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1. 发明公开

EP2072643A1 ELECTROPLATING METHOD 审中-公开
标题翻译：电镀方法
公开(公告)号：EP2072643A1
公开(公告)日：2009-06-24
申请号：EP07828300.9
申请日：2007-09-21
申请人： S.E.S. Company Limited , Miyata, Seizo
发明人： MIYATA, Seizo , SHIMIZU, Tetsuyac/o S.E.S. CO., LTD. Research , TAJIMA, Hisayoshic/o S.E.S. CO., LTD. , SONE, Masato
IPC分类号： C25D5/00 , C25D7/12
CPC分类号： C25D15/02 , C25D3/38 , C25D5/003 , H01L21/2885 , H01L21/76877
摘要： The surface of a metal base is electroplated by utilizing an induction codeposition phenomenon using at least one of carbon dioxide and inert gas, an electroplating liquid containing a metal powder dispersed therein, and a surfactant in a supercritical state or a subcritical state. The concentration of the metal in the electroplating liquid is in a saturated or supersaturated state. Accordingly, the dissolution speed of the metal base can be suppressed, and, at the same time, a plating layer having a smooth surface can be formed in a short time by utilizing an induction codeposition phenomenon. The electroplating method can be applied even when the metal base is formed of a metallic thin film provided on a surface of an insulating film provided on the substrate, or even when the metal is copper, zinc, iron, nickel, or cobalt. The above constitution can provide an electroplating method which, in electroplating on the surface of a metal base, can prevent the dissolution of the metal base to realize normal electroplating even in the case of a very thin metal base.
摘要翻译：通过使用二氧化碳和惰性气体中的至少一种的感应共沉积现象，其中分散有金属粉末的电镀液体和处于超临界状态或亚临界状态的表面活性剂来电镀金属基底的表面。电镀液中金属的浓度处于饱和或过饱和状态。因此，通过利用感应共沉积现象，可以抑制金属基体的溶解速度，并且同时可以在短时间内形成具有光滑表面的镀层。即使当金属基底由提供在设置在基底上的绝缘膜的表面上的金属薄膜形成时，或者甚至当金属是铜，锌，铁，镍或钴时，也可以应用电镀法。上述结构可以提供一种电镀方法，该方法在金属基体表面进行电镀时，即使在非常薄的金属基体的情况下，也能够防止金属基体的溶解，从而实现正常的电镀。

2. 发明公开

EP2067880A1 ELECTROLESS PLATING METHOD 审中-公开
标题翻译： VERFAHREN ZUR STROMLOSEN METALLABSCHEIDUNG
公开(公告)号：EP2067880A1
公开(公告)日：2009-06-10
申请号：EP07830426.8
申请日：2007-10-24
申请人： S.E.S. Company Limited , Miyata, Seizo
发明人： MIYATA, Seizo , SHIMIZU, Tetsuya , TAJIMA, Hisayoshi , SONE, Masato
IPC分类号： C23C18/31 , H01L21/288
CPC分类号： C23C18/00 , C23C18/1682 , C23C18/1685 , C23C18/31 , H01L21/288 , H01L21/76877
摘要： This invention provides an electroless plating method comprising electrolessly plating the surface of a metal base sample using a supercritical fluid or a subcritical fluid in such a state that a metal powder is dispersed in an electroless plating liquid. According to this method, a homogeneous and thick plating layer is formed in a short time by taking advantage of an induction eutectoid phenomenon. In the electroless plating method, the metal powder may have an average particle diameter of not less than 1 nm and not more than 100 &mgr;m, and the electroless plating method may also be applied to a damascene process or a dual damascene process which is a method for forming a fine metal wiring within a semiconductor element. The above constitution can provide an electroless plating method which can realize the formation of an even film by electroless plating in a short time using a subcritical fluid or a supercritical fluid by taking advantage of an induction eutectoid phenomenon.
摘要翻译：本发明提供了一种化学镀方法，其包括使金属粉末分散在无电镀液中的状态下使用超临界流体或亚临界流体对金属基体样品的表面进行无电镀。根据该方法，通过利用感应共析现象，在短时间内形成均匀且厚的镀层。在化学镀方法中，金属粉末的平均粒径可以不小于1nm且不大于100μm，并且化学镀方法也可以应用于镶嵌工艺或双镶嵌工艺，其是在半导体元件内形成精细金属布线的方法。上述结构可以提供一种化学镀方法，其可以通过利用诱导共析现象利用亚临界流体或超临界流体在短时间内通过化学镀来实现均匀的膜的形成。

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