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1. 发明公开

EP3134562A1 IRON BORON ALLOY COATINGS AND A PROCESS FOR THEIR PREPARATION 有权
标题翻译： EISEN-BOR-LEGIERUNGSBESCHICHTUNGEN UND VERFAHREN ZU DEREN HERSTELLUNG
公开(公告)号：EP3134562A1
公开(公告)日：2017-03-01
申请号：EP15710183.3
申请日：2015-03-17
申请人： Atotech Deutschland GmbH
发明人： BLICKENSDERFER, Jacob , AKOLKAR, Rohan , ALTEMARE, Paige , THIEL, Kay-Oliver , SCHREIER, Hans-Jürgen
IPC分类号： C23C18/50
CPC分类号： C23C18/50 , C23C18/1633 , C23C18/1675 , C23C18/1682
摘要： An aqueous plating bath for the electroless deposition of iron boron alloy coatings, characterized in that it comprises at least one iron ion source, at least one boron based reducing agent, at least one complexing agent, at least one pH buffer and at least one base wherein its pH value is 11 or higher and the molar ratio of the boron based reducing agents in relation to the iron ions in the aqueous plating bath is at least 6:1. Also, a process for the use of said aqueous plating bath is disclosed. The aqueous plating bath according to the invention shows good stability and plating rate and yields glossy and homogeneous iron boron alloy coatings on various substrates. It is an advantage of the plating bath that it does not require any sacrificial anodes.
摘要翻译：一种用于铁硼合金涂层的无电沉积的镀液，其特征在于，其包含至少一种铁离子源，至少一种硼基还原剂，至少一种络合剂，至少一种pH缓冲剂和至少一种碱其中pH值为11或更高，并且硼基还原剂相对于含水电镀浴中铁离子的摩尔比至少为6:1。此外，公开了使用所述含水电镀液的方法。根据本发明的电镀浴显示出良好的稳定性和电镀速率，并且在各种基材上产生光泽均匀的铁硼合金涂层。电镀槽的优点是不需要任何牺牲阳极。

2. 发明公开

EP2067880A1 ELECTROLESS PLATING METHOD 审中-公开
标题翻译： VERFAHREN ZUR STROMLOSEN METALLABSCHEIDUNG
公开(公告)号：EP2067880A1
公开(公告)日：2009-06-10
申请号：EP07830426.8
申请日：2007-10-24
申请人： S.E.S. Company Limited , Miyata, Seizo
发明人： MIYATA, Seizo , SHIMIZU, Tetsuya , TAJIMA, Hisayoshi , SONE, Masato
IPC分类号： C23C18/31 , H01L21/288
CPC分类号： C23C18/00 , C23C18/1682 , C23C18/1685 , C23C18/31 , H01L21/288 , H01L21/76877
摘要： This invention provides an electroless plating method comprising electrolessly plating the surface of a metal base sample using a supercritical fluid or a subcritical fluid in such a state that a metal powder is dispersed in an electroless plating liquid. According to this method, a homogeneous and thick plating layer is formed in a short time by taking advantage of an induction eutectoid phenomenon. In the electroless plating method, the metal powder may have an average particle diameter of not less than 1 nm and not more than 100 &mgr;m, and the electroless plating method may also be applied to a damascene process or a dual damascene process which is a method for forming a fine metal wiring within a semiconductor element. The above constitution can provide an electroless plating method which can realize the formation of an even film by electroless plating in a short time using a subcritical fluid or a supercritical fluid by taking advantage of an induction eutectoid phenomenon.
摘要翻译：本发明提供了一种化学镀方法，其包括使金属粉末分散在无电镀液中的状态下使用超临界流体或亚临界流体对金属基体样品的表面进行无电镀。根据该方法，通过利用感应共析现象，在短时间内形成均匀且厚的镀层。在化学镀方法中，金属粉末的平均粒径可以不小于1nm且不大于100μm，并且化学镀方法也可以应用于镶嵌工艺或双镶嵌工艺，其是在半导体元件内形成精细金属布线的方法。上述结构可以提供一种化学镀方法，其可以通过利用诱导共析现象利用亚临界流体或超临界流体在短时间内通过化学镀来实现均匀的膜的形成。

3. 发明公开

EP0811083A1 ELECTROLESS DEPOSITION OF METAL FILMS WITH SPRAY PROCESSOR 失效
标题翻译：喷雾处理器金属膜功耗无线应用
公开(公告)号：EP0811083A1
公开(公告)日：1997-12-10
申请号：EP96945627.0
申请日：1996-12-18
申请人： FSI International
发明人： SHACHAM-DIAMAND, Yosi , NGUYEN, Vinh , DUBIN, Valery
IPC分类号： C23C18 , H01L21
CPC分类号： C23C18/405 , C23C18/1619 , C23C18/1658 , C23C18/166 , C23C18/1676 , C23C18/1682 , C23C18/1692
摘要： Electroless plating of very thin metal films, such as copper, is accomplished with a spray processor. Atomized droplets or a continuous stream of an electroless plating solution are sprayed on a substrate. The electroless plating solution may be prepared by mixing a reducing solution and a metal stock solution immediately prior to the spraying. The deposition process may be carried out in an apparatus which includes metal stock solution and reducing reservoirs, a mixing chamber for forming the plating solution, optionally an inert gas or air (oxygen) source, a process chamber in which the solution is sprayed on the substrate and a control system for providing solutions to the mixing chamber and the process chamber in accordance with a predetermined program for automated mixing and spraying of the plating solution. The process can be used to form metal films as thin as 100 Å and these films have low resistivity values approaching bulk values, low surface roughness, excellent electrical and thickness uniformity and mirror-like surface. Low temperature annealing may be used to further improve electrical characteristics of the deposited films. The thin metal films produced by the disclosed process can be used in semiconductor wafer fabrication and assembly, and in preparation of thin film discs, thin film heads, optical storage devices, sensor devices, microelectromachined sensors (MEMS) and actuators, and optical filters.

4. 发明授权

EP0448138B1 Method for the electroless deposition of a metal layer on a flat article from a metallisation liquid 失效
标题翻译：一种用于由金属化的手段扁平的物体上的金属层的无电沉积方法。
公开(公告)号：EP0448138B1
公开(公告)日：1995-12-13
申请号：EP91200259.9
申请日：1991-02-08
申请人： Philips Electronics N.V.
发明人： Legierse, Petrus Egidius Jacobus , de Boer, Paulus Gerhardus Johannes , Baten, Jacobus Henricus
IPC分类号： C23C18/16
CPC分类号： C23C18/1676 , C23C18/1653 , C23C18/1669 , C23C18/1678 , C23C18/168 , C23C18/1682 , C23C18/1889

5. 发明授权

EP3134562B1 PROCESS FOR THE PREPARATION OF IRON BORON ALLOY COATINGS AND PLATING BATH THEREFOR 有权
公开(公告)号：EP3134562B1
公开(公告)日：2018-12-26
申请号：EP15710183.3
申请日：2015-03-17
申请人： Atotech Deutschland GmbH
发明人： BLICKENSDERFER, Jacob , AKOLKAR, Rohan , ALTEMARE, Paige , THIEL, Kay-Oliver , SCHREIER, Hans-Jürgen
IPC分类号： C23C18/16 , C23C18/50
CPC分类号： C23C18/50 , C23C18/1633 , C23C18/1675 , C23C18/1682
摘要： An aqueous plating bath for the electroless deposition of iron boron alloy coatings, characterized in that it comprises at least one iron ion source, at least one boron based reducing agent, at least one complexing agent, at least one pH buffer and at least one base wherein its pH value is 11 or higher and the molar ratio of the boron based reducing agents in relation to the iron ions in the aqueous plating bath is at least 6:1. Also, a process for the use of said aqueous plating bath is disclosed. The aqueous plating bath according to the invention shows good stability and plating rate and yields glossy and homogeneous iron boron alloy coatings on various substrates. It is an advantage of the plating bath that it does not require any sacrificial anodes.

6. 发明公开

EP1579029A3 METHOD AND APPARATUS FOR ELECTROLESS DEPOSITION WITH TEMPERATURE-CONTROLLED CHUCK 审中-公开
标题翻译：具有温度控制卡盘的无电沉积的方法和设备
公开(公告)号：EP1579029A3
公开(公告)日：2005-12-14
申请号：EP03795630.7
申请日：2003-08-26
申请人： Blue29 Corporation
发明人： IVANOV, Igor, C. , ZHANG, Jonathan, Weiguo , KOLICS, Artur
IPC分类号： C23C18/16 , H01L21/68
CPC分类号： H01L21/67109 , C23C18/1619 , C23C18/1676 , C23C18/1678 , C23C18/168 , C23C18/1682
摘要： The method for electroless deposition of a coating material, which may be a metal, semiconductor, or dielectric, that is carried out at a relatively low temperature of the working solution compensated by an increased temperature on the substrate which is controlled by a heater built into the substrate chuck. A decrease in the temperature of the working solution prevents thermal decomposition of the solution and reduces formation of gas bubbles, normally generated at increased temperatures. Accumulation of bubbles on the surface of the substrate is further prevented due to upwardly-facing orientation of the treated surface of the substrate. The substrate holder is equipped with a substrate heater and a substrate cooler that can be used alternately for quick heating or cooling of the substrate surface.
摘要翻译：用于无电沉积涂层材料的方法，该涂层材料可以是金属，半导体或电介质，其在工作溶液的相对较低的温度下进行，所述工作溶液的温度由衬底上的升高的温度补偿，该温度由内置于其中的加热器控制衬底卡盘。工作溶液温度的降低防止了溶液的热分解并且减少了通常在升高的温度下产生的气泡的形成。由于衬底的处理过的表面朝上取向，进一步防止了衬底表面上气泡的积聚。衬底支架配备有衬底加热器和衬底冷却器，它们可以交替使用以快速加热或冷却衬底表面。

7. 发明公开

EP1579029A2 METHOD AND APPARATUS FOR ELECTROLESS DEPOSITION WITH TEMPERATURE-CONTROLLED CHUCK 审中-公开
标题翻译：方法和装置用于以温度控制的座电源分离地段
公开(公告)号：EP1579029A2
公开(公告)日：2005-09-28
申请号：EP03795630.7
申请日：2003-08-26
申请人： Blue29 Corporation
发明人： IVANOV, Igor, C. , ZHANG, Jonathan, Weiguo , KOLICS, Artur
IPC分类号： C23C18/16 , H01L21/68
CPC分类号： H01L21/67109 , C23C18/1619 , C23C18/1676 , C23C18/1678 , C23C18/168 , C23C18/1682
摘要： The method for electroless deposition of a coating material, which may be a metal, semiconductor, or dielectric, that is carried out at a relatively low temperature of the working solution compensated by an increased temperature on the substrate which is controlled by a heater built into the substrate chuck. A decrease in the temperature of the working solution prevents thermal decomposition of the solution and reduces formation of gas bubbles, normally generated at increased temperatures. Accumulation of bubbles on the surface of the substrate is further prevented due to upwardly-facing orientation of the treated surface of the substrate. The substrate holder is equipped with a substrate heater and a substrate cooler that can be used alternately for quick heating or cooling of the substrate surface.

8. 发明公开

EP1126512A2 WAFER PLATING METHOD AND APPARATUS 审中-公开
标题翻译：晶片电镀方法和装置
公开(公告)号：EP1126512A2
公开(公告)日：2001-08-22
申请号：EP99937028.1
申请日：1999-08-11
申请人： EBARA CORPORATION
发明人： HONGO, Akihisa, Ebara Corporation , OGURE, Naoaki, Ebara Corporation , INOUE, Hiroaki, Ebara Corporation , SENDAI, Satoshi, Ebara Corporation , IKEGAMI, Tetsuma, Ebara Corporation , MISHIMA, Koji, Ebara Corporation , OKUYAMA, Shuichi, Ebara Corporation , NAGAI, Mizuki, Ebara Corporation , KIMIZUKA, Ryoichi , MARUYAMA, Megumi, Gardenia Park 603
IPC分类号： H01L21/3205 , H01L21/288 , C23C18/38
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： The present invention provides a method and apparatus for plating a substrate to form wiring by efficiently filling a fine recess (42) formed in a semiconductor substrate (W) with plating metal without a void or contamination. The method for plating a substrate to fill a wiring recess formed in a semiconductor substrate with plating metal (43) comprises performing an electroless plating process of forming an initial layer (41) on a substrate (W), and performing an electrolytic plating process of filling the wiring recess with plating metal, while the initial layer serves as a feeding layer.
摘要翻译：本发明提供一种通过有效地填充形成在半导体衬底（W）中的微细凹槽（42）中的镀覆金属而无空隙或污染地镀覆衬底以形成布线的方法和装置。用镀覆金属（43）镀覆衬底以填充形成在半导体衬底中的布线凹陷的方法包括：执行在衬底（W）上形成初始层（41）的无电镀覆工艺，以及执行用电镀金属填充布线凹槽，而初始层用作馈送层。

9. 发明授权

EP0308011B1 Method of locally providing metal on a surface of a substrate 失效
标题翻译：一种用于在衬底的表面上的选择性金属电镀方法。
公开(公告)号：EP0308011B1
公开(公告)日：1995-01-04
申请号：EP88201937.5
申请日：1988-09-07
申请人： Philips Electronics N.V.
发明人： Jacobs, Johannes Wilhelmus Maria , Rikken, Johannes Mathias Gerardus
IPC分类号： C23C18/16
CPC分类号： C23C18/1612 , C23C18/1608 , C23C18/1651 , C23C18/1676 , C23C18/1682 , H05K3/185 , H05K3/187

10. 发明公开

EP1685280A2 APPARATUS FOR ELECTROLESS DEPOSITION 审中-公开
标题翻译：装置用于无电沉积
公开(公告)号：EP1685280A2
公开(公告)日：2006-08-02
申请号：EP04795598.4
申请日：2004-10-15
申请人： APPLIED MATERIALS, INC.
发明人： LUBOMIRSKY, Dmitry , SHANMUGASUNDRAM, Arulkumar , PANCHAM, Ian, A. , LOPATIN, Sergey
IPC分类号： C25D7/12 , C23C18/16
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.

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