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    • 6. 发明公开
    • A method of processing a substrate made of a ferroelectric single crystalline material
    • 加工强电介质单晶材料的基材的方法
    • EP0936481A3
    • 2000-10-25
    • EP99301186.5
    • 1999-02-17
    • NGK INSULATORS, LTD.
    • Iwai, MakotoKawaguchi, TatsuoImaeda, Minoru
    • G02B6/136G02F1/37
    • G02B6/1345G02F1/3558G02F1/3775
    • A method of processing a substrate (1) made of a ferroelectric single crystalline material, including the steps of forming a desired proton-exchanged layer (2) in the substrate by proton-exchanging a portion of the substrate, and selectively removing the proton-exchanged layer to form a concave ditch structure (3) in the ferroelectric single crystalline substrate. The desired proton-exchange layer is formed using an acid containing a lithium salt as a proton-exchanging source and the surface of the substrate from which the concave ditch structure is formed is an X-cut surface or a Z-cut surface, as a main surface, of the ferroelectric single crystalline material used as the substrate. The concave ditch structure so formed can have its depth equal to or larger than its half opening width.
    • 处理基板的方法,(1)由铁电单晶材料的方法,包括形成由质子交换基板的一部分,并且选择性地去除所述质子在衬底一个希望的质子交换层(2)的步骤 交换层,以形成在铁电体单晶基板的凹沟结构(3)。 所需的质子交换层使用上酸含有锂盐作为质子交换源和从该凹沟结构是形成在所述基板的表面的X切割表面或Z切表面形成的,作为 主表面用作基片的强电介质单晶材料。 凹沟结构如此形成可以有其深度等于或大于它的半开口宽度大。