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标题翻译：贝尔法斯特（HERTELLUNGSVERFAHRENFÜREIN LICHTAUSSENDENDES BAUTEIL）

公开(公告)号：EP1391941A1

公开(公告)日：2004-02-25

申请号：EP02720596.2

申请日：2002-04-25

申请人： Shin-Etsu Handotai Co., Ltd

发明人： ISHIZAKI, Jun-ya, Shin-Etsu Handotai Co., Ltd.

IPC分类号： H01L33/00 , H01L21/365 , C23C16/30

CPC分类号： C30B25/183 , C23C16/40 , C30B25/02 , C30B25/105 , C30B29/16 , H01L21/0242 , H01L21/02472 , H01L21/02477 , H01L21/0248 , H01L21/02483 , H01L21/02507 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/0262 , H01L33/0083

摘要： In a first invention, a p-type Mg x Zn 1-x O-type layer is grown based on a metal organic vapor-phase epitaxy process by supplying organometallic gases which serves as a metal source, an oxygen component source gas and a p-type dopant gas into a reaction vessel. During and/or after completion of the growth of the p-type Mg x Zn 1-x O-type layer, the Mg x Zn 1-x O-type thereof is annealed in an oxygen-containing atmosphere. This is successful in forming the layer of p-type oxide in a highly reproducible and stable manner for use in light emitting device having the layer of p-type oxide of Zn and Mg. In a second invention, a semiconductor layer which composes the light emitting layer portion is grown by introducing source gases in a reaction vessel having the substrate housed therein, and by depositing a semiconductor material produced by chemical reactions of the source gas on the main surface of the substrate. A vapor-phase epitaxy process of the semiconductor layer is proceed while irradiating ultraviolet light to the main surface of the substrate and the source gases. This is successful in sharply enhancing reaction efficiency of the source gases when the semiconductor layer for composing the light emitting layer portion is formed by a vapor-phase epitaxy process, and in readily obtaining the semiconductor layer having only a less amount of crystal defects. In a third invention, a buffer layer having at least an Mg a Zn 1-a O-type oxide layer on the contact side with the light emitting layer portion is grown on the substrate, and the light emitting layer portion is grown on the buffer layer. The buffer layer is oriented so as to align the c-axis thereof to the thickness-wise direction, and is obtained by forming a metal monoatomic layer on the substrate based on the atomic layer epitaxy, and then by growing residual oxygen atom layers and the metal atom layers. This is successful in obtaining the light emitting portion with an excellent quality. In a fourth invention, a ZnO-base semiconductor active layer included in a double heterostructured, light emitting layer portion is formed using a ZnO-base semiconductor mainly composed of ZnO containing Se or Te, so as to introduce Se or Te, the elements in the same Group with oxygen, into oxygen deficiency sites in the ZnO crystal possibly produced during the formation process of the active layer, to thereby improve crystallinity of the active layer. Introduction of Se or Te shifts the emission wavelength obtainable from the active layer towards longer wavelength regions as compared with the active layer composed of ZnO having a band gap energy causative of shorter wavelength light than blue light. This is contributive to realization of blue-light emitting devices.

摘要翻译：在第一发明中，通过供给作为金属源，氧成分源气体和p型掺杂剂气体的有机金属气体，通过金属有机气相外延法生长p型Mg x Zn 1-x O型层进入反应容器。在p型Mg x Zn 1-x O型层的生长和/或完成之后，其Mg x Zn 1-x O型在含氧气氛中进行退火。成功地以高度可重现和稳定的方式形成p型氧化物层，用于具有Zn和Mg的p型氧化物层的发光器件中。在第二发明中，构成发光层部分的半导体层通过将源气体引入到容纳有基板的反应容器中，并且通过将源气体的化学反应产生的半导体材料沉积在底物。在对基板的主表面和源气体照射紫外光的同时进行半导体层的气相外延处理。当通过气相外延工艺形成用于构成发光层部分的半导体层时，并且容易地获得仅具有较少量的晶体缺陷的半导体层，这样可以显着提高源气体的反应效率。在第三发明中，在衬底上生长至少具有与发光层部分的接触侧的MgaZn1-aO型氧化物层的缓冲层，并且在缓冲层上生长发光层部分。取向缓冲层以使其c轴与厚度方向对准，并且通过基于原子层外延在基板上形成金属单原子层，然后通过生长残余的氧原子层和金属原子层。这在成功地获得具有优良品质的发光部分上。在第四发明中，使用主要由含有Se或Te的ZnO的ZnO基半导体形成包含在双异质结的发光层部分中的ZnO基半导体有源层，以将Se或Te引入到相同的氧团组成ZnO活性层形成过程中可能产生的ZnO晶体中的缺氧部位，从而提高有源层的结晶度。与由具有比蓝光短的波长光的带隙能量的ZnO构成的有源层相比，Se或Te的引入将有源层可获得的发射波长向较长波长区域移动。这有助于蓝光发射装置的实现。

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