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1. 发明公开

EP1583007A2 Method for evaluating semiconductor device error and system for supporting the same 审中-公开
标题翻译：评估半导体器件错误的方法和用于支持该方法的系统
公开(公告)号：EP1583007A2
公开(公告)日：2005-10-05
申请号：EP05000924.0
申请日：2005-01-18
申请人： Renesas Technology Corp.
发明人： Ibe, Hidefumi Hitachi, Ltd. , Yahagi, Yasuo Hitachi, Ltd. , Kameyama, Hideaki Hitachi, Ltd.
IPC分类号： G06F17/50 , G11C29/00
CPC分类号： G01R31/31816 , G01R31/002 , G01R31/2849 , G01R31/2881 , G01R31/30
摘要： When resistivity against errors caused by cosmic ray neutrons in a semiconductor device is evaluated, the storage (120) in the evaluation apparatus stores multiple spectrum data of white neutrons having different spectrum shapes, and multiple SEE counts obtained by the white neutron method using this multiple spectrum data. A computing section (100) performs processing, with respect to each spectrum data, to read out the spectrum data from the storage, divide the data into multiple energy groups, calculates and stores a total flux of each energy group. Furthermore, the computing section reads out from the storage, the SEE counts with respect to each of the multiple spectrum data and the total flux of each energy group, substitutes the SEE counts and the total flux into a simultaneous equation, where a product of matrix elements indicating the total flux of each of the energy groups as to each of the multiple spectrum data and vectors indicating the SEE cross section of each of the energy groups represents the SEE count as to each of the multiple spectrum data, and calculates the SEE cross section for each of the energy groups. Subsequently, the computing section performs a calculation so that parameters are calculated, which determine a formula of the approximate function of the SEE cross section as a function of energy, so that computed values of error counts obtained by integration of multiple spectra and the approximate function sufficiently match the actual measured values thereof. With the processing as described above, there has been achieved an error evaluation in the semiconductor device using white neutrons independent from an accelerator.
摘要翻译：当评估半导体器件中由宇宙射线中子引起的误差的电阻率时，评估设备中的存储器（120）存储具有不同光谱形状的白色中子的多个光谱数据，并且使用该倍数通过白色中子法获得多个SEE计数频谱数据。计算部（100）针对每个谱数据执行处理以从存储器读出谱数据，将数据划分为多个能量组，计算并存储每个能量组的总通量。此外，计算部分从存储器中读出关于多个光谱数据中的每一个和每个能量组的总通量的SEE计数，将SEE计数和总通量代入联立方程，其中矩阵指示关于多个谱数据中的每一个的每个能量组的总通量的元素以及指示每个能量组的SEE截面的向量表示针对多个谱数据中的每一个的SEE计数，并且计算SEE交叉部分为每个能源组。随后，计算部分执行计算，从而计算参数，其确定作为能量的函数的SEE截面的近似函数的公式，使得通过多个谱的积分获得的误差计数的计算值和近似函数充分匹配其实际测量值。通过如上所述的处理，已经在使用独立于加速器的白色中子的半导体器件中实现了误差评估。

2. 发明公开

EP1583007A3 Method for evaluating semiconductor device error and system for supporting the same 审中-公开
标题翻译：一种用于在半导体装置的评价缺陷和对应的装置的方法
公开(公告)号：EP1583007A3
公开(公告)日：2005-10-26
申请号：EP05000924.0
申请日：2005-01-18
申请人： Renesas Technology Corp.
发明人： Ibe, Hidefumi Hitachi, Ltd. , Yahagi, Yasuo Hitachi, Ltd. , Kameyama, Hideaki Hitachi, Ltd.
IPC分类号： G06F17/50 , G11C11/412 , G06F17/18 , G01R31/30
CPC分类号： G01R31/31816 , G01R31/002 , G01R31/2849 , G01R31/2881 , G01R31/30
摘要： When resistivity against errors caused by cosmic ray neutrons in a semiconductor device is evaluated, the storage (120) in the evaluation apparatus stores multiple spectrum data of white neutrons having different spectrum shapes, and multiple SEE counts obtained by the white neutron method using this multiple spectrum data. A computing section (100) performs processing, with respect to each spectrum data, to read out the spectrum data from the storage, divide the data into multiple energy groups, calculates and stores a total flux of each energy group. Furthermore, the computing section reads out from the storage, the SEE counts with respect to each of the multiple spectrum data and the total flux of each energy group, substitutes the SEE counts and the total flux into a simultaneous equation, where a product of matrix elements indicating the total flux of each of the energy groups as to each of the multiple spectrum data and vectors indicating the SEE cross section of each of the energy groups represents the SEE count as to each of the multiple spectrum data, and calculates the SEE cross section for each of the energy groups. Subsequently, the computing section performs a calculation so that parameters are calculated, which determine a formula of the approximate function of the SEE cross section as a function of energy, so that computed values of error counts obtained by integration of multiple spectra and the approximate function sufficiently match the actual measured values thereof. With the processing as described above, there has been achieved an error evaluation in the semiconductor device using white neutrons independent from an accelerator.
摘要翻译：当针对通过在半导体器件中的宇宙射线的中子引起的错误的电阻率进行评价，在评价装置中的存储装置（120）存储具有不同的频谱形状通过使用该多个白色中子方法得到的白色中子的多个频谱数据和多个SEE计数光谱数据。一种计算部（100）执行处理，对于每个光谱数据，从存储读出的谱数据，将数据划分为多个能量组，计算和存储各能量组的总通量。进一步，运算部从存储中读出时，SEE相对于每个所述多个谱数据和每个能量组的总通量的计数，代入SEE计数和总光通量成的联立方程，矩阵的其中一个产品关于每个所述多个谱数据和向量元素指示每个能量组的总通量指示每个能量组的SEE截面darstellt的SEE数作为给每个所述多个谱数据，并且计算SEE横部针对每个能量组。接着，运算部进行运算所以没有参数被计算，其中确定性矿作为能量的函数的SEE截面的近似函数的公式，所以并计算由多个光谱的积分和近似函数而获得的错误计数的值充分匹配其实际测量值。通过如上所述的处理，存在一种使用白色中子从独立于加速器已经达到在误差评价的半导体装置。

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