专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP1713117A4 SILICON CARBIDE SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译： SILIZIUMCARBIDHALBLEITERBUELEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP1713117A4
公开(公告)日：2009-07-22
申请号：EP05709466
申请日：2005-01-28
申请人： PANASONIC CORP
发明人： TAKAHASHI KUNIMASA , KITABATAKE MAKOTO , YAMASHITA KENYA , UCHIDA MASAO , KUSUMOTO OSAMU , MIYANAGA RYOKO
IPC分类号： H01L21/265 , H01L21/04 , H01L21/28 , H01L21/338 , H01L29/78 , H01L29/812
CPC分类号： H01L21/046
摘要： A process for producing a semiconductor device, comprising the steps of injecting ions into silicon carbide thin-film (2) provided on silicon carbide substrate (1); heating the resultant silicon carbide substrate in vacuum atmosphere to thereby form carbon layer (5) on a surface of the resultant silicon carbide substrate; and subjecting the resultant silicon carbide substrate to activation annealing in an atmosphere of temperature higher and under a pressure higher than in the step of carbon layer (5) formation.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：将离子注入设置在碳化硅衬底（1）上的碳化硅薄膜（2）中; 在真空气氛中加热所得到的碳化硅衬底，从而在所得到的碳化硅衬底的表面上形成碳层（5）并且在比形成碳层（5）的步骤更高的压力和高于该温度的气氛中对得到的碳化硅衬底进行激活退火。

2. 发明公开

EP1513195A4 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 审中-公开
标题翻译： HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG
公开(公告)号：EP1513195A4
公开(公告)日：2009-06-24
申请号：EP03736213
申请日：2003-06-13
申请人： PANASONIC CORP
发明人： KITABATAKE MAKOTO , KUSUMOTO OSAMU , UCHIDA MASAO , TAKAHASHI KUNIMASA , YAMASHITA KENYA
IPC分类号： H01L23/495 , H01L25/07 , H01L29/06 , H01L29/24 , H01L29/78 , H01L25/18
CPC分类号： H01L23/49562 , H01L23/49575 , H01L23/62 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/0653 , H01L29/1608 , H01L29/7806 , H01L29/7828 , H01L29/7838 , H01L2224/0603 , H01L2224/371 , H01L2224/40137 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2224/4903 , H01L2224/49113 , H01L2224/84205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/09701 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/181 , H01L2924/2076 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor module comprises segments (semiconductor devices) (1) capable of individually operating and provided on an SiC substrate. Each segment (1) comprises a source electrode pad (2) and a gate electrode pad (3) formed on a major surface of the SiC substrate (1) and a drain electrode pad formed on the back of the SiC substrate (1). The semiconductor module also comprises element isolation regions such as trenches and Schottky diodes for electrically isolating adjacent segments (1) from one another. The electrode pads (2, 3) of only the segments (1) which are confirmed acceptable by test are connected to electrode terminals (41, 43).
摘要翻译：半导体模块包括能够单独操作并设置在SiC衬底上的段（半导体器件）（1）。每个段（1）包括形成在SiC衬底（1）的主表面上的源电极焊盘（2）和栅电极焊盘（3）以及形成在SiC衬底（1）的背面上的漏电极焊盘。半导体模块还包括诸如沟槽和肖特基二极管的元件隔离区域，用于将相邻的段（1）彼此电隔离。仅通过测试证实可接受的部分（1）的电极垫（2,3）连接到电极端子（41,43）。

3. 发明公开

EP2610914A4 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体元件和半导体器件
公开(公告)号：EP2610914A4
公开(公告)日：2013-08-28
申请号：EP11835848
申请日：2011-10-27
申请人： PANASONIC CORP
发明人： UCHIDA MASAO
IPC分类号： H01L29/78 , H01L29/06 , H01L29/12
CPC分类号： H01L21/26506 , H01L21/046 , H01L29/1608 , H01L29/66068 , H01L29/7828
摘要： A semiconductor element according to the present invention includes: a semiconductor substrate of a first conductivity type; a first silicon carbide semiconductor layer of the first conductivity type on the semiconductor substrate; a body region of a second conductivity type defined in the first silicon carbide semiconductor layer; an impurity region of the first conductivity type defined in the body region; a second silicon carbide semiconductor layer of the first conductivity type on the first silicon carbide semiconductor layer; a gate insulating film on the second silicon carbide semiconductor layer; a gate electrode on the gate insulating film; a first ohmic electrode connected to the impurity region ; and a second ohmic electrode on the back surface of the semiconductor substrate. The body region includes first and second body regions. The average impurity concentration of the first body region is twice or more as high as that of the second body region. And the bottom of the impurity region is deeper than that of the first body region.

4. 发明公开

EP1909326A4 SEMICONDUCTOR ELEMENT AND ELECTRIC DEVICE 审中-公开
标题翻译：半导体元件和机电设备
公开(公告)号：EP1909326A4
公开(公告)日：2009-05-06
申请号：EP06781438
申请日：2006-07-21
申请人： PANASONIC CORP
发明人： KITABATAKE MAKOTO , KUSUMOTO OSAMU , UCHIDA MASAO , YAMASHITA KENYA
IPC分类号： H01L29/78 , H01L21/04 , H01L23/485 , H01L29/06 , H01L29/16 , H01L29/20 , H01L29/24 , H01L29/47
CPC分类号： H01L29/7806 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0629 , H01L29/0619 , H01L29/0696 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/66068 , H01L29/7811 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/05666 , H01L2224/0568 , H01L2224/0603 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/4813 , H01L2224/48247 , H01L2224/48472 , H01L2224/48624 , H01L2224/48666 , H01L2224/4868 , H01L2224/48724 , H01L2224/48766 , H01L2224/4878 , H01L2224/4903 , H01L2224/49051 , H01L2224/4911 , H01L2224/49175 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01042 , H01L2924/01079 , H01L2924/01082 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor element (20) is provided with a field effect transistor (90), a Schottky electrode (9a), and a plurality of bonding pads (12S, 12G). At least one of the bonding pads (12S, 12G) is arranged above the Schottky electrode (9a).

5. 发明公开

EP1909325A4 SEMICONDUCTOR ELEMENT AND ELECTRIC DEVICE 审中-公开
标题翻译： HALBLEITERELEMENT UND ELEKTRISCHE EINRICHUNG
公开(公告)号：EP1909325A4
公开(公告)日：2009-05-06
申请号：EP06781411
申请日：2006-07-21
申请人： PANASONIC CORP
发明人： KITABATAKE MAKOTO , KUSUMOTO OSAMU , UCHIDA MASAO , YAMASHITA KENYA
IPC分类号： H01L29/78 , H01L21/04 , H01L29/06 , H01L29/16 , H01L29/20 , H01L29/24 , H01L29/47
CPC分类号： H01L29/7806 , H01L23/62 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0629 , H01L29/0619 , H01L29/0696 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/66068 , H01L29/7811 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/0568 , H01L2224/0603 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/4813 , H01L2224/48247 , H01L2224/48472 , H01L2224/48624 , H01L2224/48644 , H01L2224/48655 , H01L2224/48666 , H01L2224/4868 , H01L2224/48724 , H01L2224/48755 , H01L2224/48766 , H01L2224/4878 , H01L2224/4903 , H01L2224/49051 , H01L2224/4911 , H01L2224/49175 , H01L2224/85399 , H01L2224/85424 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01042 , H01L2924/01079 , H01L2924/01082 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/00 , H01L2224/48744
摘要： A semiconductor element (20) of the present invention includes a plurality of field effect transistors (90) and a schottky electrode (9a), and the schottky electrode (9a) is formed along an outer periphery of a region where the plurality of field effect transistors (90) are formed.
摘要翻译：半导体元件（20）具有多个场效应晶体管（90）和肖特基电极（9a）。肖特基电极（9a）沿着形成有场效应晶体管（90）的区域的外周配置。

6. 发明公开

EP1427021A4 SEMICONDUCTOR DEVICE 有权
标题翻译： HALBLEITERBAUELEMENT
公开(公告)号：EP1427021A4
公开(公告)日：2008-12-03
申请号：EP02765568
申请日：2002-09-17
申请人： PANASONIC CORP
发明人： YAMASHITA KENYA , KITABATAKE MAKOTO , KUSUMOTO OSAMU , TAKAHASHI KUNIMASA , UCHIDA MASAO , MIYANAGA RYOKO
IPC分类号： H01L29/78 , H01L21/04 , H01L21/18 , H01L29/10 , H01L29/24 , H01L29/36 , H01L29/772
CPC分类号： H01L29/66068 , H01L29/105 , H01L29/1608 , H01L29/365 , H01L29/7725 , H01L29/7828 , H01L29/7838
摘要： A semiconductor device having a storage type SiC-MISFET structure, and comprising a p-type SiC layer (10) formed on an SiC substrate, an n-type channel layer (20), a gate insulation film (11), a gate electrode (12), and n-type source/drain layers (13a, 13b). The channel layer (20) has an undope layer (22) and a δ dope layer (21) provided in the vicinity of the lower end of the undope layer (22). A high-concentration δ dope layer (21) provided in a deep region of the channel layer (20) can weaken an electric field in the surface region of the channel layer to enhance a current drive force.
摘要翻译： 1。一种半导体装置，其具有存储型的SiC-MISFET结构，并且包括在SiC衬底上形成的p型SiC层（10），n型沟道层（20），栅极绝缘膜（11），栅电极（12）和n型源极/漏极层（13a，13b）。沟道层（20）具有未掺杂层（22）和设置在未掺杂层（22）的下端附近的δ掺杂层（21）。设置在沟道层（20）的深部区域中的高浓度δ掺杂层（21）可以削弱沟道层的表面区域中的电场以增强电流驱动力。

7. 发明公开

EP2725622A4 SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：碳化硅绝缘栅型半导体元件及其制造方法
公开(公告)号：EP2725622A4
公开(公告)日：2014-12-24
申请号：EP12804737
申请日：2012-06-25
申请人： PANASONIC CORP
发明人： TAKAHASHI KUNIMASA , NIWAYAMA MASAHIKO , UCHIDA MASAO , KUDOU CHIAKI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/10 , H01L29/12
CPC分类号： H01L29/1608 , H01L29/045 , H01L29/1033 , H01L29/1041 , H01L29/4236 , H01L29/42368 , H01L29/66068 , H01L29/66666 , H01L29/7813 , H01L29/7827 , H01L29/7828
摘要： This silicon carbide semiconductor element includes: a body region of a second conductivity type which is located on a drift layer of a first conductivity type; an impurity region of the first conductivity type which is located on the body region; a trench which runs through the body region and the impurity region to reach the drift layer; a gate insulating film which is arranged on surfaces of the trench; and a gate electrode which is arranged on the gate insulating film. The surfaces of the trench include a first side surface and a second side surface which is opposed to the first side surface. The concentration of a dopant of the second conductivity type is higher at least locally in a portion of the body region which is located beside the first side surface than in another portion of the body region which is located beside the second side surface.

8. 发明公开

EP2482315A4 SEMICONDUCTOR ELEMENT 有权
公开(公告)号：EP2482315A4
公开(公告)日：2013-08-28
申请号：EP11833583
申请日：2011-10-14
申请人： PANASONIC CORP
发明人： KITABATAKE MAKOTO , UCHIDA MASAO
IPC分类号： H01L29/78 , H01L29/06 , H01L29/12
CPC分类号： H01L29/7828 , H01L29/0696 , H01L29/1608 , H01L29/2003 , H01L29/7391

9. 发明公开

EP2620983A4 SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 有权
标题翻译： HALBLEITERELEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2620983A4
公开(公告)日：2013-08-28
申请号：EP11835849
申请日：2011-10-27
申请人： PANASONIC CORP
发明人： UCHIDA MASAO , TANAKA KOUTAROU
IPC分类号： H01L29/78 , H01L21/336 , H01L29/06 , H01L29/12
CPC分类号： H01L21/26506 , H01L21/046 , H01L29/1608 , H01L29/66068 , H01L29/7828
摘要： A semiconductor element according to the present invention includes: a semiconductor substrate of a first conductivity type; a first silicon carbide semiconductor layer of the first conductivity type on the semiconductor substrate; a body region of a second conductivity type defined in the first silicon carbide semiconductor layer; an impurity region of the first conductivity type defined in the body region; a second silicon carbide semiconductor layer of the first conductivity type on the first silicon carbide semiconductor layer; a gate insulating film on the second silicon carbide semiconductor layer; a gate electrode on the gate insulating film; a first ohmic electrode connected to the impurity region ; and a second ohmic electrode on the back surface of the semiconductor substrate. The body region includes first and second body regions. The average impurity concentration of the first body region is twice or more as high as that of the second body region. And the bottom of the impurity region is deeper than that of the first body region.
摘要翻译：根据本发明的半导体元件包括：第一导电类型的半导体衬底; 在半导体衬底上的第一导电类型的第一碳化硅半导体层; 在第一碳化硅半导体层中限定的第二导电类型的体区; 在主体区域中限定的第一导电类型的杂质区域; 在第一碳化硅半导体层上的第一导电类型的第二碳化硅半导体层; 在第二碳化硅半导体层上的栅极绝缘膜; 栅绝缘膜上的栅电极; 连接到杂质区的第一欧姆电极; 以及在半导体衬底的背面上的第二欧姆电极。身体区域包括第一和第二身体区域。第一体区的平均杂质浓度是第二体区的平均杂质浓度的两倍或更多。杂质区域的底部比第一体区域的底部深。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式