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1. 发明公开

EP2041334A2 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：介电间隙填充的工艺室
公开(公告)号：EP2041334A2
公开(公告)日：2009-04-01
申请号：EP07797891.4
申请日：2007-05-30
申请人： Applied Materials, Inc.
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/45574 , C23C16/505
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201), a substrate stage in the deposition chamber (201) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising a dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201). An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber (201) from the dielectric precursors supplied to the deposition chamber (201)

2. 发明公开

EP1470571A2 ELECTROLESS DEPOSITION APPARATUS AND METHOD 审中-公开
标题翻译：基板处理装置和心室
公开(公告)号：EP1470571A2
公开(公告)日：2004-10-27
申请号：EP03705844.3
申请日：2003-01-21
申请人： Applied Materials, Inc.
发明人： STEVENS, Joseph J. , LUBOMIRSKY, Dmitry , PANCHAM, Ian , OLGADO, Donald, J. , GRUNES, Howard E. , MOK, Yeuk-Fai Edwin
IPC分类号： H01L21/00 , C23C16/04 , C23C18/16
CPC分类号： H01L21/67126 , C23C18/1607 , C23C18/1619 , C23C18/1628 , C23C18/165 , C23C18/1653 , C23C18/1678 , C25D7/123 , C25D17/001
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, and alloys/combinations thereof, into sub-micron features formed on a substrate. Exemplary metals include palladium, platinum, cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a 'patch' of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material may be deposited over the catalytic layer, by an electroless process, for example. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

3. 发明公开

EP1261985A2 METHOD AND APPARATUS FOR SUPPORTING A SUBSTRATE 审中-公开
标题翻译：方法和设备，用于保持衬底
公开(公告)号：EP1261985A2
公开(公告)日：2002-12-04
申请号：EP01914803.0
申请日：2001-03-12
申请人： Applied Materials, Inc.
发明人： WANG, Danny , LUBOMIRSKY, Dmitry , POLAR, Erwin , STOEHER, Brigitte , WILTSE, Mark , MOK, Yeuk-Fai, Edwin , MA, Frank, C.
IPC分类号： H01L21/00
CPC分类号： H01L21/68707 , H01L21/68721 , H01L21/68785 , Y10S414/141
摘要： A method and apparatus for supporting a substrate in a semiconductor wafer processing system. A support ring having one or more substrate support members mounted thereon and defining a central opening therein for receipt of a substrate support member during processing is disclosed.

4. 发明公开

EP4264663A1 APPARATUS FOR POST EXPOSURE BAKE OF PHOTORESIST 审中-实审
公开(公告)号：EP4264663A1
公开(公告)日：2023-10-25
申请号：EP21907418.4
申请日：2021-11-16
申请人： Applied Materials, Inc.
发明人： BUCHBERGER, JR., Douglas A. , LUBOMIRSKY, Dmitry , DUKOVIC, John O. , NEMANI, Srinivas D.
IPC分类号： H01L21/67 , H01L21/677 , H01L21/673 , G03F7/38

5. 发明公开

EP2044625A2 DIELECTRIC DEPOSITION AND ETCH BACK PROCESSES FOR BOTTOM UP GAPFILL 审中-公开
标题翻译：电介质沉积和回蚀填充GAP底部到顶部
公开(公告)号：EP2044625A2
公开(公告)日：2009-04-08
申请号：EP07812236.3
申请日：2007-06-21
申请人： APPLIED MATERIALS, INC.
发明人： LUBOMIRSKY, Dmitry , NEMANI, Srinivas, D. , YIEH, Ellie
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.

6. 发明公开

EP2022087A2 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质填料工艺室
公开(公告)号：EP2022087A2
公开(公告)日：2009-02-11
申请号：EP07811964.1
申请日：2007-05-30
申请人： APPLIED MATERIALS, INC.
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N. , YIEH, Ellie
IPC分类号： H01L21/76
CPC分类号： C23C16/509 , C23C16/401 , C23C16/452 , C23C16/45514 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , H01J37/32357 , H01J37/3244 , H01J37/32752 , H01J2237/2001
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了由电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，在沉积室中的衬底台以保持衬底，以及耦合到沉积室的远程等离子体产生系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以定位在基板台上方并且侧入口可以径向分布在基板台周围。反应性自由基前体可以通过顶部入口供应到沉积室。还可以包括原位等离子体发生系统以从供应到沉积室的电介质前体在沉积室中产生等离子体。

7. 发明公开

EP1694885A2 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：具有多chemisms金属分离系统
公开(公告)号：EP1694885A2
公开(公告)日：2006-08-30
申请号：EP04760000.2
申请日：2004-04-16
申请人： APPLIED MATERIALS, INC. , Ellwanger, Russell C.
发明人： YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
IPC分类号： C25D1/00
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

8. 发明公开

EP1685280A2 APPARATUS FOR ELECTROLESS DEPOSITION 审中-公开
标题翻译：装置用于无电沉积
公开(公告)号：EP1685280A2
公开(公告)日：2006-08-02
申请号：EP04795598.4
申请日：2004-10-15
申请人： APPLIED MATERIALS, INC.
发明人： LUBOMIRSKY, Dmitry , SHANMUGASUNDRAM, Arulkumar , PANCHAM, Ian, A. , LOPATIN, Sergey
IPC分类号： C25D7/12 , C23C18/16
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.

9. 发明公开

EP4291954A1 APPARATUS FOR POST EXPOSURE BAKE OF PHOTORESIST 审中-实审
公开(公告)号：EP4291954A1
公开(公告)日：2023-12-20
申请号：EP22753161.3
申请日：2022-02-03
申请人： Applied Materials, Inc.
发明人： BUCHBERGER, JR., Douglas A. , LUBOMIRSKY, Dmitry , DUKOVIC, John O. , NEMANI, Srinivas D.
IPC分类号： G03F7/38 , H01L21/67 , H01L21/687 , G03F7/20

10. 发明授权

EP1644557B1 ELECTROCHEMICAL PROCESSING CELL 有权
标题翻译：电化学处理室
公开(公告)号：EP1644557B1
公开(公告)日：2010-11-10
申请号：EP04756864.7
申请日：2004-07-08
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Michael X , LUBOMIRSKY, Dmitry , DORDI, Yezdi N. , SINGH, Saravjeet , TULSHIBAGWALE, Sheshraj L. , KOVARSKY, Nicolay Y.
IPC分类号： C25B9/08 , C25B13/08 , C25B15/02 , C25D3/38 , C25D7/12 , C25D17/00 , C25D21/00 , H01L21/00
CPC分类号： C25D3/38 , C25D7/123 , C25D17/001 , C25D17/002
摘要： Embodiments of the invention provide an electrochemical plating cell (100). The plating cell includes a fluid basin (101), (102) having an anolyte solution compartment and a catholyte solution compartment, an ionic membrane (112) positioned between the anolyte solution compartment and the catholyte solution compartment, and an anode positioned in the anolyte solution compartment, wherein the ionic membrane comprises a poly tetrafluoroethylene based ionomer.

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