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    • 1. 发明公开
    • PHOTOLITHOGRAPHIC PATTERNING OF ELECTRONIC DEVICES
    • 电子器件的光刻成像
    • EP3238288A1
    • 2017-11-01
    • EP15873765.0
    • 2015-12-23
    • Orthogonal Inc.
    • ROBELLO, Douglas, RobertO'TOOLE, Terrence, RobertBYRNE, Frank, XavierFREEMAN, Diane, Carol
    • H01L51/56H01L21/027
    • A method of patterning a device includes forming a fluorinated photopolymer layer over a device substrate. The photopolymer layer has a lower portion proximate the device substrate and an upper portion distal the device substrate. The fluorinated photopolymer layer includes a radiation-absorbing dye and a fluorinated photopolymer having a solubility-altering reactive group. The photopolymer layer is exposed to patterned radiation to form exposed and unexposed areas in accordance with the patterned radiation and a developed structure is formed by removing unexposed areas using a developing agent that includes a first fluorinated solvent. The lower portion of the exposed area of the photopolymer layer has a dissolution rate in the developing agent that is at least 5 times higher than a dissolution rate for the upper portion.
    • 图案化器件的方法包括在器件衬底上形成氟化光聚合物层。 光聚合物层具有靠近器件衬底的下部和远离器件衬底的上部。 氟化光聚合物层包括辐射吸收染料和具有溶解度改变反应性基团的氟化光聚合物。 根据图案化的辐射,光敏聚合物层暴露于图案化的辐射以形成曝光区域和未曝光区域,并且通过使用包含第一氟化溶剂的显影剂除去未曝光区域形成显影结构。 光聚合物层的曝光区域的下部在显影剂中的溶解速率比上部的溶解速率高至少5倍。
    • 5. 发明公开
    • PHOTOLITHOGRAPHIC PATTERNING OF DEVICES
    • 器件的光刻图案设计
    • EP3175495A1
    • 2017-06-07
    • EP15826514.0
    • 2015-07-31
    • Orthogonal Inc.
    • O'TOOLE, Terrence RobertDEFRANCO, John AndrewBYRNE, Frank Xavier
    • H01L51/56H01L21/027
    • A method of patterning a device is disclosed using a resist precursor structure having at least two fluoropolymer layers. A first fluoropolymer layer includes a first fluoropolymer material having a fluorine content of at least 50% by weight and is substantially soluble in a first hydrofluoroether solvent or in a first perfluorinated solvent, but substantially less soluble in a second hydrofluoroether solvent relative to both the first hydrofluoroether and the first perfluorinated solvent. The second fluoropolymer layer includes a second fluoropolymer material having a fluorine content less than that of the first fluoropolymer material and is substantially soluble in the first or second hydrofluoroether solvents, but substantially less soluble in the first perfluorinated solvent relative to both the first and second hydrofluoroether solvents.
    • 公开了使用具有至少两个氟聚合物层的抗蚀剂前体结构来图案化器件的方法。 第一含氟聚合物层包括含氟量至少为50重量%的第一含氟聚合物材料并且基本上可溶于第一氢氟醚溶剂或第一全氟溶剂中,但相对于第一含氟聚合物材料的第一氢氟醚溶剂 氢氟醚和第一种全氟化溶剂。 第二氟聚合物层包括含氟量低于第一含氟聚合物材料的第二含氟聚合物材料,并且基本上溶于第一或第二氢氟醚溶剂中,但相对于第一和第二氢氟醚二者在第一全氟溶剂中可溶性要低得多 溶剂。