专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP2451032B1 Laser diode assembly and semiconductor optical amplifier assembly 失效
公开(公告)号：EP2451032B1
公开(公告)日：2019-05-08
申请号：EP11008076.9
申请日：2011-10-05
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Kuramoto, Masaru
IPC分类号： H01S5/06 , H01S5/065 , H01S5/14 , H01S5/50 , H01S5/0625 , H01S5/10

2. 发明公开

EP2451032A3 Laser diode assembly and semiconductor optical amplifier assembly 失效
标题翻译：激光二极管组件和半导体激光放大器模块
公开(公告)号：EP2451032A3
公开(公告)日：2014-03-19
申请号：EP11008076.9
申请日：2011-10-05
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Kuramoto, Masaru
IPC分类号： H01S5/06 , H01S5/065 , H01S5/14 , H01S5/50 , H01S5/0625 , H01S5/10
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0064 , H01S5/0071 , H01S5/0078 , H01S5/028 , H01S5/0425 , H01S5/06251 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/141 , H01S5/16 , H01S5/2009 , H01S5/22 , H01S5/3063 , H01S5/309 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S5/50 , H01S2301/176
摘要： A laser diode assembly includes a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation, an external resonator, and a wavelength selective element (82,92,94-97). A long wavelength component of a pulsed laser beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective element, and output to the outside.

3. 发明公开

EP2463972A2 Laser diode device 审中-公开
标题翻译： Laserdiodenvorrichtung
公开(公告)号：EP2463972A2
公开(公告)日：2012-06-13
申请号：EP11008998.4
申请日：2011-11-11
申请人： Sony Corporation , Tohoku University
发明人： Oki, Tomoyuki , Watanabe, Hideki , Koda, Rintaro , Kuramoto, Masaru , Yokoyama, Hiroyuki
IPC分类号： H01S5/10 , H01S5/065 , H01S5/0625 , H01S5/343 , H01S5/022
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/06253 , H01S5/0658 , H01S5/1014 , H01S5/1064 , H01S5/141 , H01S5/22
摘要： A laser diode device includes a laminated structure in which a first compound semiconductor layer (30), a third compound semiconductor layer (40) that has a light emitting region (41) and a saturable absorption region (42), and a second compound semiconductor layer (50) are sequentially layered, a second electrode (62), and a first electrode (61). The laminated structure has ridge stripe structure (56). The second electrode is separated into a first section (62A) to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section (62B) to add electric field to the saturable absorption region by an isolation trench (62C). When minimum width of the ridge stripe structure is W MIN , and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W 2 , 1 2 /W MIN is satisfied.
摘要翻译：激光二极管装置包括层叠结构，其中具有发光区域（41）和可饱和吸收区域（42）的第一化合物半导体层（30），第三化合物半导体层（40）和第二化合物半导体层（50）顺序层叠，第二电极（62）和第一电极（61）。层叠结构具有脊状结构（56）。第二电极被分成第一部分（62A），以通过通过发光区域向第一电极施加直流电流以及第二部分（62B）来获得正向偏置状态，以通过隔离将电场加到可饱和吸收区域沟槽（62C）。当脊条纹结构的最小宽度为W MIN时，第二电极的第二部分与隔离沟槽之间的界面中的第二电极的第二部分的脊状条纹结构的宽度为W 2，1

4. 发明公开

EP2485345A2 Laser diode assembly 有权
标题翻译： Laserdiodenanordnung
公开(公告)号：EP2485345A2
公开(公告)日：2012-08-08
申请号：EP11008275.7
申请日：2011-10-13
申请人： Sony Corporation , Tohoku University
发明人： Kono, Shunsuke , Yokoyama, Hiroyuki , Kuramoto, Masaru , Oki, Tomoyuki
IPC分类号： H01S5/14 , H01S5/065
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0287 , H01S5/141 , H01S5/3063 , H01S5/3202 , H01S5/3216 , H01S5/34333
摘要： A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.
摘要翻译：激光二极管组件包括：锁模激光二极管器件; 配置外部谐振器的衍射光栅将一次或更多次的衍射光返回到锁模激光二极管器件，并将0级衍射光输出到外部; 以及设置在锁模激光二极管器件和衍射光栅之间的成像部分，并且对衍射光栅上的锁模激光二极管器件的光输出端面的图像进行成像。

5. 发明公开

EP2367245A2 GaN laser diode and method of driving a laser diode 审中-公开
标题翻译： GaN激光二极管和Verfahren zum Antrieb einer激光二极管
公开(公告)号：EP2367245A2
公开(公告)日：2011-09-21
申请号：EP11001865.2
申请日：2009-07-28
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Oki, Tomoyuki , Masao, Ikeda , Miyajima, Takao , Watanabe, Hideki
IPC分类号： H01S5/042 , H01S5/20 , H01S5/22 , H01S5/323 , H01S5/062
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided including a GaN-based laminate structure body comprising: a first compound semiconductor layer (30), a second compound semiconductor layer (50) comprising a p-type compound semiconductor layer (53, 54, 55), wherein a part of the p-type semiconductor layer (54, 55) is removed to form a ridge section (56), an active layer (40) having a quantum well structure and being arranged between the first compound semiconductor layer (30) and the second compound semiconductor layer (50), a first electrode (61) electrically connected to the first compound semiconductor layer (30), and a second electrode (62) electrically connected to the second compound semiconductor layer (50), wherein the distance from the active layer (40) to the p-type compound semiconductor layer (53, 54, 55) is 1.2x10- 7 m or less, the distance from the active layer (40) to the second electrode (62) is 1 µm or less, and the width of the ridge section (56) is 2 µm or less. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译：提供了具有简单结构和结构的超短脉冲/超大功率激光二极管，其包括：GaN基层压结构体，包括：第一化合物半导体层（30），包含p型的第二化合物半导体层（50）化合物半导体层（53,54,55），其中去除p型半导体层（54,55）的一部分以形成脊部（56），具有量子阱结构的有源层（40）和布置在第一化合物半导体层（30）和第二化合物半导体层（50）之间，电连接到第一化合物半导体层（30）的第一电极（61）和与第二化合物半导体层（50）电连接的第二电极化合物半导体层（50），其中从有源层（40）到p型化合物半导体层（53,54,55）的距离为1.2×10 -7 m以下，与有源层（40）的距离到第二电极（62）的厚度为1μm以下脊部（56）的宽度为2μm以下。在驱动激光二极管的方法中，激光二极管由比阈值电流值高10或更多倍的脉冲电流来驱动。脉冲电流的宽度优选为10纳秒以下，脉冲电流的值为0.4安培以上。

6. 发明公开

EP2226910A2 Method of driving a laser diode device and laser diode equipment 审中-公开
标题翻译： Verfahren zur Steuerung einer激光二极管和激光二极管
公开(公告)号：EP2226910A2
公开(公告)日：2010-09-08
申请号：EP10001675.7
申请日：2010-02-18
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Oki, Tomoyuki , Ikeda, Masao
IPC分类号： H01S5/40 , H01S3/10 , H01S5/14 , H01S5/22 , H01S5/323
CPC分类号： H01S5/4006 , B82Y20/00 , H01S5/0428 , H01S5/06216 , H01S5/0658 , H01S5/14 , H01S5/2009 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A method of driving an ultrashort pulse and ultrahigh power laser diode device having a simple composition and a simple structure is provided. In the method of driving a laser diode device, light is injected from a light injection means (10) into a laser diode device (20) driven by a pulse current having a value 10 or more times as large as a value of a threshold current.
摘要翻译：提供了一种驱动具有简单组成和简单结构的超短脉冲和超高功率激光二极管器件的方法。在驱动激光二极管器件的方法中，光从光注入装置（10）注入激光二极管装置（20），该激光二极管装置（20）由脉冲电流驱动，其值为阈值电流值的10倍或更多倍。

7. 发明公开

EP2367245A3 GaN laser diode and method of driving a laser diode 审中-公开
标题翻译：的GaN激光二极管和驱动激光二极管的方法
公开(公告)号：EP2367245A3
公开(公告)日：2012-10-31
申请号：EP11001865.2
申请日：2009-07-28
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Oki, Tomoyuki , Masao, Ikeda , Miyajima, Takao , Watanabe, Hideki
IPC分类号： H01S5/042 , H01S5/20 , H01S5/22 , H01S5/323 , H01S5/062
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided including a GaN-based laminate structure body comprising: a first compound semiconductor layer (30), a second compound semiconductor layer (50) comprising a p-type compound semiconductor layer (53, 54, 55), wherein a part of the p-type semiconductor layer (54, 55) is removed to form a ridge section (56), an active layer (40) having a quantum well structure and being arranged between the first compound semiconductor layer (30) and the second compound semiconductor layer (50), a first electrode (61) electrically connected to the first compound semiconductor layer (30), and a second electrode (62) electrically connected to the second compound semiconductor layer (50), wherein the distance from the active layer (40) to the p-type compound semiconductor layer (53, 54, 55) is 1.2x10- 7 m or less, the distance from the active layer (40) to the second electrode (62) is 1 µm or less, and the width of the ridge section (56) is 2 µm or less. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

8. 发明公开

EP2403080A2 Semiconductor optical amplifier 审中-公开
标题翻译： OptischerHalbleiterverstärker
公开(公告)号：EP2403080A2
公开(公告)日：2012-01-04
申请号：EP11004801.4
申请日：2011-06-10
申请人： Sony Corporation , TOHOKU UNIVERSITY
发明人： Kuramoto, Masaru , Ikeda, Masao , Koda, Rintaro , Oki, Tomoyuki , Watanabe, Hideki , Miyajima, Takao , Yokoyama, Hiroyuki
IPC分类号： H01S5/50 , H01S5/16 , H01S5/323 , H01S5/10
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier (200) includes: a laminated structure sequentially including a first compound semiconductor layer (230) composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer (240) having a light amplification region (241) composed of GaN compound semiconductor, and a second compound semiconductor layer (250) composed of GaN compound semiconductor and having a second conductivity type; a second electrode (262) formed on the second compound semiconductor layer; and a first electrode (261) electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure (258), wherein the width of the ridge stripe structure in a light output end face W out is larger than the width W in in a light incident end face. A carrier non-injection region (205) is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器（200）包括：顺序地包括由GaN化合物半导体构成的第一导电类型的第一化合物半导体层（230）和具有光放大区域（241）的第三化合物半导体层（240）由GaN化合物半导体构成，第二化合物半导体层（250）由GaN化合物半导体构成，具有第二导电型; 形成在第二化合物半导体层上的第二电极（262）和与第一化合物半导体层电连接的第一电极（261）。层叠结构具有棱条结构（258），其中光输出端面W out中的脊条结构的宽度大于光入射端面中的宽度W in。载流子非注入区域（205）沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

9. 发明公开

EP2403080A3 Semiconductor optical amplifier 审中-公开
标题翻译：半导体光放大器
公开(公告)号：EP2403080A3
公开(公告)日：2017-11-29
申请号：EP11004801.4
申请日：2011-06-10
申请人： Sony Corporation , TOHOKU UNIVERSITY
发明人： Kuramoto, Masaru , Ikeda, Masao , Koda, Rintaro , Oki, Tomoyuki , Watanabe, Hideki , Miyajima, Takao , Yokoyama, Hiroyuki
IPC分类号： H01S5/50 , H01S5/16 , H01S5/323 , H01S5/10 , H01S5/343 , H01S5/065 , H01S5/06 , H01S5/042 , H01S5/22
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier (200) includes: a laminated structure sequentially including a first compound semiconductor layer (230) composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer (240) having a light amplification region (241) composed of GaN compound semiconductor, and a second compound semiconductor layer (250) composed of GaN compound semiconductor and having a second conductivity type; a second electrode (262) formed on the second compound semiconductor layer; and a first electrode (261) electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure (258), wherein the width of the ridge stripe structure in a light output end face W out is larger than the width W in in a light incident end face. A carrier non-injection region (205) is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：一种半导体光放大器（200），包括：依次包括由GaN化合物半导体构成并具有第一导电类型的第一化合物半导体层（230），具有光放大区域（241）的第三化合物半导体层（240）由GaN化合物半导体构成，以及由GaN化合物半导体构成且具有第二导电类型的第二化合物半导体层（250）形成在第二化合物半导体层上的第二电极（262）和电连接到第一化合物半导体层的第一电极（261）。该叠层结构具有脊形条纹结构（258），其中光输出端面Wout中的脊条形结构的宽度大于光入射端面中的宽度Win。载体非注入区域（205）沿着半导体光学放大器的轴线从光输出端面设置在层叠结构的内部区域中。

10. 发明公开

EP2149944A1 Method of driving a laser diode 审中-公开
标题翻译： Verfahren zum Antrieb einer激光二极管
公开(公告)号：EP2149944A1
公开(公告)日：2010-02-03
申请号：EP09009752.8
申请日：2009-07-28
申请人： Sony Corporation , TOHOKU UNIVERSITY
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Oki, Tomoyuki , Masao, Ikeda , Miyajima, Takao , Watanabe, Hideki
IPC分类号： H01S5/042
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译：提供了具有简单结构和配置的超短脉冲/超大功率激光二极管。在驱动激光二极管的方法中，激光二极管由比阈值电流值高10或更多倍的脉冲电流来驱动。脉冲电流的宽度优选为10纳秒以下，脉冲电流的值为0.4安培以上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式