , C30B29/52 , C30B29/64 , C30B11/00 , C30B15/00 , C30B15/22 , C30B15/24 , C30B15/34 , C30B35/00 , C30B9/00
CPC分类号： C30B35/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B15/002 , C30B15/06 , C30B15/22 , C30B15/24 , C30B15/34 , C30B28/10 , C30B29/06 , C30B29/52 , C30B29/64 , Y10T117/1048 , Y10T117/1092
摘要： In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.
摘要翻译：在一个实施例中，片材生产装置包括构造成保持材料的熔体的容器。冷却板布置在熔体附近并且构造成在熔体上形成材料片。第一气体射流被构造成将气体导向容器的边缘。一片材料在熔体的表面上水平平移并且从熔体移除片材。第一气体射流可以指向弯月面并且可以稳定该弯月面或增加弯月面内的局部压力。

4. 发明公开

EP3268984A1 SYSTEM AND METHOD FOR CONTROLLABLE NON-VOLATILE METAL REMOVAL 审中-公开
标题翻译：用于可控非易失性金属去除的系统和方法
公开(公告)号：EP3268984A1
公开(公告)日：2018-01-17
申请号：EP16765410.2
申请日：2016-03-01
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： CHEN, Tsung-Liang , SCHMIEGE, Benjamin , ANTHIS, Jeffrey W. , GILCHRIST, Glen
IPC分类号： H01L21/306 , H01L21/203
CPC分类号： C23F1/12 , B05B12/02 , B05B15/00 , B05B17/00 , C23C16/0236 , C23C18/1295 , C23F4/00 , H01J37/32449 , H01J37/32834 , H01L21/32135 , H01L21/67248 , H01L21/67253
摘要： A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. In some embodiments, one or more gasses are introduced into the chamber at a first temperature. The atoms in these gasses chemically react with the metal on the surface of the substrate to form a removable compound. The gasses are then exhausted from the chamber, leaving the removable compound on the surface of the substrate. The temperature of the chamber is then elevated to a second temperature, greater than the sublimation temperature of the removable compound. This increased temperature allows the removable compound to become gaseous and be exhausted from the chamber.

5. 发明公开

EP3036810A1 FAST SWITCH FAULT CURRENT LIMITER 审中-公开
标题翻译： FEHLERSTROMBEGRENZER MIT SCHNELLER SCHALTUNG
公开(公告)号：EP3036810A1
公开(公告)日：2016-06-29
申请号：EP14838482.9
申请日：2014-08-19
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： TEKLETSADIK, Kasegn D. , STANLEY, Charles L.
IPC分类号： H02H9/02
CPC分类号： H02H9/005 , H01H71/10 , H01H71/2409 , H01H71/2463 , H01H83/02 , H02H9/021
摘要： A fault current limiter circuit including a fast switch fault current limiter (FSFCL) and a voltage control reactor (VCR) operative to conduct load current during a steady state operation and limit load current when the load current exceeds fault current limits. The FSFCL may include a breaker having electrical contacts, a coil electrically coupled to the electrical breaker contacts, a plunger mechanically coupled to the electrical breaker contacts, a parallel voltage control (VCR), a transient overvoltage control circuit (TOCC), wherein when current greater than a threshold level flows through the coil, a magnetic field having strength to move the plunger is generated, the movement of the plunger operates to open the contacts in the breaker and transfer fault current to VCR and TOCC and limit the overall system fault current.
摘要翻译：包括快速开关故障限流器（FSFCL）和电压控制电抗器（VCR）的故障电流限制器电路，在负载电流超过故障电流限制时，可在稳态运行期间传导负载电流并限制负载电流。 FSFCL可以包括具有电触点的断路器，电连接到断路器触点的线圈，机械地耦合到断路器触点的柱塞，并联电压控制（VCR），瞬态过电压控制电路（TOCC），其中当电流大于阈值电平流过线圈，产生具有移动柱塞的强度的磁场，柱塞的运动操作以打开断路器中的触点并将故障电流传送到VCR和TOCC并限制整个系统故障电流。

6. 发明授权

EP2248154B1 USE OF CHAINED IMPLANTS IN SOLAR CELLS 有权
标题翻译：使用太阳能电池链式注入
公开(公告)号：EP2248154B1
公开(公告)日：2015-05-06
申请号：EP09717800.8
申请日：2009-03-05
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： BATEMAN, Nicholas, P.t. , MURPHY, Paul, J. , SULLIVAN, Paul , GUPTA, Atul
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01J37/3171 , H01J37/32412 , H01J2237/0827 , H01J2237/202 , H01J2237/31711 , H01L21/26513 , H01L21/266 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521

7. 发明公开

EP2642512A3 Techniques for processing a substrate 审中-公开
标题翻译：一种用于处理衬底的方法
公开(公告)号：EP2642512A3
公开(公告)日：2014-03-19
申请号：EP13172459.3
申请日：2010-04-08
申请人： Varian Semiconductor Equipment Associates Inc.
发明人： Daniels, Kevin M. , Low, Russell J. , Riordon, Benjamin B.
IPC分类号： H01L21/266 , H01L31/18 , H01J37/317
CPC分类号： H01L31/068 , H01J2237/31711 , H01L21/266 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise directing an ion beam comprising a plurality of ions along an ion beam path, from an ion source to the substrate; disposing at least a portion of a mask in the ion beam path, between the ion source and the substrate; and translating one of the substrate and the mask relative to other one of the substrate and the mask.

8. 发明公开

EP2589063A1 HANDLING BEAM GLITCHES DURING ION IMPLANTATION OF WORKPIECES 审中-公开
标题翻译：硫磷BEAM功能障碍在离子注入过程WORKPIECES
公开(公告)号：EP2589063A1
公开(公告)日：2013-05-08
申请号：EP11743678.2
申请日：2011-06-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： LOW, Russell, J. , GUPTA, Atul , WEAVER, William, T.
IPC分类号： H01J37/317 , H01J37/304 , H01J37/20
CPC分类号： H01J37/20 , G21K5/10 , H01J37/304 , H01J37/3045 , H01J37/3171 , H01J2237/20285 , H01J2237/31703 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a First speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.

9. 发明公开

EP2497106A1 SELF-ALIGNED MASKING FOR SOLAR CELL MANUFACTURE 审中-公开
标题翻译：自对准覆盖的太阳能电池生产
公开(公告)号：EP2497106A1
公开(公告)日：2012-09-12
申请号：EP10779600.5
申请日：2010-11-02
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： BATEMAN, Nicholas, P.T. , MAYNARD, Helen, L. , RIORDON, Benjamin, B. , HATEM, Christopher, R. , RAMAPPA, Deepak
IPC分类号： H01L21/266 , H01L31/18
CPC分类号： H01L31/0682 , H01L21/266 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Various methods of utilizing the physical and chemical properly differences between amorphized and crystalline silicon are used to create masks that can be used for subsequent implants, in some embodiments, the difference in film growth between amorphous and crystalline silicon is used to create the mask, in other embodiments, the difference in reflectivity or light absorption between amorphous and crystalline silicon is used to create the mask, in other embodiments, differences in the characteristics of doped and undoped silicon is used to create masks.

10. 发明公开

EP2494605A2 REDUCING SURFACE RECOMBINATION AND ENHANCING LIGHT TRAPPING IN SOLAR CELLS 审中-公开
标题翻译：在SOLARZELLEN的VERBESSERUNG DER LICHTERFASSUNG的REDUZIERUNG DEROBERFLÄCHENREKOMBINATION
公开(公告)号：EP2494605A2
公开(公告)日：2012-09-05
申请号：EP10774386.6
申请日：2010-10-27
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： RAMAPPA, Deepak
IPC分类号： H01L31/0216
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022441 , H01L31/0682 , H01L31/1864 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： Methods of improving the anti - reflection properties of one or more dielectric layers ( 302, 303 ) and reducing surface recombination of generated carriers of a solar cell are disclosed. In some embodiments, dopants are introduced into the dielectric layers to improve their anti - reflection properties. In other embodiments, species ( 800 ) are introduced into the dielectric layers ( 302, 303 ) 9 to create electrical fields which repel the minority carriers away from the surface arid toward the contacts. In another embodiment, mobiles species are introduced to the anti - reflective coating, which cause carrier to be repelled from the surface of the solar cell. By creating a barrier at the surface of the solar cell, undesired recombination at the surface may be reduced.
摘要翻译：公开了改善一个或多个介电层的抗反射特性并减少太阳能电池的所产生的载流子的表面复合的方法。在一些实施例中，将掺杂剂引入电介质层以提高其抗反射性能。在其它实施例中，物质被引入到电介质层中以产生电场，其将少数载流子排斥离开表面并朝向接触点。在另一个实施方案中，将移动体物质引入到抗反射涂层中，这导致载体从太阳能电池的表面排斥。通过在太阳能电池的表面产生阻挡层，可能会降低表面处的不希望的复合。

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