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1. 发明授权

EP2929556B1 PROCESS FOR PRODUCING A GALLIUM ARSENIDE SUBSTRATE 有权
标题翻译：生产镓砷化物衬底的方法
公开(公告)号：EP2929556B1
公开(公告)日：2018-04-11
申请号：EP14705102.3
申请日：2014-02-12
申请人： Freiberger Compound Materials GmbH
发明人： FLIEGEL, Wolfram , KLEMENT, Christoph , WILLNAUER, Christa , SCHEFFER-CZYGAN, Max , KLEINWECHTER, André , EICHLER, Stefan , WEINERT, Berndt , MÄDER, Michael
IPC分类号： H01L21/02 , G01N21/21
CPC分类号： H01L21/02054 , G01N21/211 , G01N2021/178 , H01L21/02046 , H01L21/02052 , H01L21/02395 , H01L29/20 , Y10T428/24355
摘要： The present invention relates to a novel process for producing a surface-treated gallium arsenide substrate as well as novel provided gallium arsenide substrates as such as well as the use thereof. The improvement of the process according to the invention is based on a particular final surface treatment with an oxidation treatment of at least one surface of the gallium arsenide substrate in dry condition by means of UV radiation and/or ozone gas, a contacting of the at least one surface of the gallium arsenide substrate with at least one liquid medium and a Marangoni drying of the gallium arsenide substrate. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, specifically by means of ellipsometric lateral substrate mapping for the optical contact-free quantitative characterization.

2. 发明公开

EP2978575A1 VERFAHREN ZUR KANTENVERRUNDUNG VON AUS EINEM FESTKÖRPER-AUSGANGSMATERIAL ERZEUGTEN FESTKÖRPER-TEILSTÜCKEN UND MITTELS DIESES VERFAHRENS HERGESTELLTE FESTKÖRPERPRODUKTE 审中-公开
标题翻译：方法边缘来自固体碱性材料产生的固体切口，并且此方法来舍入产生的固体产品
公开(公告)号：EP2978575A1
公开(公告)日：2016-02-03
申请号：EP14720906.8
申请日：2014-03-28
申请人： Siltectra GmbH , Freiberger Compound Materials GmbH
发明人： DRESCHER, Wolfram , RICHTER, Jan , EICHLER, Stefan , SCHILLING, Franz
IPC分类号： B28D5/00
CPC分类号： B28D5/00
摘要： The invention relates to a method for rounding edges of solid wafers and addresses the problem of providing a method for rounding a peripheral edge of the wafer that is already present, for avoiding the creation of sharp edges after a process step in which the wafer is divided, and for minimising the effort involved in edge rounding in one working process. The problem is solved by generating at least one peripheral recess (7) on an outer surface of the cylindrical solid starting material (1) or on the lateral surfaces of the cuboid solid starting material (1) such that, at all its points, the recess is equally spaced to a base surface or top surface of the solid starting material (1).

3. 发明授权

EP2106465B1 ANORDNUNG UND VERFAHREN ZUR HERSTELLUNG EINES KRISTALLS AUS DER SCHMELZE EINES ROHMATERIALS 有权
标题翻译：装置和方法用于生产晶体从原始材料的熔融
公开(公告)号：EP2106465B1
公开(公告)日：2013-03-06
申请号：EP08759007.1
申请日：2008-06-04
申请人： Freiberger Compound Materials GmbH
发明人： EICHLER, Stefan , BÜNGER, Thomas , BUTTER, Michael , RÜHMANN, Rico , SCHEFFER-CZYGAN, Max
IPC分类号： C30B29/42 , C30B11/00
CPC分类号： H01L29/36 , C30B11/002 , C30B11/003 , C30B11/007 , C30B29/42 , Y10T117/10 , Y10T117/1024 , Y10T117/1092 , Y10T428/12

4. 发明授权

EP2024991B1 VERFAHREN ZUR HERSTELLUNG EINES DOTIERTEN III-N-KRISTALLS 有权
标题翻译：用于生产掺杂III-N晶体
公开(公告)号：EP2024991B1
公开(公告)日：2012-10-17
申请号：EP06776716.0
申请日：2006-08-09
申请人： Freiberger Compound Materials GmbH
发明人： SCHOLZ, Ferdinand , BRÜCKNER, Peter , HABEL, Frank , LEIBIGER, Gunnar
IPC分类号： H01L21/205 , C30B25/14 , C30B29/40 , H01L21/20
CPC分类号： C30B29/403 , C30B25/14 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02664 , H01L31/1844

5. 发明公开

EP2140046A1 DEVICE AND PROCESS FOR PRODUCING POLY-CRYSTALLINE OR MULTI-CRYSTALLINE SILICON; INGO AS WELL AS WAFER OF POLY-CRYSTALLINE OR MULTI-CRYSTALLINE... 有权
标题翻译：用于生产多晶硅或多晶硅
公开(公告)号：EP2140046A1
公开(公告)日：2010-01-06
申请号：EP07857085.0
申请日：2007-12-21
申请人： Freiberger Compound Materials GmbH
发明人： WEINERT, Berndt , JURISCH, Manfred , EICHLER, Stefan
IPC分类号： C30B29/06 , C30B11/00 , H01L31/00
CPC分类号： C30B11/00 , C30B11/002 , C30B11/003 , C30B11/006 , C30B11/06 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A process and a device for producing crystalline silicon, particularly poly- or multi-crystalline silicon are described, wherein a melt of a silicon starting material is formed and the silicon melt is subsequently solidified in a directed orientation. A phase or a material is provided in gaseous, fluid or solid form above the melt in such a manner, that a concentration of a foreign atom selected from oxygen, carbon and nitrogen in the silicon melt and thus in the solidified crystalline silicon is controllable, and/or that a partial pressure of a gaseous component in a gas phase above the silicon melt is adjustable and/or controllable, the gaseous component being selected from oxygen gas, carbon gas and nitrogen gas and gaseous species containing at least one element selected from oxygen, carbon and nitrogen. The formation of impurity compound precipitations or inclusions, in particular of silicon carbide affecting electric properties of solar cells, can be effectively inhibited and prevented according to the present invention.

6. 发明公开

EP2024991A1 VERFAHREN ZUR HERSTELLUNG EINES DOTIERTEN III-N-MASSIVKRISTALLS SOWIE EINES FREISTEHENDEN DOTIERTEN III-N-SUBSTRATES UND DOTIERTER III-N-MASSIVKRISTALL SOWIE FREISTEHENDES DOTIERTES III-N-SUBSTRAT 有权
标题翻译：用于生产掺杂III-N晶体
公开(公告)号：EP2024991A1
公开(公告)日：2009-02-18
申请号：EP06776716.0
申请日：2006-08-09
申请人： Freiberger Compound Materials GmbH
发明人： SCHOLZ, Ferdinand , BRÜCKNER, Peter , HABEL, Frank , LEIBIGER, Gunnar
IPC分类号： H01L21/205 , C30B25/14 , C30B29/40
CPC分类号： C30B29/403 , C30B25/14 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02664 , H01L31/1844
摘要： The invention describes methods for producing a doped III-N solid crystal, where III denotes at least one element of main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N solid crystal is deposited on a substrate or template in a reactor, and wherein at least one dopant is fed into the reactor in a mixture with at least one group III material. In this way, it is possible to obtain III-N solid crystals and III-N single-crystal substrates singulated therefrom, each having a highly homogeneous distribution of the dopant in the growth direction and also in the growth plane perpendicular thereto. It is correspondingly possible to provide a highly homogeneous distribution of charge carriers and/or of electrical resistivity in the growth direction and also in the growth plane perpendicular thereto. Furthermore, it is possible to obtain a very good crystal quality.

7. 发明公开

EP1819473A1 WERKST]CKHALTERUNG UND VERFAHREN ZUM DRAHTS[GEN 审中-公开
标题翻译： WERKST] CKHALTERUNG UND VERFAHREN ZUM DRAHTS [GEN
公开(公告)号：EP1819473A1
公开(公告)日：2007-08-22
申请号：EP04822533.8
申请日：2004-12-10
申请人： Freiberger Compound Materials GmbH
发明人： HAMMER, Ralf , GRUZSYNSKY, Ralf
IPC分类号： B23D57/00 , B28D5/00 , B28D5/04
CPC分类号： B23D57/0046 , B28D5/0082 , B28D5/045
摘要： The invention relates to a method and to a device for separating a workpiece (1, 21) by means of a wire saw, wherein a workpiece (1, 21) is fixed to the wire saw by means of a sawing strip (2, 22). According to the inventive method, the formation of a groove or an indentation on the separating surface, along the separating gap on the crossing of the workpiece (l, 21) on the sawing strip (2, 22) is displaced towards the edge of the separating surface or completely prevented. The workpiece (1, 21) is maintained in the wire saw during the separating process by means of a sawing strip (2, 22) in such a manner that one of the two piercing points (9; 29) is arranged on the surface of the workpiece (1; 21) and also the other (10; 30) of the two piercing points (9, 10; 29, 30) is arranged on the surface of the sawing bar (2; 22), and the piercing point which is arranged on the surface of the workpiece is the inlet side piercing point.
摘要翻译：本发明涉及一种用于通过线锯分离工件（1,21）的方法和装置，其中工件（1,21）通过锯条（2,22）固定到线锯）。根据本发明的方法，沿着锯条（2,22）上的工件（1,21）的交叉处的分离间隙在分离表面上形成凹槽或凹口朝向分离表面或完全防止。在分离过程中借助于锯条（2,22）将工件（1,21）保持在线锯中，使得两个穿孔点（9; 29）中的一个穿孔点（9,29）布置在锯条所述两个穿孔点（9,10; 29,30）中的所述工件（1; 21）以及另一个（10; 30）布置在所述锯杆（2; 22）的表面上，并且所述穿孔点在工件的表面上布置有入口侧穿孔点。

8. 发明公开

EP1801855A1 Processes for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby 有权
标题翻译：选择性地掩蔽III-N层和自支撑III-N层或组件的制造方法
公开(公告)号：EP1801855A1
公开(公告)日：2007-06-27
申请号：EP06024627.9
申请日：2006-11-28
申请人： Freiberger Compound Materials GmbH
发明人： Habel, Frank , Scholz, Ferdinand , Neubert, Barbara , Brückner, Peter , Wunderer, Thomas
IPC分类号： H01L21/20
CPC分类号： H01L21/0265 , C30B25/04 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a surface is provided which comprises more than one facet. Mask material is selectively deposited only on one or multiple, but not on all facets. The deposition of mask material may be particularly carried out during epitaxial growth of a III-N layer under growth conditions, by which (i) growth of at least a further III-N layer selectively on a first type or a first group of facet(s) and (ii) a deposition of mask material selectively on a second type or a second group of facet(s) proceed simultaneously. By the process according to the invention, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.

9. 发明公开

EP1147248A1 VORRICHTUNG ZUR HERSTELLUNG VON EINKRISTALLEN 有权
标题翻译：器具，用于产生单晶
公开(公告)号：EP1147248A1
公开(公告)日：2001-10-24
申请号：EP00922527.7
申请日：2000-03-16
申请人： Freiberger Compound Materials GmbH , FORSCHUNGSZENTRUM JÜLICH GMBH
发明人： SONNENBERG, Klaus , KÜSSEL, Eckhard , BÜNGER, Thomas , FLADE, Tilo , WEINERT, Berndt
IPC分类号： C30B11/00 , C30B29/42
CPC分类号： C30B29/40 , C30B11/003 , C30B29/42 , Y10T117/1068 , Y10T117/1076 , Y10T117/1088
摘要： The invention relates to a device for producing single crystals, for example gallium-arsenide single crystals having a large diameter. The device comprises a cylindrical heating system with a bottom heating element (2), a top heating element (3) and a jacket heating element (5). The heating surfaces of the bottom and top heating elements are significantly greater than the cross-sectional area of the single crystal to be produced. The reaction chamber further comprises an insulator (6) which is configured such that a radial heat flow is suppressed and a strictly axial heat flow over the full height of the reaction chamber is ensured between the top heating element (3) and the bottom heating element (2).

10. 发明授权

EP3775328B1 DEVICE FOR MANUFACTURING AIII-BV-CRYSTALS AND SUBSTRATE WAFERS MANUFACTURED THEREOF FREE OF RESIDUAL STRESS AND DISLOCATIONS 有权
公开(公告)号：EP3775328B1
公开(公告)日：2023-11-08
申请号：EP20730425.4
申请日：2020-06-03
发明人： EICHLER, Stefan , ROSCH, Michael , SUPTEL, Dmitry , KRETZER, Ulrich , WEINERT, Berndt
IPC分类号： C30B11/00 , C30B29/40 , C30B29/42

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