专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP0887442A1 Process and apparatus for producing polycrystalline semiconductor ingot 失效
标题翻译： Verfahren und Vorrichtung zur Herstellung polykristalliner Halbleiter-blöcke
公开(公告)号：EP0887442A1
公开(公告)日：1998-12-30
申请号：EP98111342.6
申请日：1998-06-19
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamazaki, Motoharu , Okuno, Tetsuhiro
IPC分类号： C30B11/00 , C30B29/06
CPC分类号： C30B29/06 , C30B11/002
摘要： A silicon semiconductor material (15) is charged in a double-structured crucible of an outer crucible (1) and an inner crucible (2). The crucible is heated from the upper side thereof by the heat radiated from a heating member (8) energized by an induction heating coil (7), so that the silicon raw semiconductor material is melted. The bottom of the crucible (1) is mounted on a supporting bed (4) cooled by cooling water supplied from a cooling medium tank (13). The silicon semiconductor material (15) is melted in the inner crucible (2) and starts solidifying from the bottom portion thereof. The silicon semiconductor material (15) expands in volume at the time of solidification. Since a gap is formed between the inner crucible (2) and the outer crucible (1), however, the outward extension of the inner crucible (1) with the silicon semiconductor material (15) alleviates a strain generated at the time of solidification, thereby producing an excellent polycrystalline semiconductor ingot. As a result, the strain in the polycrystalline semiconductor ingot produced by the unidirectional solidification process is reduced to improve the quality.
摘要翻译：将硅半导体材料（15）装入外坩埚（1）和内坩埚（2）的双结构坩埚中。通过从由感应加热线圈（7）激励的加热部件（8）辐射的热量从其上侧加热坩埚，使得硅原料半导体材料熔化。坩埚（1）的底部安装在由冷却介质罐（13）供应的冷却水冷却的支撑床（4）上。硅半导体材料（15）在内坩埚（2）中熔化，并从其底部开始凝固。在固化时，硅半导体材料（15）的体积膨胀。然而，由于内坩埚（2）和外坩埚（1）之间形成间隙，所以内部坩埚（1）与硅半导体材料（15）的向外延伸减轻了凝固时产生的应变，从而生产出优异的多晶半导体锭。结果，通过单向凝固工艺生产的多晶半导体锭中的应变被降低以提高质量。

2. 发明公开

EP0781865A2 Process and apparatus for producing polycrystalline semiconductors 失效
标题翻译： Verfahren und Vorrichtung zur Herstellung polykristalliner Halbleiter
公开(公告)号：EP0781865A2
公开(公告)日：1997-07-02
申请号：EP96120840.2
申请日：1996-12-23
申请人： SHARP KABUSHIKI KAISHA
发明人： Okuno, Tetsuhiro
IPC分类号： C30B11/00 , C30B29/06
CPC分类号： C30B29/06 , C30B11/003 , Y10T117/1076 , Y10T117/1088 , Y10T117/1096
摘要： A process and an apparatus for producing a polycrystalline semiconductor including charging a raw semiconductor material into a crucible (9), heating to melt the raw semiconductor material in the crucible (9) by heating means (5), solidifying the melted material while depriving the bottom of the crucible (9) of heat, and then cooling the crucible (9) to cool the solidified semiconductor, in an atmosphere inert to the semiconductor throughout, characterized by alternately subjecting the semiconductor crystal to growth and annealing in the solidification step while periodically varying the amount of heat liberated from the raw semiconductor material.
摘要翻译：一种用于制造多晶半导体的工艺和装置，包括将原料半导体材料装入坩埚（9）中，加热以通过加热装置（5）熔化坩埚（9）中的原料半导体材料，使熔化的材料固化，同时剥夺坩埚（9）的底部，然后冷却坩埚（9）以在半导体惰性气氛中冷却凝固的半导体，其特征在于，在凝固步骤中交替地使半导体晶体生长和退火，同时周期性地改变从原料半导体材料释放的热量。

3. 发明公开

EP2426087A3 Silicon recycling method, and silicon and silicon ingot manufactured with that method 审中-公开
标题翻译：硅和硅的回收方法和用该方法生产的硅块
公开(公告)号：EP2426087A3
公开(公告)日：2012-12-19
申请号：EP11009549.4
申请日：2006-07-03
申请人： Sharp Kabushiki Kaisha
发明人： Fukuyama, Toshiaki , Okuno, Tetsuhiro , Wakuda, Junzo
IPC分类号： C01B33/037 , C01B33/02 , H01L31/04
CPC分类号： C01B33/037 , C01B33/021 , Y02E10/546
摘要： In order to efficiently recycle a silicon scrap obtained by cutting a silicon chunk as a raw material silicon for solar batteries, a silicon recycling method of the present invention, according to one aspect, includes the steps of melting a silicon scrap by heating, and immersing a crystallization substrate in molten silicon and depositing silicon on a surface of the crystallization substrate. The step of separating silicon on the surface of the crystallization substrate from the crystallization substrate is preferably included. In addition, a silicon ingot obtained by melting the silicon raw material for solar batteries in a mold and solidifying the same is suitable as the silicon chunk.

4. 发明授权

EP0887442B1 Process and apparatus for producing polycrystalline semiconductor ingot 失效
标题翻译：用于制造多晶半导体块的方法和装置
公开(公告)号：EP0887442B1
公开(公告)日：2005-12-21
申请号：EP98111342.6
申请日：1998-06-19
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamazaki, Motoharu , Okuno, Tetsuhiro
IPC分类号： C30B11/00 , C30B29/06
CPC分类号： C30B29/06 , C30B11/002

5. 发明授权

EP0889148B1 Process for producing polycrystalline semiconductor 失效
标题翻译：一种用于制备多晶半导体的过程
公开(公告)号：EP0889148B1
公开(公告)日：2005-05-04
申请号：EP98111872.2
申请日：1998-06-26
申请人： SHARP KABUSHIKI KAISHA
发明人： Okuno, Tetsuhiro
IPC分类号： C30B11/00 , C30B29/06
CPC分类号： C30B29/06 , C30B11/003 , Y10T83/448 , Y10T83/4493

6. 发明公开

EP2426087A2 Silicon recycling method, and silicon and silicon ingot manufactured with that method 审中-公开
标题翻译： Siliciumrecyclingverfahren und Silicium sowie mit dem Verfahren hergestellter Siliciumblock
公开(公告)号：EP2426087A2
公开(公告)日：2012-03-07
申请号：EP11009549.4
申请日：2006-07-03
申请人： Sharp Kabushiki Kaisha
发明人： Fukuyama, Toshiaki , Okuno, Tetsuhiro , Wakuda, Junzo
IPC分类号： C01B33/037 , C01B33/02 , H01L31/04
CPC分类号： C01B33/037 , C01B33/021 , Y02E10/546
摘要： In order to efficiently recycle a silicon scrap obtained by cutting a silicon chunk as a raw material silicon for solar batteries, a silicon recycling method of the present invention, according to one aspect, includes the steps of melting a silicon scrap by heating, and immersing a crystallization substrate in molten silicon and depositing silicon on a surface of the crystallization substrate. The step of separating silicon on the surface of the crystallization substrate from the crystallization substrate is preferably included. In addition, a silicon ingot obtained by melting the silicon raw material for solar batteries in a mold and solidifying the same is suitable as the silicon chunk.
摘要翻译：为了有效地回收通过切割作为太阳能电池的原料硅的硅块获得的硅废料，根据一个方面的本发明的硅回收方法包括以下步骤：通过加热熔化硅废料并浸渍熔融硅中的结晶衬底并在结晶衬底的表面上沉积硅。优选包括从结晶衬底分离结晶衬底表面上的硅的步骤。此外，通过将模具中的太阳能电池用硅原料熔化并使其固化而获得的硅锭适合作为硅块。

7. 发明授权

EP0781865B1 Process for producing polycrystalline semiconductors 失效
标题翻译：一种用于制备多晶半导体的过程
公开(公告)号：EP0781865B1
公开(公告)日：2002-09-11
申请号：EP96120840.2
申请日：1996-12-23
申请人： SHARP KABUSHIKI KAISHA
发明人： Okuno, Tetsuhiro
IPC分类号： C30B11/00 , C30B29/06
CPC分类号： C30B29/06 , C30B11/003 , Y10T117/1076 , Y10T117/1088 , Y10T117/1096

8. 发明公开

EP0889148A1 Process and apparatus for producing polycrystalline semiconductor 失效
标题翻译：生产多晶半导体的工艺和设备
公开(公告)号：EP0889148A1
公开(公告)日：1999-01-07
申请号：EP98111872.2
申请日：1998-06-26
申请人： SHARP KABUSHIKI KAISHA
发明人： Okuno, Tetsuhiro
IPC分类号： C30B11/00 , C30B29/06
CPC分类号： C30B29/06 , C30B11/003 , Y10T83/448 , Y10T83/4493
摘要： A process and apparatus for producing a high-quality polycrystalline semiconductor ingot with excellent crystallographic properties are disclosed. The interior of an airtight vessel (1) is kept in an inert atmosphere for semiconductors. A raw semiconductor material (17) is charged in a crucible (9), and the raw semiconductor material (17) is heated by an induction heating coil (5) so as to be melted. Then the bottom of the crucible is deprived of heat for causing the raw semiconductor material (17) to solidify, thereby producing a polycrystalline semiconductor. The semiconductor crystal grows in one direction from the bottom to the top of the crucible while the heat emission is changed in accordance with a predetermined relationship for keeping the solidification rate of the raw semiconductor material (17) constant.
摘要翻译：公开了用于制造具有优异晶体学性质的高质量多晶半导体晶锭的方法和设备。密封容器（1）的内部保持在半导体的惰性气氛中。将原料半导体材料（17）装入坩埚（9）中，并通过感应加热线圈（5）加热原料半导体材料（17）以使其熔化。然后，坩埚的底部被剥夺热量，以使原料半导体材料（17）凝固，由此产生多晶半导体。半导体晶体从坩埚的底部到顶部在一个方向上生长，同时根据预定关系改变放热量，以保持半导体材料（17）的凝固速度恒定。

9. 发明授权

EP0748884B1 Process for producing polycrystalline semiconductors 失效
标题翻译：一种用于制备多晶半导体的过程
公开(公告)号：EP0748884B1
公开(公告)日：1999-09-29
申请号：EP96109528.8
申请日：1996-06-13
申请人： SHARP KABUSHIKI KAISHA
发明人： Okuno, Tetsuhiro
IPC分类号： C30B11/00
CPC分类号： C30B29/06 , C30B11/002 , C30B11/003

10. 发明公开

EP0748884A1 Process and apparatus for producing polycrystalline semiconductors 失效
标题翻译： Verfahren und Vorrichtung zur Herstellung polykristalliner Halbleiter
公开(公告)号：EP0748884A1
公开(公告)日：1996-12-18
申请号：EP96109528.8
申请日：1996-06-13
申请人： SHARP KABUSHIKI KAISHA
发明人： Okuno, Tetsuhiro
IPC分类号： C30B11/00
CPC分类号： C30B29/06 , C30B11/002 , C30B11/003
摘要： For the highly repeatable growth of high-quality semiconductor polycrystals with excellent crystallographic properties, at a low cost, there are provided a process for producing a polycrystalline semiconductor including charging a raw semiconductor material into a crucible (9) with semiconductor seed crystals placed on its bottom in an atmosphere inert to the semiconductor, heating to melt the raw semiconductor material in the crucible (9) by heating means (5) while depriving the bottom of the crucible (9) of heat to maintain the underside temperature T1 of the bottom below the melting point of the raw semiconductor material, and then cooling the crucible (9) to solidify the melted material, wherein the underside temperature T1 of the bottom of the crucible under heating is measured, and the heating by the heating means (5) is suspended when the rate Δt of time-dependent change of the temperature increases over a predetermined value, to thereby melt only the raw semiconductor material, substantially without melting the seed crystals, and the melted raw material is then solidified to grow a polycrystal from the seed crystals, as well as a manufacturing apparatus therefor.
摘要翻译：对于具有优异的晶体学特性的高质量半导体多晶体的高度可重复的生长，以低成本提供了一种制造多晶半导体的方法，其包括将原料半导体材料装入坩埚（9）中，半导体晶种放置在其上底部处于对半导体惰性的气氛中，加热以通过加热装置（5）熔化坩埚（9）中的原料半导体材料，同时剥离坩埚（9）的底部加热，以将底部的下侧温度T1保持在下方原料半导体材料的熔点，然后冷却坩埚（9）以固化熔融材料，其中测量加热坩埚底部的下侧温度T1，并且加热装置（5）的加热为当温度的时间依赖性变化的速率DELTA t超过预定值时暂停，从而仅熔化原料半导体配合物实质上不熔化晶种，然后将熔融的原料固化，从晶种生长多晶，以及其制造装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式