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    • 5. 发明公开
    • THROUGH ELECTRODE AND METHOD FOR PRODUCING MULTILAYER SUBSTRATE USING THROUGH ELECTRODE
    • THROUGH用于制造多层基板的连续性电极电极AND METHOD
    • EP3070738A4
    • 2017-06-21
    • EP14861471
    • 2014-11-10
    • TANAKA PRECIOUS METAL IND
    • OGASHIWA TOSHINORIMURAI HIROSHIKANEHIRA YUKIO
    • H01L23/12B81B7/00B81C1/00H01L23/14
    • B81C1/00301B23K20/023B81B7/007B81B2207/095B81C2203/037H01L21/4857H01L21/486H01L23/49822H01L23/49827H01L23/49838H01L23/49866H01L2924/0002H01L2924/00
    • The present invention relates to a through electrode to be mounted on a substrate having a through hole. The through electrode includes: a penetrating part that passes through the through hole; a convex bump part that is formed on at least one end of the penetrating part and is wider than the through electrode; and a metal film that has at least one layer and is formed on a surface of the convex bump part that comes in contact with the substrate. The through electrode part and the convex bump part are formed of a sintered body prepared by sintering one or more kind of metal powder selected from gold, silver, palladium, and platinum having a purity of 99.9 wt% or more and an average particle size of 0.005 µm to 1.0 µm, and the metal film contains gold, silver, palladium, or platinum having a purity of 99.9 wt% or more. The through electrode according to present invention is useful for a circuit board having a multilayer structure, makes it possible to reduce the trace length of an element, such as MEMS, and is also adaptable to hermetic sealing.
    • 本发明涉及一种通过电极被安装在具有通孔的基板。 贯通电极,包括:穿透部分并穿过该通孔; 一个凸包部分没有形成在穿透部分中的至少一个端部,并抵抗比贯通电极; 和金属膜确实具有至少一个层,并且形成所述凸包部分的表面上没有开始与基板接触。 贯通电极部和凸包部分形成通过烧结一种或多种类型的金属粉末的从金,银,钯,和具有99.9重量%以上,并且平均粒径的纯度铂制备的烧结体的 0.005微米至1.0微米,并且所述金属影片包含金,银,钯,或铂具有99.9重量%以上的纯度。 贯通电极gemäß到本发明对于具有多层结构的电路板是有用的,使得有可能降低的元素,颜色的轨迹长度:诸如MEMS,因此是适用于气密密封。
    • 6. 发明公开
    • SILICON-ON-SAPPHIRE DEVICE WITH MINIMAL THERMAL STRAIN PRELOAD AND ENHANCED STABILITY AT HIGH TEMPERATURE
    • 含基本热膨胀负荷和改进的稳定性高温SOS DEVICE
    • EP3093880A1
    • 2016-11-16
    • EP16163058.7
    • 2016-03-30
    • Honeywell International Inc.
    • BROWN, Gregory C.
    • H01L21/762B81B3/00
    • B81B3/0078B81B3/004B81B2201/0264B81B2203/0127B81B2207/094B81C1/00904B81C2203/037G01L9/0055H01L21/76254H01L21/86
    • A silicon-on-sapphire chip with minimal thermal strain preload is provided. The chip includes a sapphire substrate having a first-sapphire surface and an opposing second-sapphire surface; and a silicon layer overlaying the first-sapphire surface. The silicon layer is formed by: creating a plurality of buried cavities in a plane within tens of microns from a first-silicon surface of a silicon wafer; laser fusing the first-silicon surface to the first-sapphire surface at room temperature to attach the silicon wafer to a sapphire wafer; and cleaving the silicon wafer along the plane including the plurality of buried cavities. A silicon-wafer layer is formed from the silicon material between the first-silicon surface and the plane of the plurality of buried cavities. The silicon-wafer layer and the sapphire wafer form a silicon-on-sapphire wafer. The silicon-on-sapphire chip is formed by dicing the silicon-on-sapphire wafer.
    • 本发明提供一种硅 - 蓝宝石上芯片具有最小的热应变的预载荷。 该芯片包括具有第一蓝宝石表面和相对的第二蓝宝石表面的蓝宝石衬底; 和硅层覆盖所述第一蓝宝石表面。 硅树脂层通过以下步骤形成:在几十从硅晶片的第一有机硅表面微米内的平面创建掩埋腔体的多元性; 激光熔接第一硅表面到第一表面的蓝宝石在室温下附着在硅晶片的蓝宝石晶片; 和切割沿平面包括掩埋空腔的多个硅晶片。 甲硅晶片层从第一硅表面和埋入腔的多个平面之间的硅材料形成。 硅晶片层和蓝宝石晶片形成硅 - 蓝宝石晶片。 硅 - 蓝宝石上芯片通过切割硅 - 蓝宝石晶片形成。