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1. 发明授权

EP3029513B1 PROCEDE DE FABRICATION D'UN GUIDE D'ONDE INCLUANT UNE JONCTION SEMICONDUCTRICE 有权
公开(公告)号：EP3029513B1
公开(公告)日：2018-10-10
申请号：EP15197034.0
申请日：2015-11-30
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： FOURNIER, Maryse , FOWLER, Daivid , GRELLIER, Edouard , IOTTI, Lorenzo
IPC分类号： G02F1/025 , G02F1/225 , G02B6/134 , G02B6/136
CPC分类号： G02B6/1347 , G02B6/00 , G02B6/134 , G02B6/1342 , G02B6/136 , G02F1/025 , G02F1/2257 , G02F2001/212 , H01L2223/6627 , H01L2223/6633

2. 发明公开

EP1980884A3 Optical waveguide apparatus and method for manufacturing the same 有权
标题翻译：光波导器件及其制造方法
公开(公告)号：EP1980884A3
公开(公告)日：2012-11-28
申请号：EP08005515.5
申请日：2008-03-25
申请人： Shin-Etsu Chemical Company, Ltd.
发明人： Akiyama, Shoji , Kubota, Yoshihiro , Ito, Atsuo , Tanaka, Koichi , Tobisaka, Yuuji , Kawai, Makoto
IPC分类号： G02B6/134 , G02B6/42 , G02F1/025
CPC分类号： G02B6/132 , G02B6/1347 , G02F1/0126 , G02F1/025 , G02F2202/105 , G02F2203/48 , Y10S438/967
摘要： An optical waveguide apparatus having a very simple structure that can modulate a signal light guided through an optical waveguide is provided. A photoresist 13 is applied to an upper side of an SOI film 12, a photoresist mask 14 is formed, and the SOI film in a region that is not covered with the photoresist mask 14 is removed by etching to obtain an optical waveguide 15 having a single-crystal silicon core. Further, a light emitting device capable of irradiating the single-crystal silicon core with a light having a wavelength of 1.1 µm or below is provided on a back surface side of a quartz substrate 20 to provide an optical waveguide apparatus. When the light emitting device 30 does not apply a light, the light guided through the optical waveguide 15 is guided as it is. However, when the light emitting device 30 applies a light to form each pair of an electron and a hole in the irradiated region 16, the light guided through the optical waveguide 15 is absorbed by the pair of an electron and a hole, thereby enabling switching (modulation) for turning ON/OFF an optical signal depending on presence/absence (ON or OFF) of application of the light from the light emitting device 30.

3. 发明公开

EP1530734A2 METHOD FOR WRITING A PLANAR WAVEGUIDE HAVING GRATINGS OF DIFFERENT CENTER WAVELENGTHS 审中-公开
标题翻译： METHOD FOR REGISTERED平面波导WHAT GRID具有不同的响应有波长
公开(公告)号：EP1530734A2
公开(公告)日：2005-05-18
申请号：EP03765489.4
申请日：2003-07-03
申请人： INTEL CORPORATION
发明人： GRUNNET-JEPSEN, Anders , JOHNSON, Alan , SWEETSER, John
IPC分类号： G02B6/12
CPC分类号： G02B6/124 , G02B6/12007 , G02B6/1228 , G02B6/125 , G02B6/132 , G02B6/134 , G02B6/1347 , G02B6/136 , G02B2006/12078 , G02B2006/12176
摘要： Multiple Bragg gratings (712, 714, 716, 718, 720) are fabricated in a single planar lightwave circuit platform (750). The gratings have nominally identical grating spacing but different center wavelengths, which are produced using controlled photolithographic processes and/or controlled doping to control the effective refractive index of the gratings. The gratings may be spaced closer together than the height of the UV light pattern used to write the gratings.

4. 发明授权

EP0986768B1 STREIFENWELLENLEITER UND VERFAHREN ZU SEINER HERSTELLUNG 失效
标题翻译： STRIP纤维及其制造方法
公开(公告)号：EP0986768B1
公开(公告)日：2003-09-10
申请号：EP98921328.5
申请日：1998-06-03
申请人： Rainbow Photonics AG
发明人： FLUCK, Daniel , PLISKA, Thomas , GÜNTER, Peter
IPC分类号： G02B6/12
CPC分类号： G02B6/1347 , G02B6/122 , G02B6/136 , G02B2006/12097
摘要： The invention relates to a method for producing a microstrip line (4), based on the following steps: a) implanting high-energy light ions into a crystal, b) placing a mask over the surface (11.1) of said crystal, said mask defining strips, and c) etching a channel (41) into said surface (11.1) of the crystal. The ion implantation step (a) causes a layer (14) with a lower refractive index to form at a depth of a few micrometres below the surface of the crystal (11.1). This refractive index barrier (14) restricts the light in a direction perpendicular to the crystal surface (11.1). The side barriers (43.1 and 43.2) of the channel guide the light from the side.

5. 发明授权

EP0728318B1 FABRICATION D'UN GUIDE D'ONDES ENTERRE A PLUSIEURS PROFONDEURS D'ENTERREMENT 失效
标题翻译：生产具有不同的穿透深度埋纤维
公开(公告)号：EP0728318B1
公开(公告)日：1997-12-17
申请号：EP95900177.7
申请日：1994-10-31
申请人： SCHNEIDER ELECTRIC SA
发明人： KEVORKIAN, Antoine , PERSEGOL, Dominique
IPC分类号： G02B6/134
CPC分类号： G02B6/122 , G02B6/1345 , G02B6/1347 , G02B2006/12119 , G02B2006/12173 , G02B2006/12185
摘要： Method of locally embedding a waveguide (1) in a substrate (2). A mask (3) is arranged on the upper face of the substrate. An edge (9) of the mask obliquely intersects, at a low predetermined angle A, the waveguide to define a partially masked transition portion (1c) between a non-masked portion (1b) and a fully masked portion (1a) of the waveguide. After a stage in which the waveguide is embedded in the substrate, the mask (8) is withdrawn. The portion (1b) of the waveguide is thereby embedded at a depth greater than portion (1a), portion (1c) forming a gradual adiabatic transition between both portions. The method is useful in the manufacture of sensors.

6. 发明公开

EP0660380A2 Bandgap tuning of semiconductor quantum well structures 失效
标题翻译：调谐半导体量子阱结构的带隙。
公开(公告)号：EP0660380A2
公开(公告)日：1995-06-28
申请号：EP94309534.9
申请日：1994-12-20
申请人： NATIONAL RESEARCH COUNCIL CANADA
发明人： Charbonneau, Sylvain , Koteles, Emil S.
IPC分类号： H01L21/22 , H01L33/00 , H01S3/19
CPC分类号： B82Y20/00 , G02B6/1347 , G02B2006/12169 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02694 , H01L21/182 , H01S5/3413 , H01S5/3414
摘要： A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffuslon at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

7. 发明授权

EP0132206B1 Process for fabricating optical wave-guiding components and components made by the process 失效
标题翻译：制造光波导引组件和组件的方法
公开(公告)号：EP0132206B1
公开(公告)日：1992-04-08
申请号：EP84401524.8
申请日：1984-07-19
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Strain, Robert J.
IPC分类号： G02B6/12
CPC分类号： G02B6/1347

8. 发明公开

EP2177944A1 Procédé de fabrication d'un modulateur électro-optique latéral sur silicium à zones implantées auto-alignées 有权
标题翻译：具有自对准掺杂区上的硅制造的横向电光调制器的方法
公开(公告)号：EP2177944A1
公开(公告)日：2010-04-21
申请号：EP09172882.4
申请日：2009-10-13
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： Fedeli, Jean-Marc
IPC分类号： G02F1/025 , H01L21/266 , G02B6/134
CPC分类号： G02F1/025 , G02B6/1347 , G02B6/136 , G02B2006/12061 , G02B2006/12097 , G02B2006/12142 , G02F2001/0151 , G02F2201/063 , H01L21/26513 , H01L21/26586
摘要： L'invention concerne un procédé de fabrication d'un modulateur électro-optique latéral sur un substrat SOI, le modulateur comprenant un guide d'onde en arête formé dans la couche mince de silicium du substrat SOI, le guide d'onde en arête étant placé entre une région dopée P et une région dopée N formées dans la couche mince de silicium, le guide d'onde en arête occupant une région intrinsèque de la couche mince, au moins une zone dopée P étant formée dans l'arête et perpendiculairement au substrat. Le procédé comprend des étapes de masquage de la couche mince de silicium pour y définir l'arête du guide d'onde, de gravure de l'arête, de masquage de la couche mince de silicium pour délimiter les parties à doper P, de dopage des parties à doper P, de masquage de la couche mince de silicium pour délimiter la région à doper N et de dopage de la région à doper N. Les étapes de masquage mettent en ouvre un masque dur dont le motif permet de définir l'arête du guide d'onde, la zone à doper P dans l'arête du guide d'onde et la limite de la région dopée N par rapport à l'arête du guide d'onde.
摘要翻译：的方法包括将图案用于限定一脊形波导，P掺杂区域和N掺杂区域掩蔽使用硬掩模（206）的薄硅膜的层（204）。波导是存在于硅层的边缘，并且所述掺杂区域，其中该边缘波导占据在所述薄层的本征区域之间放置。在P掺杂区域，本征区和N掺杂区域构成PIN二极管结构，其中在P掺杂区域中的一个的边缘与垂直于基板上形成。硬掩模是由硬掩模层的蚀刻而形成。该方法包括掩蔽使用硬掩模（206），与图案用于限定一脊形波导，P掺杂区域和N掺杂区的薄硅膜的层（204）。波导是存在于硅层的边缘，并且所述掺杂区域，其中该边缘波导占据在所述薄层的本征区域之间放置。在P掺杂区域，本征区和N掺杂区域构成PIN二极管结构，其中在P掺杂区域中的一个的边缘与垂直于基板上形成。硬掩模是由硬掩模层的蚀刻而形成。所述硬掩模图案具有外边缘做限定内部狭缝波导边缘没有定义在波导边缘被掺杂的区域。形成在硬掩模的第一树脂掩模，蚀刻所述薄的硅层的未被掩蔽部分，以获得波导的边缘用于去除第一树脂掩模，形成第二树脂掩模的方法还包括做掩模所做的是该结构的部不掺杂的，进行该薄硅层的非掩蔽部分的P型掺杂的，除去第二树脂掩模，形成所述结构的第三树脂掩模掩蔽部分并没有被掺杂，进行的N型掺杂通过硅的薄层非掩蔽部分，在去除第三树脂掩模;以及去除硬掩模，所述第一树脂掩模覆盖硬掩模的狭缝，并从硬掩模的外边缘限定了波导边缘收缩。第二树脂掩模包括的边缘从硬掩模的狭缝的边缘收缩的狭缝。上的区域的一侧的树脂的第三掩模的边缘为N掺杂被从对应边缘缩水硬掩模。N型掺杂通过等离子体的离子注入沿0°〕进行关于垂直方向上的SOI衬底用于掺杂波导边缘与n掺杂区的一侧。在薄的硅层进行蚀刻的步骤，并且所述第一树脂掩模的去除步骤之间设置硬掩模的部分的完整的蚀刻。

9. 发明公开

EP1342112A2 GUIDE D'ONDE COMPORTANT UN CANAL DANS UN SUBSTRAT OPTIQUE 审中-公开
标题翻译：与通道光学衬底中波导
公开(公告)号：EP1342112A2
公开(公告)日：2003-09-10
申请号：EP01270789.9
申请日：2001-12-14
申请人： Ion Beam Services
发明人： TISSERAND, Stéphane , ROUX, Laurent , TORREGROSSA, Frank , FLORY, François , ESCOUBAS, Ludovic , DROUARD, Emmanuel
IPC分类号： G02B6/134
CPC分类号： G02B6/122 , G02B6/1347 , G02B2006/121
摘要： The invention concerns a waveguide comprising a channel (12) on an optical substrate (11), the refractive index of said channel being higher than that of the substrate. Said waveguide comprises at least a guide layer (13) provided on the channel, the index of said guide layer being higher than that of the substrate. In addition, the channel (12) is integrated in the substrate (11). Advantageously, the guide further comprises a covering layer (14) arranged on the guide layer (13), the index of said covering layer being less than that of the guide layer and that of the channel. The invention also concerns a method for making said waveguide.

10. 发明公开

EP0660380A3 Bandgap tuning of semiconductor quantum well structures 失效
标题翻译：调谐半导体量子阱结构的带隙。
公开(公告)号：EP0660380A3
公开(公告)日：1996-01-03
申请号：EP94309534.9
申请日：1994-12-20
申请人： NATIONAL RESEARCH COUNCIL CANADA
发明人： Charbonneau, Sylvain , Koteles, Emil S.
IPC分类号： H01L21/22 , H01L33/00 , H01S3/19
CPC分类号： B82Y20/00 , G02B6/1347 , G02B2006/12169 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02694 , H01L21/182 , H01S5/3413 , H01S5/3414
摘要： A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffuslon at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

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