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1. 发明公开

EP3375011A1 METHOD OF MANUFACTURING A HYBRID SUBSTRATE 审中-公开
公开(公告)号：EP3375011A1
公开(公告)日：2018-09-19
申请号：EP16864677.6
申请日：2016-11-10
申请人： Nanyang Technological University , Massachusetts Institute of Technology
发明人： LEE, Kwang Hong , TAN, Chuan Seng , FITZGERALD, Eugene A. , BAO, Shuyu , LEE, Eng Kian, Kenneth , KOHEN, David
IPC分类号： H01L27/02 , H01L27/12 , H01L21/324 , H01L21/304
CPC分类号： H01L21/76251 , H01L21/02002 , H01L21/02054 , H01L21/304 , H01L21/30604 , H01L21/3245 , H01L21/8258 , H01L24/27 , H01L24/29 , H01L24/83 , H01L28/00 , H01L2224/27452 , H01L2224/29186 , H01L2224/83002 , H01L2224/83005 , H01L2224/83011 , H01L2224/83013 , H01L2224/83019 , H01L2224/8389 , H01L2924/10253 , H01L2924/10329
摘要： A method of manufacturing a hybrid substrate is disclosed, which comprises: bonding a first semiconductor substrate to a first combined substrate via at least one layer of dielectric material to form a second combined substrate, the first combined substrate includes a layer of III-V compound semiconductor and a second semiconductor substrate, the layer of III-V compound semiconductor arranged intermediate the layer of dielectric material and second semiconductor substrate; removing the second semiconductor substrate from the second combined substrate to expose at least a portion of the layer of III-V compound semiconductor to obtain a third combined substrate; and annealing the third combined substrate at a temperature about 250° C. to 1000° C. to reduce threading dislocation density of the layer of III-V compound semiconductor to obtain the hybrid substrate.

2. 发明公开

EP2704214A3 Method for manufacturing solar cell 审中-公开
公开(公告)号：EP2704214A3
公开(公告)日：2014-05-07
申请号：EP13003874.8
申请日：2013-08-02
申请人： LG Electronics, Inc.
发明人： Yi, Mann , Kwon, Jeonghyo , Lee, Seongeun , Kwon, Taeyoung
IPC分类号： H01L31/18 , H01L21/02
CPC分类号： H01L31/0236 , H01L21/02054 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/068 , Y02E10/52 , Y02E10/547
摘要： A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.

3. 发明公开

EP1408534A1 A method and a device for producing an adhesive surface of a substrate 有权
标题翻译： Verfahren und Vorrichtung zur Herstellung einer haftendenSubstratoberfläche
公开(公告)号：EP1408534A1
公开(公告)日：2004-04-14
申请号：EP02292517.6
申请日：2002-10-11
申请人： S.O.I. Tec Silicon on Insulator Technologies S.A.
发明人： Maleville, Christophe , Maunand-Tussot, Corinne
IPC分类号： H01L21/00 , H01L21/306 , H01L21/316
CPC分类号： H01L21/67086 , H01L21/02052 , H01L21/02054 , H01L21/02238 , H01L21/02255 , H01L21/02307 , H01L21/185 , H01L21/31662
摘要： The present invention relates to a method and a device for producing an adhesive surface of a substrate (7), especially a silicon wafer, which can be bonded to a surface of another substrate, wherein the surface being treated by wet chemical etching using an etchant (6) removing an oxide from the surface and wherein in the device the etchant is in a bath (5) being adjacent to a room (9) having a gaseous atmosphere (16). It is the object of the present invention to create a method and a device of the above-mentioned type which is easy to carry out and suitable for effectively producing a bondable surface of the substrate. The object is solved with a method and a device of the above-mentioned type, wherein the method comprises subsequently after wet chemical etching exposing of the surface to a gaseous ozone atmosphere (16); and wherein the atmosphere of the device is a gaseous ozone atmosphere (16).
摘要翻译：可以通过以下方式制造可与另一衬底的表面结合的衬底的粘合剂表面，特别是硅晶片：（i）使用蚀刻剂从表面除去氧化物，湿化学蚀刻粘合剂表面; 和（ii）将粘合剂表面暴露于气态臭氧气氛中。还包括用于制造基材的粘合剂表面的装置的独立权利要求，特别是硅晶片（7），其可以结合到另一基底的表面，包括具有蚀刻剂（6）的浴（5），用于从表面去除氧化物。浴室与具有气态臭氧气氛（16）的气体气氛的室（9）相邻。

4. 发明授权

EP0701275B1 Pre-thermal treatment cleaning process 失效
标题翻译：前热处理的清洁方法执行
公开(公告)号：EP0701275B1
公开(公告)日：2003-11-05
申请号：EP95113055.8
申请日：1995-08-18
申请人： MEMC Electronic Materials, Inc.
发明人： Pirooz, Saeed , Shive, Larry W.
IPC分类号： H01L21/306
CPC分类号： H01L21/02054 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/02307 , H01L21/02337 , H01L21/31675 , Y10S438/974

5. 发明公开

EP0841689A2 Method of processing semiconductor substrate 失效
标题翻译： Verfahren zum Verarbeiten eines Halbleitersubstrats
公开(公告)号：EP0841689A2
公开(公告)日：1998-05-13
申请号：EP97203445.8
申请日：1997-11-06
申请人： ASM JAPAN K.K.
发明人： Shimizu, Akira , Namba, Kunitoshi
IPC分类号： H01L21/00
CPC分类号： H01L21/02054 , H01L21/3065 , H01L21/67034 , Y10S438/905
摘要： Contamination on semiconductor wafers is eliminated to perform a drying step quickly, thereby improving productivity.
There is provided a method of performing vapor phase etching on semiconductor wafers. The method comprises the steps of etching the semiconductor wafers by introducing a reactive gas into the reaction chamber, restoring the pressure in the reaction chamber to the atmospheric pressure by introducing an inert gas into the reaction chamber, cleaning the semiconductor wafers, drying the semiconductor wafers, and introducing an alcoholic gas into the reaction chamber. The inner wall of the reaction chamber is constantly maintained at a predetermined temperature in the range from 50 °C to 80 °C. Alcohol having a boiling point 10 °C or more lower than the predetermined temperature is chosen.
The use of an inert gas prevents the occurrence of a water mark during a spin drying process. Further, the alcoholic gas selectively acts only on water droplets on the inner wall surface of the chamber to prevent contamination due to organic substances and to allow the time required for drying to be shortened by a factor of about ten.
摘要翻译：消除半导体晶圆上的污染，迅速进行干燥，提高生产率。提供了对半导体晶片进行气相蚀刻的方法。该方法包括以下步骤：通过将反应气体引入反应室来蚀刻半导体晶片，通过向反应室中引入惰性气体，将反应室中的压力恢复到大气压，清洗半导体晶片，干燥半导体晶片，并将醇气体引入反应室。将反应室的内壁恒定地保持在50℃〜80℃的规定温度。选择沸点比预定温度低10℃以上的醇。使用惰性气体可防止在旋转干燥过程中出现水痕。此外，醇气体选择性地仅对室内壁表面上的水滴起作用，以防止由于有机物质引起的污染，并使干燥所需的时间缩短约十倍。

6. 发明公开

EP0488148A3 Method of manufacturing a MOS-type field-effect transistor 失效
标题翻译：制造MOS型场效应晶体管的方法
公开(公告)号：EP0488148A3
公开(公告)日：1992-08-12
申请号：EP91120153.1
申请日：1991-11-26
申请人： SEIKO EPSON CORPORATION
发明人： Sato, Masato
IPC分类号： H01L21/28 , H01L21/306
CPC分类号： H01L21/02054 , H01L21/02043 , H01L21/02046 , H01L21/28167 , H01L21/28211 , Y10S148/017 , Y10S148/053 , Y10S438/906 , Y10S438/909 , Y10S438/974
摘要： A method of manufacturing a semiconductor device including a MOS-type field effect transistor. The method comprises: cleansing a surface of a substrate (10); forming, next to the cleansing step, a gate oxide film on the cleansed surface of the substrate; dry-etching, during the cleansing step, the surface of the substrate in an ambient in which hydrogen fluoride and a substance containing at least a chloride atom coexist in gaseous state; and removing, during the cleansing step, an oxide film (14) and metal impurities (16) on the surface of the substrate. Preferably, the dry-etching is performed under heat and decompression.

7. 发明授权

EP2284873B1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：方法制造半导体器件和方法清洗半导体衬底
公开(公告)号：EP2284873B1
公开(公告)日：2016-01-27
申请号：EP09733087.2
申请日：2009-04-10
申请人： National University Corporation, Tohoku University , Stella Chemifa Corporation
发明人： OHMI, Tadahiro , TERAMOTO, Akinobu , HASEBE, Rui , MIYASHITA, Masayuki
IPC分类号： H01L21/306
CPC分类号： H01L21/02052 , H01L21/02054 , H01L21/0206 , Y10S438/906

8. 发明授权

EP1421609B1 PROCESS AND APPARATUS FOR TREATING A WORKPIECE SUCH AS A SEMICONDUCTOR WAFER 有权
标题翻译：工艺和器件用于对工件，的处理，如半导体晶片
公开(公告)号：EP1421609B1
公开(公告)日：2008-03-26
申请号：EP02750283.0
申请日：2002-07-23
申请人： SEMITOOL, INC.
发明人： KENNY, Michael , AEGETER, Brian , BERGMAN, Eric , SCRANTON, Dana
IPC分类号： H01L21/302 , B08B6/00
CPC分类号： H01L21/02052 , B08B3/00 , B08B3/02 , B08B3/044 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2203/007 , B08B2203/0288 , B08B2230/01 , H01L21/02054 , H01L21/3065 , H01L21/67034 , H01L21/6704 , H01L21/67051 , H01L23/49582 , H01L2924/0002 , H05K3/3426 , Y02P70/613 , H01L2924/00
摘要： In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. A jet of high velocity heated liquid is directed against the workpiece, to physically dislodge or remove a contaminant from the workpiece. The jet penetrates through the boundary layer at the point of impact. The boundary layer otherwise remains largely undisturbed. Preferably, the liquid includes water, and may also include a chemical. Steam may also be jetted onto the workpiece, with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. The workpiece and the jet of liquid are moved relative to each other, so that substantially all areas of the workpiece surface facing the jet are exposed at least momentarily to the jet. Sonic or electromagnetic energy may also be introduced to the workpiece.

9. 发明公开

EP1421609A1 PROCESS AND APPARATUS FOR TREATING A WORKPIECE SUCH AS A SEMICONDUCTOR WAFER 有权
标题翻译：工艺和器件用于对工件，的处理，如半导体晶片
公开(公告)号：EP1421609A1
公开(公告)日：2004-05-26
申请号：EP02750283.0
申请日：2002-07-23
申请人： SEMITOOL, INC.
发明人： KENNY, Michael , AEGETER, Brian , BERGMAN, Eric , SCRANTON, Dana
IPC分类号： H01L21/302 , B08B6/00
CPC分类号： H01L21/02052 , B08B3/00 , B08B3/02 , B08B3/044 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2203/007 , B08B2203/0288 , B08B2230/01 , H01L21/02054 , H01L21/3065 , H01L21/67034 , H01L21/6704 , H01L21/67051 , H01L23/49582 , H01L2924/0002 , H05K3/3426 , Y02P70/613 , H01L2924/00
摘要： In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. A jet of high velocity heated liquid is directed against the workpiece, to physically dislodge or remove a contaminant from the workpiece. The jet penetrates through the boundary layer at the point of impact. The boundary layer otherwise remains largely undisturbed. Preferably, the liquid includes water, and may also include a chemical. Steam may also be jetted onto the workpiece, with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. The workpiece and the jet of liquid are moved relative to each other, so that substantially all areas of the workpiece surface facing the jet are exposed at least momentarily to the jet. Sonic or electromagnetic energy may also be introduced to the workpiece.

10. 发明公开

EP1299903A1 INTERFACE CONTROL FOR FILM DEPOSITION BY GAS-CLUSTER ION-BEAM PROCESSING 审中-公开
标题翻译：对于电影矿床边界控制BY气体团簇离子束加工
公开(公告)号：EP1299903A1
公开(公告)日：2003-04-09
申请号：EP01910460.3
申请日：2001-02-08
申请人： Epion Corporation
发明人： FENNER, David B.,Epion Corporation
IPC分类号： H01L21/302 , H01L21/461 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28194 , C23C14/0031 , C23C14/022 , H01J2237/0812 , H01L21/02054 , H01L21/0206 , H01L21/0217 , H01L21/02172 , H01L21/02247 , H01L21/02263 , H01L21/02299 , H01L21/02307 , H01L21/28202 , H01L21/28211 , H01L21/31111 , H01L21/31604 , H01L21/31662 , H01L21/31683 , H01L21/3185 , H01L28/40 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Methods are disclosed for gas-cluster ion-beam deposition of thin films on silicon wafers rendered free of native oxides by termination of the surface bonds and subsequent reactive deposition. Hydrogen termination of the surface of silicon renders it inert to reoxidation from oxygen-containing enviornmental gasses, even those found as residue in vacuum systems, such as those used to deposit films. Nitrogen termination improves the interface with overlying metal-oxide thin films. The film is formed in intimate contact with the silicon crystal surface forming a nearly ideal interface.

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