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    • 2. 发明公开
    • Shadow mask implantation system
    • 阴影掩模植入系统
    • EP2814051A1
    • 2014-12-17
    • EP14176404.3
    • 2011-02-09
    • Intevac, Inc.
    • Chun, MoonAdibi, Babak
    • H01J37/317H01L21/266
    • H01J37/3171G03F1/20H01J2237/31711H01L21/266
    • An adjustable shadow mask implantation system comprising: an ion source configured to provide ions; a first occlusion mask having a first set of elongated openings substantially parallel to a first axis; and a second occlusion mask having a second set of elongated openings substantially parallel to the first axis, wherein the first occlusion mask and the second occlusion mask are configured such that the first set of elongated openings overlap with, but are offset from, the second set of elongated openings to form a resulting set of elongated openings through which ions from the ion source are selectively allowed to pass therethrough to a substrate where they are implanted, each elongated opening of the resulting set being smaller than each elongated opening of the first and second sets.
    • 一种可调节荫罩植入系统,包括:配置成提供离子的离子源; 第一阻塞掩模,其具有基本平行于第一轴线的第一组细长开口; 以及具有基本平行于所述第一轴线的第二组细长开口的第二阻塞掩模,其中所述第一阻塞掩模和所述第二阻塞掩模被配置成使得所述第一组细长开口与所述第二组重叠但偏离 的细长开口以形成最终的一组细长开口,来自离子源的离子通过该开口被选择性地允许穿过其到达其中它们被注入的衬底,所得到的组的每个细长开口比第一和第二 集。