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1. 发明授权

EP1635457B1 Electronic component, circuit board, electronic apparatus, and method for manufacturing the electronic component 有权
标题翻译：电子部件，印刷电路板，电子设备和电子部件的制造方法
公开(公告)号：EP1635457B1
公开(公告)日：2011-06-15
申请号：EP05018260.9
申请日：2005-08-23
申请人： Seiko Epson Corporation
发明人： Ito, Haruki , Hashimoto, Nobuaki
IPC分类号： H03H9/10
CPC分类号： H03H9/0552 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05186 , H01L2224/05569 , H01L2224/05572 , H01L2224/13 , H03H9/059 , H03H9/1071 , H01L2924/00014 , H01L2924/04941 , H01L2924/01074 , H01L2924/01023 , H01L2924/013

2. 发明公开

EP1724744A1 Test probe and manufacturing method for test probe 审中-公开
标题翻译： Testsonde和Herstellungsverfahrenfüreine Testsonde
公开(公告)号：EP1724744A1
公开(公告)日：2006-11-22
申请号：EP06010112.8
申请日：2006-05-16
申请人： SEIKO EPSON CORPORATION
发明人： Ito, Haruki
IPC分类号： G09G3/00
CPC分类号： G01R1/0735
摘要： A test probe for testing a semiconductor device (100), includes: a substrate (2) having a first surface (2a) and a second surface (2b); an input projection portion (11) formed on the first surface (2a); an output projection portion (21) formed on the first surface (2a); input contacting portions (13), each of which is in contact with each of the input terminals (101) and is formed on the input projection portion (11); output contacting portions (23), each of which is in contact with each of the output terminals (102) and is formed on the output projection portion (21); input conductive portions (14) formed on the first surface (2a), each of which is electrically connected to each of the input contacting portions (13); and output conductive portions (24) formed on the first surface (2a), each of which is electrically connected to each of the output contacting portions (23).
摘要翻译：一种用于测试半导体器件（100）的测试探针，包括：具有第一表面（2a）和第二表面（2b）的衬底（2）; 形成在所述第一表面（2a）上的输入突出部分（11）; 形成在所述第一表面（2a）上的输出突起部分（21）输入接触部分（13），每个输入接触部分（13）与每个输入端子（101）接触并形成在输入突出部分（11）上; 输出接触部分（23），每个输出接触部分（23）与每个输出端子（102）接触并形成在输出突出部分（21）上; 形成在第一表面（2a）上的输入导电部分（14），每个输入导电部分电连接到每个输入接触部分（13）; 以及输出形成在所述第一表面（2a）上的导电部分（24），每个所述导电部分电连接到每个所述输出接触部分（23）。

3. 发明公开

EP1544913A2 Semiconductor device and method of manufacturing thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：EP1544913A2
公开(公告)日：2005-06-22
申请号：EP04029836.6
申请日：2004-12-16
申请人： SEIKO EPSON CORPORATION
发明人： Ito, Haruki
IPC分类号： H01L23/31
CPC分类号： H01L23/5226 , H01L23/293 , H01L23/3114 , H01L23/3192 , H01L23/49816 , H01L23/5329 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/17 , H01L2224/02125 , H01L2224/02126 , H01L2224/02331 , H01L2224/0236 , H01L2224/02373 , H01L2224/02375 , H01L2224/02377 , H01L2224/02379 , H01L2224/02381 , H01L2224/024 , H01L2224/11334 , H01L2224/1146 , H01L2224/13014 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2224/14131 , H01L2224/16225 , H01L2224/16227 , H01L2224/94 , H01L2924/0002 , H01L2924/01022 , H01L2924/01029 , H01L2924/01074 , H01L2924/013 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/186 , H01L2924/3512 , H01L2924/00 , H01L2224/11
摘要： The object of the invention disclosed here is the provision of a semiconductor device, which can correspond to a large size chip and be provided with many external terminals with fine wiring with high reliable connection. A semiconductor device (1) comprises a semiconductor element (2) including a plurality of electrodes (9); a single or a plurality of resin layers, a plurality of wirings (4) electrically connected to the electrode (9), and a plurality of external terminals (7) electrically connected to the wirings (4). A part of or all of the plurality of wirings (4) comprises a first wiring (4a) directed to the center (10) of the semiconductor element (2) from a portion coupled to the electrodes (9); and a second wiring (4b) which is directed to an outer area from the center (10) of the semiconductor element (2) and coupled to the external terminals (7). At least one resin layer is formed between the first wiring (4a) and the second wiring (4b).
摘要翻译：这里公开的本发明的目的是提供一种半导体器件，该半导体器件可以对应于大尺寸芯片并且具有许多具有高可靠连接的精细布线的外部端子。半导体装置（1）包括：具有多个电极（9）的半导体元件（2）; 一个或多个树脂层，电连接到电极（9）的多个布线（4），以及电连接到布线（4）的多个外部端子（7）。多个布线（4）的一部分或全部包括从与电极（9）连接的部分朝向半导体元件（2）的中心（10）的第一布线（4a），以及从半导体元件（2）的中心（10）朝向外部区域并耦合到外部端子（7）的第二布线（4b）。在第一布线（4a）和第二布线（4b）之间形成至少一个树脂层。

4. 发明公开

EP1427007A2 Electrodes for semiconductor device and method for manufacturing the same 有权
标题翻译： Halbleiterbauelement mit hervorstehendenAnschlüssenund Verfahren zu dessen Herstellung
公开(公告)号：EP1427007A2
公开(公告)日：2004-06-09
申请号：EP03027709.9
申请日：2003-12-02
申请人： SEIKO EPSON CORPORATION
发明人： Ito, Haruki
IPC分类号： H01L21/60
CPC分类号： H01L24/14 , G02F1/13458 , H01L21/4846 , H01L23/485 , H01L24/02 , H01L24/11 , H01L24/13 , H01L2224/0236 , H01L2224/02375 , H01L2224/02377 , H01L2224/024 , H01L2224/0401 , H01L2224/05124 , H01L2224/114 , H01L2224/1145 , H01L2224/1146 , H01L2224/1161 , H01L2224/11622 , H01L2224/11901 , H01L2224/12105 , H01L2224/13008 , H01L2224/13013 , H01L2224/13018 , H01L2224/1319 , H01L2224/13582 , H01L2224/13644 , H01L2224/13666 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3025 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprises electrodes (2), a plurality of protrusions (4) which are made of a resin and which protrude higher than the electrodes (2), and conductive layers (5) which are electrically connected to the electrodes (2) and which cover the top surfaces of the protrusions (4). The method for manufacturing the semiconductor device includes a step of applying a layer (4a) of the resin to the semiconductor device except for the electrodes (2), a step of patterning the conductive layers (5) on the electrodes (2) and the layer (4a) of the resin in accordance with the protrusions (4), and a step of removing the portions of the layer (4a) of the resin located between the conductive layers (5) by the use of the patterned conductive layers (5) as masks so as to form the protrusions (4).
摘要翻译：半导体器件包括电极（2），由树脂制成并突出于电极（2）的多个突起（4）和与电极（2）电连接的导电层（5）和其覆盖突起（4）的顶表面。制造半导体器件的方法包括将除了电极（2）之外的树脂层（4a）施加到半导体器件的步骤，对电极（2）上的导电层（5）和根据突起（4）的树脂层（4a），以及通过使用图案化的导电层（5）去除位于导电层（5）之间的树脂的层（4a）的部分的步骤）作为掩模，以形成突起（4）。

5. 发明公开

EP1544913A3 Semiconductor device and method of manufacturing thereof 有权
标题翻译：半导体装置和方法，用于制备它们的
公开(公告)号：EP1544913A3
公开(公告)日：2011-11-09
申请号：EP04029836.6
申请日：2004-12-16
申请人： Seiko Epson Corporation
发明人： Ito, Haruki
IPC分类号： H01L23/31
CPC分类号： H01L23/5226 , H01L23/293 , H01L23/3114 , H01L23/3192 , H01L23/49816 , H01L23/5329 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/17 , H01L2224/02125 , H01L2224/02126 , H01L2224/02331 , H01L2224/0236 , H01L2224/02373 , H01L2224/02375 , H01L2224/02377 , H01L2224/02379 , H01L2224/02381 , H01L2224/024 , H01L2224/11334 , H01L2224/1146 , H01L2224/13014 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2224/14131 , H01L2224/16225 , H01L2224/16227 , H01L2224/94 , H01L2924/0002 , H01L2924/01022 , H01L2924/01029 , H01L2924/01074 , H01L2924/013 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/186 , H01L2924/3512 , H01L2924/00 , H01L2224/11
摘要： The object of the invention disclosed here is the provision of a semiconductor device, which can correspond to a large size chip and be provided with many external terminals with fine wiring with high reliable connection. A semiconductor device (1) comprises a semiconductor element (2) including a plurality of electrodes (9); a single or a plurality of resin layers, a plurality of wirings (4) electrically connected to the electrode (9), and a plurality of external terminals (7) electrically connected to the wirings (4). A part of or all of the plurality of wirings (4) comprises a first wiring (4a) directed to the center (10) of the semiconductor element (2) from a portion coupled to the electrodes (9); and a second wiring (4b) which is directed to an outer area from the center (10) of the semiconductor element (2) and coupled to the external terminals (7). At least one resin layer is formed between the first wiring (4a) and the second wiring (4b).

6. 发明公开

EP2267895A1 Electronic component, circuit board, electronic apparatus, and method for manufacturing the electronic component 有权
标题翻译：电子部件，印刷电路板，电子设备和电子部件的制造方法
公开(公告)号：EP2267895A1
公开(公告)日：2010-12-29
申请号：EP10176159.1
申请日：2005-08-23
申请人： Seiko Epson Corporation
发明人： Ito, Haruki , Hashimoto, Nobuaki
IPC分类号： H03H9/10
CPC分类号： H03H9/0552 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05186 , H01L2224/05569 , H01L2224/05572 , H01L2224/13 , H03H9/059 , H03H9/1071 , H01L2924/00014 , H01L2924/04941 , H01L2924/01074 , H01L2924/01023 , H01L2924/013
摘要： An electronic component (1) includes: a semiconductor substrate (10) having a first surface (10A) and a second surface (10B) opposing to the first surface (10A); a trans-substrate conductive plug (12) that penetrates the semiconductor substrate (10) from the first surface (10A) to the second surface (10B); an electronic element (50) provided in the vicinity of the first surface (10A) of the semiconductor; and a sealing member (40) that seals the electronic element (50) between the sealing member (40) and the first surface (10A), wherein the electronic element (50) is electrically connected to the trans-substrate conductive plug (12).
摘要翻译：一种电子部件（1）包括：具有第一面（10A）和第二表面（10B）相对的第一表面（10A）的半导体衬底（10）; 反式基板导电插塞（12）做了贯通从第一表面（10A）向第二面（10B）的半导体衬底（10）; 到在所述第一表面（10A）的半导体的附近设置电子元件（50）; 和密封部件（40）做了密封在密封构件（40）和第一表面（10A）worin电子元件之间的电子元件（50）（50）是电连接到反式基板的导电插塞（12），

7. 发明公开

EP1675171A2 Semiconductor device, method for manufacturing semiconductor device, circuit board, and electronic instrument 有权
标题翻译：半导体器件及其制造方法，印刷电路板和电子仪器
公开(公告)号：EP1675171A2
公开(公告)日：2006-06-28
申请号：EP05027762.3
申请日：2005-12-19
申请人： SEIKO EPSON CORPORATION
发明人： Ito, Haruki
IPC分类号： H01L23/31 , H01L23/48
CPC分类号： H01L21/76898 , H01L21/6835 , H01L23/3114 , H01L23/481 , H01L24/02 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/13009 , H01L2224/13099 , H01L2224/13147 , H01L2224/16 , H01L2224/16146 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06586 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/00
摘要： A semiconductor device (1) includes: a semiconductor substrate (10) having an active surface (10A) and a back surface (10B); an integrated circuit formed on the active surface (10A); a feedthrough electrode (12) penetrating the semiconductor substrate (10), and projecting from the active surface (10A) and the back surface (10B); a first resin layer (18) formed on the active surface (10A), having a thickness greater than a height of a portion of the feedthrough electrode (12) that projects from the active surface (10A), and having an opening portion (18H) for exposing at least a portion of the feedthrough electrode (12); a wiring layer (21) which is formed on the first resin layer (18), and which is connected to the feedthrough electrode (12) through the opening portion (18H); and an external connecting terminal (23) connected to the wiring layer (21).
摘要翻译：一种半导体装置（1）包括：具有在有源表面（10A）和后表面（10B）的半导体衬底（10）; 在活性表面（10A）上形成的集成电路; 一个贯通电极（12）贯通所述半导体基板（10），以及从所述活性表面（10A）和后表面（10B）投射; 形成在所述有源表面上具有的厚度比所述贯通电极的一部分（12）的高度大（10A）上的第一树脂层（18）并从所述有效面（10A）的项目，并且具有开口部（18H ），用于至少曝露贯通电极（12）的一部分; 其连接到所述贯通电极（12）通过开口部（18H），其在第一树脂层（18）上形成的布线层（21）所有的，和所有; 和外部连接端子（23）连接到布线层（21）。

8. 发明公开

EP1635457A2 Electronic component, circuit board, electronic apparatus, and method for manufacturing the electronic component 有权
标题翻译：电子部件，印刷电路板，电子设备和电子部件的制造方法
公开(公告)号：EP1635457A2
公开(公告)日：2006-03-15
申请号：EP05018260.9
申请日：2005-08-23
申请人： SEIKO EPSON CORPORATION
发明人： Ito, Haruki , Hashimoto, Nobuaki
IPC分类号： H03H9/10
CPC分类号： H03H9/0552 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05186 , H01L2224/05569 , H01L2224/05572 , H01L2224/13 , H03H9/059 , H03H9/1071 , H01L2924/00014 , H01L2924/04941 , H01L2924/01074 , H01L2924/01023 , H01L2924/013
摘要： An electronic component (1) includes: a semiconductor substrate (10) having a first surface (10A) and a second surface (10B) opposing to the first surface (10A); a trans-substrate conductive plug (12) that penetrates the semiconductor substrate (10) from the first surface (10A) to the second surface (10B); an electronic element (50) provided in the vicinity of the first surface (10A) of the semiconductor; and a sealing member (40) that seals the electronic element (50) between the sealing member (40) and the first surface (10A), wherein the electronic element (50) is electrically connected to the trans-substrate conductive plug (12).
摘要翻译：一种电子部件（1）包括：具有第一面（10A）和第二表面（10B）相对的第一表面（10A）的半导体衬底（10）; 反式基板导电插塞（12）做了贯通从第一表面（10A）向第二面（10B）的半导体衬底（10）; 到在所述第一表面（10A）的半导体的附近设置电子元件（50）; 和密封部件（40）做了密封在密封构件（40）和第一表面（10A）worin电子元件之间的电子元件（50）（50）是电连接到反式基板的导电插塞（12），该电子元件包括表面声波器件。

9. 发明公开

EP1675171A3 Semiconductor device, method for manufacturing semiconductor device, circuit board, and electronic instrument 有权
标题翻译：半导体器件及其制造方法，印刷电路板和电子仪器
公开(公告)号：EP1675171A3
公开(公告)日：2007-10-31
申请号：EP05027762.3
申请日：2005-12-19
申请人： Seiko Epson Corporation
发明人： Ito, Haruki
IPC分类号： H01L23/31 , H01L23/48
CPC分类号： H01L21/76898 , H01L21/6835 , H01L23/3114 , H01L23/481 , H01L24/02 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/13009 , H01L2224/13099 , H01L2224/13147 , H01L2224/16 , H01L2224/16146 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06586 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/00
摘要： A semiconductor device (1) includes: a semiconductor substrate (10) having an active surface (10A) and a back surface (10B); an integrated circuit formed on the active surface (10A); a feedthrough electrode (12) penetrating the semiconductor substrate (10), and projecting from the active surface (10A) and the back surface (10B); a first resin layer (18) formed on the active surface (10A), having a thickness greater than a height of a portion of the feedthrough electrode (12) that projects from the active surface (10A), and having an opening portion (18H) for exposing at least a portion of the feedthrough electrode (12); a wiring layer (21) which is formed on the first resin layer (18), and which is connected to the feedthrough electrode (12) through the opening portion (18H); and an external connecting terminal (23) connected to the wiring layer (21).

10. 发明公开

EP1427007A3 Electrodes for semiconductor device and method for manufacturing the same 有权
标题翻译： AnschlüssefürHalbleiterbauelement und Verfahren zu deren Herstellung
公开(公告)号：EP1427007A3
公开(公告)日：2006-01-04
申请号：EP03027709.9
申请日：2003-12-02
申请人： SEIKO EPSON CORPORATION
发明人： Ito, Haruki
IPC分类号： H01L21/60 , H01L23/485
CPC分类号： H01L24/14 , G02F1/13458 , H01L21/4846 , H01L23/485 , H01L24/02 , H01L24/11 , H01L24/13 , H01L2224/0236 , H01L2224/02375 , H01L2224/02377 , H01L2224/024 , H01L2224/0401 , H01L2224/05124 , H01L2224/114 , H01L2224/1145 , H01L2224/1146 , H01L2224/1161 , H01L2224/11622 , H01L2224/11901 , H01L2224/12105 , H01L2224/13008 , H01L2224/13013 , H01L2224/13018 , H01L2224/1319 , H01L2224/13582 , H01L2224/13644 , H01L2224/13666 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3025 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprises electrodes (2), a plurality of protrusions (4) which are made of a resin and which protrude higher than the electrodes (2), and conductive layers (5) which are electrically connected to the electrodes (2) and which cover the top surfaces of the protrusions (4). The method for manufacturing the semiconductor device includes a step of applying a layer (4a) of the resin to the semiconductor device except for the electrodes (2), a step of patterning the conductive layers (5) on the electrodes (2) and the layer (4a) of the resin in accordance with the protrusions (4), and a step of removing the portions of the layer (4a) of the resin located between the conductive layers (5) by the use of the patterned conductive layers (5) as masks so as to form the protrusions (4).
摘要翻译：半导体器件包括电极（2），由树脂制成并突出于电极（2）的多个突起（4）和与电极（2）电连接的导电层（5）和其覆盖突起（4）的顶表面。制造半导体器件的方法包括将除了电极（2）之外的树脂层（4a）施加到半导体器件的步骤，对电极（2）上的导电层（5）和根据突起（4）的树脂层（4a），以及通过使用图案化的导电层（5）去除位于导电层（5）之间的树脂的层（4a）的部分的步骤）作为掩模，以形成突起（4）。

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