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1. 发明公开

EP2485345A2 Laser diode assembly 有权
标题翻译： Laserdiodenanordnung
公开(公告)号：EP2485345A2
公开(公告)日：2012-08-08
申请号：EP11008275.7
申请日：2011-10-13
申请人： Sony Corporation , Tohoku University
发明人： Kono, Shunsuke , Yokoyama, Hiroyuki , Kuramoto, Masaru , Oki, Tomoyuki
IPC分类号： H01S5/14 , H01S5/065
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0287 , H01S5/141 , H01S5/3063 , H01S5/3202 , H01S5/3216 , H01S5/34333
摘要： A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.
摘要翻译：激光二极管组件包括：锁模激光二极管器件; 配置外部谐振器的衍射光栅将一次或更多次的衍射光返回到锁模激光二极管器件，并将0级衍射光输出到外部; 以及设置在锁模激光二极管器件和衍射光栅之间的成像部分，并且对衍射光栅上的锁模激光二极管器件的光输出端面的图像进行成像。

2. 发明公开

EP2403080A3 Semiconductor optical amplifier 审中-公开
标题翻译：半导体光放大器
公开(公告)号：EP2403080A3
公开(公告)日：2017-11-29
申请号：EP11004801.4
申请日：2011-06-10
申请人： Sony Corporation , TOHOKU UNIVERSITY
发明人： Kuramoto, Masaru , Ikeda, Masao , Koda, Rintaro , Oki, Tomoyuki , Watanabe, Hideki , Miyajima, Takao , Yokoyama, Hiroyuki
IPC分类号： H01S5/50 , H01S5/16 , H01S5/323 , H01S5/10 , H01S5/343 , H01S5/065 , H01S5/06 , H01S5/042 , H01S5/22
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier (200) includes: a laminated structure sequentially including a first compound semiconductor layer (230) composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer (240) having a light amplification region (241) composed of GaN compound semiconductor, and a second compound semiconductor layer (250) composed of GaN compound semiconductor and having a second conductivity type; a second electrode (262) formed on the second compound semiconductor layer; and a first electrode (261) electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure (258), wherein the width of the ridge stripe structure in a light output end face W out is larger than the width W in in a light incident end face. A carrier non-injection region (205) is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：一种半导体光放大器（200），包括：依次包括由GaN化合物半导体构成并具有第一导电类型的第一化合物半导体层（230），具有光放大区域（241）的第三化合物半导体层（240）由GaN化合物半导体构成，以及由GaN化合物半导体构成且具有第二导电类型的第二化合物半导体层（250）形成在第二化合物半导体层上的第二电极（262）和电连接到第一化合物半导体层的第一电极（261）。该叠层结构具有脊形条纹结构（258），其中光输出端面Wout中的脊条形结构的宽度大于光入射端面中的宽度Win。载体非注入区域（205）沿着半导体光学放大器的轴线从光输出端面设置在层叠结构的内部区域中。

3. 发明公开

EP2403080A2 Semiconductor optical amplifier 审中-公开
标题翻译： OptischerHalbleiterverstärker
公开(公告)号：EP2403080A2
公开(公告)日：2012-01-04
申请号：EP11004801.4
申请日：2011-06-10
申请人： Sony Corporation , TOHOKU UNIVERSITY
发明人： Kuramoto, Masaru , Ikeda, Masao , Koda, Rintaro , Oki, Tomoyuki , Watanabe, Hideki , Miyajima, Takao , Yokoyama, Hiroyuki
IPC分类号： H01S5/50 , H01S5/16 , H01S5/323 , H01S5/10
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier (200) includes: a laminated structure sequentially including a first compound semiconductor layer (230) composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer (240) having a light amplification region (241) composed of GaN compound semiconductor, and a second compound semiconductor layer (250) composed of GaN compound semiconductor and having a second conductivity type; a second electrode (262) formed on the second compound semiconductor layer; and a first electrode (261) electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure (258), wherein the width of the ridge stripe structure in a light output end face W out is larger than the width W in in a light incident end face. A carrier non-injection region (205) is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器（200）包括：顺序地包括由GaN化合物半导体构成的第一导电类型的第一化合物半导体层（230）和具有光放大区域（241）的第三化合物半导体层（240）由GaN化合物半导体构成，第二化合物半导体层（250）由GaN化合物半导体构成，具有第二导电型; 形成在第二化合物半导体层上的第二电极（262）和与第一化合物半导体层电连接的第一电极（261）。层叠结构具有棱条结构（258），其中光输出端面W out中的脊条结构的宽度大于光入射端面中的宽度W in。载流子非注入区域（205）沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

4. 发明授权

EP2451032B1 Laser diode assembly and semiconductor optical amplifier assembly 失效
公开(公告)号：EP2451032B1
公开(公告)日：2019-05-08
申请号：EP11008076.9
申请日：2011-10-05
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Kuramoto, Masaru
IPC分类号： H01S5/06 , H01S5/065 , H01S5/14 , H01S5/50 , H01S5/0625 , H01S5/10

5. 发明公开

EP2451032A3 Laser diode assembly and semiconductor optical amplifier assembly 失效
标题翻译：激光二极管组件和半导体激光放大器模块
公开(公告)号：EP2451032A3
公开(公告)日：2014-03-19
申请号：EP11008076.9
申请日：2011-10-05
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Kuramoto, Masaru
IPC分类号： H01S5/06 , H01S5/065 , H01S5/14 , H01S5/50 , H01S5/0625 , H01S5/10
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0064 , H01S5/0071 , H01S5/0078 , H01S5/028 , H01S5/0425 , H01S5/06251 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/141 , H01S5/16 , H01S5/2009 , H01S5/22 , H01S5/3063 , H01S5/309 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S5/50 , H01S2301/176
摘要： A laser diode assembly includes a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation, an external resonator, and a wavelength selective element (82,92,94-97). A long wavelength component of a pulsed laser beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective element, and output to the outside.

6. 发明公开

EP2463972A2 Laser diode device 审中-公开
标题翻译： Laserdiodenvorrichtung
公开(公告)号：EP2463972A2
公开(公告)日：2012-06-13
申请号：EP11008998.4
申请日：2011-11-11
申请人： Sony Corporation , Tohoku University
发明人： Oki, Tomoyuki , Watanabe, Hideki , Koda, Rintaro , Kuramoto, Masaru , Yokoyama, Hiroyuki
IPC分类号： H01S5/10 , H01S5/065 , H01S5/0625 , H01S5/343 , H01S5/022
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/06253 , H01S5/0658 , H01S5/1014 , H01S5/1064 , H01S5/141 , H01S5/22
摘要： A laser diode device includes a laminated structure in which a first compound semiconductor layer (30), a third compound semiconductor layer (40) that has a light emitting region (41) and a saturable absorption region (42), and a second compound semiconductor layer (50) are sequentially layered, a second electrode (62), and a first electrode (61). The laminated structure has ridge stripe structure (56). The second electrode is separated into a first section (62A) to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section (62B) to add electric field to the saturable absorption region by an isolation trench (62C). When minimum width of the ridge stripe structure is W MIN , and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W 2 , 1 2 /W MIN is satisfied.
摘要翻译：激光二极管装置包括层叠结构，其中具有发光区域（41）和可饱和吸收区域（42）的第一化合物半导体层（30），第三化合物半导体层（40）和第二化合物半导体层（50）顺序层叠，第二电极（62）和第一电极（61）。层叠结构具有脊状结构（56）。第二电极被分成第一部分（62A），以通过通过发光区域向第一电极施加直流电流以及第二部分（62B）来获得正向偏置状态，以通过隔离将电场加到可饱和吸收区域沟槽（62C）。当脊条纹结构的最小宽度为W MIN时，第二电极的第二部分与隔离沟槽之间的界面中的第二电极的第二部分的脊状条纹结构的宽度为W 2，1

7. 发明公开

EP2485345A3 Laser diode assembly 有权
标题翻译：激光二极管
公开(公告)号：EP2485345A3
公开(公告)日：2014-03-26
申请号：EP11008275.7
申请日：2011-10-13
申请人： Sony Corporation , Tohoku University
发明人： Kono, Shunsuke , Yokoyama, Hiroyuki , Kuramoto, Masaru , Oki, Tomoyuki
IPC分类号： H01S5/14 , H01S5/065
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0287 , H01S5/141 , H01S5/3063 , H01S5/3202 , H01S5/3216 , H01S5/34333
摘要： A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.

8. 发明公开

EP2451032A2 Laser diode assembly and semiconductor optical amplifier assembly 失效
标题翻译： Laserdiodenbaugruppe undHalbleiterlaserverstärkerbaugruppe
公开(公告)号：EP2451032A2
公开(公告)日：2012-05-09
申请号：EP11008076.9
申请日：2011-10-05
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Kuramoto, Masaru
IPC分类号： H01S5/06 , H01S5/065 , H01S5/14 , H01S5/50 , H01S5/0625 , H01S5/10
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0064 , H01S5/0071 , H01S5/0078 , H01S5/028 , H01S5/0425 , H01S5/06251 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/141 , H01S5/16 , H01S5/2009 , H01S5/22 , H01S5/3063 , H01S5/309 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S5/50 , H01S2301/176
摘要： A laser diode assembly includes a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation, an external resonator, and a wavelength selective element (82,92,94-97). A long wavelength component of a pulsed laser beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective element, and output to the outside.
摘要翻译：激光二极管组件包括锁模激光二极管器件，其中光输出光谱通过自相位调制显示长波长偏移，外部谐振器和波长选择元件（82,92,94-97）。通过外部谐振器从锁模激光二极管器件发射的脉冲激光束的长波长分量由波长选择元件提取，并输出到外部。

9. 发明公开

EP2403081A2 Alignment method of semiconductor optical amplifier and light output device 审中-公开
标题翻译： Ausrichtungsverfahrenfüreinen optischenHalbleiterverstärkerund Lichtemissionsvorrichtung
公开(公告)号：EP2403081A2
公开(公告)日：2012-01-04
申请号：EP11005108.3
申请日：2011-06-22
申请人： Sony Corporation , Tohoku University
发明人： Oki, Tomoyuki , Koda, Rintaro , Kuramoto, Masaru , Miyajima, Takao , Yokoyama, Hiroyuki
IPC分类号： H01S5/50 , G02B6/42
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0014 , H01S5/0064 , H01S5/0071 , H01S5/028 , H01S5/0601 , H01S5/0625 , H01S5/0657 , H01S5/1003 , H01S5/1014 , H01S5/141 , H01S5/2009 , H01S5/22 , H01S5/34333 , H01S5/4006
摘要： Provided is an alignment method of a semiconductor optical amplifier (200) with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier (200) is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source (100) and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier (200) with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source (100) to the semiconductor optical amplifier (200) so that a voltage applied to the semiconductor optical amplifier becomes the maximum.
摘要翻译：本发明提供一种半导体光放大器（200）的对准方法，能够实现半导体光放大器（200）的入射激光与光波导的耦合效率的优化，而不依赖于外部监视装置。半导体光放大器的取向方法是光学放大来自激光光源（100）的激光的方法，并输出调整半导体光放大器（200）相对于激光的相对位置的光放大激光通过在从激光光源（100）向半导体光放大器（200）进入激光的同时，将给定值的电流流向半导体光放大器，使得加到半导体光放大器（200）上的电压变为最大值。

10. 发明授权

EP3154139B1 LIGHT EMITTING ELEMENT 有权
公开(公告)号：EP3154139B1
公开(公告)日：2018-12-26
申请号：EP16199086.6
申请日：2014-08-01
申请人： SONY CORPORATION
发明人： Hamaguchi, Tatsushi , Kuramoto, Masaru , Maeda, Yuki , Futagawa, Noriyuki
IPC分类号： H01S5/183 , H01S5/343 , H01S5/02
CPC分类号： H01S5/3013 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/183 , H01S5/18311 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/18388 , H01S5/18391 , H01S5/34333 , H01S2304/12
摘要： A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

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