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1. 发明授权

EP3195060B1 PROJECTION LENS, PROJECTION EXPOSURE APPARATUS AND PROJECTION EXPOSURE METHOD FOR EUV MICROLITHOGRAPHY 有权
公开(公告)号：EP3195060B1
公开(公告)日：2018-09-05
申请号：EP15759468.0
申请日：2015-09-07
申请人： Carl Zeiss SMT GmbH
发明人： ANDRÉ, Stephan , GOLDE, Daniel , GRUNER, Toralf , RUOFF, Johannes , WABRA, Norbert , SCHÖMER, Ricarda , SCHNEIDER, Sonja
IPC分类号： G03F7/20
CPC分类号： G03F7/70266 , G03F7/7015 , G03F7/70233 , G03F7/70258
摘要： A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength λ from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.

2. 发明授权

EP2854159B1 Multilayer film reflector and X-ray exposure system 有权转让
公开(公告)号：EP2854159B1
公开(公告)日：2018-06-20
申请号：EP14186179.9
申请日：2004-05-24
申请人： Nikon Corporation
发明人： Shiraishi, Masayuki
IPC分类号： H01L21/027 , G03F7/20 , G21K1/06 , G02B5/08
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70233 , G03F7/70958 , G21K1/062 , G21K2201/067 , H01L21/0332
摘要： The present invention makes it possible to obtain a multilayer film reflective mirror 61 comprising a first multilayer film 67 which is formed by alternately laminating Mo layers 671 and Si layers 673 on a substrate 63, and a second multilayer film 65 which is formed on top of the first multilayer film 67, and which is formed by alternately laminating Mo layers 651 and Si layers 653, wherein the thickness of the Mo layers in the first multilayer film is substantially equal to or smaller than the thickness of the Mo layers in the second multilayer film, and the ratio of the thickness of the Mo layers to the thickness of the Si layers in the first multilayer film is different from the ratio of these thicknesses in the second multilayer film. As a result, a multilayer film reflective mirror with a low internal stress in which a drop in the reflectivity is suppressed can be obtained.

3. 发明公开

EP3195060A1 PROJECTION LENS, PROJECTION EXPOSURE APPARATUS AND PROJECTION EXPOSURE METHOD FOR EUV MICROLITHOGRAPHY 有权
标题翻译：投影透镜，投影曝光装置和EUV微影摄影的投影曝光方法
公开(公告)号：EP3195060A1
公开(公告)日：2017-07-26
申请号：EP15759468.0
申请日：2015-09-07
申请人： Carl Zeiss SMT GmbH
发明人： ANDRÉ, Stephan , GOLDE, Daniel , GRUNER, Toralf , RUOFF, Johannes , WABRA, Norbert , SCHNEIDER, Ricarda , SCHNEIDER, Sonja
IPC分类号： G03F7/20
CPC分类号： G03F7/70266 , G03F7/7015 , G03F7/70233 , G03F7/70258
摘要： A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength λ from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.
摘要翻译：公开了一种投影透镜，用于经由从远紫外线范围具有工作波长λ的电磁辐射将布置在投影透镜的物平面中的图案成像到投影透镜的图像平面中。投影透镜包括多个反射镜，该反射镜具有布置在物平面和像平面之间的投影光束路径中的镜面，使得物平面中的掩模的图案可经由反射镜成像到像平面中。在与扫描方向平行的第一方向上的第一成像比例尺在绝对值方面小于在垂直于第一方向的第二方向上的第二成像比例尺。投影透镜还包括用于校正由标线位移引起的散光波前像差部分的动态波前操纵系统。

4. 发明授权

EP2541324B1 Optical system 有权
标题翻译：光学系统
公开(公告)号：EP2541324B1
公开(公告)日：2016-04-13
申请号：EP12178143.9
申请日：2009-02-28
申请人： Carl Zeiss SMT GmbH
发明人： Zellner, Johannes , Mann, Hans-Jürgen , Endres, Martin
IPC分类号： G03F7/20
CPC分类号： G03F7/70316 , G02B17/0663 , G03F7/702 , G03F7/70233

5. 发明公开

EP2513697A2 IMAGING OPTICS 有权
标题翻译：成像光学
公开(公告)号：EP2513697A2
公开(公告)日：2012-10-24
申请号：EP10792877.2
申请日：2010-12-03
申请人： Carl Zeiss SMT GmbH
发明人： MANN, Hans-Jürgen , ENDRES, Martin , SHAFER, David , WARM, Berndt , HERKOMMER, Alois
IPC分类号： G02B17/06
CPC分类号： G03F7/70233 , G02B17/0652 , G03F7/702 , G03F7/70275
摘要： An imaging optics is provided for lithographic projection exposure for guiding a bundle of imaging light with a wavelength shorter than 193 nm via a plurality of mirrors for beam-splitter-free imaging of a reflective object in an object field in an object plane into an image field in an image plane. An object field point has a central ray angle which is smaller than 3°. At least one of the mirrors is a near-field mirror. The imaging optics which can allow for high-quality imaging of a reflective object.
摘要翻译：一种用于光刻投影曝光的成像光学器件（16），用于借助多个反射镜（M1至M6）引导波长短于193nm的成像光束（3），用于反射物体的无分束器成像（12）在物面（5）中的物场（4）中转换成像面（18）中的像场（17），具有小于3°的中心光线角度（α）的物场点。至少一个反射镜（M1至M6）是近场反射镜。其结果是成像光学器件可以对反射物体进行高质量成像。

6. 发明公开

EP2513686A1 REFLECTIVE OPTICAL ELEMENT FOR EUV LITHOGRAPHY 有权
标题翻译： OPTISCHES REFLEXIONSELEMENTFÜREUV-LITHOGRAPHIE
公开(公告)号：EP2513686A1
公开(公告)日：2012-10-24
申请号：EP10796337.3
申请日：2010-12-13
申请人： Carl Zeiss SMT GmbH
发明人： WEBER, Jörn
IPC分类号： G02B5/08 , G03F7/20
CPC分类号： G02B5/0891 , B82Y30/00 , G02B1/10 , G02B1/105 , G02B1/14 , G02B5/0816 , G03F7/70233 , G03F7/70316 , G03F7/70958
摘要： A stress-reduced reflective optical element for a working wavelength in the soft X-ray and extreme ultraviolet wavelength range includes a first multilayer system (4) of at least two alternating materials (41, 42) having different real parts of the refractive index at the working wavelength on a substrate (2), which exerts a layer stress on the substrate (2), and comprising a second multilayer system (6) of at least two alternating materials (61, 62) on a substrate (2), which exerts an opposed layer stress on the substrate (2) and is arranged between the first multilayer system (4) and the substrate (2), wherein a first (61) of the at least two materials of the second multilayer system (6) is interrupted by layers (62) having a thickness of up to 1 nm of the at least one further material of the second multilayer system (6) at such distances that the first material is present in an amorphous state.
摘要翻译：用于在软X射线和极紫外波长范围内的工作波长的应力减小反射光学元件包括：至少两个交替材料（41,42）的第一多层体系（4），其具有不同的实部折射率衬底（2）上的工作波长，其在衬底（2）上施加层应力，并且包括在衬底（2）上的至少两个交替材料（61,62）的第二多层系统（6），其中在所述基板（2）上施加相对的层应力，并且布置在所述第一多层体系（4）和所述基板（2）之间，其中所述第二多层体系（6）的所述至少两种材料中的第一（61）由第二层叠系统（6）的至少一种其它材料的厚度高达1nm的层（62）以这样的距离间隔使第一材料以非晶状态存在。

7. 发明公开

EP2490227A1 Multilayer film reflector and X-ray exposure system 有权转让
标题翻译： Mehrschichtfilmreflektor undRöntgenstrahlexpositionssystem
公开(公告)号：EP2490227A1
公开(公告)日：2012-08-22
申请号：EP12167832.0
申请日：2004-05-24
申请人： Nikon Corporation
发明人： Shiraishi, Masayuki
IPC分类号： G21K1/06 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70233 , G03F7/70958 , G21K1/062 , G21K2201/067 , H01L21/0332
摘要： A multilayer film reflector (61) having a first multilayer film (67) obtained by forming Mo layers (671) and Si layers (673) alternatively on a substrate (63), and a second multilayer film (65) obtained by forming Mo layers (651) and Si layers (653) alternatively on the first multilayer film (67), wherein the Mo layer in the first multilayer film has a thickness substantially equal to or smaller than that of the Mo layer in the second multilayer film and the ratio of thickness between the Mo layer and Si layer in the first multilayer is different from the ratio of thickness in the second multilayer film. A multilayer film reflector of low internal stress in which lowering of reflectivity is suppressed can thereby be obtained.
摘要翻译：具有通过在基板（63）上交替形成Mo层（671）和Si层（673）而获得的第一多层膜（67）的多层膜反射器（61）和通过形成Mo层而获得的第二多层膜（651）和Si层（653），其中所述第一多层膜中的Mo层的厚度基本上等于或小于所述第二多层膜中的Mo层的厚度，并且所述比例第一层中的Mo层和Si层之间的厚度不同于第二多层膜中的厚度比。从而可以获得抑制反射率降低的低内应力的多层膜反射体。

8. 发明授权

EP1630856B1 MUTILAYER FILM REFLECTOR AND X-RAY EXPOSURE SYSTEM 有权转让
标题翻译：多层膜和反光镜射线照射系统
公开(公告)号：EP1630856B1
公开(公告)日：2012-06-13
申请号：EP04734613.5
申请日：2004-05-24
申请人： NIKON CORPORATION
发明人： SHIRAISHI, Masayuki; c/o NIKON CORPORATION
IPC分类号： H01L21/027 , G03F7/20 , G21K1/06 , G02B5/08
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70233 , G03F7/70958 , G21K1/062 , G21K2201/067 , H01L21/0332
摘要： The present invention makes it possible to obtain a multilayer film reflective mirror 61 comprising a first multilayer film 67 which is formed by alternately laminating Mo layers 671 and Si layers 673 on a substrate 63, and a second multilayer film 65 which is formed on top of the first multilayer film 67, and which is formed by alternately laminating Mo layers 651 and Si layers 653, wherein the thickness of the Mo layers in the first multilayer film is substantially equal to or smaller than the thickness of the Mo layers in the second multilayer film, and the ratio of the thickness of the Mo layers to the thickness of the Si layers in the first multilayer film is different from the ratio of these thicknesses in the second multilayer film. As a result, a multilayer film reflective mirror with a low internal stress in which a drop in the reflectivity is suppressed can be obtained.

9. 发明授权

EP1930772B1 Projection objectives having mirror elements with reflective coatings 失效转让
标题翻译：投影透镜与反射涂层的反射镜元件
公开(公告)号：EP1930772B1
公开(公告)日：2011-04-13
申请号：EP07023396.0
申请日：2007-12-04
申请人： Carl Zeiss SMT GmbH
发明人： Chan, Danny Dr. , Mann, Hans-Jürgen Dr.
IPC分类号： G03F7/20
CPC分类号： G03F7/70958 , G02B5/0891 , G03F7/70233 , G03F7/70891

10. 发明授权

EP1938150B1 KOLLEKTOR FÜR BELEUCHTUNGSSYSTEME MIT EINER WELLENLÄNGE 有权
标题翻译：收集器，用于照明系统的波长
公开(公告)号：EP1938150B1
公开(公告)日：2011-03-23
申请号：EP06806336.1
申请日：2006-10-17
申请人： Carl Zeiss SMT GmbH
发明人： HAINZ, Joachim , ENDRES, Martin , SINGER, Wolfgang , KLEEMANN, Bernd , BADER, Dieter
IPC分类号： G03F7/20
CPC分类号： G03F7/70233 , B82Y10/00 , G03F7/70166 , G03F7/70175 , G03F7/702
摘要： The invention relates to a collector for lighting systems with a wavelength of ≤ 193 nm, preferably ≤ 126 nm, particularly preferred EUV radiation, comprising: a first mirror shell (1212.1) and a second mirror shell (1212.2), the first mirror shell (1212.1) being placed inside the second mirror shell (1212.2), and the first mirror shell (1212.1) and/or the second mirror shell (1212.2) have/has a rotationally symmetric and a non-rotationally symmetric portion.

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