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EP2669895A3 Stress-based techniques for detecting an imminent readfailure in a non-volatile memory array
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基本信息:
- 专利标题： Stress-based techniques for detecting an imminent readfailure in a non-volatile memory array
- 专利标题（中）：基于电压的技术在非易失性存储器阵列的检测的即将发生的读取错误的
- 申请号：EP13169541.3 申请日：2013-05-28
- 公开(公告)号：EP2669895A3 公开(公告)日：2015-01-14
- 发明人： Eguchi, Richard K. , He, Chen
- 申请人： Freescale Semiconductor, Inc.
- 申请人地址： 6501 William Cannon Drive West Austin, TX 78735 US
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： NXP USA, INC.
- 当前专利权人地址： NXP USA, INC.
- 代理机构： Ferro, Frodo Nunes
- 优先权： US201213483968 20120530
- 主分类号： G11C16/34
- IPC分类号： G11C16/34 ; G11C29/52 ; G11C29/06 ; G06F11/10 ; G11C29/04 ; G11C29/42
摘要：
A technique (700) for detecting an imminent read failure in a non-volatile memory array includes applying a bulk read stress to a plurality of cells of the non-volatile memory array (705) and determining whether the plurality of cells exhibit an uncorrectable error correcting code (ECC) read during an array integrity check at a margin read verify voltage level subsequent to the bulk read stress (718). The technique also includes providing an indication of an imminent read failure for the plurality of cells when the plurality of cells exhibit the uncorrectable ECC read during the array integrity check (720). In this case, the margin read verify voltage level is different from a normal read verify voltage level.
公开/授权文献:
IPC结构图谱:
| G | 物理 |
| --G11 | 信息存储 |
| ----G11C | 静态存储器 |
| ------G11C16/00 | 可擦除可编程序只读存储器 |
| --------G11C16/02 | .电可编程序的 |
| ----------G11C16/06 | ..辅助电路，例如，用于写入存储器的 |
| ------------G11C16/34 | ...编程状态的确定，例如，阈值电压、过编程或欠编程、保留 |