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1. 发明公开

EP2367245A2 GaN laser diode and method of driving a laser diode 审中-公开
标题翻译： GaN激光二极管和Verfahren zum Antrieb einer激光二极管
公开(公告)号：EP2367245A2
公开(公告)日：2011-09-21
申请号：EP11001865.2
申请日：2009-07-28
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Oki, Tomoyuki , Masao, Ikeda , Miyajima, Takao , Watanabe, Hideki
IPC分类号： H01S5/042 , H01S5/20 , H01S5/22 , H01S5/323 , H01S5/062
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided including a GaN-based laminate structure body comprising: a first compound semiconductor layer (30), a second compound semiconductor layer (50) comprising a p-type compound semiconductor layer (53, 54, 55), wherein a part of the p-type semiconductor layer (54, 55) is removed to form a ridge section (56), an active layer (40) having a quantum well structure and being arranged between the first compound semiconductor layer (30) and the second compound semiconductor layer (50), a first electrode (61) electrically connected to the first compound semiconductor layer (30), and a second electrode (62) electrically connected to the second compound semiconductor layer (50), wherein the distance from the active layer (40) to the p-type compound semiconductor layer (53, 54, 55) is 1.2x10- 7 m or less, the distance from the active layer (40) to the second electrode (62) is 1 µm or less, and the width of the ridge section (56) is 2 µm or less. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译：提供了具有简单结构和结构的超短脉冲/超大功率激光二极管，其包括：GaN基层压结构体，包括：第一化合物半导体层（30），包含p型的第二化合物半导体层（50）化合物半导体层（53,54,55），其中去除p型半导体层（54,55）的一部分以形成脊部（56），具有量子阱结构的有源层（40）和布置在第一化合物半导体层（30）和第二化合物半导体层（50）之间，电连接到第一化合物半导体层（30）的第一电极（61）和与第二化合物半导体层（50）电连接的第二电极化合物半导体层（50），其中从有源层（40）到p型化合物半导体层（53,54,55）的距离为1.2×10 -7 m以下，与有源层（40）的距离到第二电极（62）的厚度为1μm以下脊部（56）的宽度为2μm以下。在驱动激光二极管的方法中，激光二极管由比阈值电流值高10或更多倍的脉冲电流来驱动。脉冲电流的宽度优选为10纳秒以下，脉冲电流的值为0.4安培以上。

2. 发明公开

EP2149944A1 Method of driving a laser diode 审中-公开
标题翻译： Verfahren zum Antrieb einer激光二极管
公开(公告)号：EP2149944A1
公开(公告)日：2010-02-03
申请号：EP09009752.8
申请日：2009-07-28
申请人： Sony Corporation , TOHOKU UNIVERSITY
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Oki, Tomoyuki , Masao, Ikeda , Miyajima, Takao , Watanabe, Hideki
IPC分类号： H01S5/042
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译：提供了具有简单结构和配置的超短脉冲/超大功率激光二极管。在驱动激光二极管的方法中，激光二极管由比阈值电流值高10或更多倍的脉冲电流来驱动。脉冲电流的宽度优选为10纳秒以下，脉冲电流的值为0.4安培以上。

3. 发明公开

EP2367245A3 GaN laser diode and method of driving a laser diode 审中-公开
标题翻译：的GaN激光二极管和驱动激光二极管的方法
公开(公告)号：EP2367245A3
公开(公告)日：2012-10-31
申请号：EP11001865.2
申请日：2009-07-28
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Oki, Tomoyuki , Masao, Ikeda , Miyajima, Takao , Watanabe, Hideki
IPC分类号： H01S5/042 , H01S5/20 , H01S5/22 , H01S5/323 , H01S5/062
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided including a GaN-based laminate structure body comprising: a first compound semiconductor layer (30), a second compound semiconductor layer (50) comprising a p-type compound semiconductor layer (53, 54, 55), wherein a part of the p-type semiconductor layer (54, 55) is removed to form a ridge section (56), an active layer (40) having a quantum well structure and being arranged between the first compound semiconductor layer (30) and the second compound semiconductor layer (50), a first electrode (61) electrically connected to the first compound semiconductor layer (30), and a second electrode (62) electrically connected to the second compound semiconductor layer (50), wherein the distance from the active layer (40) to the p-type compound semiconductor layer (53, 54, 55) is 1.2x10- 7 m or less, the distance from the active layer (40) to the second electrode (62) is 1 µm or less, and the width of the ridge section (56) is 2 µm or less. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

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