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1. 发明公开

EP2671965A2 Method of forming thin film polysilicon layer and method of forming thin film transistor 审中-公开
标题翻译：一种生产用于形成薄膜晶体管的薄膜多晶硅层和方法的工序
公开(公告)号：EP2671965A2
公开(公告)日：2013-12-11
申请号：EP13171120.2
申请日：2013-06-07
申请人： Wintek Corporation
发明人： Huang, Hieng-Hsiung , Wang, Wen-Chun , Chang, Heng-Yi , Liu, Chin-Chang
IPC分类号： C23C14/18 , C23C14/02 , C23C16/24 , C23C16/48 , H01L29/66 , H01L29/49 , C23C16/02 , H01L29/786 , C30B29/06 , H01L21/20
CPC分类号： H01L29/78672 , C03C2218/152 , C03C2218/153 , C03C2218/154 , C23C14/024 , C23C14/025 , C23C14/185 , C23C16/0209 , C23C16/0272 , C23C16/0281 , C23C16/24 , C30B29/06 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02658 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： A method of forming a thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) includes the following steps. A substrate (110, 310, 510) is provided. A heating treatment is then performed. A thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) is then directly formed on a first surface (110A, 310A, 510A) of the substrate (110, 310, 510) by a silicon thin film deposition process. A method of forming a thin film transistor (T1, T2, T3, T4, T5) includes the following steps. A first patterning process is performed on the thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) to form a semiconductor pattern (20P, 22P). Subsequently, a gate insulation layer (30, 32, 33, 34), a gate electrode (40G, 44G, 53G), a source electrode (40S, 43S, 60S, 64S) and a drain electrode (40D, 43D, 60D, 64D) are formed.
摘要翻译：形成薄膜多晶硅层（20，22，120，220，320，420，520，620）的方法，包括以下步骤。的衬底（110，310，510）被提供。然后进行加热处理。一种薄膜多晶硅层（20，22，120，220，320，420，520，620），然后直接通过形成在第一表面（110A，310A，510A）的基板的（110，310，510）硅薄膜沉积工艺。形成薄膜晶体管（T1，T2，T3，T4，T5）的方法，包括以下步骤。第一图案化工艺进行薄膜多晶硅层上（20，22，120，220，320，420，520，620），以形成半导体图案（20P，22P）。随后，栅绝缘层（30，32，33，34），栅电极（40G，44G，53G），源电极（40S，43S，60S，64S）和漏极电极（40D，43D，60D， 64D）形成。

2. 发明公开

EP2671966A3 Method of forming thin film poly silicon layer 审中-公开
标题翻译：一种用于形成薄膜多晶硅层的方法
公开(公告)号：EP2671966A3
公开(公告)日：2014-03-12
申请号：EP13171134.3
申请日：2013-06-07
申请人： Wintek Corporation
发明人： Huang, Hieng-Hsiung , Wang, Wen-Chun , Chang, Heng-Yi , Liu, Chin-Chang
IPC分类号： C23C14/18 , C23C14/02 , C23C16/24 , C23C16/48 , H01L29/66 , H01L29/49 , C23C16/02 , H01L29/786 , C30B29/06 , H01L21/20 , H01L21/02
CPC分类号： H01L21/02107 , C23C14/024 , C23C14/025 , C23C14/185 , C23C16/0209 , C23C16/0272 , C23C16/0281 , C23C16/24 , C30B29/06 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02658 , H01L29/6675 , H01L29/78672
摘要： A method of forming a thin film poly silicon layer (120, 220, 320, 420, 520, 620) includes following steps. Firstly, a substrate (110, 310, 510) is provided. The substrate (110, 310, 510) has a first surface (110A, 310A, 510A). A heating treatment is then performed. A thin film poly silicon layer (120, 220, 320, 420, 520, 620) is then directly formed on the first surface (110A, 310A, 510A) of the substrate (110, 310, 510) by a silicon thin film deposition process.

3. 发明公开

EP2671965A3 Method of forming thin film polysilicon layer and method of forming thin film transistor 审中-公开
标题翻译：一种生产用于形成薄膜晶体管的薄膜多晶硅层和方法的工序
公开(公告)号：EP2671965A3
公开(公告)日：2014-03-12
申请号：EP13171120.2
申请日：2013-06-07
申请人： Wintek Corporation
发明人： Huang, Hieng-Hsiung , Wang, Wen-Chun , Chang, Heng-Yi , Liu, Chin-Chang
IPC分类号： C23C14/18 , C23C14/02 , C23C16/24 , C23C16/48 , H01L29/66 , H01L29/49 , C23C16/02 , H01L29/786 , C30B29/06 , H01L21/20 , H01L21/02
CPC分类号： H01L29/78672 , C03C2218/152 , C03C2218/153 , C03C2218/154 , C23C14/024 , C23C14/025 , C23C14/185 , C23C16/0209 , C23C16/0272 , C23C16/0281 , C23C16/24 , C30B29/06 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02658 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： A method of forming a thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) includes the following steps. A substrate (110, 310, 510) is provided. A heating treatment is then performed. A thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) is then directly formed on a first surface (110A, 310A, 510A) of the substrate (110, 310, 510) by a silicon thin film deposition process. A method of forming a thin film transistor (T1, T2, T3, T4, T5) includes the following steps. A first patterning process is performed on the thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) to form a semiconductor pattern (20P, 22P). Subsequently, a gate insulation layer (30, 32, 33, 34), a gate electrode (40G, 44G, 53G), a source electrode (40S, 43S, 60S, 64S) and a drain electrode (40D, 43D, 60D, 64D) are formed.

4. 发明公开

EP2698691A2 Touch panel and touch display panel 无效转让
标题翻译： BerührungsbildschirmundBerührungsanzeigetafel
公开(公告)号：EP2698691A2
公开(公告)日：2014-02-19
申请号：EP13180385.0
申请日：2013-08-14
申请人： Wintek Corporation
发明人： Huang, Hieng-Hsiung , Wang, Wen-Chun , Liu, Chin-Chang
IPC分类号： G06F3/044
CPC分类号： G06F3/044 , G06F2203/04103
摘要： A touch panel (1) includes a first substrate (11), a second substrate (12), an adhesive layer (13), a first patterned sensing electrode layer (21) and a second patterned sensing electrode layer (22). The first substrate (11) has a first surface (11A) and a second surface (11B), the second substrate (12) has a third surface (12C) and a fourth surface (12D), and the second surface (11B) of the first substrate (11) faces the third surface (12C) of the second substrate (12). The adhesive layer (13) is disposed between the second surface (11B) of the first substrate (11) and the third surface (12C) of the second substrate (12) for assembling the first substrate (11) and the second substrate (12). The first patterned sensing electrode layer (21) is disposed on the first substrate (11), and the second patterned sensing electrode layer (22) is disposed on the second substrate (12).
摘要翻译：触摸面板（1）包括第一基板（11），第二基板（12），粘合层（13），第一图案化感测电极层（21）和第二图案化感测电极层（22）。第一基板（11）具有第一表面（11A）和第二表面（11B），第二基板（12）具有第三表面（12C）和第四表面（12D），第二表面（11B）第一基板（11）面向第二基板（12）的第三表面（12C）。粘合剂层（13）设置在第一基板（11）的第二表面（11B）和用于组装第一基板（11）和第二基板（12）的第二基板（12）的第三表面（12C）之间）。第一图案化感测电极层（21）设置在第一基板（11）上，第二图案化感测电极层（22）设置在第二基板（12）上。

5. 发明公开

EP2750008A3 Touch panel 审中-公开
标题翻译：触摸屏
公开(公告)号：EP2750008A3
公开(公告)日：2016-07-06
申请号：EP13199627.4
申请日：2013-12-27
申请人： Wintek Corporation
发明人： Chu, Kuan-Yu , Huang, Chun-Cheng , Huang, Chen-Fu , Wang, Yu-Ching , Hwang, Chin-Pei , Chen, Ming-Wu , Liu, Chiu-Mei , Lin, Yan-Jun , Liu, Chia-Hung , Wang, Wen-Chun , Chang, Yu-Hung , Tsai, Lo-Hsien
IPC分类号： G06F3/044
CPC分类号： G06F3/041 , G06F3/0416 , G06F3/044 , G06F2203/04107 , G06F2203/04111
摘要： A touch panel (400, 700, 800), having a peripheral region (292), includes a first substrate (211), a touch-sensing structure (420), first outer traces (431), a first ground wire (439A) and an outer device (480). The first outer trace (431) is electronically connected to the touch-sensing structure (420). The first outer traces (431) extend to a connection region (493) in the peripheral region (292). The first ground wire (439A) extends to the connection region (493), and the first ground wire (439A) has at least one interrupted section (435) in the connection region (493). The outer device (480) is electronically connected to the first ground wire (439A) and the first outer traces (431) in the connection region (493). The outer device (480) electronically connects two ends of the interrupted section (435) of the first ground wire (439A) in the connection region (493), and the two ends of the interrupted section (435) of the first ground wire (439A) are electronically connected via the outer device (480).

6. 发明公开

EP2750008A2 Touch panel 审中-公开
标题翻译：触控面板
公开(公告)号：EP2750008A2
公开(公告)日：2014-07-02
申请号：EP13199627.4
申请日：2013-12-27
申请人： Wintek Corporation
发明人： Chu, Kuan-Yu , Huang, Chun-Cheng , Huang, Chen-Fu , Wang, Yu-Ching , Hwang, Chin-Pei , Chen, Ming-Wu , Liu, Chiu-Mei , Lin, Yan-Jun , Liu, Chia-Hung , Wang, Wen-Chun , Chang, Yu-Hung , Tsai, Lo-Hsien
IPC分类号： G06F3/044
CPC分类号： G06F3/041 , G06F3/0416 , G06F3/044 , G06F2203/04107 , G06F2203/04111
摘要： A touch panel (400, 700, 800), having a peripheral region (292), includes a first substrate (211), a touch-sensing structure (420), first outer traces (431), a first ground wire (439A) and an outer device (480). The first outer trace (431) is electronically connected to the touch-sensing structure (420). The first outer traces (431) extend to a connection region (493) in the peripheral region (292). The first ground wire (439A) extends to the connection region (493), and the first ground wire (439A) has at least one interrupted section (435) in the connection region (493). The outer device (480) is electronically connected to the first ground wire (439A) and the first outer traces (431) in the connection region (493). The outer device (480) electronically connects two ends of the interrupted section (435) of the first ground wire (439A) in the connection region (493), and the two ends of the interrupted section (435) of the first ground wire (439A) are electronically connected via the outer device (480).
摘要翻译：具有外围区域（292）的触摸面板（400,700,800）包括第一基板（211），触摸结构（420），第一外部迹线（431），第一接地线（439A）和外部装置（480）。第一外迹线（431）电连接到触摸结构（420）。第一外部迹线（431）延伸到外围区域（292）中的连接区域（493）。第一接地线439A延伸到连接区域493，并且第一接地线439A在连接区域493中具有至少一个中断部分435。外部装置（480）在连接区域（493）中电连接到第一接地线（439A）和第一外部迹线（431）。外部装置（480）在连接区域（493）中电连接第一接地导线（439A）的中断部分（435）的两端，并且第一接地导线（439）的中断部分（435） 439A）通过外部装置（480）电连接。

7. 发明公开

EP2671966A2 Method of forming thin film poly silicon layer 审中-公开
标题翻译： Verfahren zur Bildung einerdünnschichtigenPolysiliziumschicht
公开(公告)号：EP2671966A2
公开(公告)日：2013-12-11
申请号：EP13171134.3
申请日：2013-06-07
申请人： Wintek Corporation
发明人： Huang, Hieng-Hsiung , Wang, Wen-Chun , Chang, Heng-Yi , Liu, Chin-Chang
IPC分类号： C23C14/18 , C23C14/02 , C23C16/24 , C23C16/48 , H01L29/66 , H01L29/49 , C23C16/02 , H01L29/786 , C30B29/06 , H01L21/20
CPC分类号： H01L21/02107 , C23C14/024 , C23C14/025 , C23C14/185 , C23C16/0209 , C23C16/0272 , C23C16/0281 , C23C16/24 , C30B29/06 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02658 , H01L29/6675 , H01L29/78672
摘要： A method of forming a thin film poly silicon layer (120, 220, 320, 420, 520, 620) includes following steps. Firstly, a substrate (110, 310, 510) is provided. The substrate (110, 310, 510) has a first surface (110A, 310A, 510A). A heating treatment is then performed. A thin film poly silicon layer (120, 220, 320, 420, 520, 620) is then directly formed on the first surface (110A, 310A, 510A) of the substrate (110, 310, 510) by a silicon thin film deposition process.
摘要翻译：形成薄膜多晶硅层（120,220,320,420,520,620）的方法包括以下步骤。首先，提供衬底（110,310,510）。衬底（110,310,510）具有第一表面（110A，310A，510A）。然后进行加热处理。然后通过硅薄膜沉积物直接在衬底（110,310,510）的第一表面（110A，310A，510A）上形成薄膜多晶硅层（120,220,320,420,520,620）处理。

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